JP2010532070A - 封止技術と密閉封止されたデバイス - Google Patents
封止技術と密閉封止されたデバイス Download PDFInfo
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- 238000007789 sealing Methods 0.000 title abstract description 29
- 238000005516 engineering process Methods 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 48
- 238000000151 deposition Methods 0.000 claims abstract description 39
- 229910052809 inorganic oxide Inorganic materials 0.000 claims abstract description 27
- 239000003566 sealing material Substances 0.000 claims abstract description 23
- 238000001816 cooling Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 239000011147 inorganic material Substances 0.000 claims abstract description 12
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 10
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 96
- 239000000758 substrate Substances 0.000 claims description 33
- 230000008021 deposition Effects 0.000 claims description 25
- 239000008393 encapsulating agent Substances 0.000 claims description 24
- LOHGMFIFYJNTQJ-UHFFFAOYSA-H tin(4+);trifluoride;phosphate Chemical compound [F-].[F-].[F-].[Sn+4].[Sn+4].[Sn+4].[O-]P([O-])([O-])=O LOHGMFIFYJNTQJ-UHFFFAOYSA-H 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 8
- 229910019142 PO4 Inorganic materials 0.000 claims description 7
- 235000013305 food Nutrition 0.000 claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 7
- 239000010452 phosphate Substances 0.000 claims description 7
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000035699 permeability Effects 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 claims description 2
- 150000004770 chalcogenides Chemical class 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 230000005693 optoelectronics Effects 0.000 claims 1
- GCFDVEHYSAUQGL-UHFFFAOYSA-J fluoro-dioxido-oxo-$l^{5}-phosphane;tin(4+) Chemical compound [Sn+4].[O-]P([O-])(F)=O.[O-]P([O-])(F)=O GCFDVEHYSAUQGL-UHFFFAOYSA-J 0.000 abstract description 11
- 239000005303 fluorophosphate glass Substances 0.000 abstract description 10
- 239000011521 glass Substances 0.000 abstract description 9
- 239000005365 phosphate glass Substances 0.000 abstract description 4
- 239000005385 borate glass Substances 0.000 abstract description 3
- 239000005387 chalcogenide glass Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 25
- 239000010408 film Substances 0.000 description 13
- 239000011575 calcium Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 8
- 229910052791 calcium Inorganic materials 0.000 description 8
- 238000006731 degradation reaction Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- ANOBYBYXJXCGBS-UHFFFAOYSA-L stannous fluoride Chemical compound F[Sn]F ANOBYBYXJXCGBS-UHFFFAOYSA-L 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- FPHIOHCCQGUGKU-UHFFFAOYSA-L difluorolead Chemical compound F[Pb]F FPHIOHCCQGUGKU-UHFFFAOYSA-L 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RSEBUVRVKCANEP-UHFFFAOYSA-N 2-pyrroline Chemical compound C1CC=CN1 RSEBUVRVKCANEP-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910008449 SnF 2 Inorganic materials 0.000 description 1
- 229910005728 SnZn Inorganic materials 0.000 description 1
- 241000532412 Vitex Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 235000009347 chasteberry Nutrition 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- ZVJHJDDKYZXRJI-UHFFFAOYSA-N pyrroline Natural products C1CC=NC1 ZVJHJDDKYZXRJI-UHFFFAOYSA-N 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- BPRHUIZQVSMCRT-VEUZHWNKSA-N rosuvastatin Chemical compound CC(C)C1=NC(N(C)S(C)(=O)=O)=NC(C=2C=CC(F)=CC=2)=C1\C=C\[C@@H](O)C[C@@H](O)CC(O)=O BPRHUIZQVSMCRT-VEUZHWNKSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3615—Coatings of the type glass/metal/other inorganic layers, at least one layer being non-metallic
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
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- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3671—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use as electrodes
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
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- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/23—Silica-free oxide glass compositions containing halogen and at least one oxide, e.g. oxide of boron
- C03C3/247—Silica-free oxide glass compositions containing halogen and at least one oxide, e.g. oxide of boron containing fluorine and phosphorus
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
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- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H10K50/844—Encapsulations
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/549—Organic PV cells
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Abstract
Description
・Burrows, P. E., Bulovic., V., Forrest, S. R., Sapochak, L. S., McCarty, D. M., Thompson, M. E. "Reliability and Degradation of Organic Light Emitting Devices", Applied Physics Letters, 65(23), pp. 2922 - 2924.
・Kolosov, D., et al., Direct observation of structural changes in organic light emitting devices during degradation.Journal of Applied Physics, 1001.90(7).
・Liew, F.Y., et al., Investigation of the sites of dark spots in organic light-emitting devices. Applied Physics Letters, 1000.77(17).
