CN101656294A - 包括针孔底切区域的器件和工艺 - Google Patents
包括针孔底切区域的器件和工艺 Download PDFInfo
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- CN101656294A CN101656294A CN200910166517A CN200910166517A CN101656294A CN 101656294 A CN101656294 A CN 101656294A CN 200910166517 A CN200910166517 A CN 200910166517A CN 200910166517 A CN200910166517 A CN 200910166517A CN 101656294 A CN101656294 A CN 101656294A
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- 238000005441 electronic device fabrication Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 115
- 239000010410 layer Substances 0.000 description 38
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 239000010949 copper Substances 0.000 description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 17
- 239000000758 substrate Substances 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
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- 229910052737 gold Inorganic materials 0.000 description 11
- 239000010931 gold Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 239000004411 aluminium Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
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- 239000011651 chromium Substances 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 9
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 8
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- 238000004528 spin coating Methods 0.000 description 5
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- 229910017840 NH 3 Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
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- 229920000728 polyester Polymers 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
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- 238000000137 annealing Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
金属 | 蚀刻剂 | 比例(体积) | 备注 |
铝 | H2O/HF | 1∶1 | |
铝 | HCl/HNO3/HF | 1∶1∶1 | |
锑 | H2O/HCl/HNO3 | 1∶1∶1 | |
锑 | H2O/HF/HNO3 | 90∶1∶10 | |
铋 | H2O/HF | 10∶1 | |
铬 | H2O/H2O2 | 3∶1 | |
铜 | H2O/HNO3 | 1∶5 | |
金 | HCl/HNO3 | 3∶1 | 热 |
铟 | HCl/HNO3 | 3∶1 | 热 |
铁 | H2O/HCl | 1∶1 | |
镍 | HNO3/醋酸/丙酮 | 1∶1∶1 | |
镍 | HF/HNO3 | 1∶1 | |
铂 | HCl/HNO3 | 3∶1 | 热 |
银 | NH3OH/H2O2 | 1∶1 | |
钛 | H2O/HF/HNO3 | 50∶1∶1 | |
钛 | H2O/HF/H2O2 | 20∶1∶1 |
蚀刻剂 | Al | AU | Cr | Cu | Ni | Si | Si3N4 | SiO2 | Ti | W | GaAs | Ta/TaN |
铝A | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | surfox | 轻微 | ok | ok | ok | 蚀刻 | surfox |
铝D | 蚀刻 | ok | 轻微 | ok | ok | ok | 轻微 | ok | ok | ok | ok | ok |
铬蚀刻剂1020 | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | surfox | ok | ok | ok | ok | 蚀刻 | surfox |
铬蚀刻剂CRE-473 | 蚀刻 | ok | 蚀刻 | 蚀刻 | 轻微 | ok | ok | ok | 蚀刻 | ok | 蚀刻 | ok |
铬蚀刻剂TFD | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | surfox | ok | ok | ok | ok | 蚀刻 | surfox |
铜蚀刻剂100 | 蚀刻 | ok | 轻微 | 蚀刻 | 蚀刻 | ok | ok | ok | 轻微 | ok | 蚀刻 | ok |
铜蚀刻剂200 | 蚀刻 | ok | 轻微 | 蚀刻 | 蚀刻 | ok | ok | ok | 轻微 | ok | 蚀刻 | ok |
铜蚀刻剂APS-100 | ok | ok | ok | 蚀刻 | 蚀刻 | ok | ok | ok | ok | 轻微 | NA | ok |
