JP2010226060A - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- JP2010226060A JP2010226060A JP2009074765A JP2009074765A JP2010226060A JP 2010226060 A JP2010226060 A JP 2010226060A JP 2009074765 A JP2009074765 A JP 2009074765A JP 2009074765 A JP2009074765 A JP 2009074765A JP 2010226060 A JP2010226060 A JP 2010226060A
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Abstract
【解決手段】集積回路を形成した第1の半導体基板上に基板間距離に等しい高さの無機系材料のポスト14pを形成し、第1の半導体基板上に、有機系材料の接着樹脂層30を基板間距離に等しい厚さ成膜し、接着樹脂層30を介して第1の半導体基板上に、集積回路を形成した第2の半導体基板を加圧しつつ接着し、第2の半導体基板、ポストを貫通するビア孔31を形成し、ビア孔31を埋め込むビア導電体を形成して半導体装置を製造する。
【選択図】図2−1
Description
集積回路を形成した第1の半導体基板と、
前記第1の半導体基板上方に配置され、集積回路を形成した第2の半導体基板と、
前記第1の半導体基板上に形成された無機系材料のポストと、
前記ポスト周辺において前記第1の半導体基板と前記第2の半導体基板との間の空間を満たす有機系接着層と、
前記第2の半導体基板、前記ポストを貫通し、前記第1の半導体基板に達する基板貫通ビア導電体と、
を有する半導体装置
が提供される。
集積回路を形成した第1の半導体基板上に、所望の基板間距離を高さとする無機系材料のポストを形成する工程と、
前記ポストを形成した前記第1の半導体基板上に、前記所望の基板間距離を厚さとする有機系材料の接着樹脂層を成膜する工程と、
前記接着樹脂層を介して前記第1の半導体基板上に、集積回路を形成した第2の半導体基板を加圧しつつ接着する工程と、
前記第2の半導体基板、前記ポストを貫通するビア孔を形成する工程と、
前記ビア孔を埋め込むビア導電体を形成する工程と、
を含む半導体装置の製造方法
が提供される。
集積回路を形成した第1の半導体基板と、
前記第1の半導体基板上方に配置され、集積回路を形成した第2の半導体基板と、
前記第1の半導体基板上に形成された無機系材料のポストと、
前記ポスト周辺において前記第1の半導体基板と前記第2の半導体基板との間の空間を満たす有機系接着層と、
前記第2の半導体基板、前記ポストを貫通し、前記第1の半導体基板に達する基板貫通ビア導電体と、
を有する半導体装置。
前記有機系樹脂層が前記ポストと前記第2の半導体基板との間にも配置されている付記1記載の半導体装置。
前記無機系材料が、酸化シリコン、窒化シリコン、酸化窒化シリコンのいずれかである付記1または2記載の半導体装置。
前記無機系材料の熱膨張係数が2ppm/℃〜18ppm/℃の範囲内である付記1〜3のいずれか1項記載の半導体装置。
前記基板貫通ビア導電体が、銅、タングステン、シリコンのいずれかで形成されたプラグを有する付記1〜4のいずれか1項記載の半導体装置。
集積回路を形成した第1の半導体基板上に、所望の基板間距離を高さとする無機系材料のポストを形成する工程と、
前記ポストを形成した前記第1の半導体基板上に、前記所望の基板間距離を厚さとする有機系材料の接着樹脂層を成膜する工程と、
前記接着樹脂層を介して前記第1の半導体基板上に、集積回路を形成した第2の半導体基板を加圧しつつ接着する工程と、
前記第2の半導体基板、前記ポストを貫通するビア孔を形成する工程と、
前記ビア孔を埋め込むビア導電体を形成する工程と、
を含む半導体装置の製造方法。
前記ビア孔を形成する工程が、前記第2の半導体基板をドライエッチし、前記ポストでストップさせるサブ工程と、前記ポストをドライエッチするサブ工程を含む付記6記載の半導体装置の製造方法。
前記ポストを形成する工程の前に、前記ビア孔を形成する領域に延在する再配線層を形成する工程を含み、前記ポストをドライエッチするサブ工程は前記再配線層でエッチングをストップさせる付記7記載の半導体装置の製造方法。
前記無機系材料が、酸化シリコン、窒化シリコン、酸化窒化シリコンのいずれかである付記6〜8のいずれか1項記載の半導体装置の製造方法。
前記無機系材料の熱膨張係数が2ppm/℃〜18ppm/℃の範囲内である付記6〜9のいずれか1項記載の半導体装置の製造方法。
前記ポストを形成する工程が、テトラエトキシシラン(TEOS)を原料としたプラズマ化学気相堆積で酸化シリコン膜を成膜する工程を含む付記6−10のいずれか1項記載の半導体装置の製造方法。