・Chatham, H., "Review:Oxygen Diffusion Barrier Properties of Transparent Oxide Coatings on Polymeric Substrates", 78, pp. 1 - 9, (1996).
・有機発光ダイオード(OLED)
・有機光起電力デバイス(OPV)
・触媒を有し若しくは有さない有機センサ
・フレキシブル平面パネルデバイスのフレキシブル基板
・「無線周波認識タグRFID)
・発光ダイオード(LED)
・光起電力デバイス(PV)
・触媒を有し若しくは有さないセンサ
・フレキシブル平面パネルデバイスのフレキシブル基板
・無線周波認識タグ(RFID)
・フレキシブル平面パネルデバイスのフレキシブル基板
・食品パッケージ
・医療用のパッケージ
例えば、SnOは可視波長で不透明であるが、リン酸塩等の成分によりドープして、透明膜にし得る。
P2O5、BPO4、PbF2等のドーパントは、封止材料102の屈折率を変化させるのに使用されて、例えばデバイス100の光の伝導及び/又は光の抽出の最適化に役立つ。例えば、最高発光を有するOLEDデバイス100は、その内部にある空気のギャップを屈折率が一致した酸化物質と入れ替えると、最適化され得る。
異なる形態の層剥離を最小化するのに役立ち得る封止材料102のCTEを変えるために、SnF2,P2O5,PbF2等のドーパントが使用され得る。その異なる形態の層剥離は、一般的に「CTE格子不整合」問題と関連づけられる。
デバイス最適化の役に立つ所望の電気‐光学特性を与えるために蛍光体、量子ドット、無機的/有機染料、及び分子が添加され得る。例えば、カーボンブラック等のドーパントが、封止材料102の電気‐光学特性(フェルミレベル/抵抗率)を変えるのに使用されて、密閉封止デバイス100の効率が改善され得る(注意:フェルミ準位が実質的にシフトされ得る場合、これにより、周知のインジウム−すず−酸化物(ITO)システムに類似した方法により、バリアフィルムの伝導率を変えることができる)。
SnF2等のドーパントによって封止材料102をドーピングすることにより、堆積されたバリアフィルムの混和性を変えることができる。所望に応じて、封止材料102の表面湿潤能力を変えることによって、この概念を付着目的のためにさらに利用できる。
多種のデバイス100に望ましいであろう封止材料102の硬度を高めるために、SnO、SnF2,PbF2等のドーパントが使用され得る。
スパッタ堆積又は他の薄膜堆積方法によって、シャドウマスク等の異なるパターン描画技術が使用されて、デバイス100の動作を最適化するのに役立つ特定の誘電特性を有する微細構造が得られる(例えば、有機薄膜トランジスタ(TFT)デバイス100は、その上に形成された絶縁体ゲートを有し、良好な電圧閾値が達成され得る。)。
Claims (25)
- デバイスを密封封止するのに要する時間を低減する方法であって、
未封止のデバイスを冷却するステップと、
当該冷却されたデバイスの少なくとも一部に封止材料を蒸着して、封止されたデバイスを形成するステップと、
前記封止されたデバイスに熱処理を施して、密閉封止されたデバイスを形成するステップと、を含み、
前記封止材料は低液相線温度無機物質又はSn2+含有無機酸化物質である。 - 前記低液相線温度無機物質は、
スズ‐ふっ化リン酸塩物質、
タングステンドープされたスズ‐ふっ化リン酸塩物質、
カルコゲナイド物質、
テルライト物質、
ホウ酸塩物質、及び
リン酸塩物質のうちの1つであり又はこれらを任意に組み合わせた混合物質であることを特徴とする請求項1に記載の方法。 - 前記低液相線温度無機物質はスズ‐ふっ化リン酸塩物質であり、当該スズ‐ふっ化リン酸塩物質は、
Sn(20−85wt%)、
P(2−20wt%)、
O(10−36wt%)、
F(10−36wt%)、
Nb(0−5wt%)、及び
Sn+P+O+Fの合計の少なくとも75%とからなる成分を有することを特徴とする請求項1に記載の方法。 - 前記低液相線温度無機物質の液相線温度は≦1000℃であることを特徴とする請求項1に記載の方法。
- 前記低液相線温度無機物質の液相線温度は≦600℃であることを特徴とする請求項1に記載の方法。
- 前記低液相線温度無機物質の液相線温度は≦400℃であることを特徴とする請求項1に記載の方法。
- 前記Sn2+含有無機酸化物質は、
SnO、
SnO及びホウ酸塩物質、
SnO及びリン酸塩物質、並びに
SnO及びホウリン酸塩物質のうち1つであり又はこれらを任意に組み合わせた混合物質であることを特徴とする請求項1に記載の方法。 - 前記冷却ステップは、前記未封止デバイスを<15℃の温度まで冷却するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記冷却ステップは、前記未封止デバイスを<10℃の温度まで冷却するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記冷却ステップは、前記未封止デバイスを<1℃の温度まで冷却するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記堆積ステップは、前記封止材料を約5Å/秒の堆積速度で前記冷却されたデバイスの少なくとも一部に堆積するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記堆積ステップは、前記封止材料を約25Å/秒の堆積速度で前記冷却されたデバイスの少なくとも一部に堆積するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記堆積ステップは、前記封止材料を約75Å/秒の堆積速度で前記冷却されたデバイスの少なくとも一部に堆積するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記熱処理ステップは、前記デバイス内の成分にダメージを与えない温度で真空中で又は不活性雰囲気中で実行されることを特徴とする請求項1に記載の方法。
