JP2010157692A5 - - Google Patents

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Publication number
JP2010157692A5
JP2010157692A5 JP2009264005A JP2009264005A JP2010157692A5 JP 2010157692 A5 JP2010157692 A5 JP 2010157692A5 JP 2009264005 A JP2009264005 A JP 2009264005A JP 2009264005 A JP2009264005 A JP 2009264005A JP 2010157692 A5 JP2010157692 A5 JP 2010157692A5
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light emitting
semiconductor layer
layer
substrate
conductive type
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JP2009264005A
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Japanese (ja)
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JP5641725B2 (ja
JP2010157692A (ja
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JP2009264005A 2008-12-31 2009-11-19 複数の非極性発光セルを有する発光素子及びその製造方法 Expired - Fee Related JP5641725B2 (ja)

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KR1020080138238A KR101533817B1 (ko) 2008-12-31 2008-12-31 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR10-2008-0138238 2008-12-31

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JP2010157692A JP2010157692A (ja) 2010-07-15
JP2010157692A5 true JP2010157692A5 (enExample) 2012-12-06
JP5641725B2 JP5641725B2 (ja) 2014-12-17

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JP2009264005A Expired - Fee Related JP5641725B2 (ja) 2008-12-31 2009-11-19 複数の非極性発光セルを有する発光素子及びその製造方法
JP2014096268A Withdrawn JP2014140084A (ja) 2008-12-31 2014-05-07 複数の非極性発光セルを有する発光素子及びその製造方法

