KR101533817B1 - 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 - Google Patents

복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 Download PDF

Info

Publication number
KR101533817B1
KR101533817B1 KR1020080138238A KR20080138238A KR101533817B1 KR 101533817 B1 KR101533817 B1 KR 101533817B1 KR 1020080138238 A KR1020080138238 A KR 1020080138238A KR 20080138238 A KR20080138238 A KR 20080138238A KR 101533817 B1 KR101533817 B1 KR 101533817B1
Authority
KR
South Korea
Prior art keywords
light emitting
substrate
emitting cells
layer
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080138238A
Other languages
English (en)
Korean (ko)
Other versions
KR20100079693A (ko
Inventor
김광중
서원철
김대원
갈대성
예경희
Original Assignee
서울바이오시스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Priority to KR1020080138238A priority Critical patent/KR101533817B1/ko
Priority to JP2009264005A priority patent/JP5641725B2/ja
Priority to US12/623,990 priority patent/US8211724B2/en
Publication of KR20100079693A publication Critical patent/KR20100079693A/ko
Priority to US13/482,851 priority patent/US8436389B2/en
Priority to US13/865,719 priority patent/US8648380B2/en
Priority to JP2014096268A priority patent/JP2014140084A/ja
Application granted granted Critical
Publication of KR101533817B1 publication Critical patent/KR101533817B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
KR1020080138238A 2008-12-31 2008-12-31 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 Expired - Fee Related KR101533817B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020080138238A KR101533817B1 (ko) 2008-12-31 2008-12-31 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
JP2009264005A JP5641725B2 (ja) 2008-12-31 2009-11-19 複数の非極性発光セルを有する発光素子及びその製造方法
US12/623,990 US8211724B2 (en) 2008-12-31 2009-11-23 Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same
US13/482,851 US8436389B2 (en) 2008-12-31 2012-05-29 Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same
US13/865,719 US8648380B2 (en) 2008-12-31 2013-04-18 Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same
JP2014096268A JP2014140084A (ja) 2008-12-31 2014-05-07 複数の非極性発光セルを有する発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080138238A KR101533817B1 (ko) 2008-12-31 2008-12-31 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020130014875A Division KR101457203B1 (ko) 2013-02-12 2013-02-12 복수개의 반도체 적층 구조를 갖는 발광 다이오드
KR1020150038898A Division KR101599529B1 (ko) 2015-03-20 2015-03-20 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법

Publications (2)

Publication Number Publication Date
KR20100079693A KR20100079693A (ko) 2010-07-08
KR101533817B1 true KR101533817B1 (ko) 2015-07-09

Family

ID=42283752

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080138238A Expired - Fee Related KR101533817B1 (ko) 2008-12-31 2008-12-31 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법

Country Status (3)

