JP2010161384A - BiCDMOS構造及びその製造方法 - Google Patents
BiCDMOS構造及びその製造方法 Download PDFInfo
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Abstract
【解決手段】基層10内に下向きに延出し、且つ基層の上に配置されたエピタキシャル層40内に上向きに延出し、かつエピタキシャル層の上側主面の下に配置された埋め込み絶縁領域21Bと、エピタキシャル層内のみに配置され、かつ埋め込み絶縁領域の上側主面から上向きに延出した埋め込みウェル領域44Bと、エピタキシャル層内に配置され、かつエピタキシャル層の上側主面からエピタキシャル層内に下向きに延出し、かつ埋め込みウェル領域の上側主面に接触する下側主面を備えたウェル領域51Bとを有し、バイポーラトランジスタがウェル領域内に形成され、MOSトランジスタがウェル領域外のエピタキシャル層の上側主面に形成される。
【選択図】図35
Description
バイポーラトランジスタ、比較的高電圧のCMOSトランジスタ、比較低電圧のCMOSトランジスタ、DMOSトランジスタ、ツェナーダイオード、及び薄型フィルム抵抗、またはそれらの任意の所望の組合せの全てを同一の集積回路上に同時に形成する方法(以下“BiCDMOSプロセス”と呼ぶことにする)が提供される。そのプロセスでは、少ないマスキング過程が用いられ、高性能のトランジスタ構造が形成され、かつ機能する基板の高い歩留りが達成される。絶縁構造、バイポーラトランジスタ構造、CMOSトランジスタ構造、DMOSトランジスタ構造、ツェナーダイオード構造、及び薄型フィルム抵抗構造もまた提供される。
10A DMOS領域
10B 垂直PNPバイポーラ領域
10C 垂直NPNバイポーラ領域
10D 比較的低電圧のNMOS領域
10E 比較的高電圧のNMOS領域
10F 埋め込みツェナー領域
10G 比較的高電圧のPMOS領域
10H 比較的低電圧のPMOS領域
11 基層10の上側主面
12 最初の酸化膜
12A、12B、12C 開口部
21A、21B、21C N+埋め込み層領域
22A、22B、22C 薄い酸化膜
30 フォトレジスト層
30B、30D 開口部
40 エピタキシャル酸化膜
41 エピタキシャル層42の上側主面
42 エピタキシャル層
43B、44B P+領域
43D P+埋め込み層領域
52B、52D、52E 開口部
51B、51D、51E P−ウェル領域
60A、60C 開口部
61A、61C N+シンカ領域
70B、70F 開口部
71B P+コレクタ接触領域
71F P+埋め込みツェナーアノード領域
80 ベース酸化膜
81 シリコン窒化膜
82 低温度酸化膜(LTO)
83A〜83H 活性エリアマスク領域
90 フォトレジスト層
91B、91D、91E 開口部
100B フィールド酸化領域
100F/A フィールド酸化膜
100A/E フィールド酸化膜
100E/G フィールド酸化膜
100G/H フィールド酸化膜
100H/D フィールド酸化膜
100D/B フィールド酸化膜
100B/C フィールド酸化膜
101 フォトレジスト層
102B 開口部
103 ベース領域
110A ポリシリコンゲート
110D ポリシリコンゲート
110E ポリシリコンゲート
110G ポリシリコンゲート
110H ポリシリコンゲート
120 フォトレジスト層
121A 開口部
121F 開口部
122 P−ボディ領域
130F ツェナー部分
140 フォトレジスト層
141C、141G 開口部
142C P−ベース領域
142G ドレイン領域
150 フォトレジスト層
151A1 開口部
151A2 開口部
151B 開口部
151C1 開口部
151C2 開口部
151D 開口部
151E1 開口部
151E2 開口部
151F 開口部
152 N+ソース領域
153 ソース領域
154 ドレイン領域
155 ドレイン接触領域
156 チャネル領域
157 ソース領域
158 ドレイン領域
159 ベース接触領域
160 フォトレジスト層
161A1 開口部
161A2 開口部
161B1 開口部
161B2 開口部
161C 開口部
161G1 開口部
161G2 開口部
161H 開口部
162 P+ボディ接触領域
163 ソース領域
164 ドレイン接触領域
165 ドリフト領域
166 ソース領域
167 ドレイン領域
168 エミッタ領域
169 ベース接触領域
170 エミッタ領域
170A BPSG層
171 抵抗性Si−Cr領域
172A Ti−W層
172B Ti−W層
173A アルミニウム接続層
173B アルミニウム接続層
180 活性領域
181B P型フィールド注入領域
181B/C P型フィールド注入領域
181D/B P型フィールド注入領域
182B/C N型フィールド注入領域
182D/B N型フィールド注入領域
190 N+埋め込み層領域
191 基層とエピタキシャル層との境界
192 N+シンカ領域
193、194 厚いフィールド酸化膜
195 フィールド領域
196 活性領域
197、198 N型フィールド注入領域
199 P−ベース領域
200、201 ゲート酸化膜部分
202 エミッタ接触開口部
203 ベース開口部
204 コレクタ接触開口部
205 ポリシリコン層
