JP2010135773A5

JP2010135773A5 - Method for manufacturing semiconductor device

Info

Publication number: JP2010135773A5
Application number: JP2009252655A
Authority: JP
Filing date: 2009-11-04
Publication date: 2012-10-18
Anticipated expiration: 2029-11-04

Claims

Forming a gate electrode on the substrate;
Forming a gate insulating layer on the gate electrode;
Forming an oxide semiconductor layer over the gate insulating layer;
Forming a source electrode and a drain electrode on the oxide semiconductor layer;
And a step of adding a metal element to a region not covered with the source electrode and the drain electrode in the vicinity of the surface of the oxide semiconductor layer.

Forming a gate electrode on the substrate;
Forming a gate insulating layer on the gate electrode;
Forming an oxide semiconductor layer over the gate insulating layer;
And a step of adding a metal element in the vicinity of the surface of the oxide semiconductor layer.

Forming a gate electrode on the substrate;
Forming a gate insulating layer on the gate electrode;
Forming a source electrode and a drain electrode on the gate insulating layer;
Forming an oxide semiconductor layer over the source electrode and the drain electrode;
And a step of adding a metal element in the vicinity of the surface of the oxide semiconductor layer.

In any one of Claims 1 thru | or 3,
A method for manufacturing a semiconductor device, wherein the metal element is added by ion implantation.

In any one of Claims 1 thru | or 4,
A method for manufacturing a semiconductor device, wherein at least one of iron, nickel, cobalt, copper, gold, molybdenum, tungsten, niobium, and tantalum is added as the metal element.