JP2011139038A - 発光素子及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 160
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 44
- 238000000926 separation method Methods 0.000 claims description 25
- 238000002955 isolation Methods 0.000 claims description 17
- 239000010410 layer Substances 0.000 description 260
- 238000005530 etching Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 16
- 150000001875 compounds Chemical class 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910004158 TaO Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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Abstract
【解決手段】基板と、それぞれ第1の導電型の上部半導体層、活性層、第2の導電型の下部半導体層、及び前記第2の導電型の前記下部半導体層と前記活性層とを貫通して前記第1の導電型の前記上部半導体層を露出させるホールを含む第1の発光セル及び第2の発光セルと、前記第1の発光セル及び前記第2の発光セルと前記基板との間に位置し、前記第1の発光セル及び前記第2の発光セルを互いに電気的に接続するコネクタと、を含み、前記第1の発光セルの前記ホール及び前記第2の発光セルの前記ホールは、それぞれ前記第1の発光セル及び前記第2の発光セルの中央領域に位置し、前記コネクタは、前記第1の発光セルの前記第2の導電型の前記下部半導体層と、前記第2の発光セルの前記ホール内に露出された前記第1の導電型の前記上部半導体層とを電気的に接続していることを特徴とする発光素子。
【選択図】図6
Description
127:活性層
129:第2の導電型の下部半導体層
130a:ホール
135:コネクタ
151:基板
S1:第1の発光セル
S2:第2の発光セル
Claims (22)
- 基板と、
それぞれ第1の導電型の上部半導体層、活性層、第2の導電型の下部半導体層、及び前記第2の導電型の前記下部半導体層と前記活性層とを貫通して前記第1の導電型の前記上部半導体層を露出させるホールを含む第1の発光セル及び第2の発光セルと、
前記第1の発光セル及び前記第2の発光セルと前記基板との間に位置し、前記第1の発光セル及び前記第2の発光セルを互いに電気的に接続するコネクタと、を含み、
前記第1の発光セルの前記ホール及び前記第2の発光セルの前記ホールは、それぞれ前記第1の発光セル及び前記第2の発光セルの中央領域に位置し、
前記コネクタは、前記第1の発光セルの前記第2の導電型の前記下部半導体層と、前記第2の発光セルの前記ホール内に露出された前記第1の導電型の前記上部半導体層とを電気的に接続している
ことを特徴とする発光素子。 - 前記各発光セルを分離する分離溝と、
前記分離溝と前記コネクタとの間に介在した絶縁層と
をさらに含むことを特徴とする請求項1に記載の発光素子。 - 前記絶縁層は分布ブラッグ反射器を含むことを特徴とする請求項2に記載の発光素子。
- 前記分離溝は、前記第1の導電型の前記上部半導体層、前記活性層及び前記第2の導電型の前記下部半導体層を貫通することを特徴とする請求項2に記載の発光素子。
- 前記各ホールの側壁を覆う絶縁層をさらに含むことを特徴とする請求項1に記載の発光素子。
- 前記絶縁層は分布ブラッグ反射器を含むことを特徴とする請求項5に記載の発光素子。
- 前記各発光セルの第2の導電型の下部半導体層に接触するオーミックコンタクト層をさらに含み、
前記コネクタは、前記第1の発光セルの前記オーミックコンタクト層に接続するとともに、前記第2の発光セルの前記オーミックコンタクト層から絶縁されることを特徴とする請求項1に記載の発光素子。 - 前記第2の発光セルのオーミックコンタクト層と前記コネクタとの間に介在した絶縁層をさらに含むことを特徴とする請求項7に記載の発光素子。
- 前記オーミックコンタクト層と前記第2の導電型の下部半導体層との間に介在した分布ブラッグ反射器をさらに含み、
前記分布ブラッグ反射器は各スルーホールを有し、
前記オーミックコンタクト層は、前記各スルーホールを介して前記第2の導電型の下部半導体層に接続されることを特徴とする請求項7に記載の発光素子。 - 前記コネクタと前記基板との間に介在した分離絶縁層をさらに含むことを特徴とする請求項1に記載の発光素子。
- 前記第1の発光セルは、前記ホールを複数含むことを特徴とする請求項1に記載の発光素子。
- 基板と、
第1の導電型の上部半導体層、活性層及び第2の導電型の下部半導体層を含むとともに、前記第2の導電型の前記下部半導体層及び前記活性層を貫通して前記第1の導電型の前記上部半導体層を露出させるホールを含む第1の発光セルと、
前記ホールを介して前記第1の導電型の前記上部半導体層に電気的に接続された第1のコネクタと、
前記第2の導電型の前記下部半導体層に電気的に接続された第2のコネクタと、を含み、
前記ホールは前記第1の発光セルの中央領域に位置し、
前記第1のコネクタは、前記第2の導電型の前記下部半導体層から電気的に絶縁されることを特徴とする発光素子。 - 前記ホールの側壁に形成された絶縁層をさらに含み、
前記絶縁層は分布ブラッグ反射器を含むことを特徴とする請求項12に記載の発光素子。 - 前記第2の導電型の前記下部半導体層に接触するオーミックコンタクト層をさらに含み、
前記第2のコネクタは前記オーミックコンタクト層に接続されることを特徴とする請求項12に記載の発光素子。 - 前記オーミックコンタクト層は反射金属層を含むことを特徴とする請求項14に記載の発光素子。
- 前記第1のコネクタと前記オーミックコンタクト層との間に介在した絶縁層をさらに含むことを特徴とする請求項14に記載の発光素子。
- 前記絶縁層は分布ブラッグ反射器を含むことを特徴とする請求項16に記載の発光素子。
- 第1の導電型の上部半導体層、活性層及び第2の導電型の下部半導体層を含む第2の発光セルをさらに含み、
