JP2010153765A5 - - Google Patents

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JP2010153765A5
JP2010153765A5 JP2009102521A JP2009102521A JP2010153765A5 JP 2010153765 A5 JP2010153765 A5 JP 2010153765A5 JP 2009102521 A JP2009102521 A JP 2009102521A JP 2009102521 A JP2009102521 A JP 2009102521A JP 2010153765 A5 JP2010153765 A5 JP 2010153765A5
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semiconductor layer
region
thin film
film transistor
gate insulating
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JP2010153765A (ja
JP5436017B2 (ja
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JP2009102521A 2008-04-25 2009-04-21 半導体装置 Active JP5436017B2 (ja)

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JP2009102521A JP5436017B2 (ja) 2008-04-25 2009-04-21 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2008116054 2008-04-25
JP2008116054 2008-04-25
JP2008294074 2008-11-18
JP2008294074 2008-11-18
JP2009102521A JP5436017B2 (ja) 2008-04-25 2009-04-21 半導体装置

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JP2010153765A JP2010153765A (ja) 2010-07-08
JP2010153765A5 true JP2010153765A5 (fr) 2012-03-01
JP5436017B2 JP5436017B2 (ja) 2014-03-05

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JP2009102521A Active JP5436017B2 (ja) 2008-04-25 2009-04-21 半導体装置

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US (1) US8124972B2 (fr)
JP (1) JP5436017B2 (fr)
TW (1) TWI462300B (fr)

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