- 前記熱処理ステップは<400℃の温度で実行されることを特徴とする請求項1に記載の方法
- 前記熱処理ステップは<200℃の温度で実行されることを特徴とする請求項1に記載の方法
- 前記加熱処理ステップは<100℃の温度で実行されることを特徴とする請求項1に記載の方法。
- 前記加熱処理ステップは<40℃の温度で実行されることを特徴とする請求項1に記載の方法。
- 前記密閉封止されたデバイスは1日当たり0.01cc/m2/atm未満の酸素浸透度と1日当たり0.01g/m2未満の水分浸透度を有することを特徴とする請求項1に記載の方法。
- 前記封止材料はドーパントによりドープされて、
不透明度‐透明度、
屈折率、
体積膨張係数、
感度、
フェルミレベル/抵抗率、
溶解牲/界面湿潤性、及び
硬度、のうち1つ又はこれらの任意の組み合わた特性を含む特定の所望の物理‐化学特性を達成していることを特徴とする請求項1に記載の方法。 - 前記デバイスは、
有機発光ダイオード(OLED)、高分子発光ダイオード(PLED)、光電池、メタ物質、薄膜トランジスタ、及び導波路を含む有機電子デバイスと、
発光ダイオード(LED)、光電池、メタ物質、薄膜トランジスタ、及び導波管を含む無機‐電子デバイスと、
光学スイッチ及び導波路を含むオプトエレクトロニクデバイスと、
可撓性基板と、
食品容器と、並びに
医療用容器とのうちから選択された一つであることを特徴とする請求項1に記載の方法。 - 基板プレートと、
少なくとも1つの要素と、
堆積された封止材料と、を含むデバイスであって、
前記少なくとも1つの要素が前記堆積された封止材料と前記基板プレートとの間において密閉して封止されており、
前記封止材料を前記少なくとも1つの要素及び前記基板上に堆積させるステップに先立って、前記基板は<15℃の温度まで冷却されたものであり、
前記堆積物質は低液相線温度無機物質又はSn2+含有無機酸化物質であることを特徴とするデバイス。 - 前記低液相線温度無機物質は、
スズ‐ふっ化リン酸塩物質、
タングステンドープされたスズ‐ふっ化リン酸塩物質、
カルコゲナイド物質、
テルライト物質、
ホウ酸塩物質、及び
リン酸塩物質のうちの1つであり又はこれらの混合物質であることを特徴とする請求項22に記載のデバイス。 - 前記Sn2+含有無機酸化物質は、
SnO、
SnO及びホウ酸塩物質、
SnO及びリン酸塩物質、並びに
SnO及びホウリン酸塩物質のうち1つであり又はこれらの混合物質であることを特徴とする請求項22に記載のデバイス。 - 密閉封止されたデバイスを製造する方法であって、
デバイスを冷却するステップと、
前記デバイスの少なくとも一部に封止材料を堆積させるステップと、
前記デバイスに熱処理を施して、前記密閉封止されたデバイスを形成するステップと、を含み、
前記封止材料は、低液相線温度無機物質又はSn2+含有無機酸化物質であることを特徴とする方法。
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PCT/US2008/007549 WO2008156762A1 (en) | 2007-06-21 | 2008-06-17 | Sealing technique and hermetically sealed device |
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Also Published As
Publication number | Publication date |
---|---|
TW200919656A (en) | 2009-05-01 |
WO2008156762A1 (en) | 2008-12-24 |
KR20100050470A (ko) | 2010-05-13 |
US7722929B2 (en) | 2010-05-25 |
CN101689614A (zh) | 2010-03-31 |
KR101265862B1 (ko) | 2013-05-20 |
US20100193353A1 (en) | 2010-08-05 |
US20070252526A1 (en) | 2007-11-01 |
US8435604B2 (en) | 2013-05-07 |
EP2054956B1 (en) | 2017-08-23 |
EP2975664A1 (en) | 2016-01-20 |
CN101689614B (zh) | 2012-07-11 |
EP2054956A1 (en) | 2009-05-06 |
TWI388039B (zh) | 2013-03-01 |
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