Country Link
US (3) US8211724B2 (enExample)
JP (2) JP5641725B2 (enExample)
KR (1) KR101533817B1 (enExample)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8698184B2 (en) * 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
US9443903B2 (en) 2006-06-30 2016-09-13 Cree, Inc. Low temperature high strength metal stack for die attachment
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
KR101017395B1 (ko) * 2008-12-24 2011-02-28 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101557362B1 (ko) * 2008-12-31 2015-10-08 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101533817B1 (ko) 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
US7923739B2 (en) * 2009-06-05 2011-04-12 Cree, Inc. Solid state lighting device
US8598602B2 (en) * 2009-01-12 2013-12-03 Cree, Inc. Light emitting device packages with improved heat transfer
US9111778B2 (en) 2009-06-05 2015-08-18 Cree, Inc. Light emitting diode (LED) devices, systems, and methods
US8860043B2 (en) 2009-06-05 2014-10-14 Cree, Inc. Light emitting device packages, systems and methods
US8686445B1 (en) 2009-06-05 2014-04-01 Cree, Inc. Solid state lighting devices and methods
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US8071401B2 (en) * 2009-12-10 2011-12-06 Walsin Lihwa Corporation Method of forming vertical structure light emitting diode with heat exhaustion structure
US8648359B2 (en) 2010-06-28 2014-02-11 Cree, Inc. Light emitting devices and methods
US8269244B2 (en) 2010-06-28 2012-09-18 Cree, Inc. LED package with efficient, isolated thermal path
USD643819S1 (en) 2010-07-16 2011-08-23 Cree, Inc. Package for light emitting diode (LED) lighting
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101138952B1 (ko) * 2010-09-24 2012-04-25 서울옵토디바이스주식회사 복수개의 발광셀들을 갖는 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
DE102010048159B4 (de) 2010-10-11 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
US8610140B2 (en) 2010-12-15 2013-12-17 Cree, Inc. Light emitting diode (LED) packages, systems, devices and related methods
USD679842S1 (en) 2011-01-03 2013-04-09 Cree, Inc. High brightness LED package
US8536594B2 (en) * 2011-01-28 2013-09-17 Micron Technology, Inc. Solid state lighting devices with reduced dimensions and methods of manufacturing
TW201251140A (en) 2011-01-31 2012-12-16 Cree Inc High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion
CN103348496A (zh) 2011-02-07 2013-10-09 克利公司 用于发光二极管（led）发光的部件和方法
DE102011013821B4 (de) 2011-03-14 2024-05-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips
JP2012195435A (ja) * 2011-03-16 2012-10-11 Stanley Electric Co Ltd 半導体発光素子の製造方法
US8241932B1 (en) * 2011-03-17 2012-08-14 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode packages
US9236530B2 (en) 2011-04-01 2016-01-12 Soraa, Inc. Miscut bulk substrates
US20120261686A1 (en) * 2011-04-12 2012-10-18 Lu Chi Wei Light-emitting element and the manufacturing method thereof
US8592847B2 (en) * 2011-04-15 2013-11-26 Epistar Corporation Light-emitting device
JP4989773B1 (ja) 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
KR101799451B1 (ko) * 2011-06-02 2017-11-20 엘지이노텍 주식회사 발광 소자
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
JP5122033B1 (ja) 2011-07-14 2013-01-16 パナソニック株式会社 窒化物系半導体発光素子
TW201310703A (zh) * 2011-08-17 2013-03-01 Ritedia Corp 垂直式發光二極體結構及其製備方法
KR20130021296A (ko) * 2011-08-22 2013-03-05 엘지이노텍 주식회사 발광소자, 발광소자 패키지, 및 라이트 유닛
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9646827B1 (en) * 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
KR101634369B1 (ko) * 2011-12-27 2016-06-28 서울바이오시스 주식회사 복수개의 발광셀들을 갖는 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