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US (3) US8211724B2 (enExample)
JP (2) JP5641725B2 (enExample)
KR (1) KR101533817B1 (enExample)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8698184B2 (en) * 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
US9443903B2 (en) 2006-06-30 2016-09-13 Cree, Inc. Low temperature high strength metal stack for die attachment
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
KR101017395B1 (ko) * 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101533817B1 (ko) 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101557362B1 (ko) 2008-12-31 2015-10-08 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
US7923739B2 (en) 2009-06-05 2011-04-12 Cree, Inc. Solid state lighting device
US8598602B2 (en) * 2009-01-12 2013-12-03 Cree, Inc. Light emitting device packages with improved heat transfer
US8686445B1 (en) 2009-06-05 2014-04-01 Cree, Inc. Solid state lighting devices and methods
US8860043B2 (en) 2009-06-05 2014-10-14 Cree, Inc. Light emitting device packages, systems and methods
US9111778B2 (en) 2009-06-05 2015-08-18 Cree, Inc. Light emitting diode (LED) devices, systems, and methods
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US8071401B2 (en) * 2009-12-10 2011-12-06 Walsin Lihwa Corporation Method of forming vertical structure light emitting diode with heat exhaustion structure
US8648359B2 (en) 2010-06-28 2014-02-11 Cree, Inc. Light emitting devices and methods
US8269244B2 (en) 2010-06-28 2012-09-18 Cree, Inc. LED package with efficient, isolated thermal path
USD643819S1 (en) 2010-07-16 2011-08-23 Cree, Inc. Package for light emitting diode (LED) lighting
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101138952B1 (ko) * 2010-09-24 2012-04-25 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
DE102010048159B4 (de) 2010-10-11 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
US11101408B2 (en) 2011-02-07 2021-08-24 Creeled, Inc. Components and methods for light emitting diode (LED) lighting
US8610140B2 (en) 2010-12-15 2013-12-17 Cree, Inc. Light emitting diode (LED) packages, systems, devices and related methods
USD679842S1 (en) 2011-01-03 2013-04-09 Cree, Inc. High brightness LED package
US8536594B2 (en) * 2011-01-28 2013-09-17 Micron Technology, Inc. Solid state lighting devices with reduced dimensions and methods of manufacturing
TW201251140A (en) 2011-01-31 2012-12-16 Cree Inc High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion
DE102011013821B4 (de) 2011-03-14 2024-05-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips
JP2012195435A (ja) * 2011-03-16 2012-10-11 Stanley Electric Co Ltd 半導体発光素子の製造方法
US8241932B1 (en) * 2011-03-17 2012-08-14 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode packages
US9236530B2 (en) 2011-04-01 2016-01-12 Soraa, Inc. Miscut bulk substrates
US20120261686A1 (en) * 2011-04-12 2012-10-18 Lu Chi Wei Light-emitting element and the manufacturing method thereof
US8592847B2 (en) * 2011-04-15 2013-11-26 Epistar Corporation Light-emitting device
JP4989773B1 (ja) 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
KR101799451B1 (ko) * 2011-06-02 2017-11-20 엘지이노텍 주식회사 발광 소자
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
WO2013008380A1 (ja) 2011-07-14 2013-01-17 パナソニック株式会社 窒化物系半導体発光素子
TW201310703A (zh) * 2011-08-17 2013-03-01 Ritedia Corp 垂直式發光二極體結構及其製備方法
KR20130021296A (ko) * 2011-08-22 2013-03-05 엘지이노텍 주식회사 발광소자, 발광소자 패키지, 및 라이트 유닛
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9646827B1 (en) * 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
KR101634369B1 (ko) * 2011-12-27 2016-06-28 서울바이오시스 주식회사 복수개의 발광셀들을 갖는 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR102022659B1 (ko) * 2012-02-20 2019-11-04 서울바이오시스 주식회사 고효율 발광 다이오드 및 그것을 제조하는 방법
JP5992695B2 (ja) * 2012-02-29 2016-09-14 スタンレー電気株式会社 半導体発光素子アレイ及び車両用灯具
FR2992465B1 (fr) * 2012-06-22 2015-03-20 Soitec Silicon On Insulator Procede de fabrication collective de leds et structure pour la fabrication collective de leds
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
CN103681723A (zh) * 2012-08-30 2014-03-26 旭明光电股份有限公司 发光二极管
DE102012109460B4 (de) 2012-10-04 2024-03-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display
JP2014096455A (ja) * 2012-11-08 2014-05-22 Stanley Electric Co Ltd 半導体発光素子アレイおよび車両用灯具
US20140151630A1 (en) * 2012-12-04 2014-06-05 Feng-Hsu Fan Protection for the epitaxial structure of metal devices
KR20140073351A (ko) 2012-12-06 2014-06-16 엘지이노텍 주식회사 발광 소자
TWI499091B (zh) * 2012-12-18 2015-09-01 新世紀光電股份有限公司 發光裝置
TWI570955B (zh) 2013-01-10 2017-02-11 晶元光電股份有限公司 發光元件
KR101423717B1 (ko) * 2013-02-08 2014-08-01 서울바이오시스 주식회사 복수개의 발광셀들을 갖는 발광 다이오드 패키지 및 그것을 제조하는 방법
US9761774B2 (en) * 2014-12-16 2017-09-12 Epistar Corporation Light-emitting element with protective cushioning
FR3011380B1 (fr) * 2013-09-30 2017-01-13 Aledia Dispositif optoelectronique a diodes electroluminescentes
US10910350B2 (en) * 2014-05-24 2021-02-02 Hiphoton Co., Ltd. Structure of a semiconductor array
DE102014116079A1 (de) * 2014-11-04 2016-05-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
CN105762245A (zh) * 2014-12-18 2016-07-13 晶能光电（江西）有限公司 一种具有高出光效率的led芯片及其制备方法
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
DE102015105438A1 (de) * 2015-04-09 2016-10-13 M2K-Laser Gmbh Monolithische Diodenlaseranordnung
TWI581460B (zh) * 2015-09-04 2017-05-01 錼創科技股份有限公司 發光元件及其製作方法
JP6637703B2 (ja) * 2015-09-10 2020-01-29 アルパッド株式会社 半導体発光装置
JP2017112203A (ja) * 2015-12-16 2017-06-22 シャープ株式会社 半導体発光素子
KR102263041B1 (ko) 2016-02-26 2021-06-09 삼성전자주식회사 멀티 컬러를 구현할 수 있는 발광 소자
CN105702821B (zh) * 2016-03-29 2018-01-30 苏州晶湛半导体有限公司 半导体发光器件及其制造方法
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
US11177417B2 (en) * 2017-02-13 2021-11-16 Nichia Corporation Light emitting device including phosphor layer with protrusions and recesses and method for manufacturing same
JP6645486B2 (ja) 2017-02-13 2020-02-14 日亜化学工業株式会社 発光装置およびその製造方法
KR102385571B1 (ko) 2017-03-31 2022-04-12 삼성전자주식회사 반도체 발광 소자
JP6597837B2 (ja) * 2017-06-30 2019-10-30 日亜化学工業株式会社 発光装置及びその製造方法
KR102370621B1 (ko) * 2017-08-24 2022-03-04 삼성전자주식회사 발광 패키지 및 이를 포함하는 발광 모듈
KR101930006B1 (ko) * 2017-09-26 2018-12-17 에피스타 코포레이션 발광소자
US10797029B2 (en) 2017-12-19 2020-10-06 PlayNitride Inc. Structure with micro device
US10804130B2 (en) 2017-12-19 2020-10-13 PlayNitride Inc. Structure with micro device
US10403799B1 (en) * 2017-12-19 2019-09-03 PlayNitride Inc. Structure with micro device
TWI660448B (zh) 2017-12-19 2019-05-21 英屬開曼群島商錼創科技股份有限公司 微型元件結構
US11469138B2 (en) 2018-05-04 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Via for coupling attached component upper electrode to substrate
US11282984B2 (en) * 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
US11967605B2 (en) * 2018-11-13 2024-04-23 Seoul Viosys Co., Ltd. Light emitting device
TWI685096B (zh) * 2018-11-21 2020-02-11 瑩耀科技股份有限公司 多層堆疊補隙發光半導體結構及其製作方法
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
CN111987083A (zh) * 2019-05-23 2020-11-24 群创光电股份有限公司 电子装置以及发光单元
WO2021087109A1 (en) 2019-10-29 2021-05-06 Cree, Inc. Texturing for high density pixelated-led chips
KR102447407B1 (ko) * 2020-11-12 2022-09-27 주식회사 에스엘바이오닉스 반도체 발광소자