206、207 ほぼ垂直な側壁
208 N+エミッタ領域
209 ベース接触領域
210 ベース電極
210A N+埋め込み層領域
211 コレクタ電極
211A P+埋め込み層領域
212 エミッタ電極
212A P+埋め込みウェル領域
213 絶縁層
213A P−ウェル領域
214 絶縁層
214A、214B Nフィールド注入領域
215、216 フィールド酸化膜
217、218 Pフィールド注入領域
219、220 フィールド酸化膜
221 エミッタ開口部
222 N−ベース領域
223 P+型エミッタ領域
224、225 N型注入領域
226 Nベース接触領域
227 開口部
228 P+コレクタ接触領域
230 P−ウェル領域
231、232、233 フィールド酸化膜部分
234 活性領域
235、236 P型フィールド注入領域
237、238 N型フィールド注入領域
239 ボディ領域
240 ドレイン接触領域
241 ドリフト領域部分
242 フィ−ルド注入領域
243 ソース領域
244 ソース接触領域
245 ゲート酸化膜
246、247 開口部
248 ポリシリコンゲート層
249 絶縁層
250 ソース電極
251 ドレイン電極
252 チャネル部分
246、247 開口部
248 ポリシリコンゲート層
249 絶縁層
250 ソース電極
250A P型埋め込み層
251 ドレイン電極
251A P型埋め込み層
252 チャネル領域
252A P型絶縁シンカ領域
253 P型絶縁シンカ領域
254 エピタキシャル層の絶縁された領域
254A ドリフト領域
255 エピタキシャル層の他の部分
256、257、258 フィールド酸化膜
258A 活性領域
259、260、261 N型フィールド注入領域
262 N+型埋め込み層領域
263 N+シンカ領域
264 N+ドレイン接触領域
265 低濃度にドープされたドレイン領域
266 P型シリコンボディ領域
267 N+ソース領域
268 チャネル領域
269 P+ボディ接触領域
270、271、272 薄いゲート酸化膜部分
273 ポリシリコンゲート層
274 厚い絶縁層の第1部分
275 厚い絶縁層の第2部分
276 厚い絶縁層の第1部分
277、278 開口部
279 ソース電極
280 ドレイン電極
281 N+型埋め込み層の上側主面
282 ドレイン領域265とドレイン接触領域264の下側面
300 フィールド酸化物領域
301 N型フィールド注入領域
302 厚い絶縁層
303 基層電極
304 開口部
Claims (8)
- トランジスタを含有する絶縁ウエル構造であって、
第1導電型の半導体材料の基層10であって上側面を有する該基層と、
前記第1導電型とは相異なる第2導電型の半導体材料のエピタキシャル層40であって、或るN不純物濃度を有し、前記基層の上に配置され、上側面を有する該エピタキシャル層と、
前記基層内に下向きに延出し且つ前記エピタキシャル層内に上向きに延出する埋め込み絶縁領域21Bであって、前記エピタキシャル層の前記上側面の下に配置される上側面と前記基層の前記上側面の下に配置される下側面を有し、前記第2導電型の半導体材料よりなる該埋め込み絶縁領域21Bと、
前記エピタキシャル層の中にのみ配置された埋め込みウエル領域44Bであって、前記埋め込み絶縁領域21Bの前記上側面から上向きに延出し前記基層10から分離され且つ電気的に絶縁され、上側面を有しており、前記第1導電型の半導体材料よりなる該埋め込みウエル領域44Bと、
前記埋め込み絶縁領域21Bの前記下側面より前記基層10内に下向きに延出する前記第1導電型の半導体材料の第2埋め込みウエル領域43Bであって、前記埋め込み絶縁領域21Bによって前記埋め込みウエル領域44Bから分離され、前記第1導電型の半導体材料よりなる該第2埋め込みウエル領域43Bと、
前記エピタキシャル層内に配置されるウエル領域51Bであって、前記エピタキシャル層の前記上側面より前記エピタキシャル層40内に下向きに延出し、該ウエル領域51Bは下側面を有し、該下側面は前記埋め込みウエル領域44Bの前記上側面に接触しており、該ウエル領域51Bは前記基層10から分離され且つ電気的に絶縁され、前記第1導電型の半導体材料より成る該ウエル領域51Bとより成り、前記トランジスタが前記エピタキシャル層の前記上側面で前記ウエル領域内に形成されることを特徴とする絶縁ウエル構造。 - トランジスタを含有する絶縁ウエル構造であって、
第1導電型の半導体材料の基層であって上側面を有する該基層と、
前記第1導電型とは相異なる第2導電型の半導体材料のエピタキシャル層であって、前記基層の上に配置され、上側面を有する該エピタキシャル層と、
前記基層内に下向きに延出し且つ前記エピタキシャル層内に上向きに延出する埋め込み絶縁領域であって、前記エピタキシャル層の前記上側面の下に配置される上側面と前記基層の前記上側面の下に配置される下側面を有し、前記第2導電型の半導体材料よりなる該埋め込み絶縁領域と、
前記エピタキシャル層の中にのみ配置された埋め込みウエル領域であって、前記埋め込み絶縁領域の前記上側面から上向きに延出し前記基層から分離され且つ電気的に絶縁され、上側面を有しており、前記第1導電型の半導体材料よりなる該埋め込みウエル領域と、
前記埋め込み絶縁領域の前記下側面より前記基層内に下向きに延出する、前記第1導電型の半導体材料の第2埋め込みウエル領域であって、前記埋め込み絶縁領域によって前記埋め込みウエル領域から分離され、前記第1導電型の半導体材料よりなる該第2埋め込みウエル領域と、