KR102022659B1 (ko) * 2012-02-20 2019-11-04 서울바이오시스 주식회사 고효율 발광 다이오드 및 그것을 제조하는 방법
JP5992695B2 (ja) * 2012-02-29 2016-09-14 スタンレー電気株式会社 半導体発光素子アレイ及び車両用灯具
FR2992465B1 (fr) * 2012-06-22 2015-03-20 Soitec Silicon On Insulator Procede de fabrication collective de leds et structure pour la fabrication collective de leds
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US8816383B2 (en) * 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
CN103681723A (zh) * 2012-08-30 2014-03-26 旭明光电股份有限公司 发光二极管
DE102012109460B4 (de) 2012-10-04 2024-03-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display
JP2014096455A (ja) * 2012-11-08 2014-05-22 Stanley Electric Co Ltd 半導体発光素子アレイおよび車両用灯具
US20140151630A1 (en) * 2012-12-04 2014-06-05 Feng-Hsu Fan Protection for the epitaxial structure of metal devices
KR20140073351A (ko) 2012-12-06 2014-06-16 엘지이노텍 주식회사 발광 소자
TWI499091B (zh) * 2012-12-18 2015-09-01 新世紀光電股份有限公司 發光裝置
TWI570955B (zh) 2013-01-10 2017-02-11 晶元光電股份有限公司 發光元件
KR101423717B1 (ko) * 2013-02-08 2014-08-01 서울바이오시스 주식회사 복수개의 발광셀들을 갖는 발광 다이오드 패키지 및 그것을 제조하는 방법
US9761774B2 (en) 2014-12-16 2017-09-12 Epistar Corporation Light-emitting element with protective cushioning
FR3011380B1 (fr) * 2013-09-30 2017-01-13 Aledia Dispositif optoelectronique a diodes electroluminescentes
US10910350B2 (en) * 2014-05-24 2021-02-02 Hiphoton Co., Ltd. Structure of a semiconductor array
DE102014116079A1 (de) * 2014-11-04 2016-05-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
CN105762245A (zh) * 2014-12-18 2016-07-13 晶能光电（江西）有限公司 一种具有高出光效率的led芯片及其制备方法
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
DE102015105438A1 (de) * 2015-04-09 2016-10-13 M2K-Laser Gmbh Monolithische Diodenlaseranordnung
TWI581460B (zh) 2015-09-04 2017-05-01 錼創科技股份有限公司 發光元件及其製作方法
JP6637703B2 (ja) * 2015-09-10 2020-01-29 アルパッド株式会社 半導体発光装置
JP2017112203A (ja) * 2015-12-16 2017-06-22 シャープ株式会社 半導体発光素子
KR102263041B1 (ko) 2016-02-26 2021-06-09 삼성전자주식회사 멀티 컬러를 구현할 수 있는 발광 소자
CN105702821B (zh) * 2016-03-29 2018-01-30 苏州晶湛半导体有限公司 半导体发光器件及其制造方法
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
US10529696B2 (en) 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
JP6645486B2 (ja) 2017-02-13 2020-02-14 日亜化学工業株式会社 発光装置およびその製造方法
US11177417B2 (en) * 2017-02-13 2021-11-16 Nichia Corporation Light emitting device including phosphor layer with protrusions and recesses and method for manufacturing same
KR102385571B1 (ko) 2017-03-31 2022-04-12 삼성전자주식회사 반도체 발광 소자
JP6597837B2 (ja) * 2017-06-30 2019-10-30 日亜化学工業株式会社 発光装置及びその製造方法
KR102370621B1 (ko) * 2017-08-24 2022-03-04 삼성전자주식회사 발광 패키지 및 이를 포함하는 발광 모듈
KR101930006B1 (ko) * 2017-09-26 2018-12-17 에피스타 코포레이션 발광소자
US10403799B1 (en) * 2017-12-19 2019-09-03 PlayNitride Inc. Structure with micro device
US10797029B2 (en) 2017-12-19 2020-10-06 PlayNitride Inc. Structure with micro device
CN109935575B (zh) 2017-12-19 2023-06-13 英属开曼群岛商錼创科技股份有限公司 微型元件结构
US10804130B2 (en) 2017-12-19 2020-10-13 PlayNitride Inc. Structure with micro device
US11469138B2 (en) * 2018-05-04 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Via for coupling attached component upper electrode to substrate
US11282984B2 (en) 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
US11967605B2 (en) 2018-11-13 2024-04-23 Seoul Viosys Co., Ltd. Light emitting device
TWI685096B (zh) * 2018-11-21 2020-02-11 瑩耀科技股份有限公司 多層堆疊補隙發光半導體結構及其製作方法
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
CN111987083A (zh) * 2019-05-23 2020-11-24 群创光电股份有限公司 电子装置以及发光单元
EP4052296A1 (en) 2019-10-29 2022-09-07 Creeled, Inc. Texturing for high density pixelated-led chips
KR102447407B1 (ko) * 2020-11-12 2022-09-27 주식회사 에스엘바이오닉스 반도체 발광소자

