JP2010226120A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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Abstract
【解決手段】2つの周波数帯の高周波信号を取り扱うことが可能なデュアル方式のデジタル携帯電話機のRFパワーモジュールを構成する系統の異なる電力増幅回路2A,2Bを同一のICチップ1C内に配置した。この場合、電力増幅回路2A,2BをICチップ1Cの周辺に配置し、周辺回路3を電力増幅回路2A,2Bの間に配置させた。これにより、異なる系統の電力増幅回路2A,2Bを同一のICチップ1C内に設けて小型化が図れる上、異なる系統の電力増幅回路2A,2Bを同一のICチップ1Cに設けても電力増幅回路2A,2B間の距離が確保されるので電力増幅回路2A,2B間の結合を抑制させることができ、電力増幅回路2A,2B間でのクロストークを抑制できる。
【選択図】図3
Description
1.GSM(Global System for Mobile Communication)は、デジタル携帯電話に使用されている無線通信方式の1つまたは規格をいう。GSMには、使用する電波の周波数帯が3つあり、900MHz帯をGSM900または単にGSM、1800MHz帯をGSM1800またはDCS(Digital Cellular System)1800若しくはPCN、1900MHz帯をGSM1900またはDCS1900若しくはPCS(Personal Communication Services)という。なお、GSM1900は主に北米で使用されている。北米ではその他に850MHz帯のGSM850を使用する場合もある。
2.GMSK変調方式は、音声信号の通信に用いる方式で搬送波の位相を送信データに応じて位相シフトする方式である。また、EDGE変調方式は、データ通信に用いる方式でGMSK変調の位相シフトにさらに振幅シフトを加えた方式である。
本実施の形態1では、例えばGSM方式のネットワークを利用して情報を伝送するデジタル携帯電話に使用されるRF(Radio Frequency)パワーモジュールに本実施の形態1の半導体装置を適用した場合について説明する。
本実施の形態2では、ICチップの同一系統の隣接する増幅段の出力用のボンディングパッド間に接地用のボンディングパッドを配置した場合の一例を説明する。
本実施の形態3では、ICチップの同一系統の隣接する増幅段の入力用および出力用のボンディングパッドの配置の変形例について説明する。
本実施の形態4では、ICチップの異なる系統の電力増幅回路の配置を逆向きにした例について説明する。
1S 半導体基板
1EP エピタキシャル層
2A,2B 電力増幅回路
2A1〜2A3,2B1〜2B3 増幅段
2AM1〜2AM3,2BM1〜2BM3 整合回路
3 周辺回路
3A 制御回路
3A1 電源制御回路
3A2 バイアス電圧生成回路
3B バイアス回路
4a,4b 入力端子
5a,5b 出力端子
7 ゲート絶縁膜
8 ゲート電極
9 n+型の半導体領域
10a n−型の半導体領域
10b n+型の半導体領域
11a〜11d p++型の半導体領域
12 電極
15a,15a1〜15a5 伝送線路
15b,15b1〜15b5 伝送線路
15c 伝送線路
17a、17b 入力端子
18a1〜18a3 電源端子
18b1〜18b3 電源端子
19a,19b 出力端子
20 制御端子
21 電極
22 サーマルビア
23G 電極
23S 電極
25 フロントエンド・モジュール
26 ベースバンド回路
27 変復調用回路
28a,28b スイッチ回路
29 分波器
30 マザーボード
31 チップ部品
32 接合材
33 封止部材
35 接地端子
Qn,Qn1〜Qn3 nチャネル型のMOS・FET
Pin,Pout ボンディングパッド
Pg ボンディングパッド
R1,R2 抵抗
L1 インダクタ(受動素子)
C1 コンデンサ(受動素子)
Cm1〜Cm12 コンデンサ
C5,C6 コンデンサ
C1a 上部電極
C1b 下部電極
PL1〜PL6 プラグ
M,Mc 配線
M11〜M15 第1層配線
M21〜M26 第2層配線
PM RFパワーモジュール
MCB モジュール基板(配線基板)
CBT キャビティ
BW ボンディングワイヤ
DPS デジタル携帯電話機システム
ANT アンテナ
FLT1,FLT2 フィルタ
LPF1,LPF2 ロウパスフィルタ
MN1,MN2 インピーダンス整合回路
Claims (9)
- 複数の増幅回路を多段接続して構成される電力増幅回路を有する半導体装置であって、
前記複数の増幅回路の初段から最終段は、シリコンからなる同一の半導体基板上に形成され、
前記複数の増幅回路は電界効果トランジスタから構成され、
前記電界効果トランジスタのドレイン電極およびソース電極は、それぞれ前記半導体基板の主面および裏面に形成され、
複数の前記電界効果トランジスタの各ソース電極は前記半導体基板の裏面で電気的に接続され、
前記ソース電極は固定電位に接続され、
前記シリコンからなる前記半導体基板の抵抗率が10mΩ・cmより小さいことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、前記電力増幅回路は、800MHz帯、900MHz帯、1800MHz帯または1900MHz帯で動作することを特徴とする半導体装置。
- 請求項1記載の半導体装置において、前記半導体基板は配線基板に実装され、前記電界効果トランジスタのソースは、前記配線基板の固定電位に電気的に接続されていることを特徴とする半導体装置。
- 請求項1記載の半導体装置において、前記半導体基板には整合回路用の受動素子も設けられていることを特徴とする半導体装置。
- 請求項4記載の半導体装置において、前記半導体基板は配線基板に実装され、前記配線基板には前記増幅回路の入力および出力用の整合回路が設けられていることを特徴とする半導体装置。
- 請求項4記載の半導体装置において、前記整合回路用の受動素子の周囲にシールド層を設け、そのシールド層が半導体領域を通じて前記半導体基板に電気的に接続され、前記半導体基板の裏面の電極を通じて固定電位に電気的に接続されていることを特徴とする半導体装置。