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
JP3822545B2 (ja) 2002-04-12 2006-09-20 士郎 酒井 発光装置
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
DE10228103A1 (de) 2002-06-24 2004-01-15 Bayer Cropscience Ag Fungizide Wirkstoffkombinationen
KR100697803B1 (ko) 2002-08-29 2007-03-20 시로 사카이 복수의 발광 소자를 갖는 발광 장치
JP4572597B2 (ja) * 2003-06-20 2010-11-04 日亜化学工業株式会社 窒化物半導体素子
JP2007529105A (ja) * 2003-07-16 2007-10-18 松下電器産業株式会社 半導体発光装置とその製造方法、照明装置および表示装置
JP4449405B2 (ja) * 2003-10-20 2010-04-14 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法
JP2008523637A (ja) 2004-12-14 2008-07-03 ソウル オプト−デバイス カンパニー リミテッド 複数の発光セルを有する発光素子及びそれを搭載したパッケージ
TWI374553B (en) * 2004-12-22 2012-10-11 Panasonic Corp Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
TWI244228B (en) * 2005-02-03 2005-11-21 United Epitaxy Co Ltd Light emitting device and manufacture method thereof
JP5008263B2 (ja) * 2005-03-02 2012-08-22 日亜化学工業株式会社 半導体発光素子
EP2280430B1 (en) 2005-03-11 2020-01-01 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
KR100599012B1 (ko) 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
US7930013B2 (en) 2005-06-29 2011-04-19 Compumedics Limited Sensor assembly with conductive bridge
DE112006002927B4 (de) * 2006-01-09 2010-06-02 Seoul Opto Device Co. Ltd., Ansan Licht emittierende Diode mit ITO-Schicht und Verfahren zur Herstellung einer solchen
KR101203138B1 (ko) * 2006-01-12 2012-11-20 서울옵토디바이스주식회사 발광소자와 그 제조방법
JP2007324581A (ja) * 2006-05-01 2007-12-13 Mitsubishi Chemicals Corp 集積型半導体発光装置およびその製造方法
JP5126875B2 (ja) * 2006-08-11 2013-01-23 シャープ株式会社 窒化物半導体発光素子の製造方法
JP4915218B2 (ja) 2006-11-17 2012-04-11 ソニー株式会社 発光ダイオードの製造方法
JP2008141015A (ja) 2006-12-01 2008-06-19 Mitsubishi Cable Ind Ltd 発光ダイオード素子
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9391118B2 (en) * 2007-01-22 2016-07-12 Cree, Inc. Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
JP2008186959A (ja) * 2007-01-29 2008-08-14 Toyoda Gosei Co Ltd Ｉｉｉ−ｖ族半導体素子、およびその製造方法
KR100974923B1 (ko) * 2007-03-19 2010-08-10 서울옵토디바이스주식회사 발광 다이오드
DE102007019776A1 (de) 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
KR100838197B1 (ko) 2007-08-10 2008-06-16 서울옵토디바이스주식회사 개선된 전류분산 성능을 갖는 발광 다이오드
KR100889956B1 (ko) 2007-09-27 2009-03-20 서울옵토디바이스주식회사 교류용 발광다이오드
US8368100B2 (en) 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
JP4981005B2 (ja) * 2008-09-12 2012-07-18 ローム株式会社 半導体発光装置
JP5123269B2 (ja) 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR101017394B1 (ko) 2008-09-30 2011-02-28 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
KR20100076083A (ko) 2008-12-17 2010-07-06 서울반도체 주식회사 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법
KR101533817B1 (ko) 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101557362B1 (ko) 2008-12-31 2015-10-08 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101841752B1 (ko) * 2009-11-03 2018-05-04 더 리전트 오브 더 유니버시티 오브 캘리포니아 저온 수용액 내에서 성장한 다중 표면들 상의 산화 아연 층들에 의해 커버되는 고휘도 발광 다이오드

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