CN101689614A - 密封技术和气密密封的装置 - Google Patents
密封技术和气密密封的装置 Download PDFInfo
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Abstract
本文描述用于减少气密密封装置所需时间的密封方法以及所得气密密封的装置(如气密密封的OLED装置)。该密封方法包括以下步骤:(1)冷却未包封的装置;(2)在该冷却的装置的至少一部分上沉积密封材料以形成包封装置;和(3)热处理该包封的装置以形成气密密封的装置。在一种实施方式中,该密封材料是低液相线温度(LLT)无机材料,例如氟磷酸锡玻璃、钨掺杂的氟磷酸锡玻璃、硫属化物玻璃、亚碲酸盐玻璃、硼酸盐玻璃和磷酸盐玻璃。在另一种实施方式中,该密封材料是含Sn2+无机氧化物材料,例如SnO、SnO+P2O5和SnO+BPO4。
Description
技术领域
本发明涉及用于减少对装置进行气密密封所需时间的密封方法以及所得气密密封的装置。该气密密封的装置的例子包括发光装置(如有机发光二极管(OLED)装置)、光生伏打装置、薄膜传感器、迅衰波导传感器、食品容器和药物容器。
背景
氧和/或水传输通过层叠或包封材料以及它们随后侵袭装置内的内部材料代表了两种最普遍的涉及许多装置的劣化机理,这些装置包括例如发光装置(OLED装置)、薄膜传感器、迅衰波导传感器、食品容器和药物容器。对关于氧和水渗透进入OLED装置的内层(阴极和电致发光材料)中所涉及问题的详细讨论参考以下文献:
Aziz,H.,Popovic,Z.D.,Hu,N.X.,Hor,A.H.和Xu,G.“基于小分子的有机发光装置的劣化机理(Degradation Mechanism of Small Molecule-BasedOrganic Light-Emitting Devices)”,科学(Science),283,第1900-1902页(1999)。
Burrows,P.E.,Bulovic.,V.,Forrest,S.R.,Sapochak,L.S.,McCarty,D.M.,Thompson,M.E.“有机发光装置的可靠性和劣化(Reliability andDegradation of Organic Light Emitting Devices)”,应用物理通讯(Applied PhysicsLetters),65(23),第2922-2924页。
Kolosov,D.等,直接观察有机发光装置在劣化期间的结构变化(Directobservation of structural changes in organic light emitting devices duringdegradation),应用物理期刊(Journal of Applied Physics),1001.90(7)。
Liew,F.Y.等,有机发光装置中黑点位置研究(Investigation of the sites ofdark spots in organic light-emitting devices),应用物理通讯(Applied PhysicsLetters),1000.77(17)。
Chatham,H.,“综述:聚合物基板上透明氧化物涂层的氧扩散阻挡性质(Review:Oxygen Diffusion Barrier Properties of Transparent Oxide Coatings onPolymeric Substrates)”,78,第1-9页(1996)。
众所周知,除非采取一些措施使氧和水渗透进OLED装置的趋势最小化,否则,OLED装置的运行寿命将受到严重限制。结果是,人们已经进行了很多努力来使氧和水渗透进OLED装置的趋势最小化,从而促使OLED达到40千小时的运行寿命,以下文献中讨论了人们认为OLED装置取代LCD显示器之类陈旧装置技术所需要的水平:
Forsythe,Eric,W.,基于有机物的发光装置运行(Operation of Organic-BasedLight-Emitting Devices),信息装置协会(SID)第40届年会演讲集(Society forInformation Device(SID)40th anniversary Seminar Lceture Notes),第1卷,研讨会M5,Hynes会议中心,波士顿,美国马萨诸塞州,5月20和24日,(1002)。
