JP6087409B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP6087409B2 JP6087409B2 JP2015189382A JP2015189382A JP6087409B2 JP 6087409 B2 JP6087409 B2 JP 6087409B2 JP 2015189382 A JP2015189382 A JP 2015189382A JP 2015189382 A JP2015189382 A JP 2015189382A JP 6087409 B2 JP6087409 B2 JP 6087409B2
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- 239000010410 layer Substances 0.000 claims description 293
- 239000004065 semiconductor Substances 0.000 claims description 145
- 239000000758 substrate Substances 0.000 claims description 71
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 238000000926 separation method Methods 0.000 claims description 22
- 238000003491 array Methods 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 21
- 238000005530 etching Methods 0.000 description 19
- 238000002955 isolation Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 150000001875 compounds Chemical class 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Description
127:活性層
129:第2の導電型の下部半導体層
130a:ホール
135:コネクタ
151:基板
S1:第1の発光セル
S2:第2の発光セル
Claims (14)
- 基板と、
前記基板上に配置され、それぞれ第1の導電型の上部半導体層、第2の導電型の下部半導体層、前記第1の導電型の上部半導体層と前記第2の導電型の下部半導体層との間に活性層、及び前記第2の導電型の下部半導体層と前記活性層とを貫通して前記第1の導電型の上部半導体層を露出させるホールを有する第1の発光セル及び第2の発光セルを含む複数の発光セルと、
前記第1及び第2の発光セルと基板との間に位置し、前記第1の発光セル及び第2の発光セルを互いに電気的に接続するコネクタと、
前記第1の発光セルと前記第2の発光セルとを分離する分離溝と、
前記分離溝と前記コネクタとの間に介在し、前記第1の発光セル及び前記第2の発光セルの各々の前記ホールの側壁から前記下部半導体層の下面までを連続して覆い、前記下部半導体層の下面を覆う領域において、スルーホールを有する分布ブラッグ反射器を含む第1絶縁層と、
を含み、
前記第1の発光セル及び前記第2の発光セルの各々の前記ホールの側壁に配置された前記第1絶縁層と、前記分布ブラッグ反射器が設けられた前記第1絶縁層と、は同一層であり、
前記第1絶縁層は、前記ホールの側壁において前記活性層及び前記下部半導体層と接し、前記下部半導体層の下面において前記下部半導体層と接し、
前記コネクタは、前記第1の発光セルの前記第2の導電型の下部半導体層と前記第2の発光セルの前記ホール内に露出された前記第1の導電型の上部半導体層とを電気的に接続し、
前記コネクタは、前記第1の発光セルの前記第2の導電型の下部半導体層に、前記スルーホールを介して電気的に接続することを特徴とする発光素子。 - 前記第1の発光セル及び第2の発光セルは、複数のホールを含むことを特徴とする請求項1に記載の発光素子。
- 前記発光セルは、断面形状が傾斜した構造を有することを特徴とする請求項1に記載の発光素子。
- 前記第1及び第2の発光セルそれぞれの第1の導電型の上部半導体層の上部面は、粗面を含むことを特徴とする請求項1に記載の発光素子。
- 前記各発光セルの第2の導電型の下部半導体層に接触するオーミックコンタクト層をさらに含むことを特徴とする請求項1に記載の発光素子。
- 前記コネクタは、前記第1の発光セルの前記オーミックコンタクト層に接続するとともに、前記第2の発光セルの前記オーミックコンタクト層から絶縁されることを特徴とする請求項5に記載の発光素子。
- 前記コネクタと前記第2の発光セルの前記オーミックコンタクト層とを絶縁する第2絶縁層をさらに含むことを特徴とする請求項5に記載の発光素子。
- 前記第2絶縁層は、単一層であることを特徴とする請求項7に記載の発光素子。
- 前記複数の発光セルが各コネクタによって互いに直列に接続された直列アレイをさらに含むことを特徴とする請求項1に記載の発光素子。
- 前記複数の発光セルが接続によって互いに直列に接続された複数の直列アレイをさらに含み、
前記複数の直列アレイが互いに逆並列に接続されていることを特徴とする請求項1に記載の発光素子。 - 前記基板は導電性基板であることを特徴とすることを請求項1に記載の発光素子。
- 前記基板と前記コネクタとの間に介在されたAu/Snのボンディング金属をさらに含むことを特徴とする請求項1に記載の発光素子。
- 前記コネクタと前記ボンディング金属の間に介在された分離絶縁層をさらに含むことを特徴とする請求項12に記載の発光素子。
- 前記コネクタと前記ボンディング金属の間に介在されたCr/Auの接着層をさらに含むことを特徴とする請求項12に記載の発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020090135309A KR101106151B1 (ko) | 2009-12-31 | 2009-12-31 | 발광 소자 및 그것을 제조하는 방법 |
KR10-2009-0135309 | 2009-12-31 |
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JP2013268681A Division JP2014078750A (ja) | 2009-12-31 | 2013-12-26 | 発光素子及びその製造方法 |
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JP2016021591A JP2016021591A (ja) | 2016-02-04 |
JP6087409B2 true JP6087409B2 (ja) | 2017-03-01 |
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JP2010258828A Active JP5766429B2 (ja) | 2009-12-31 | 2010-11-19 | 発光素子及びその製造方法 |
JP2013268681A Withdrawn JP2014078750A (ja) | 2009-12-31 | 2013-12-26 | 発光素子及びその製造方法 |
JP2015189382A Active JP6087409B2 (ja) | 2009-12-31 | 2015-09-28 | 発光素子 |
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JP2010258828A Active JP5766429B2 (ja) | 2009-12-31 | 2010-11-19 | 発光素子及びその製造方法 |
JP2013268681A Withdrawn JP2014078750A (ja) | 2009-12-31 | 2013-12-26 | 発光素子及びその製造方法 |
Country Status (6)
Country | Link |
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US (3) | US8258533B2 (ja) |
EP (2) | EP2341543B1 (ja) |
JP (3) | JP5766429B2 (ja) |
KR (1) | KR101106151B1 (ja) |
CN (1) | CN102117821B (ja) |
TW (2) | TWI445219B (ja) |
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JP5766429B2 (ja) | 2015-08-19 |
US8324650B2 (en) | 2012-12-04 |
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JP2014078750A (ja) | 2014-05-01 |
US8294170B2 (en) | 2012-10-23 |
US20110180820A1 (en) | 2011-07-28 |
EP2455970B1 (en) | 2022-09-14 |
TW201131835A (en) | 2011-09-16 |
CN102117821A (zh) | 2011-07-06 |
JP2016021591A (ja) | 2016-02-04 |
KR101106151B1 (ko) | 2012-01-20 |
US8258533B2 (en) | 2012-09-04 |
TWI445219B (zh) | 2014-07-11 |
TWI538265B (zh) | 2016-06-11 |
US20110156064A1 (en) | 2011-06-30 |
JP2011139038A (ja) | 2011-07-14 |
TW201442305A (zh) | 2014-11-01 |
KR20110078484A (ko) | 2011-07-07 |
EP2455970A1 (en) | 2012-05-23 |
EP2341543A1 (en) | 2011-07-06 |
CN102117821B (zh) | 2013-12-18 |
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