JP7314639B2 - 赤外線検出器、及びこれを用いた撮像装置 - Google Patents
赤外線検出器、及びこれを用いた撮像装置 Download PDFInfo
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- H01L27/144—Devices controlled by radiation
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
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Description
第1のカットオフ波長を有する第1受光層と、
第1のカットオフ波長よりも長い第2のカットオフ波長を有する第2受光層と、
前記第1受光層と前記第2受光層の間に配置され、前記第1のカットオフ波長と同じかそれより長く、かつ前記第2のカットオフ波長と同じかそれよりも短い第3のカットオフ波長を有する中間フィルタ層と、
前記第1受光層と前記中間フィルタ層の間に配置される第1バリア層と、
前記第2受光層と前記中間フィルタ層の間に配置される第2バリア層と、
を有する。
6 信号処理回路
10 受光素子
22 光吸収層
221 第1受光層
222 第1バリア層
223 中間フィルタ層
224 第2バリア層
225 第2受光層
26 上部電極
41 基板
45、46 半導体電極層
47 キャップ層
50 読出し回路
51 下部電極
53 接合電極
100 画素アレイ
101 画素
150 赤外線検出器
M メサ
Claims (8)
- 第1のカットオフ波長を有する第1受光層と、
第1のカットオフ波長よりも長い第2のカットオフ波長を有する第2受光層と、
前記第1受光層と前記第2受光層の間に配置され、前記第1のカットオフ波長と同じかそれより長く、かつ前記第2のカットオフ波長と同じかそれよりも短い第3のカットオフ波長を有する中間フィルタ層と、
前記第1受光層と前記中間フィルタ層の間に配置される第1バリア層と、
前記第2受光層と前記中間フィルタ層の間に配置される第2バリア層と、
を有し、
前記第1受光層、前記第2受光層、前記中間フィルタ層、前記第1バリア層、及び前記第2バリア層は、同じ導電型である
赤外線検出器。 - 前記中間フィルタ層、前記第1バリア層、及び前記第2バリア層の不純物濃度は、前記第1受光層と前記第2受光層の不純物濃度よりも低いことを特徴とする請求項1に記載の赤外線検出器。
- 前記第1バリア層と前記第2バリア層のエネルギーバンドギャップは、前記第1受光層、前記中間フィルタ層、及び前記第2受光層のエネルギーバンドギャップよりも大きいことを特徴とする請求項1または2に記載の赤外線検出器。
- 前記第1受光層と前記第2受光層で発生する動作キャリアはn型キャリアであり、前記第1受光層、前記第2受光層、前記第1バリア層、前記第2バリア層、及び前記中間フィルタ層は、InAs、GaSb、AlSbから選択される2以上の材料による超格子で形成されていることを特徴とする請求項1~3のいずれか1項に記載の赤外線検出器。
- 前記第1受光層と前記第2受光層で発生する動作キャリアはp型キャリアであり、前記第1受光層、前記中間フィルタ層、及び前記第2受光層は、InAs、GaSb、AlSbから選択される2以上の材料による超格子で形成されており、
前記第1バリア層と前記第2バリア層はAlxGa1-xSbで形成されていることを特徴とする請求項1~3のいずれか1項に記載の赤外線検出器。 - 前記超格子を形成する繰り返し層への不純物の導入は不均一であることを特徴とする請求項4または5に記載の赤外線検出器。
- 前記第1受光層、前記第1バリア層、前記中間フィルタ層、前記第2バリア層、及び前記第2受光層がこの順で積層された受光素子が複数配列された画素アレイと、
前記画素アレイに接合される読出し回路と、
を有する請求項1~6のいずれか1項に記載の赤外線検出器。 - 請求項7の赤外線検出器と、
前記読出し回路の出力に接続される信号処理回路と、
を有する撮像装置。
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JP2019112194A JP7314639B2 (ja) | 2019-06-17 | 2019-06-17 | 赤外線検出器、及びこれを用いた撮像装置 |
US16/888,894 US11549844B2 (en) | 2019-06-17 | 2020-06-01 | Infrared detector and imaging device using the same |
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