目前为止进行的为了有助于延长OLED装置寿命的最著名的努力包括抽气、包封和使用各种密封技术。事实上,目前的一种密封OLED装置的普遍方式是施用并热处理(或UV处理)不同种类的环氧化物、无机材料和/或有机材料,从而在OLED装置上形成密封物。例如,Vitex Systems制造和销售一种BarixTM品牌的涂层,这是一种基于复合物的途径,其中交替使用无机材料和有机材料的层来密封OLED装置。虽然这些种类的密封物提供一定水平的气密效果,但是它们可能非常昂贵而且仍然存在它们随时间失效无法防止氧和水扩散进入OLED装置的许多情况。
要解决这个密封问题,本发明的受让人开发了一些不同的密封技术,其中使用密封材料(如低液相线温度无机材料,含Sn2+无机氧化物材料)来气密密封OLED装置(或其他类型的装置)(参见上述美国专利申请序列第11/207691和11/803512号)。虽然这些密封技术和密封材料能良好地气密密封OLED装置(或其他类型的装置),但是仍然需要改进这些密封技术,从而能够缩短气密密封OLED装置(或其他类型的装置)所需的时间。本发明能够满足这个具体需求和其他需求。
发明概述
本发明介绍了一种用于减少对装置(如OLED装置)进行气密密封所需时间的密封方法。该密封方法包括以下步骤:(1)冷却未包封装置;(2)在该冷却的装置的至少一部分上沉积密封材料以形成包封的装置;和(3)热处理该包封的装置以形成气密密封的装置。在一种实施方式中,该密封材料是低液相线温度(LLT)无机材料,如氟磷酸锡玻璃、钨掺杂的氟磷酸锡玻璃、硫属化物玻璃、亚碲酸盐玻璃、硼酸盐玻璃和磷酸盐玻璃。在另一种实施方式中,该密封材料是含Sn2+无机氧化物材料,如SnO、SnO+P2O5和SnO+BPO4。使用这种密封方法的一个优点是,通过冷却未包封的装置,可增大该密封材料(如LLT材料、含Sn2+无机氧化物材料)沉积在该未包封的装置上的沉积速率,这会减少对装置(如OLED装置)进行气密密封所需的时间。
附图简要说明
通过参考以下详细说明并结合附图,可以更完整地理解本发明,其中:
图1是根据本发明的气密密封的装置的截面侧视图;
图2是说明根据本发明的用于减少气密密封装置所需时间的密封方法各步骤的流程图;
图3是85℃/85%加速老化室/烘箱的框图,该室/烘箱用于测试按照类似方式制备的三种装置的气密性,三种类似方式的区别在于,它们在沉积密封材料期间各自具有不同的基板温度;和
图4是说明三种被测装置的性能的图,这些装置以类似方式制备,其区别在于,它们在沉积密封材料期间各自具有不同的基板温度。
详细说明
参考图1-2,分别说明根据本发明的气密密封的装置100的截面侧视图和用于制造气密密封的装置100的密封方法200的流程图。如图1中所示,气密密封的装置100包括热处理材料102(例如热处理的低液相线温度无机材料102或热处理的含Sn2+无机氧化物材料102),该材料包封并气密密封位于支承物/基板106上的一个或多个内层/部件104。
密封方法200包括冷却步骤202,其中将未包封装置100的基板106和可能的内层/部件104冷却至(例如)以下的温度:优选<15℃,较优选<10℃,甚至更优选<1℃。另外,该密封方法200包括沉积步骤204,其中将密封材料102(例如LLT材料102或含Sn2+无机氧化物材料102)沉积在位于冷却的支承物/基板106顶上的内层/部件104上以形成包封的装置100。在一种实施方式中,该密封材料102可以(例如)以下沉积速率沉积在冷却的内层/部件104和冷却的支承物/基板106上:优选约5埃/秒,较优选约25埃/秒,甚至更优选约75埃/秒。而且,可使用包括以下的各种方法中的任何一种沉积该密封材料102,例如溅射、闪蒸、喷射、倾倒、玻璃料沉积、气相沉积、浸涂、涂刷、辊涂(例如使用密封材料102的膜)、旋涂、共蒸发法、粉尘枪喷射法、反应性溅射法、激光烧蚀法、或它们的任意组合。