前記ポストを形成する工程が、レジストパターンをマスクとして(CF4+O2)混合ガスを用いたドライエッチングにより酸化シリコン膜をパターニングする工程を含む付記11記載の半導体装置の製造方法。
前記ビア孔を形成する工程が、レジストパターンをマスクとして(SF6+C4F8)混合ガスを用いたドライエッチングにより第2の半導体基板を選択的に異方性エッチングする工程を含む付記6〜12のいずれか1項記載の半導体装置の製造方法。
前記再配線層が、銅で形成される付記6〜13のいずれか1項記載の半導体装置の製造方法。
前記ビア導電体が、銅、タングステン、シリコンのいずれかで形成されたプラグを有する付記6〜14のいずれか1項記載の半導体装置の製造方法。
11 酸化シリコン膜
12 再配線層(Cu層)、
14 酸化シリコン膜(ポスト)、
14p ポスト、
14d ダミーポスト、
20 上側基板、
21 酸化シリコン膜、
22 銅層、
30 接着樹脂(BCB)層、
31 ビア孔、
32 アンダーカット、
40 支持基盤。
Claims (10)
- 集積回路を形成した第1の半導体基板と、
前記第1の半導体基板上方に配置され、集積回路を形成した第2の半導体基板と、
前記第1の半導体基板上に形成された無機系材料のポストと、
前記ポスト周辺において前記第1の半導体基板と前記第2の半導体基板との間の空間を満たす有機系接着層と、
前記第2の半導体基板、前記ポストを貫通し、前記第1の半導体基板に達する基板貫通ビア導電体と、
を有する半導体装置。 - 前記有機系樹脂層が前記ポストと前記第2の半導体基板との間にも配置されている請求項1記載の半導体装置。
- 前記無機系材料が、酸化シリコン、窒化シリコン、酸化窒化シリコンのいずれかである請求項1または2記載の半導体装置。
- 前記無機系材料の熱膨張係数が2ppm/℃〜18ppm/℃の範囲内である請求項1〜3のいずれか1項記載の半導体装置。
- 前記基板貫通ビア導電体が、銅、タングステン、シリコンのいずれかで形成されたプラグを有する請求項1〜4のいずれか1項記載の半導体装置。
- 集積回路を形成した第1の半導体基板上に、所望の基板間距離を高さとする無機系材料のポストを形成する工程と、
前記ポストを形成した前記第1の半導体基板上に、前記所望の基板間距離を厚さとする有機系材料の接着樹脂層を成膜する工程と、
前記接着樹脂層を介して前記第1の半導体基板上に、集積回路を形成した第2の半導体基板を加圧しつつ接着する工程と、
前記第2の半導体基板、前記ポストを貫通するビア孔を形成する工程と、
前記ビア孔を埋め込むビア導電体を形成する工程と、
を含む半導体装置の製造方法。 - 前記ビア孔を形成する工程が、前記第2の半導体基板をドライエッチし、前記ポストでストップさせるサブ工程と、前記ポストをドライエッチするサブ工程を含む請求項6記載の半導体装置の製造方法。
- 前記ポストを形成する工程の前に、前記ビア孔を形成する領域に延在する再配線層を形成する工程を含み、前記ポストをドライエッチするサブ工程は前記再配線層でエッチングをストップさせる請求項7記載の半導体装置の製造方法。
- 前記無機系材料が、酸化シリコン、窒化シリコン、酸化窒化シリコンのいずれかである請求項6〜8のいずれか1項記載の半導体装置の製造方法。
- 前記無機系材料の熱膨張係数が2ppm/℃〜18ppm/℃の範囲内である請求項6〜9のいずれか1項記載の半導体装置の製造方法。
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- 2010-03-05 US US12/718,448 patent/US9202752B2/en not_active Expired - Fee Related
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JP2012142360A (ja) * | 2010-12-28 | 2012-07-26 | Ulvac Japan Ltd | 半導体装置 |
JP2012142359A (ja) * | 2010-12-28 | 2012-07-26 | Ulvac Japan Ltd | 絶縁膜形成方法、及び絶縁膜形成装置 |
JP2012190826A (ja) * | 2011-03-08 | 2012-10-04 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
JP2014514760A (ja) * | 2011-04-04 | 2014-06-19 | オクメティック オーユーイー | 1層以上の多結晶シリコン層を基材に堆積する方法 |
US9728452B2 (en) | 2011-04-04 | 2017-08-08 | Okmetic Oyj | Method for depositing one or more polycrystalline silicon layers on substrate |
