JP2010151690A5 - - Google Patents
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- JP2010151690A5 JP2010151690A5 JP2008331531A JP2008331531A JP2010151690A5 JP 2010151690 A5 JP2010151690 A5 JP 2010151690A5 JP 2008331531 A JP2008331531 A JP 2008331531A JP 2008331531 A JP2008331531 A JP 2008331531A JP 2010151690 A5 JP2010151690 A5 JP 2010151690A5
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- layer
- light
- gas
- monitoring device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000009792 diffusion process Methods 0.000 claims description 101
- 239000000758 substrate Substances 0.000 claims description 92
- 238000009826 distribution Methods 0.000 claims description 80
- 239000012535 impurity Substances 0.000 claims description 73
- 238000012806 monitoring device Methods 0.000 claims description 54
- 238000012544 monitoring process Methods 0.000 claims description 46
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 38
- 238000002485 combustion reaction Methods 0.000 claims description 34
- 238000003384 imaging method Methods 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 9
- 230000032683 aging Effects 0.000 claims description 8
- 239000000428 dust Substances 0.000 claims description 4
- 239000000446 fuel Substances 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical group [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 120
- 229910052739 hydrogen Inorganic materials 0.000 description 45
- 239000001257 hydrogen Substances 0.000 description 45
- 239000011701 zinc Substances 0.000 description 36
- 230000035945 sensitivity Effects 0.000 description 32
- 239000013307 optical fiber Substances 0.000 description 31
- 150000002431 hydrogen Chemical class 0.000 description 29
- 230000003287 optical effect Effects 0.000 description 22
- 238000010521 absorption reaction Methods 0.000 description 18
- 239000010408 film Substances 0.000 description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 16
- 238000001514 detection method Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 230000002829 reductive effect Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 239000003921 oil Substances 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 230000007423 decrease Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 238000000862 absorption spectrum Methods 0.000 description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 8
- 238000000295 emission spectrum Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- 239000004071 soot Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000002699 waste material Substances 0.000 description 5
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 238000004040 coloring Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 238000004497 NIR spectroscopy Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008331531A JP4743453B2 (ja) | 2008-12-25 | 2008-12-25 | 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置 |
| PCT/JP2009/063581 WO2010073770A1 (ja) | 2008-12-25 | 2009-07-30 | 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置 |
| US13/142,039 US8624189B2 (en) | 2008-12-25 | 2009-07-30 | Gas monitoring device, combustion state monitoring device, secular change monitoring device, and impurity concentration monitoring device |
| CN200980152617.2A CN102265138B (zh) | 2008-12-25 | 2009-07-30 | 气体监测装置、燃烧状态监测装置、长期变化监测装置和杂质浓度监测装置 |