另外,密封方法200包括热处理步骤206,其中对包封的装置100进行退火、固结或热处理(例如,在低于100℃的温度下处理小于3小时)以形成气密密封的装置100。进行该热处理步骤206以去除/尽可能减少沉积的密封材料102内的缺陷(例如孔),这些缺陷可能在沉积步骤204期间形成(注意:如果使用含Sn2+无机氧化物材料102、尤其是SnO,则溅射沉积步骤204本身可以提供烧结沉积材料102所需的全部热量)。在一种实施方式中,包封的装置100可在(例如)以下的温度热处理:优选<400℃,较优选<200℃,甚至更优选<100℃,最优选<40。需要时,冷却步骤202、沉积步骤204和热处理步骤206可都在惰性气氛或真空中进行,以有助于确保在整个密封过程中保持无水无氧条件。这种加工环境有助于确保(例如)位于气密密封的装置100内的有机电子器件104的可靠长寿命运行。
密封方法200的一个主要优点是,通过冷却未包封的装置100,可以增大将密封材料102沉积在未包封的装置100上的沉积速率,这将减少对装置100进行气密密封所需的时间。在要求高容量运行和制造大量气密密封的装置100时,这是很重要的。气密密封的装置100的例子包括发光装置(如OLED装置)、光生伏打装置、薄膜传感器、迅衰波导传感器、食品容器和药物容器。
如果要制造OLED装置100,则内层104将包括阴极和电致发光材料,它们都位于基板106上。如果将这些阴极和电致发光材料104加热至超过例如100-125℃,则它们可能受到破坏。因此,如果在OLED装置100上沉积常规材料(例如钠钙玻璃),则在这种具体应用中不能进行热处理步骤206。因为,去除常规材料(例如钠钙玻璃)中的缺陷所需的温度(例如600℃)太高,会严重损坏OLED装置的内层104。但是,在本发明中,可以在这种具体应用中进行热处理步骤206,因为去除/尽可能减少沉积的密封材料102中可能存在的缺陷所需的温度(例如等于或低于100℃)较低,因此不会损坏OLED装置的内层104。要实现这个目的,用于包封冷却的装置100的密封材料102优选为低液相线温度(LLT)无机材料102或含Sn2+无机氧化物材料102。以下简单讨论这些密封材料,但是更详细的讨论参考共同待审查的美国专利申请序列第11/207691和11/803512号。
LLT材料102可实现所有这些目的,因为这种材料具有低于或等于1000℃的较低液相线温度。低液相线温度表示可以用不会对OLED装置100的内层104产生热损坏但是仍然能在该OLED装置上形成无孔膜的较低温度对LLT 102进行热处理。同样,应当理解,也可将热处理的LLT材料102用作OLED装置100以外多种装置100上的阻挡层,这些装置是例如薄膜传感器、光生伏打装置、迅衰波导传感器、食品容器、药物容器或对湿气、氧或其他气体敏感的任意种类电子装置(注意:本文还可使用称为“钨掺杂的氟磷酸锡玻璃”的另一种LLT材料102,共同转让的美国专利申请序列第11/544262号中揭示了这种材料——该文献的内容通过参考结合于此)。
在一种实施方式中,LLT材料102具有低于或等于1000℃的低液相线温度(较优选≤600℃,甚至更优选≤400℃)。该LLT材料102可包括例如玻璃,如氟磷酸锡玻璃、钨掺杂的氟磷酸锡玻璃、硫属化物玻璃、亚碲酸盐玻璃、硼酸盐玻璃和磷酸盐玻璃(如碱金属与Zn或SnZn的焦磷酸盐)。例如,优选的氟磷酸锡玻璃具有以下组成:Sn(20-85重量%),P(2-20重量%),O(10-36重量%),F(10-36重量%),Nb(0-5重量%)且Sn+P+O+F总计至少为75%(可以是熔融的粉末靶或溅射压制的粉末靶)。出于包括(例如)以下一些不同原因,这些LLT材料102是有利的:
LLT材料102可不含重金属和其他对环境不利的材料。
LLT材料102可以是耐久性的,并在浸没于85℃的水中时表现出低溶解速率(小于20ppm/天)。
LLT材料102可包含染料分子,并且可掺杂至高达8mM的水平(4.8×1018厘米-3)。
LLT磷酸盐玻璃具有比熔凝石英小4-5个量级左右的氦渗透系数。