- 請求項1記載の半導体装置において、前記半導体基板には、前記増幅回路に用いるバイアス回路および制御回路が設けられていることを特徴とする半導体装置。
- 請求項1記載の半導体装置は、複数の周波数帯の高周波信号に対応可能なマルチバンド方式を採用していることを特徴とする半導体装置。
- 請求項1記載の半導体装置において、前記増幅回路は3つの増幅段を持つことを特徴とする半導体装置。
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JP2010106357A JP5199307B2 (ja) | 2003-08-08 | 2010-05-06 | 半導体装置 |
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US (6) | US7116175B2 (ja) |
JP (2) | JP4668791B2 (ja) |
TW (1) | TW200518345A (ja) |
WO (1) | WO2005015636A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016149746A (ja) * | 2015-02-15 | 2016-08-18 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | 小型単一帯域電力増幅器を多重に有する多重帯域デバイス |
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JP2016149746A (ja) * | 2015-02-15 | 2016-08-18 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | 小型単一帯域電力増幅器を多重に有する多重帯域デバイス |
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JP2018042264A (ja) * | 2015-02-15 | 2018-03-15 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | 整合ネットワークの排除により効率が向上した電力増幅器 |
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US10177711B2 (en) | 2015-02-15 | 2019-01-08 | Skyworks Solutions, Inc. | Multi-band power amplification system having enhanced efficiency through elimination of band selection switch |
US10277174B2 (en) | 2015-02-15 | 2019-04-30 | Skyworks Solutions, Inc. | Radio-frequency amplification systems, devices and methods |
US10778149B2 (en) | 2015-02-15 | 2020-09-15 | Skyworks Solutions, Inc. | Power amplifiers having reduced loss |
US10790783B2 (en) | 2015-02-15 | 2020-09-29 | Skyworks Solutions, Inc. | Amplifiers for radio-frequency applications |
DE102015218849B4 (de) | 2015-02-15 | 2021-12-16 | Skyworks Solutions Inc. | Mehrfachband-Gerät mit mehreren miniaturisierten Einfachband-Leistungsverstärkern |
DE102015218848B4 (de) | 2015-02-15 | 2023-02-16 | Skyworks Solutions, Inc. | Mehrfachband-Leistungsverstärkungssystem mit verbesserter Effizienz durch Beseitigung eines Bandauswahlschalters |
JP2020010242A (ja) * | 2018-07-11 | 2020-01-16 | 住友電工デバイス・イノベーション株式会社 | 半導体増幅器 |
Also Published As
Publication number | Publication date |
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US20130082783A1 (en) | 2013-04-04 |
US7952434B2 (en) | 2011-05-31 |
US7116175B2 (en) | 2006-10-03 |
US20110199158A1 (en) | 2011-08-18 |
TWI373844B (ja) | 2012-10-01 |
US7348856B2 (en) | 2008-03-25 |
US8339204B2 (en) | 2012-12-25 |
US20090212873A1 (en) | 2009-08-27 |
WO2005015636A1 (ja) | 2005-02-17 |
TW200518345A (en) | 2005-06-01 |
JP4668791B2 (ja) | 2011-04-13 |
JP5199307B2 (ja) | 2013-05-15 |
US20080164947A1 (en) | 2008-07-10 |
US20060290431A1 (en) | 2006-12-28 |
JPWO2005015636A1 (ja) | 2006-10-05 |
US20050030107A1 (en) | 2005-02-10 |
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