| EP09834576.2A EP2372342A4 (en) | 2008-12-25 | 2009-07-30 | GAS MONITORING DEVICE, COMBUSTION STATUS MONITORING DEVICE, DAY CHANGE MONITORING DEVICE AND UNWIRED MONITORING DEVICE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008331531A JP4743453B2 (ja) | 2008-12-25 | 2008-12-25 | 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011081850A Division JP5402972B2 (ja) | 2011-04-01 | 2011-04-01 | 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010151690A JP2010151690A (ja) | 2010-07-08 |
| JP2010151690A5 true JP2010151690A5 (https=) | 2011-05-19 |
| JP4743453B2 JP4743453B2 (ja) | 2011-08-10 |
Family
ID=42287396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008331531A Expired - Fee Related JP4743453B2 (ja) | 2008-12-25 | 2008-12-25 | 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8624189B2 (https=) |
| EP (1) | EP2372342A4 (https=) |
| JP (1) | JP4743453B2 (https=) |
| CN (1) | CN102265138B (https=) |
| WO (1) | WO2010073770A1 (https=) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4662188B2 (ja) | 2008-02-01 | 2011-03-30 | 住友電気工業株式会社 | 受光素子、受光素子アレイおよびそれらの製造方法 |
| JP2012244061A (ja) * | 2011-05-23 | 2012-12-10 | Mitsubishi Electric Corp | 半導体受光装置 |
| IL220675B (en) * | 2012-06-28 | 2019-10-31 | Elta Systems Ltd | Phototransistor device |
| JP2014216624A (ja) * | 2013-04-30 | 2014-11-17 | 住友電気工業株式会社 | エピタキシャルウエハ、その製造方法、半導体素子、および光学センサ装置 |
| JP6220614B2 (ja) * | 2013-09-20 | 2017-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| SE540878C2 (en) * | 2015-06-29 | 2018-12-11 | Briano Floria Ottonello | A sensor device and a method of detecting a component in gas |
| CN105067560B (zh) * | 2015-07-27 | 2017-11-28 | 浙江中烟工业有限责任公司 | 一种自动对比式烟叶水分测量通道调节方法 |
| JP6533719B2 (ja) * | 2015-08-28 | 2019-06-19 | 旭化成エレクトロニクス株式会社 | 受発光装置 |
| JP6681768B2 (ja) * | 2016-03-31 | 2020-04-15 | 三菱重工業株式会社 | 炉内観察装置及びこれを備えるガス化炉設備 |
| JP6685839B2 (ja) * | 2016-05-30 | 2020-04-22 | 株式会社東芝 | ガス検出装置 |
| CN106979832B (zh) * | 2017-03-22 | 2023-08-15 | 河南北方红阳机电有限公司 | 一种光纤分光测温系统及其测温方法 |
| DE102017115660A1 (de) * | 2017-07-12 | 2019-01-17 | Endress+Hauser Conducta Gmbh+Co. Kg | Optisches System |
| CN110354691B (zh) | 2018-03-26 | 2020-12-18 | 京东方科技集团股份有限公司 | 气体筛选膜及其制造方法和面罩 |
| CN108551503B (zh) * | 2018-04-25 | 2020-08-11 | 北京小米移动软件有限公司 | 一种光学器件模组及移动终端 |
| CN108803534A (zh) * | 2018-07-23 | 2018-11-13 | 合肥金星机电科技发展有限公司 | 乙烯裂解炉烧焦过程监测系统 |
| DE112019004680T5 (de) * | 2018-09-19 | 2021-06-10 | Sony Semiconductor Solutions Corporation | Bildgebungselement, halbleiterelement und elektronische einrichtung |
| CN109580764B (zh) * | 2018-12-20 | 2020-12-04 | 北京科技大学 | 一种半绝缘GaAs、SiC中痕量杂质浓度分布的SIMS优化检测方法 |
| TWI686592B (zh) * | 2018-12-21 | 2020-03-01 | 中國鋼鐵股份有限公司 | 監測目標物表面溫度的方法 |
| JP7314639B2 (ja) * | 2019-06-17 | 2023-07-26 | 富士通株式会社 | 赤外線検出器、及びこれを用いた撮像装置 |
| CN111524996A (zh) * | 2020-04-29 | 2020-08-11 | 中山德华芯片技术有限公司 | 一种含稀氮化合物的红外探测器外延片 |
| US12546711B2 (en) * | 2021-11-29 | 2026-02-10 | Asahi Kasei Microdevices Corporation | Concentration measurement apparatus comprising an infrared effect detection unit, a temperature measurement unit, and a signal processing unit, and concentration measurement method |
| US12546712B2 (en) | 2022-03-17 | 2026-02-10 | Asahi Kasei Microdevices Corporation | Apparatus and method for measuring concentration of gas in measurement target |
| KR102623012B1 (ko) * | 2023-10-17 | 2024-01-10 | 한국표준과학연구원 | 복수 채널 가스 검출 장치 및 이의 제조 방법 |
| WO2025091268A1 (zh) * | 2023-10-31 | 2025-05-08 | 深圳高性能医疗器械国家研究院有限公司 | 一种光学传感器、光学检测方法及存储介质 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2708409B2 (ja) * | 1986-06-20 | 1998-02-04 | 株式会社日立製作所 | 半導体受光素子およびその製造方法 |