另外,含Sn2+无机氧化物材料102可实现所有这些目的,因为这种材料在较低温度下固结时能形成保护装置100的气密包封涂层。该含Sn2+无机氧化物材料102在一些方面不同于作为上述LLT材料之一的氟磷酸锡材料。首先,该含Sn2+无机氧化物材料102可在低于氟磷酸锡材料的温度下热处理(注意:以下参考图3-4具体讨论的氟磷酸锡材料可在约120℃热处理)。其次,该含Sn2+无机氧化物材料102不含氟。第三,一些含Sn2+无机氧化物材料102(如SnO)的熔点超过1000℃,高于氟磷酸锡材料的最高熔点(1000℃)。第四,含Sn2+无机氧化物材料102具有不同于氟磷酸锡材料的组成。
含Sn2+无机氧化物材料102包括以下组成,例如SnO粉末、含掺混的SnO/P2O5的粉末(例如80%SnO+20%P2O5)、以及掺混的SnO/BPO4粉末(例如90%SnO+10%BPO4)。但是,含Sn2+无机氧化物材料102还可包括已经熔融形成合适溅射靶的掺杂的组合物(例如80%SnO+20%P2O5)。在一种实施方式中,含Sn2+无机氧化物材料102包括:(1)SnO;(2)SnO和硼酸盐材料;(3)SnO和磷酸盐材料;和(4)SnO和硼磷酸盐材料。通常,含Sn2+无机氧化物材料102可包含大于50%的氧化亚锡(较优选大于70%的氧化亚锡,甚至更优选大于80%的氧化亚锡)。而且,含Sn2+无机氧化物材料102可以在低于400℃的温度热处理(优选低于200℃,较优选低于100℃,甚至更优选低于40℃)。
参考图3,图中显示用于测试三种装置100的气密性(钙片)的85℃/85%加速老化室/烘箱300的图,这三种装置使用相同的氟磷酸锡材料102在相同的沉积条件下生产,区别在于它们各自的基板106冷却至不同温度。如图所示,各测试装置100具有沉积的氟磷酸锡材料102,两个内层104(Al和Ca),基板106(玻璃基板106)。具体地说,各测试装置100通过在玻璃基板106(康宁公司编号1737)顶上蒸发100纳米Ca膜104而制造。然后在该Ca膜104上蒸发形成150纳米Al层104。使用该Al层104模拟通常用于生产室内聚合物发光二极管(PLED)的阴极。使用“双舟(dual-boat)”专用Cressington蒸发器308R(TedPella,CA),在沉积Ca和Al层104期间使玻璃基板106保持130℃和约10-6托的条件下。冷却至室温之后,解除真空,从蒸发器取出钙片并置于RF溅射真空系统中,然后泵吸至10-6托。
该RF溅射真空系统具有温度控制支架,使用该支架冷却Ca和Al层104以及基板106的温度(注意:将三种测试装置100分别保持在150℃、44℃和14℃)。然后在Al和Ca层104上通过ONYX-3溅射枪(Angstrom Sciences,PA)在较快RF功率沉积条件(约70瓦正向/1瓦反射RF功率)和高氩压力(约20sccm)下溅射氟磷酸锡材料102(这种情况下具有以下组成:39.6摩尔%SnF2、38.7摩尔%SnO、19.9摩尔%P2O5、1.8摩尔%Nb2O5)(参见图2中的步骤204)。进行2小时溅射,以获得3-5微米范围厚度的膜102。估计具体沉积速率在1-5埃/秒范围。
完成Al和Ca层104的沉积之后,立刻停止对基板106的冷却,启动内插加热器2小时,将基板106的温度升高至100℃以上,并使得溅射的氟磷酸锡材料102固结(参见图2中的步骤206)。接着,解除真空,将热处理的装置100都置于烘箱300中,并保持在85℃和85%相对湿度。在各测试装置100中,Ca层104起初是高反射性金属镜。并且,如果水和/或氧渗透氟磷酸锡材料102,则金属Ca 104将反应并变成不透明的白色薄片状硬皮,可以用光学测量方法定量从而能够估计包封装置100在正常环境条件下运行的理论时间长度(注意:关于现今“标准化的”钙片测试的更详细讨论参见上述美国专利申请序列第11/207691号)。以下参考图4中所示详细讨论这个具体实验的结果。
