CN102265138B - 气体监测装置、燃烧状态监测装置、长期变化监测装置和杂质浓度监测装置 - Google Patents

气体监测装置、燃烧状态监测装置、长期变化监测装置和杂质浓度监测装置 Download PDF

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Publication number
CN102265138B
CN102265138B CN200980152617.2A CN200980152617A CN102265138B CN 102265138 B CN102265138 B CN 102265138B CN 200980152617 A CN200980152617 A CN 200980152617A CN 102265138 B CN102265138 B CN 102265138B
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gas
absorption layer
light receiving
receiving element
light
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CN102265138A (zh
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稻田博史
永井阳一
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Sumitomo Electric Industries Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
    • G01J5/602—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature using selective, monochromatic or bandpass filtering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0044—Furnaces, ovens, kilns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/359—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using near infrared light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0077—Imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • G01N2021/3531—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis without instrumental source, i.e. radiometric
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/08—Optical fibres; light guides
    • G01N2201/0833—Fibre array at detector, resolving
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/08—Optical fibres; light guides
    • G01N2201/0846—Fibre interface with sample, e.g. for spatial resolution

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
CN200980152617.2A 2008-12-25 2009-07-30 气体监测装置、燃烧状态监测装置、长期变化监测装置和杂质浓度监测装置 Expired - Fee Related CN102265138B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008331531A JP4743453B2 (ja) 2008-12-25 2008-12-25 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置
JP2008-331531 2008-12-25
PCT/JP2009/063581 WO2010073770A1 (ja) 2008-12-25 2009-07-30 気体モニタリング装置、燃焼状態モニタリング装置、経年変化モニタリング装置、および不純物濃度モニタリング装置

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CN102265138A CN102265138A (zh) 2011-11-30
CN102265138B true CN102265138B (zh) 2014-12-10

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US (1) US8624189B2 (https=)
EP (1) EP2372342A4 (https=)
JP (1) JP4743453B2 (https=)
CN (1) CN102265138B (https=)
WO (1) WO2010073770A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4662188B2 (ja) 2008-02-01 2011-03-30 住友電気工業株式会社 受光素子、受光素子アレイおよびそれらの製造方法
JP2012244061A (ja) * 2011-05-23 2012-12-10 Mitsubishi Electric Corp 半導体受光装置
IL220675B (en) * 2012-06-28 2019-10-31 Elta Systems Ltd Phototransistor device
JP2014216624A (ja) * 2013-04-30 2014-11-17 住友電気工業株式会社 エピタキシャルウエハ、その製造方法、半導体素子、および光学センサ装置
JP6220614B2 (ja) * 2013-09-20 2017-10-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
SE540878C2 (en) * 2015-06-29 2018-12-11 Briano Floria Ottonello A sensor device and a method of detecting a component in gas
CN105067560B (zh) * 2015-07-27 2017-11-28 浙江中烟工业有限责任公司 一种自动对比式烟叶水分测量通道调节方法
JP6533719B2 (ja) * 2015-08-28 2019-06-19 旭化成エレクトロニクス株式会社 受発光装置
JP6681768B2 (ja) * 2016-03-31 2020-04-15 三菱重工業株式会社 炉内観察装置及びこれを備えるガス化炉設備
JP6685839B2 (ja) * 2016-05-30 2020-04-22 株式会社東芝 ガス検出装置
CN106979832B (zh) * 2017-03-22 2023-08-15 河南北方红阳机电有限公司 一种光纤分光测温系统及其测温方法
DE102017115660A1 (de) * 2017-07-12 2019-01-17 Endress+Hauser Conducta Gmbh+Co. Kg Optisches System
CN110354691B (zh) 2018-03-26 2020-12-18 京东方科技集团股份有限公司 气体筛选膜及其制造方法和面罩
CN108551503B (zh) * 2018-04-25 2020-08-11 北京小米移动软件有限公司 一种光学器件模组及移动终端
CN108803534A (zh) * 2018-07-23 2018-11-13 合肥金星机电科技发展有限公司 乙烯裂解炉烧焦过程监测系统
DE112019004680T5 (de) * 2018-09-19 2021-06-10 Sony Semiconductor Solutions Corporation Bildgebungselement, halbleiterelement und elektronische einrichtung
CN109580764B (zh) * 2018-12-20 2020-12-04 北京科技大学 一种半绝缘GaAs、SiC中痕量杂质浓度分布的SIMS优化检测方法
TWI686592B (zh) * 2018-12-21 2020-03-01 中國鋼鐵股份有限公司 監測目標物表面溫度的方法
JP7314639B2 (ja) * 2019-06-17 2023-07-26 富士通株式会社 赤外線検出器、及びこれを用いた撮像装置
CN111524996A (zh) * 2020-04-29 2020-08-11 中山德华芯片技术有限公司 一种含稀氮化合物的红外探测器外延片
US12546711B2 (en) * 2021-11-29 2026-02-10 Asahi Kasei Microdevices Corporation Concentration measurement apparatus comprising an infrared effect detection unit, a temperature measurement unit, and a signal processing unit, and concentration measurement method
US12546712B2 (en) 2022-03-17 2026-02-10 Asahi Kasei Microdevices Corporation Apparatus and method for measuring concentration of gas in measurement target
KR102623012B1 (ko) * 2023-10-17 2024-01-10 한국표준과학연구원 복수 채널 가스 검출 장치 및 이의 제조 방법
WO2025091268A1 (zh) * 2023-10-31 2025-05-08 深圳高性能医疗器械国家研究院有限公司 一种光学传感器、光学检测方法及存储介质

