JP5549026B1 - マイクロ空室の内壁面処理方法 - Google Patents
マイクロ空室の内壁面処理方法 Download PDFInfo
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- JP5549026B1 JP5549026B1 JP2013544915A JP2013544915A JP5549026B1 JP 5549026 B1 JP5549026 B1 JP 5549026B1 JP 2013544915 A JP2013544915 A JP 2013544915A JP 2013544915 A JP2013544915 A JP 2013544915A JP 5549026 B1 JP5549026 B1 JP 5549026B1
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- 238000012545 processing Methods 0.000 claims abstract description 87
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- 239000000463 material Substances 0.000 claims description 3
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- 239000000758 substrate Substances 0.000 abstract description 18
- 238000004140 cleaning Methods 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 8
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- 239000007789 gas Substances 0.000 description 50
- 239000002699 waste material Substances 0.000 description 26
- 230000006837 decompression Effects 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 239000000126 substance Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- 238000011084 recovery Methods 0.000 description 9
- 238000009434 installation Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 229910021642 ultra pure water Inorganic materials 0.000 description 6
- 239000012498 ultrapure water Substances 0.000 description 6
- 239000003814 drug Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000003595 mist Substances 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011553 magnetic fluid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
しかし、その基本技術の一つである露光技術の停滞により、微細化による高集積化に限界説が云われ始めている。また、基本電子素子の微細化はLSIデバイス化した際のデバイスの温度上昇や電子漏洩の潜在的問題もある。最近は、微細化に依らない高集積化の技術開発もされ始めている。その一つがLSIの3次元化(3DI:3 Dimensional Integration)の技術である。この技術の実現に必要な技術の一つが、TSV(Through Silicon Via)の技術である。この技術を用いた3D集積化LSIデバイスは、ワイヤーボンディング技術を用いるパッケージレベルの3D集積化デバイスとは異なり、集積している一つ一つのデバイス間の電気的相互接続特性の飛躍的向上も期待され、次世代の高集積化デバイスとして有力である。
101・・・Si(シリコン)半導体基板
102・・・SiO2(酸化シリコン)層
103・・・Si層(103−1,103−2)
104・・・ホール
105・・・気泡
106・・・処理液
107・・・気液界面
108・・・内側壁面(108−1,108−2)
109・・・内底壁面
110・・・開口
200・・・処理システム
201・・・減圧処理チャンバー(室)
202・・・被処理体設置テーブル
202−1・・・被処理体設置テーブル用の回転軸体
203・・・被処理体
204・・・雰囲気ガス供給ライン
205・・・処理(薬)液供給ライン
206・・・回収フード
207・・・減圧廃液タンク
208・・・大気若しくはN2供給ライン
209・・・排液ライン
210・・・回収ライン
211、212・・・排気ライン
213・・・排気ポンプ
214、215,216,217,218,219,220、221・・・バルプ
222・・・処理液用の供給量可変ノズル
301・・・スピナー
302・・・薬莢
303・・・アルミフレーム
400・・・窒素圧送方式処理(薬)液供給系
401・・・キャニスター
402・・・処理液供給ライン
403、411・・・ストップバルブ
404・・・流量調節バルブ
405・・・流量計
406・・・ミストトラップ
407、408・・・窒素ガス供給ライン
409・・・ベント(排気)バルブ
410・・・分流継手
412・・・レギュレーター
413・・・継手
414、415・・・クイックコネクター
501・・・ドレイン用のフランジ
502・・・減圧用のフランジ
503・・・廃液導入用のフランジ
504・・・ガス導入用のフランジ
505・・・真空計
506・・・流量計
507・・・液位観察用窓
600・・・減圧処理チャンバー
601・・・チャンバー構成体
602・・・上蓋
603・・・被処理体設置用のステージ
604・・・回転軸体
605・・・磁性流体シール
606・・・特殊処理(薬)液供給ライン
607・・・オゾン水供給ライン
608・・・超純水供給ライン
609,610,611,618・・・流量計
612,613,614、617、621,624・・・バルブ
615・・・ガス導入ライン
619・・・ガス排出ライン
616、620、623・・・フランジ
622・・・廃液ライン
625・・・観察用窓(625−1,625−2)
626・・・真空計
701・・・ガス噴出内壁管
702・・・ガス噴出口
Claims (1)
- 処理液が付与される表面と該表面に開口を有するマイクロ空室を内部に有し、該マイクロ空室のアスペクト比(l/r)が5以上かまたはアスペクト比が5未満でかつV/S(V: マイクロ空室の容積、S:開口の面積)が3以上である基体が設置されている減圧可能な処理空間を減圧し、次いで該減圧されている処理空間に前記処理液を導入して前記マイクロ空室の内壁面を処理することを有し、
前記マイクロ空室の内壁面は、内底壁面を有し、当該内底壁面は、当該内底壁面を除く前記マイクロ空室の内壁面を構成する材料とは異なる材料で形成され、
前記処理液は、前記内底壁面の処理に用いられる、ことを特徴とするマイクロ空室の内壁面処理方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2013/002645 WO2014170928A1 (ja) | 2013-04-18 | 2013-04-18 | マイクロ空室の内壁面処理方法 |
Related Child Applications (1)
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JP2014012683A Division JP2014212299A (ja) | 2014-01-27 | 2014-01-27 | マイクロ空室の内壁面処理方法 |
Publications (2)
Publication Number | Publication Date |
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JP5549026B1 true JP5549026B1 (ja) | 2014-07-16 |