参考图4,说明三种测试装置100的性能,这三种装置使用相同的氟磷酸锡材料102在相同沉积条件下生产,区别在于它们的基板106各自冷却至不同的温度。具体地说,第一装置100a在基板温度为150℃时用氟磷酸锡材料102包封。第二装置100b在基板温度为44℃时用氟磷酸锡材料102包封。并且,第三装置100c在基板温度为14℃时用氟磷酸锡材料102包封。这个实验的结果清楚说明,在高速沉积步骤204期间对基板106进行冷却时,溅射沉积的氟磷酸锡材料102具有优良的气密阻挡性能(将第三装置100c的可接受的性能与第一和第二装置100a和100b的不可接受性能相比较)。虽然不希望受到理论的限制,但是,发明人相信,冷却基板106导致溅射沉积的氟磷酸锡材料102中产生较小的粒度,从而使溅射沉积的氟磷酸锡材料102能更容易地烧结并在第三装置100c上形成所需的气密膜。相反,根据85/85测试结果,发明人认为第一和第二装置100a和100b是不能令人满意的,因为它们不能在85/85环境中坚持1000小时。但是,以上述美国专利申请序列第11/207691号中讨论的较慢速率沉积氟磷酸锡材料102时,第一和第二装置100a和100b能够在85/85环境中坚持1000小时。
本领域技术人员由以上内容容易理解,本发明涉及用于减少对装置100(例如OLED装置100)进行气密密封所需时间的密封方法200。该密封方法200包括以下步骤:(1)冷却未包封的装置100;(2)在冷却的装置100的至少一部分上沉积密封材料102以形成包封的装置100;和(3)热处理该包封的装置100以形成气密密封的装置100。该密封材料102是LLT材料102或含Sn2+无机氧化物材料102。需要时可以在装置100顶上沉积多层相同或不同种类的密封材料102。如上文讨论的,密封材料102特别适合于抑制氧和/或湿气劣化,这种劣化是多种装置100的共同问题,这些装置包括电子装置、食品容器和药物容器。另外,该密封材料102可用于减少例如因为化学活性渗透物而对装置100造成的光化学、水解和氧化损坏。使用该密封材料102的一些其他优点和特点如下:
A.可使用密封材料102制备满足OLED长期运行的最严格的不渗透性要求(小于10-6克水/平方米/天)的气密薄膜(约2微米)阻挡层,并且可以在装置(或基板材料)上快速溅射沉积和退火,在一些情况中在极低温度(低于40℃)下进行。该装置100包括但并不限于:
a.有机电子装置
有机发光二极管(OLED)
有机光生伏打装置(OPV)
有机传感器,含有或不含催化剂
用于柔性平板装置的柔性基板
射频标签(RFID)
b.半导体电子装置
发光二极管(LED)
光生伏打装置(PV)
传感器,含有或不含催化剂
用于柔性平板装置的柔性基板
射频标签(RFID)
基板材料包括但并不限于:
a.聚合物材料
用于柔性平板装置的柔性基板
食品包装
药物包装
B.用这些具体密封材料102密封有机电子装置100要求在固结/热处理期间不向室内引入氧或空气。密封时、尤其是低温(约40℃)密封时,要求无外部氧化源,使得这种密封技术成为制造有机电子装置的很有吸引力的技术。更为众所周知的原因在于,氧和湿气是与对位于有机电子装置如OLED中的有机层和/或阴极材料造成不利影响的氧化还原和光致退色劣化反应相关的主要劣化反应物。
C.可使用溅射沉积、蒸发和其他薄膜沉积方法沉积密封材料102。例如,通过在含氧环境中以非常高的速度在有起伏的基板例如塑料基板上蒸发沉积金属锡,可以生产高速沉积的含Sn2+无机氧化物膜102。或者,可在氧气环境中使用金属锡的反应性DC溅射在装置100上生产所需的高速沉积的含Sn2+无机氧化物膜。事实上可使用许多不同的薄膜沉积技术在装置100上沉积含Sn2+无机氧化物膜102(和LLT膜102)。
D.密封材料102可与不同粉末/掺杂剂配成批料,形成经过设计的组合物,从而在沉积的阻挡层中获得特定的物理-化学性质。以下是可与密封材料102混合从而在沉积的阻挡层中获得所需物理-化学性质的各种掺杂剂示例列表:
a.不透明性-透明性:例如,SnO在可见光波长是不透明的,但是可用磷酸盐之类的组分掺杂以产生透明膜。
b.折射率:可使用P2O5、BPO4和PbF2之类的掺杂剂来改变密封材料102的折射率,从而有助于优化例如装置100的光透过性和/或光提取性。例如,对于具有顶部发射的OLED装置100,可使用折射率匹配的氧化物材料取代其间的空气间隙,由此进行优化。
c.热膨胀系数(CTE):可使用SnF2、P2O5和PbF2之类的掺杂剂来改变密封材料102的CTE,有助于尽可能减少通常与“CTE不匹配”问题相关的不同形式的分层。
d.敏感性:可添加磷光体、量子点、无机/有机染料和分子赋予适用于装置优化的所需电子-光学特征。例如,可使用炭黑之类的掺杂剂来改变密封材料102的电子-光学特征(费米能级/阻抗)从而改善气密密封的装置100的效率(注意:如果可使得费米能级显著跃迁,则可以与已知氧化铟锡(ITO)体系类似的方式改变阻挡膜的传导性)。