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100599012B1 (ko) * 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
KR20070075164A (ko) * 2006-01-12 2007-07-18 서울옵토디바이스주식회사 발광소자와 그 제조방법
KR20080085343A (ko) * 2007-03-19 2008-09-24 서울옵토디바이스주식회사 발광 다이오드

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
JP3822545B2 (ja) 2002-04-12 2006-09-20 士郎 酒井 発光装置
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
DE10228103A1 (de) 2002-06-24 2004-01-15 Bayer Cropscience Ag Fungizide Wirkstoffkombinationen
KR100697803B1 (ko) * 2002-08-29 2007-03-20 시로 사카이 복수의 발광 소자를 갖는 발광 장치
JP4572597B2 (ja) * 2003-06-20 2010-11-04 日亜化学工業株式会社 窒化物半導体素子
WO2005008791A2 (en) * 2003-07-16 2005-01-27 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
JP4449405B2 (ja) * 2003-10-20 2010-04-14 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
JP4995722B2 (ja) * 2004-12-22 2012-08-08 パナソニック株式会社 半導体発光装置、照明モジュール、および照明装置
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
TWI244228B (en) * 2005-02-03 2005-11-21 United Epitaxy Co Ltd Light emitting device and manufacture method thereof
JP5008263B2 (ja) * 2005-03-02 2012-08-22 日亜化学工業株式会社 半導体発光素子
EP1864339A4 (en) * 2005-03-11 2010-12-29 Seoul Semiconductor Co Ltd LED CAPSULATION WITH A GROUP IN A SERIES OF SWITCHED LUMINAIRES
WO2007000020A1 (en) 2005-06-29 2007-01-04 Compumedics Limited Sensor assembly with conductive bridge
JP4861437B2 (ja) * 2006-01-09 2012-01-25 ソウル オプト デバイス カンパニー リミテッド Ｉｔｏ層を有する発光ダイオード及びその製造方法
JP2007324581A (ja) * 2006-05-01 2007-12-13 Mitsubishi Chemicals Corp 集積型半導体発光装置およびその製造方法
JP5126875B2 (ja) * 2006-08-11 2013-01-23 シャープ株式会社 窒化物半導体発光素子の製造方法
JP4915218B2 (ja) 2006-11-17 2012-04-11 ソニー株式会社 発光ダイオードの製造方法
JP2008141015A (ja) 2006-12-01 2008-06-19 Mitsubishi Cable Ind Ltd 発光ダイオード素子
WO2008091837A2 (en) * 2007-01-22 2008-07-31 Cree Led Lighting Solutions, Inc. Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP2008186959A (ja) * 2007-01-29 2008-08-14 Toyoda Gosei Co Ltd Ｉｉｉ−ｖ族半導体素子、およびその製造方法
DE102007019776A1 (de) * 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
KR100838197B1 (ko) 2007-08-10 2008-06-16 서울옵토디바이스주식회사 개선된 전류분산 성능을 갖는 발광 다이오드
KR100889956B1 (ko) * 2007-09-27 2009-03-20 서울옵토디바이스주식회사 교류용 발광다이오드
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
JP4981005B2 (ja) * 2008-09-12 2012-07-18 ローム株式会社 半導体発光装置
KR101017394B1 (ko) 2008-09-30 2011-02-28 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR20100076083A (ko) * 2008-12-17 2010-07-06 서울반도체 주식회사 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법
KR101533817B1 (ko) 2008-12-31 2015-07-09 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101557362B1 (ko) 2008-12-31 2015-10-08 서울바이오시스 주식회사 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101841752B1 (ko) * 2009-11-03 2018-05-04 더 리전트 오브 더 유니버시티 오브 캘리포니아 저온 수용액 내에서 성장한 다중 표면들 상의 산화 아연 층들에 의해 커버되는 고휘도 발광 다이오드

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100599012B1 (ko) * 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
KR20070075164A (ko) * 2006-01-12 2007-07-18 서울옵토디바이스주식회사 발광소자와 그 제조방법
KR20080085343A (ko) * 2007-03-19 2008-09-24 서울옵토디바이스주식회사 발광 다이오드

Also Published As

Publication number Publication date
US8436389B2 (en) 2013-05-07
US20120235158A1 (en) 2012-09-20
JP2010157692A (ja) 2010-07-15
US8211724B2 (en) 2012-07-03
US20100163887A1 (en) 2010-07-01
US8648380B2 (en) 2014-02-11
JP2014140084A (ja) 2014-07-31
US20130228793A1 (en) 2013-09-05
KR20100079693A (ko) 2010-07-08
JP5641725B2 (ja) 2014-12-17

Similar Documents

Publication Publication Date Title
KR101533817B1 (ko) 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101557362B1 (ko) 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
US9337175B2 (en) Light emitting device and method of fabricating the same
US8937327B2 (en) Light emitting device having plurality of light emitting cells and method of fabricating the same
US8232571B2 (en) Light emitting device having plurality of light emitting cells and method of fabricating the same
KR101093117B1 (ko) 교류용 발광 소자 및 그것을 제조하는 방법
KR101587539B1 (ko) 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101423722B1 (ko) 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR20110132160A (ko) 반도체 발광 소자 및 그 제조방법
KR101599529B1 (ko) 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101457203B1 (ko) 복수개의 반도체 적층 구조를 갖는 발광 다이오드
KR101457205B1 (ko) 서로 이격된 반도체층들을 갖는 발광 소자 및 그것을 제조하는 방법
KR20120002819A (ko) 반도체 발광소자 및 반도체 발광소자 패키지
KR101171327B1 (ko) 발광 소자 및 그것을 제조하는 방법
KR101564344B1 (ko) 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101564343B1 (ko) 복수개의 비극성 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법
KR101457206B1 (ko) 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A107 Divisional application of patent
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

A107 Divisional application of patent
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20190325

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210630

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210630

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000