前記エピタキシャル層内に配置されるウエル領域であって、前記エピタキシャル層の前記上側面より前記エピタキシャル層内に下向きに延出し、該ウエル領域は下側面を有し、該下側面は前記埋め込みウエル領域の前記上側面に接触しており、該ウエル領域は前記基層から分離され且つ電気的に絶縁され、前記第1導電型の半導体材料より成る該ウエル領域とより成り、前記トランジスタが前記エピタキシャル層の前記上側面で前記ウエル領域内に形成されることを特徴とする絶縁ウエル構造。 - 前記エピタキシャル層の上側面から前記ウエル領域51B内に下向きに延出するコレクタ接触領域71Bであって、前記第1導電型の半導体材料よりなる該コレクタ接触領域と、
前記エピタキシャル層の前記上側面から前記ウエル領域内に下向きに延出するベース領域103であって、前記コレクタ接触領域からは横方向に隔てられて形成される前記第2導電型の半導体材料よりなる該ベース領域と、
少なくとも前記ベース領域内に部分的に形成されるベース接触領域159であって、前記エピタキシャル層の前記上側面から前記ベース領域内に下向きに延出し、前記第2導電型の半導体材料よりなる該ベース接触領域と、
前記ベース領域内に形成されたエミッタ領域168であって、前記ベース接触領域から横方向に隔てられて形成され、前記第1導電型の半導体材料よりなる該エミッタ領域を、さらに、有することを特徴とする請求項1又は2に記載の構造。 - 前記エピタキシャル層が、前記第2導電型の不純物の5×1015乃至2×1016イオン/cm3の範囲内の不純物濃度を有することを特徴とする請求項1に記載の構造。
- 前記エピタキシャル層が10μmの厚さを有し、且つ前記第2導電型の不純物の5×1015乃至1×1016イオン/cm3の範囲内の不純物濃度を有することを特徴とする請求項1に記載の構造。
- 前記エピタキシャル層は8μmの厚さであり、前記トランジスタは、60ボルトまでの電圧での継続動作可能な比較的高電圧垂直バイポーラトランジスタであり、さらに、比較的低電圧の20ボルトNチャネル電界効果トランジスタを有し、前記埋め込み絶縁領域及び前記埋め込みウエル領域は前記比較的低電圧20ボルトNチャネル電界効果トランジスタから前記比較的高電圧垂直バイポーラトランジスタを分離することを特徴とする請求項1に記載の構造。
- 前記エピタキシャル層の前記上側面の第1、第2及び第3表面領域であって、互いに横方向に隔てられた該第1、第2及び第3表面領域の間の前記ウエル領域の上に配置されたフィールド酸化膜と、
前記第1表面領域で前記エピタキシャル層の前記上側面から前記ウエル領域内に下向きに延出するコレクタ接触領域であって、前記第1導電型の半導体材料よりなる該コレクタ接触領域と、
前記第3表面領域で前記エピタキシャル層の前記上側面から前記エピタキシャル層内に下向きに延出するベース接触領域であって、前記第2導電型の半導体材料よりなる該ベース接触領域と、
前記第2導電型の半導体材料よりなる第1フィールド注入領域であって、前記第2表面領域と前記第3表面領域の間で前記フィールド酸化膜の下に配置され、前記ベース接触領域に接触する該第1フィールド注入領域と、
前記第2表面領域で前記エピタキシャル層の前記上側面から前記エピタキシャル層内に下向きに延出したエミッタ領域であって、前記第1導電型の半導体材料よりなる該エミッタ領域と、
前記エミッタ領域の下に配置され、前記第2導電型の半導体材料よりなり、前記第1フィールド注入領域に接触する薄いベース領域とをさらに有することを特徴とする請求項1又は2又は3に記載の構造。 - 前記フィールド酸化膜の下に配置され、前記第1、第2及び第3表面領域を事実上囲繞する環状部を形成する第2フィールド注入領域をさらに有することを特徴とする請求項7に記載の構造。
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- 1993-03-05 US US08/026,930 patent/US5422508A/en not_active Expired - Lifetime
- 1993-09-17 JP JP5254786A patent/JPH077094A/ja active Pending
- 1993-09-21 EP EP01107551A patent/EP1119044A1/en not_active Withdrawn
- 1993-09-21 DE DE69332753T patent/DE69332753T2/de not_active Expired - Lifetime
- 1993-09-21 DE DE69332097T patent/DE69332097T2/de not_active Expired - Lifetime
- 1993-09-21 DE DE69332847T patent/DE69332847T2/de not_active Expired - Lifetime
- 1993-09-21 EP EP01107549A patent/EP1119036B1/en not_active Expired - Lifetime
- 1993-09-21 DE DE69333825T patent/DE69333825T2/de not_active Expired - Lifetime