e.改变溶解度和界面可湿性从而获得更好的粘着性:用SnF2之类的掺杂剂掺杂密封材料102可改变沉积的阻挡膜的可混溶性。需要时可进一步开发这个理念,通过改变密封材料102的表面润湿能力来实现粘着性方面的目的。
f.抗擦性:可使用SnO、SnF2和PbF2之类的掺杂剂在密封材料102中赋予硬度,这可能是各种装置100需要的。
E.图案化能力:溅射沉积或其他薄膜沉积方法使得可以采用不同的图案化技术,例如屏蔽等,来生产具有特定介电性质的微结构,从而有助于优化装置100的运行(例如有机薄膜晶体管(TFT)装置100可具有形成在其上的绝缘门,从而有助于获得良好的电压阈值)。
虽然已经在附图中说明并在以上详细描述中描述了本发明的一些实施方式,但是应当理解,本发明并不限于所揭示的实施方式,而是可以在不偏离以下权利要求中提出和限定的本发明原理的情况下进行许多重新排列、修改和替换。
Claims (25)
1.一种用于减少对装置进行气密密封所需时间的方法,所述方法包括以下步骤:
冷却未包封的装置;
在所述冷却的装置的至少一部分上沉积密封材料以形成包封的装置;和
热处理所述包封的装置以形成气密密封的装置,其中所述密封材料是低液相线温度无机材料或含Sn2+无机氧化物材料。
2.如权利要求1所述的方法,其特征在于,所述低液相线温度无机材料是以下材料中的一种、或是它们的任意组合:
氟磷酸锡材料;
钨掺杂的氟磷酸锡材料;
硫属化物材料;
亚碲酸盐材料;
硼酸盐材料;和
磷酸盐材料。
3.如权利要求1所述的方法,其特征在于,所述低液相线温度无机材料是氟磷酸锡材料,其具有以下组成:
20-85重量%Sn
2-20重量%P
10-36重量%O
10-36重量%F
0-5重量%Nb;且
Sn+P+O+F总计至少为75%。
4.如权利要求1所述的方法,其特征在于,所述低液相线温度无机材料的液相线温度≤1000℃。
5.如权利要求1所述的方法,其特征在于,所述低液相线温度无机材料的液相线温度≤600℃。
6.如权利要求1所述的方法,其特征在于,所述低液相线温度无机材料的液相线温度≤400℃。
7.如权利要求1所述的方法,其特征在于,所述含Sn2+无机氧化物材料是以下材料中的一种、或是它们的任意组合:
SnO;
SnO和硼酸盐材料;
SnO和磷酸盐材料;和
SnO和硼磷酸盐材料。
8.如权利要求1所述的方法,其特征在于,所述冷却步骤进一步包括将所述未包封的装置冷却至低于15℃的温度。
9.如权利要求1所述的方法,其特征在于,所述冷却步骤进一步包括将所述未包封的装置冷却至低于10℃的温度。
10.如权利要求1所述的方法,其特征在于,所述冷却步骤进一步包括将所述未包封的装置冷却至低于1℃的温度。
11.如权利要求1所述的方法,其特征在于,所述沉积步骤进一步包括以约5埃/秒的沉积速率在所述冷却的装置的所述至少一部分上沉积所述密封材料。
12.如权利要求1所述的方法,其特征在于,所述沉积步骤进一步包括以约25埃/秒的沉积速率在所述冷却的装置的所述至少一部分上沉积所述密封材料。
13.如权利要求1所述的方法,其特征在于,所述沉积步骤进一步包括以约75埃/秒的沉积速率在所述冷却的装置的所述至少一部分上沉积所述密封材料。
14.如权利要求1所述的方法,其特征在于,所述热处理步骤在真空或惰性环境中、并且在不会损坏所述装置中部件的温度下进行。
15.如权利要求1所述的方法,其特征在于,所述热处理步骤在低于400℃的温度进行。
16.如权利要求1所述的方法,其特征在于,所述热处理步骤在低于200℃的温度进行。
17.如权利要求1所述的方法,其特征在于,所述热处理步骤在低于100℃的温度进行。
18.如权利要求1所述的方法,其特征在于,所述热处理步骤在低于40℃的温度进行。
19.如权利要求1所述的方法,其特征在于,所述气密密封的装置的氧渗透率小于0.01立方厘米/平方米/大气压/天,且水渗透率小于0.01克/平方米/天。
20.如权利要求1所述的方法,其特征在于,所述密封材料掺杂有掺杂剂,以获得所需的特定物理-化学性质,这些性质包括以下的一种、或它们的任意组合:
不透明性-透明性;