US10047257B2 (en) | 2013-09-27 | 2018-08-14 | Daicel Corporation | Adhesive agent composition for multilayer semiconductor |
KR20160063336A (ko) | 2013-09-27 | 2016-06-03 | 주식회사 다이셀 | 반도체 적층용 접착제 조성물 |
JP2015233049A (ja) * | 2014-06-09 | 2015-12-24 | 株式会社ディスコ | 積層デバイスの製造方法 |
US9648741B2 (en) | 2014-12-15 | 2017-05-09 | Fujitsu Limited | Electronic device and method for manufacturing electronic device |
US10619047B2 (en) | 2015-06-17 | 2020-04-14 | Daicel Corporation | Curable composition |
WO2016204014A1 (ja) | 2015-06-17 | 2016-12-22 | 株式会社ダイセル | 硬化性組成物 |
KR20180018530A (ko) | 2015-06-17 | 2018-02-21 | 주식회사 다이셀 | 경화성 조성물, 접착 시트, 경화물, 적층물, 접착 시트의 제조 방법, 및 장치 |
US11066586B2 (en) | 2015-06-17 | 2021-07-20 | Daicel Corporation | Curable composition, adhesive sheet, cured product, laminate, method for producing adhesive sheet, and device |
KR20180019090A (ko) | 2015-06-17 | 2018-02-23 | 주식회사 다이셀 | 경화성 조성물 |
WO2018199117A1 (ja) | 2017-04-28 | 2018-11-01 | 三井化学株式会社 | 基板積層体及び基板積層体の製造方法 |
US11859110B2 (en) | 2017-04-28 | 2024-01-02 | Mitsui Chemicals, Inc. | Substrate laminated body and method of manufacturing substrate laminated body |
KR20190136059A (ko) | 2017-04-28 | 2019-12-09 | 미쓰이 가가쿠 가부시키가이샤 | 기판 적층체 및 기판 적층체의 제조 방법 |
KR20200007893A (ko) | 2017-05-17 | 2020-01-22 | 주식회사 다이셀 | 접착제용 경화성 조성물, 접착 시트, 경화물, 적층물 및 장치 |
KR20200010317A (ko) | 2017-05-17 | 2020-01-30 | 주식회사 다이셀 | 접착제 조성물, 경화물, 적층체 및 장치 |
WO2018212233A1 (ja) | 2017-05-17 | 2018-11-22 | 株式会社ダイセル | 接着剤用硬化性組成物、接着シート、硬化物、積層物、及び装置 |
WO2018212257A1 (ja) | 2017-05-17 | 2018-11-22 | 株式会社ダイセル | 接着剤組成物、硬化物、積層体、及び装置 |
WO2020085183A1 (ja) | 2018-10-26 | 2020-04-30 | 三井化学株式会社 | 基板積層体の製造方法及び積層体 |
KR20210060571A (ko) | 2018-10-26 | 2021-05-26 | 미쓰이 가가쿠 가부시키가이샤 | 기판 적층체의 제조 방법 및 적층체 |
WO2022054839A1 (ja) | 2020-09-10 | 2022-03-17 | 三井化学株式会社 | 組成物、積層体及び積層体の製造方法 |
WO2023032923A1 (ja) | 2021-09-06 | 2023-03-09 | 三井化学株式会社 | 半導体用の膜を形成するための組成物、積層体及び基板積層体 |
Also Published As
Publication number | Publication date |
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TW201041118A (en) | 2010-11-16 |
US20100244201A1 (en) | 2010-09-30 |
US9202752B2 (en) | 2015-12-01 |
JP5201048B2 (ja) | 2013-06-05 |
TWI491013B (zh) | 2015-07-01 |
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