GE-8110 | 蚀刻 | 蚀刻 | ok | 腐蚀 | ok | ok | ok | ok | ok | ok | 蚀刻 | ok |
GE-8111 | 蚀刻 | 蚀刻 | ok | 腐蚀 | ok | ok | 轻微 | ok | ok | ok | 蚀刻 | ok |
GE-8148 | 蚀刻 | 蚀刻 | ok | 腐蚀 | ok | ok | ok | ok | ok | ok | 蚀刻 | ok |
金蚀刻剂TFA | 蚀刻 | 蚀刻 | ok | 腐蚀 | 轻微 | ok | ok | ok | ok | ok | 蚀刻 | ok |
镍镉蚀刻剂TFC | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | surfox | ok | ok | ok | ok | 蚀刻 | surfox |
镍镉蚀刻剂TFN | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | surfox | ok | ok | ok | ok | 蚀刻 | surfox |
镍蚀刻剂TFB | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | surfox | ok | ok | ok | ok | 蚀刻 | surfox |
镍蚀刻剂TFG | 蚀刻 | ok | ok | ok | 蚀刻 | ok | ok | ok | ok | ok | ok | ok |
镍蚀刻剂型I | 蚀刻 | ok | 轻微 | 蚀刻 | 蚀刻 | ok | ok | ok | 轻微 | ok | 蚀刻 | ok |
银蚀刻剂TFS | 蚀刻 | 蚀刻 | ok | 腐蚀 | 轻微 | ok | ok | ok | ok | ok | 蚀刻 | ok |
氮化钽蚀刻剂III | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | 蚀刻 | ok | 蚀刻 | 蚀刻 | ok | 蚀刻 | 蚀刻 |
氮化钽SIE-8607 | 蚀刻 | ok | 蚀刻 | 蚀刻 | 蚀刻 | 蚀刻 | ok | 蚀刻 | 蚀刻 | ok | 蚀刻 | 蚀刻 |
钛蚀刻剂TFT | 蚀刻 | ok | 蚀刻 | ok | ok | ok | 蚀刻 | 蚀刻 | 蚀刻 | ok | ok | ok |
钛蚀刻剂TFTN | 蚀刻 | ok | 蚀刻 | 轻微 | 轻微 | ok | ok | ok | 蚀刻 | ok | 蚀刻 | ok |
Ti-钨TiW-30 | ok | ok | ok | 蚀刻 | 轻微 | ok | ok | ok | 轻微 | 轻微 | 蚀刻 | ok |
钨蚀刻剂TFW | 蚀刻 | ok | 蚀刻 | ok | ok | 轻微 | ok | 轻微 | ok | 蚀刻 | 蚀刻 | ok |
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US12/193249 | 2008-08-18 | ||
US12/193,249 US7821068B2 (en) | 2008-08-18 | 2008-08-18 | Device and process involving pinhole undercut area |
Publications (1)
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CN101656294A true CN101656294A (zh) | 2010-02-24 |
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CN200910166517A Pending CN101656294A (zh) | 2008-08-18 | 2009-08-17 | 包括针孔底切区域的器件和工艺 |
Country Status (6)
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US (1) | US7821068B2 (zh) |
EP (1) | EP2157629A3 (zh) |
JP (1) | JP2010045369A (zh) |
KR (1) | KR20100021975A (zh) |
CN (1) | CN101656294A (zh) |
CA (1) | CA2675083C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108039338A (zh) * | 2017-11-24 | 2018-05-15 | 华中科技大学 | 一种消除介质层针孔缺陷影响的方法 |
Families Citing this family (3)
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KR101070289B1 (ko) * | 2009-12-30 | 2011-10-06 | 주식회사 하이닉스반도체 | 반도체 장치 제조방법 |
US9076975B2 (en) | 2010-04-27 | 2015-07-07 | Xerox Corporation | Dielectric composition for thin-film transistors |
TWI445180B (zh) * | 2011-09-28 | 2014-07-11 | E Ink Holdings Inc | 陣列基板及使用其之顯示裝置 |
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- 2009-08-14 KR KR1020090075355A patent/KR20100021975A/ko not_active Application Discontinuation
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Publication number | Publication date |
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CA2675083C (en) | 2013-03-12 |
EP2157629A2 (en) | 2010-02-24 |
US7821068B2 (en) | 2010-10-26 |
CA2675083A1 (en) | 2010-02-18 |
US20100038714A1 (en) | 2010-02-18 |
EP2157629A3 (en) | 2015-05-13 |
JP2010045369A (ja) | 2010-02-25 |
KR20100021975A (ko) | 2010-02-26 |
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