JP2010045369A - ピンホールアンダーカット部を含む装置と工程 - Google Patents

ピンホールアンダーカット部を含む装置と工程 Download PDF

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Publication number
JP2010045369A
JP2010045369A JP2009187638A JP2009187638A JP2010045369A JP 2010045369 A JP2010045369 A JP 2010045369A JP 2009187638 A JP2009187638 A JP 2009187638A JP 2009187638 A JP2009187638 A JP 2009187638A JP 2010045369 A JP2010045369 A JP 2010045369A
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Japan
Prior art keywords
region
dielectric
conductive region
lower conductive
undercut
Prior art date
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Pending
Application number
JP2009187638A
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English (en)
Japanese (ja)
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JP2010045369A5 (enExample
Inventor
Yiliang Wu
ウー イーリャン
Ping Liu
リュー ピン
Yuning Li
リー ユニン
Hualong Pan
パン ファーロン
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Xerox Corp
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Xerox Corp
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Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JP2010045369A publication Critical patent/JP2010045369A/ja
Publication of JP2010045369A5 publication Critical patent/JP2010045369A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2009187638A 2008-08-18 2009-08-13 ピンホールアンダーカット部を含む装置と工程 Pending JP2010045369A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/193,249 US7821068B2 (en) 2008-08-18 2008-08-18 Device and process involving pinhole undercut area

Publications (2)

Publication Number Publication Date
JP2010045369A true JP2010045369A (ja) 2010-02-25
JP2010045369A5 JP2010045369A5 (enExample) 2012-09-27

Family

ID=41262208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009187638A Pending JP2010045369A (ja) 2008-08-18 2009-08-13 ピンホールアンダーカット部を含む装置と工程

Country Status (6)

Country Link
US (1) US7821068B2 (enExample)
EP (1) EP2157629A3 (enExample)
JP (1) JP2010045369A (enExample)
KR (1) KR20100021975A (enExample)
CN (1) CN101656294A (enExample)
CA (1) CA2675083C (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101070289B1 (ko) * 2009-12-30 2011-10-06 주식회사 하이닉스반도체 반도체 장치 제조방법
US9076975B2 (en) 2010-04-27 2015-07-07 Xerox Corporation Dielectric composition for thin-film transistors
TWI445180B (zh) * 2011-09-28 2014-07-11 E Ink Holdings Inc 陣列基板及使用其之顯示裝置
CN108039338A (zh) * 2017-11-24 2018-05-15 华中科技大学 一种消除介质层针孔缺陷影响的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183972A (ja) * 1985-02-08 1986-08-16 Matsushita Electric Ind Co Ltd 薄膜半導体装置の製造方法
JP2001281695A (ja) * 2000-03-30 2001-10-10 Sharp Corp 薄膜静電容量の製造方法および液晶表示装置
JP2007005782A (ja) * 2005-05-27 2007-01-11 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
WO2008059633A1 (en) * 2006-11-15 2008-05-22 Sharp Kabushiki Kaisha Semiconductor element, method for fabricating the same and display

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DE2707959A1 (de) 1977-02-24 1978-08-31 Eberhard Loeffelholz Skistock und skihandschuh halte- und fangvorrichtung
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
JP3200639B2 (ja) * 1992-05-19 2001-08-20 カシオ計算機株式会社 薄膜トランジスタパネルの製造方法
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
US5424233A (en) * 1994-05-06 1995-06-13 United Microflectronics Corporation Method of making electrically programmable and erasable memory device with a depression
US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
US6331722B1 (en) * 1997-01-18 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Hybrid circuit and electronic device using same
JP4434411B2 (ja) * 2000-02-16 2010-03-17 出光興産株式会社 アクティブ駆動型有機ｅｌ発光装置およびその製造方法
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6949762B2 (en) 2002-01-11 2005-09-27 Xerox Corporation Polythiophenes and devices thereof
US6621099B2 (en) 2002-01-11 2003-09-16 Xerox Corporation Polythiophenes and devices thereof
US6770904B2 (en) 2002-01-11 2004-08-03 Xerox Corporation Polythiophenes and electronic devices generated therefrom
US20030227014A1 (en) 2002-06-11 2003-12-11 Xerox Corporation. Process for forming semiconductor layer of micro-and nano-electronic devices
JP3532188B1 (ja) 2002-10-21 2004-05-31 沖電気工業株式会社 半導体装置及びその製造方法
US20060073613A1 (en) * 2004-09-29 2006-04-06 Sanjeev Aggarwal Ferroelectric memory cells and methods for fabricating ferroelectric memory cells and ferroelectric capacitors thereof
US7205608B2 (en) * 2005-07-25 2007-04-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
JP2007073779A (ja) * 2005-09-07 2007-03-22 Elpida Memory Inc 不揮発性メモリ素子及びその製造方法
US20070128758A1 (en) * 2005-12-01 2007-06-07 Keisuke Tanaka Semiconductor device and method for fabricating the same
US20070145453A1 (en) * 2005-12-23 2007-06-28 Xerox Corporation Dielectric layer for electronic devices
US7488643B2 (en) * 2006-06-21 2009-02-10 International Business Machines Corporation MIM capacitor and method of making same
US7855097B2 (en) * 2008-07-11 2010-12-21 Organicid, Inc. Method of increasing yield in OFETs by using a high-K dielectric layer in a dual dielectric layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183972A (ja) * 1985-02-08 1986-08-16 Matsushita Electric Ind Co Ltd 薄膜半導体装置の製造方法
JP2001281695A (ja) * 2000-03-30 2001-10-10 Sharp Corp 薄膜静電容量の製造方法および液晶表示装置
JP2007005782A (ja) * 2005-05-27 2007-01-11 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
WO2008059633A1 (en) * 2006-11-15 2008-05-22 Sharp Kabushiki Kaisha Semiconductor element, method for fabricating the same and display

Also Published As

Publication number Publication date
CA2675083C (en) 2013-03-12
KR20100021975A (ko) 2010-02-26
EP2157629A3 (en) 2015-05-13
EP2157629A2 (en) 2010-02-24
CN101656294A (zh) 2010-02-24
CA2675083A1 (en) 2010-02-18
US7821068B2 (en) 2010-10-26
US20100038714A1 (en) 2010-02-18

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