JP2015536044A - 半導体層の領域の分割方法およびオプトエレクトロニクス半導体チップ - Google Patents
半導体層の領域の分割方法およびオプトエレクトロニクス半導体チップ Download PDFInfo
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- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 9
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- 230000003287 optical effect Effects 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- -1 GaInN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003363 ZnMgO Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
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- 230000001419 dependent effect Effects 0.000 description 1
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
- Dicing (AREA)
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Abstract
Description
2 半導体層
3 第1半導体層
4 第2半導体層
5 活性領域
10 第1マスク要素
12 第2マスク要素
13 第1距離
14 第2距離
15 切欠き部
16 分割溝
17 第1境界面
18 第2境界面
20 キャリア
21 半導体チップ
22 縁部領域
23 中央領域
24 縁部領域
30 マスク領域
40 第1開口部
41 第2開口部
42 縁部
Claims (14)
- 光を発生させる活性領域(5)を有する半導体層(2)の領域を分割し、かつ、前記半導体層(2)の上面側に光取出し構造(15)を導入する方法であって、
前記半導体層(2)から光を取り出すために前記光取出し構造(15)を設け、
前記半導体層(2)の前記上面側をマスク(1)で被覆し、
前記マスク(1)は、前記光取出し構造(15)を導入するための第1開口部(40)を有し、
前記マスク(1)は、少なくとも1つの第2開口部(41)を有し、
前記半導体層(2)の領域の周囲に分割溝(16)を導入するために前記第2開口部(41)を設け、
エッチングによって前記第1開口部(40)を介して前記半導体層(2)の前記上面側に同時に前記光取出し構造(15)を導入し、
前記分割溝(16)が前記第2開口部(41)の領域に前記半導体層(2)の厚さ方向全体に亘って同時に導入され、それにより前記半導体層(2)の領域が分割されるようなサイズの前記第2開口部(41)を選択する方法。 - 前記半導体層(2)の前記分割された領域は、平滑な粗面化されていない縁部(22)によって囲まれる粗面化された中央領域(23)を有する、
請求項1に記載の方法。 - 前記第1開口部(40)および前記第2開口部(41)の前記領域の厚さが略同一のマスク(1,10,12)が使用される、
請求項1または2に記載の方法。 - 前記マスク(1)としてハードマスクが使用される、
請求項1〜3のいずれか一項に記載の方法。 - 前記ハードマスクは、レジストマスクである、
請求項4に記載の方法。 - エッチャントとしてガス状または液体のエッチング媒体が使用される、
請求項1〜5のいずれか一項に記載の方法。 - 前記エッチングは、乾式エッチングである、
請求項1〜6のいずれか一項に記載の方法。 - 前記乾式エッチングにおいてプラズマが使用される、
請求項7に記載の方法。 - 前記半導体層(2)は、少なくとも前記上面側にエピタキシャルに形成した層を含む、
請求項1〜8のいずれか一項に記載の方法。 - 前記半導体層(2)は、少なくとも1層のGaN層を含む、
請求項1〜9のいずれか一項に記載の方法。 - 前記マスク(1,10,12)は除去され、
前記半導体層の前記上面側の前記マスクに被覆されていた前記領域にも、さらなるエッチングステップにおいてエッチングにより前記光取出し構造(15)が形成される、
請求項1〜10のいずれか一項に記載の方法。 - 前記半導体層(2)の前記分割された領域は、半導体チップ(21)、特にLED半導体チップを構成する、
請求項1〜11のいずれか一項に記載の方法。 - 光を発生させる活性領域(5)を有する半導体層(2)と、
光を取り出すための光取出し構造(15,23)と、
エッチングで形成された外周縁部領域(24)と、
を有するオプトエレクトロニクス半導体チップであって、
前記光取出し構造および前記外周縁部領域(24)は、請求項1〜12のいずれか一項に記載の方法によって形成される、
オプトエレクトロニクス半導体チップ。 - 中央領域(23)は、粗面化された前記光取出し構造(15)を有し、
前記中央領域(23)は、粗面化されていない縁部領域(22)によって囲まれる、
請求項13に記載の半導体チップ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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DE102012217524.5 | 2012-09-27 | ||
DE102012217524 | 2012-09-27 | ||
DE201210220909 DE102012220909A1 (de) | 2012-09-27 | 2012-11-15 | Verfahren zum Vereinzeln von Bereichen einer Halbleiterschicht |
DE102012220909.3 | 2012-11-15 | ||
PCT/EP2013/070042 WO2014049038A1 (de) | 2012-09-27 | 2013-09-26 | Verfahren zum vereinzeln von bereichen einer halbleiterschicht |
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JP2015536044A true JP2015536044A (ja) | 2015-12-17 |
JP6177333B2 JP6177333B2 (ja) | 2017-08-09 |
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Country Status (6)
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US (2) | US9589943B2 (ja) |
JP (1) | JP6177333B2 (ja) |
KR (1) | KR20150058247A (ja) |
CN (2) | CN107731806A (ja) |
DE (2) | DE102012220909A1 (ja) |
WO (1) | WO2014049038A1 (ja) |
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DE102012102114B4 (de) * | 2012-03-13 | 2021-09-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Halbleiterbauteil, Beleuchtungsvorrichtung und Anzeigevorrichtung |
DE102012220909A1 (de) * | 2012-09-27 | 2014-05-15 | Osram Opto Semiconductors Gmbh | Verfahren zum Vereinzeln von Bereichen einer Halbleiterschicht |
CN105679756B (zh) * | 2015-11-25 | 2018-08-10 | 杭州立昂微电子股份有限公司 | 一种半导体器件顶层金属的终端结构及其制造方法 |
DE102016103358A1 (de) * | 2016-02-25 | 2017-08-31 | Osram Opto Semiconductors Gmbh | Laserbarren mit gräben |
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2012
- 2012-11-15 DE DE201210220909 patent/DE102012220909A1/de not_active Withdrawn
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2013
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- 2013-09-26 US US14/430,872 patent/US9589943B2/en active Active
- 2013-09-26 WO PCT/EP2013/070042 patent/WO2014049038A1/de active Application Filing
- 2013-09-26 DE DE112013004761.6T patent/DE112013004761B4/de active Active
- 2013-09-26 CN CN201710946421.7A patent/CN107731806A/zh active Pending
- 2013-09-26 CN CN201380050875.6A patent/CN104685643B/zh active Active
- 2013-09-26 KR KR1020157007470A patent/KR20150058247A/ko not_active Application Discontinuation
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2017
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Publication number | Publication date |
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US20170133555A1 (en) | 2017-05-11 |
WO2014049038A1 (de) | 2014-04-03 |
DE102012220909A1 (de) | 2014-05-15 |
DE112013004761A5 (de) | 2015-08-13 |
US9589943B2 (en) | 2017-03-07 |
US9865776B2 (en) | 2018-01-09 |
KR20150058247A (ko) | 2015-05-28 |
CN104685643A (zh) | 2015-06-03 |
US20150287880A1 (en) | 2015-10-08 |
CN104685643B (zh) | 2017-10-17 |
JP6177333B2 (ja) | 2017-08-09 |
CN107731806A (zh) | 2018-02-23 |
DE112013004761B4 (de) | 2022-01-05 |
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