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201432A (ja) * 2005-12-28 2007-08-09 Sumitomo Electric Ind Ltd 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置
CN101021474A (zh) * 2006-12-05 2007-08-22 中国科学院安徽光学精密机械研究所 开放式气体多组分监测仪及监测方法
WO2007120931A1 (en) * 2006-04-19 2007-10-25 Spectrasensors, Inc. Measuring water vapor in hydrocarbons
CN101330123A (zh) * 2007-06-21 2008-12-24 住友电气工业株式会社 Ⅲ族氮化物系半导体发光元件

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2708409B2 (ja) * 1986-06-20 1998-02-04 株式会社日立製作所 半導体受光素子およびその製造方法
JPH0338887A (ja) * 1989-07-06 1991-02-19 Fujitsu Ltd 半導体受光素子
JPH0579624A (ja) 1991-09-18 1993-03-30 Babcock Hitachi Kk 燃焼診断装置
JPH05160426A (ja) * 1991-12-06 1993-06-25 Nec Corp 半導体受光素子
JPH05160429A (ja) * 1991-12-09 1993-06-25 Nec Corp 赤外線検知器
JPH05196220A (ja) 1992-01-16 1993-08-06 Yokogawa Electric Corp ごみ焼却装置
JPH09219563A (ja) 1996-02-09 1997-08-19 Hitachi Ltd 半導体光素子とそれを用いた応用システム
JPH09304274A (ja) 1996-05-10 1997-11-28 Hitachi Cable Ltd 光式ガス濃度検出方法及びその装置
JP2001144278A (ja) 1999-11-12 2001-05-25 Nippon Sheet Glass Co Ltd 受光素子アレイ
JP2002373999A (ja) 2001-06-14 2002-12-26 Yokogawa Electric Corp 半導体素子
JP5008874B2 (ja) 2005-02-23 2012-08-22 住友電気工業株式会社 受光素子と受光素子を用いた光通信用受信モジュールおよび受光素子を用いた計測器
JP4956944B2 (ja) * 2005-09-12 2012-06-20 三菱電機株式会社 アバランシェフォトダイオード
JP2007120971A (ja) 2005-10-25 2007-05-17 Hitachi Cable Ltd 光式水素ガス及び炭化水素ガスセンサ
TWI402896B (zh) * 2006-02-02 2013-07-21 Nippon Mining Co Substrate semiconductor growth substrate and epitaxial growth method
JP5092251B2 (ja) * 2006-02-22 2012-12-05 住友電気工業株式会社 光検出装置
JP2007324572A (ja) * 2006-05-02 2007-12-13 Sumitomo Electric Ind Ltd 受光素子アレイ、その製造方法、および光計測システム
JP2008153311A (ja) * 2006-12-14 2008-07-03 Sumitomo Electric Ind Ltd 半導体受光素子、視界支援装置および生体医療装置
US7608825B2 (en) * 2006-12-14 2009-10-27 Sumitomo Electric Industries, Ltd. Image pickup device, vision enhancement apparatus, night-vision apparatus, navigation support apparatus, and monitoring apparatus
JP2008171885A (ja) * 2007-01-09 2008-07-24 Sumitomo Electric Ind Ltd 半導体受光素子およびその製造方法
JP2008205001A (ja) * 2007-02-16 2008-09-04 Sumitomo Electric Ind Ltd 受光素子、センサおよび撮像装置
JP5515162B2 (ja) * 2007-03-23 2014-06-11 住友電気工業株式会社 半導体ウエハの製造方法
JP2008288293A (ja) 2007-05-16 2008-11-27 Nippon Telegr & Teleph Corp <Ntt> 半導体受光素子
JP4662188B2 (ja) * 2008-02-01 2011-03-30 住友電気工業株式会社 受光素子、受光素子アレイおよびそれらの製造方法
JP5195172B2 (ja) 2008-08-29 2013-05-08 住友電気工業株式会社 水分検出装置、生体中水分検出装置、自然産物中水分検出装置、および製品・材料中水分検出装置
JP5233535B2 (ja) * 2008-09-11 2013-07-10 住友電気工業株式会社 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置
JP5233549B2 (ja) * 2008-09-22 2013-07-10 住友電気工業株式会社 食品品質検査装置、食品成分検査装置、異物成分検査装置、食味検査装置および変移状態検査装置
JP5422990B2 (ja) * 2008-12-22 2014-02-19 住友電気工業株式会社 生体成分検出装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007201432A (ja) * 2005-12-28 2007-08-09 Sumitomo Electric Ind Ltd 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置
WO2007120931A1 (en) * 2006-04-19 2007-10-25 Spectrasensors, Inc. Measuring water vapor in hydrocarbons
CN101021474A (zh) * 2006-12-05 2007-08-22 中国科学院安徽光学精密机械研究所 开放式气体多组分监测仪及监测方法
CN101330123A (zh) * 2007-06-21 2008-12-24 住友电气工业株式会社 Ⅲ族氮化物系半导体发光元件

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2007-201432A 2007.08.09 *

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JP4743453B2 (ja) 2011-08-10
JP2010151690A (ja) 2010-07-08
US20110261359A1 (en) 2011-10-27
US8624189B2 (en) 2014-01-07
EP2372342A1 (en) 2011-10-05
WO2010073770A1 (ja) 2010-07-01
CN102265138A (zh) 2011-11-30
EP2372342A4 (en) 2014-12-17

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