折射率;
热膨胀系数;
敏感性;
费米能级/阻抗;
溶解度/界面可湿性;和
硬度。
21.如权利要求1所述的方法,其特征在于,所述装置选自以下之一:有机电子装置,包括:
有机发光二极管(OLED),
聚合物发光二极管(PLED),
光生伏打装置;
超材料,
薄膜晶体管;和
波导;
无机电子装置,包括:
发光二极管(LED),
光生伏打装置,
超材料,
薄膜晶体管;和
波导;
光学电子装置,包括:
光学开关;
波导;
柔性基板;
食品容器;和
药物容器。
22.一种装置,其包括:
基板;
至少一个部件;和
沉积的密封材料,其中所述至少一个部件被气密密封在所述沉积的密封材料和所述基板之间,在所述至少一个部件和所述基板上沉积所述密封材料之前,将所述基板冷却至约低于15℃的温度,所述沉积材料是低液相线温度无机材料或含Sn2+无机氧化物材料。
23.如权利要求22所述的装置,其特征在于,所述低液相线温度无机材料是以下的一种、或是它们的任意组合:
氟磷酸锡材料;
钨掺杂的氟磷酸锡材料;
硫属化物材料;
亚碲酸盐材料;
硼酸盐材料;和
磷酸盐材料。
24.如权利要求22所述的装置,其特征在于,所述含Sn2+无机氧化物材料是以下的一种、或是它们的任意组合:
SnO;
SnO和硼酸盐材料;
SnO和磷酸盐材料;和
SnO和硼磷酸盐材料。
25.一种制造气密密封的装置的方法,所述方法包括以下步骤:
对装置进行冷却;
在所述装置的至少一部分上沉积密封材料;和
热处理所述装置以形成气密密封的装置,其中所述密封材料是低液相线温度无机材料或含Sn2+无机氧化物材料。
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-
2008
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- 2008-06-17 JP JP2010513230A patent/JP2010532070A/ja active Pending
- 2008-06-17 WO PCT/US2008/007549 patent/WO2008156762A1/en active Application Filing
- 2008-06-17 EP EP15180988.6A patent/EP2975664A1/en not_active Withdrawn
- 2008-06-17 KR KR1020107001480A patent/KR101265862B1/ko active IP Right Grant
- 2008-06-17 EP EP08768546.7A patent/EP2054956B1/en not_active Expired - Fee Related
- 2008-06-18 TW TW097122801A patent/TWI388039B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
TW200919656A (en) | 2009-05-01 |
WO2008156762A1 (en) | 2008-12-24 |
KR20100050470A (ko) | 2010-05-13 |
JP2010532070A (ja) | 2010-09-30 |
US7722929B2 (en) | 2010-05-25 |
KR101265862B1 (ko) | 2013-05-20 |
US20100193353A1 (en) | 2010-08-05 |
US20070252526A1 (en) | 2007-11-01 |
US8435604B2 (en) | 2013-05-07 |
EP2054956B1 (en) | 2017-08-23 |
EP2975664A1 (en) | 2016-01-20 |
CN101689614B (zh) | 2012-07-11 |
EP2054956A1 (en) | 2009-05-06 |
TWI388039B (zh) | 2013-03-01 |
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