JP5641725B2 - 複数の非極性発光セルを有する発光素子及びその製造方法 - Google Patents
複数の非極性発光セルを有する発光素子及びその製造方法 Download PDFInfo
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- JP5641725B2 JP5641725B2 JP2009264005A JP2009264005A JP5641725B2 JP 5641725 B2 JP5641725 B2 JP 5641725B2 JP 2009264005 A JP2009264005 A JP 2009264005A JP 2009264005 A JP2009264005 A JP 2009264005A JP 5641725 B2 JP5641725 B2 JP 5641725B2
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Description
25 第1の導電型半導体層
27 活性層
29 第2の導電型半導体層
30 発光セル
71 絶縁層
73 反射層
75 保護金属層
Claims (14)
- 複数の非極性発光セルを有する発光ダイオードの製造方法であって、
上部表面がc面に対して一定の交差角をなす非極性または半極性の結晶面を有するGaN基板を用意し、
前記基板上に窒化物半導体層を成長させ、
前記窒化物半導体層をパターニングし、互いに分離された発光セルを形成し、前記発光セル間の分離領域の下方から前記基板を部分的に除去してリセス領域を形成し、
前記リセス領域を充填する絶縁層を形成し、
前記絶縁層を露出させるように、前記基板を少なくとも部分的に除去する発光ダイオードの製造方法であって、
前記窒化物半導体層は、第1の導電型半導体層、活性層、第2の導電型半導体層を有することを特徴とする発光ダイオードの製造方法。 - 前記基板を少なくとも部分的に除去した後、前記絶縁層間に露出した前記基板または前記窒化物半導体層の表面に粗面を形成することを特徴とする請求項1に記載の発光ダイオードの製造方法。
- 前記発光セルは、
それぞれ、第1の導電型半導体層と、
前記第1の導電型半導体層の一部領域上に配置される第2の導電型半導体層と、
前記第1の導電型半導体層と第2の導電型半導体層との間に介在された活性層と、を有することを特徴とする請求項1に記載の発光ダイオードの製造方法。 - 前記基板を除去する前に、前記発光セルを電気的に接続する配線を形成することを特徴とする請求項3に記載の発光ダイオードの製造方法。
- 前記配線を形成する前に、前記発光セル上に反射層を形成することを特徴とする請求項4に記載の発光ダイオードの製造方法。
- 前記GaN基板を除去する前に、
前記配線を覆う層間絶縁層を形成し、
前記層間絶縁層上に第2の基板をボンディングすることを特徴とする請求項4に記載の発光ダイオードの製造方法。 - 前記配線を形成する前に、前記発光セルの側面を覆う側面絶縁層を形成することを特徴とする請求項4に記載の発光ダイオードの製造方法。
- 前記リセス領域を充填する絶縁層は、前記発光セルを覆い、前記第1の導電型半導体層の他の領域及び前記第2の導電型半導体層の上部に開口部を有し、
前記基板を除去する前に、
前記絶縁層の開口部を通じて、隣り合う発光セルを電気的に接続するボンディングメタルを形成し、
前記ボンディングメタルに第2の基板をボンディングすることを特徴とする請求項3に記載の発光ダイオードの製造方法。 - 前記ボンディングメタルを形成する前に、前記第2の導電型半導体層上に反射層を形成することを特徴とする請求項8に記載の発光ダイオードの製造方法。
- 前記発光セルは、
それぞれ、第1の導電型半導体層と、
前記第1の導電型半導体層上に配置される第2の導電型半導体層と、
前記第1の導電型半導体層と第2の導電型半導体層との間に介在された活性層と、を有することを特徴とする請求項1に記載の発光ダイオードの製造方法。 - 前記基板を除去する前に、
前記発光セルの第1の導電型半導体層に電気的に接続された電極を形成し、前記電極は、それぞれ、前記リセス領域を充填する絶縁層上に延びたことを特徴とする請求項10に記載の発光ダイオードの製造方法。 - 前記電極を形成する際に、
前記第2の導電型半導体層上に反射層を形成し、
前記反射層を覆い、前記絶縁層上に延びる保護金属層を形成することを特徴とする請求項11に記載の発光ダイオードの製造方法。 - 前記基板を除去する前に、
前記電極を覆う層間絶縁層を形成し、
前記層間絶縁層に第2の基板をボンディングすることを特徴とする請求項11に記載の発光ダイオードの製造方法。 - 前記基板を除去した後、
前記リセス領域を充填する前記絶縁層をパターニングして、前記電極を露出させる開口部を形成し、
隣り合う発光セルを接続する配線を形成し、
前記配線は、それぞれ、その一端部が、前記絶縁層に形成された開口部を通じて、前記電極に電気的に接続されることを特徴とする請求項13に記載の発光ダイオードの製造方法。
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KR1020080138238A KR101533817B1 (ko) | 2008-12-31 | 2008-12-31 | 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
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US8211724B2 (en) | 2012-07-03 |
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