- 1993-09-21 EP EP01107548A patent/EP1119051B1/en not_active Expired - Lifetime
- 1993-09-21 EP EP01107552A patent/EP1119050B1/en not_active Expired - Lifetime
- 1993-09-21 EP EP93307457A patent/EP0589675B1/en not_active Expired - Lifetime
- 1993-09-21 EP EP01107550.4A patent/EP1119043B1/en not_active Expired - Lifetime
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1994
- 1994-04-08 US US08/225,270 patent/US5416039A/en not_active Expired - Lifetime
- 1994-04-11 US US08/226,419 patent/US5426328A/en not_active Expired - Lifetime
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1996
- 1996-08-29 US US08/705,910 patent/US5751054A/en not_active Expired - Lifetime
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2003
- 2003-06-03 JP JP2003158265A patent/JP2004072077A/ja active Pending
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2007
- 2007-07-23 JP JP2007190383A patent/JP4805882B2/ja active Active
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2010
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014523139A (ja) * | 2011-07-08 | 2014-09-08 | エルジー シルトロン インコーポレイテッド | ウェハーの欠陥評価方法 |
US9500694B2 (en) | 2011-07-08 | 2016-11-22 | Lg Siltron Inc. | Method for evaluating wafer defects |
Also Published As
Publication number | Publication date |
---|---|
DE69332097D1 (de) | 2002-08-14 |
EP0589675A3 (en) | 1994-11-17 |
EP1119050B1 (en) | 2003-03-05 |
EP1119044A1 (en) | 2001-07-25 |
JP2007335881A (ja) | 2007-12-27 |
EP1119051B1 (en) | 2005-06-01 |
EP0589675B1 (en) | 2002-07-10 |
JP2004072077A (ja) | 2004-03-04 |
EP1119036A1 (en) | 2001-07-25 |
US5416039A (en) | 1995-05-16 |
JP4805882B2 (ja) | 2011-11-02 |
DE69333825T2 (de) | 2006-05-04 |
EP0589675A2 (en) | 1994-03-30 |
EP1119043A3 (en) | 2005-07-13 |
DE69332753T2 (de) | 2003-08-21 |
DE69332847T2 (de) | 2003-11-13 |
DE69332097T2 (de) | 2002-12-19 |
EP1119036B1 (en) | 2003-04-02 |
DE69332753D1 (de) | 2003-04-10 |
EP1119043B1 (en) | 2013-06-19 |
EP1119050A1 (en) | 2001-07-25 |
US5422508A (en) | 1995-06-06 |
EP1119043A2 (en) | 2001-07-25 |
DE69333825D1 (de) | 2005-07-07 |
EP1119051A1 (en) | 2001-07-25 |
JPH077094A (ja) | 1995-01-10 |
DE69332847D1 (de) | 2003-05-08 |
US5374569A (en) | 1994-12-20 |
US5426328A (en) | 1995-06-20 |
US5751054A (en) | 1998-05-12 |
JP2007335882A (ja) | 2007-12-27 |
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