JPWO2014170928A1 JPWO2014170928A1 (ja) | 2017-02-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013544915A Expired - Fee Related JP5549026B1 (ja) | 2013-04-18 | 2013-04-18 | マイクロ空室の内壁面処理方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20160064213A1 (ja) |
JP (1) | JP5549026B1 (ja) |
KR (1) | KR20150136499A (ja) |
CN (1) | CN105122425A (ja) |
WO (1) | WO2014170928A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105374742A (zh) * | 2014-09-02 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2014598B1 (en) * | 2015-04-08 | 2017-01-20 | Suss Microtec Lithography Gmbh | Method for coating a substrate. |
JP6685197B2 (ja) * | 2016-07-26 | 2020-04-22 | 東京エレクトロン株式会社 | 基板処理装置およびノズル |
TWI765936B (zh) | 2016-11-29 | 2022-06-01 | 美商東京威力科創Fsi股份有限公司 | 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭 |
US10843236B2 (en) | 2017-01-27 | 2020-11-24 | Tel Manufacturing And Engineering Of America, Inc. | Systems and methods for rotating and translating a substrate in a process chamber |
KR102400186B1 (ko) * | 2017-06-19 | 2022-05-20 | 삼성전자주식회사 | 공정 챔버 및 이를 포함하는 기판 처리 장치 |
US11545387B2 (en) | 2018-07-13 | 2023-01-03 | Tel Manufacturing And Engineering Of America, Inc. | Magnetic integrated lift pin system for a chemical processing chamber |
JP2021034561A (ja) * | 2019-08-23 | 2021-03-01 | キオクシア株式会社 | 半導体製造装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6310531A (ja) * | 1986-07-02 | 1988-01-18 | Matsushita Electric Ind Co Ltd | 処理方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0444322A (ja) * | 1990-06-11 | 1992-02-14 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5368634A (en) * | 1993-07-26 | 1994-11-29 | Hughes Aircraft Company | Removing bubbles from small cavities |
JPH09275085A (ja) * | 1996-04-05 | 1997-10-21 | Hitachi Ltd | 半導体基板の洗浄方法ならびに洗浄装置および半導体基板製造用成膜方法および成膜装置 |
US5966631A (en) * | 1997-10-03 | 1999-10-12 | International Business Machines Corporation | Forced plug processing for high aspect ratio structures |
US7125809B1 (en) * | 2000-08-31 | 2006-10-24 | Micron Technology, Inc. | Method and material for removing etch residue from high aspect ratio contact surfaces |
US7935571B2 (en) * | 2008-11-25 | 2011-05-03 | Freescale Semiconductor, Inc. | Through substrate vias for back-side interconnections on very thin semiconductor wafers |
JP5201048B2 (ja) * | 2009-03-25 | 2013-06-05 | 富士通株式会社 | 半導体装置とその製造方法 |
US20120102778A1 (en) * | 2010-04-22 | 2012-05-03 | Ismail Kashkoush | Method of priming and drying substrates |
JP5278492B2 (ja) * | 2010-06-16 | 2013-09-04 | 株式会社デンソー | 半導体装置の製造方法 |
JP6326041B2 (ja) * | 2012-04-17 | 2018-05-16 | プラクスエア・テクノロジー・インコーポレイテッド | 二酸化炭素の精製された多相のプロセスツールへのデリバリーシステム |
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2013
- 2013-04-18 KR KR1020157030067A patent/KR20150136499A/ko not_active Application Discontinuation
- 2013-04-18 CN CN201380075653.XA patent/CN105122425A/zh active Pending
- 2013-04-18 JP JP2013544915A patent/JP5549026B1/ja not_active Expired - Fee Related
- 2013-04-18 US US14/784,725 patent/US20160064213A1/en not_active Abandoned
- 2013-04-18 WO PCT/JP2013/002645 patent/WO2014170928A1/ja active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6310531A (ja) * | 1986-07-02 | 1988-01-18 | Matsushita Electric Ind Co Ltd | 処理方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105374742A (zh) * | 2014-09-02 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
CN105374742B (zh) * | 2014-09-02 | 2019-03-12 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20150136499A (ko) | 2015-12-07 |
JPWO2014170928A1 (ja) | 2017-02-16 |
US20160064213A1 (en) | 2016-03-03 |
WO2014170928A1 (ja) | 2014-10-23 |
CN105122425A (zh) | 2015-12-02 |
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