| JPH0338887A (ja) * | 1989-07-06 | 1991-02-19 | Fujitsu Ltd | 半導体受光素子 |
| JPH0579624A (ja) | 1991-09-18 | 1993-03-30 | Babcock Hitachi Kk | 燃焼診断装置 |
| JPH05160426A (ja) * | 1991-12-06 | 1993-06-25 | Nec Corp | 半導体受光素子 |
| JPH05160429A (ja) * | 1991-12-09 | 1993-06-25 | Nec Corp | 赤外線検知器 |
| JPH05196220A (ja) | 1992-01-16 | 1993-08-06 | Yokogawa Electric Corp | ごみ焼却装置 |
| JPH09219563A (ja) | 1996-02-09 | 1997-08-19 | Hitachi Ltd | 半導体光素子とそれを用いた応用システム |
| JPH09304274A (ja) | 1996-05-10 | 1997-11-28 | Hitachi Cable Ltd | 光式ガス濃度検出方法及びその装置 |
| JP2001144278A (ja) | 1999-11-12 | 2001-05-25 | Nippon Sheet Glass Co Ltd | 受光素子アレイ |
| JP2002373999A (ja) | 2001-06-14 | 2002-12-26 | Yokogawa Electric Corp | 半導体素子 |
| JP5008874B2 (ja) | 2005-02-23 | 2012-08-22 | 住友電気工業株式会社 | 受光素子と受光素子を用いた光通信用受信モジュールおよび受光素子を用いた計測器 |
| JP4956944B2 (ja) * | 2005-09-12 | 2012-06-20 | 三菱電機株式会社 | アバランシェフォトダイオード |
| JP2007120971A (ja) | 2005-10-25 | 2007-05-17 | Hitachi Cable Ltd | 光式水素ガス及び炭化水素ガスセンサ |
| JP2007201432A (ja) * | 2005-12-28 | 2007-08-09 | Sumitomo Electric Ind Ltd | 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置 |
| TWI402896B (zh) * | 2006-02-02 | 2013-07-21 | Nippon Mining Co | Substrate semiconductor growth substrate and epitaxial growth method |
| JP5092251B2 (ja) * | 2006-02-22 | 2012-12-05 | 住友電気工業株式会社 | 光検出装置 |
| US7679059B2 (en) | 2006-04-19 | 2010-03-16 | Spectrasensors, Inc. | Measuring water vapor in hydrocarbons |
| JP2007324572A (ja) * | 2006-05-02 | 2007-12-13 | Sumitomo Electric Ind Ltd | 受光素子アレイ、その製造方法、および光計測システム |
| CN101021474B (zh) * | 2006-12-05 | 2010-09-01 | 中国科学院安徽光学精密机械研究所 | 开放式气体多组分监测仪及监测方法 |
| JP2008153311A (ja) * | 2006-12-14 | 2008-07-03 | Sumitomo Electric Ind Ltd | 半導体受光素子、視界支援装置および生体医療装置 |
| US7608825B2 (en) * | 2006-12-14 | 2009-10-27 | Sumitomo Electric Industries, Ltd. | Image pickup device, vision enhancement apparatus, night-vision apparatus, navigation support apparatus, and monitoring apparatus |
| JP2008171885A (ja) * | 2007-01-09 | 2008-07-24 | Sumitomo Electric Ind Ltd | 半導体受光素子およびその製造方法 |
| JP2008205001A (ja) * | 2007-02-16 | 2008-09-04 | Sumitomo Electric Ind Ltd | 受光素子、センサおよび撮像装置 |
| JP5515162B2 (ja) * | 2007-03-23 | 2014-06-11 | 住友電気工業株式会社 | 半導体ウエハの製造方法 |
| JP2008288293A (ja) | 2007-05-16 | 2008-11-27 | Nippon Telegr & Teleph Corp <Ntt> | 半導体受光素子 |
| JP4341702B2 (ja) | 2007-06-21 | 2009-10-07 | 住友電気工業株式会社 | Ｉｉｉ族窒化物系半導体発光素子 |
| JP4662188B2 (ja) * | 2008-02-01 | 2011-03-30 | 住友電気工業株式会社 | 受光素子、受光素子アレイおよびそれらの製造方法 |
| JP5195172B2 (ja) | 2008-08-29 | 2013-05-08 | 住友電気工業株式会社 | 水分検出装置、生体中水分検出装置、自然産物中水分検出装置、および製品・材料中水分検出装置 |
| JP5233535B2 (ja) * | 2008-09-11 | 2013-07-10 | 住友電気工業株式会社 | 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置 |
| JP5233549B2 (ja) * | 2008-09-22 | 2013-07-10 | 住友電気工業株式会社 | 食品品質検査装置、食品成分検査装置、異物成分検査装置、食味検査装置および変移状態検査装置 |
| JP5422990B2 (ja) * | 2008-12-22 | 2014-02-19 | 住友電気工業株式会社 | 生体成分検出装置 |
-
2008
- 2008-12-25 JP JP2008331531A patent/JP4743453B2/ja not_active Expired - Fee Related
-
2009
- 2009-07-30 WO PCT/JP2009/063581 patent/WO2010073770A1/ja not_active Ceased
- 2009-07-30 CN CN200980152617.2A patent/CN102265138B/zh not_active Expired - Fee Related
- 2009-07-30 EP EP09834576.2A patent/EP2372342A4/en not_active Withdrawn
- 2009-07-30 US US13/142,039 patent/US8624189B2/en not_active Expired - Fee Related
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