前記第2のコネクタは、前記第2の発光セルの第1の導電型の上部半導体層に電気的に接続されることを特徴とする請求項12に記載の発光素子。 - 前記第2の発光セルは、前記第2の導電型の前記下部半導体層及び前記活性層を貫通して前記第1の導電型の前記上部半導体層を露出させるホールを含み、
前記第2のコネクタは、前記ホールを介して前記第2の発光セルの前記第1の導電型の上部半導体層に電気的に接続されることを特徴とする請求項18に記載の発光素子。 - 前記第1及び第2の発光セルは分離溝によって互いに分離され、
前記分離溝と前記第2のコネクタとの間に絶縁層が介在することを特徴とする請求項18に記載の発光素子。 - 前記分離溝と前記第2のコネクタとの間に介在する前記絶縁層は分布ブラッグ反射器を含むことを特徴とする請求項20に記載の発光素子。
- 前記第1の発光セルは、前記ホールを複数含むことを特徴とする請求項12に記載の発光素子。
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Cited By (15)
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JP2013098561A (ja) * | 2011-10-28 | 2013-05-20 | Lg Innotek Co Ltd | 発光素子 |
JP2013098562A (ja) * | 2011-10-28 | 2013-05-20 | Lg Innotek Co Ltd | 発光素子及び発光素子パッケージ |
JP2014086572A (ja) * | 2012-10-24 | 2014-05-12 | Nichia Chem Ind Ltd | 半導体発光素子 |
JP2014513420A (ja) * | 2011-04-07 | 2014-05-29 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体チップ |
JP2014524665A (ja) * | 2011-08-15 | 2014-09-22 | マイクロン テクノロジー, インク. | 高電圧固体変換器ならびに関連システムおよび方法 |
JP2015501085A (ja) * | 2011-12-22 | 2015-01-08 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 表示装置および表示装置の製造方法 |
JP2015177031A (ja) * | 2014-03-14 | 2015-10-05 | スタンレー電気株式会社 | 発光装置 |
US9196807B2 (en) | 2012-10-24 | 2015-11-24 | Nichia Corporation | Light emitting element |
JP2015536044A (ja) * | 2012-09-27 | 2015-12-17 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 半導体層の領域の分割方法およびオプトエレクトロニクス半導体チップ |
JP2016513876A (ja) * | 2013-03-15 | 2016-05-16 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 表示装置 |
JP2017059645A (ja) * | 2015-09-15 | 2017-03-23 | 株式会社東芝 | 半導体発光素子 |
US9972657B2 (en) | 2014-08-07 | 2018-05-15 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element |
JP2021019162A (ja) * | 2019-07-23 | 2021-02-15 | 株式会社ディスコ | 光デバイスの移設方法 |
JP2021510234A (ja) * | 2018-11-13 | 2021-04-15 | 廈門市三安光電科技有限公司Xiamen San’An Optoelectronics Technology Co., Ltd. | 発光ダイオード |
JP2021535584A (ja) * | 2018-10-11 | 2021-12-16 | 廈門市三安光電科技有限公司Xiamen San’An Optoelectronics Technology Co., Ltd. | 発光ダイオードデバイス及びその製作方法 |
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US20120007044A1 (en) | 2012-01-12 |
US8258533B2 (en) | 2012-09-04 |
JP6087409B2 (ja) | 2017-03-01 |
KR20110078484A (ko) | 2011-07-07 |
US8324650B2 (en) | 2012-12-04 |
EP2455970B1 (en) | 2022-09-14 |
EP2341543A1 (en) | 2011-07-06 |
US8294170B2 (en) | 2012-10-23 |
JP2016021591A (ja) | 2016-02-04 |
JP5766429B2 (ja) | 2015-08-19 |
EP2341543B1 (en) | 2014-02-12 |
CN102117821B (zh) | 2013-12-18 |
US20110156064A1 (en) | 2011-06-30 |
TWI445219B (zh) | 2014-07-11 |
CN102117821A (zh) | 2011-07-06 |
TW201131835A (en) | 2011-09-16 |
US20110180820A1 (en) | 2011-07-28 |
EP2455970A1 (en) | 2012-05-23 |
TWI538265B (zh) | 2016-06-11 |
JP2014078750A (ja) | 2014-05-01 |
KR101106151B1 (ko) | 2012-01-20 |
TW201442305A (zh) | 2014-11-01 |
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