JP2010034306A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2010034306A JP2010034306A JP2008195062A JP2008195062A JP2010034306A JP 2010034306 A JP2010034306 A JP 2010034306A JP 2008195062 A JP2008195062 A JP 2008195062A JP 2008195062 A JP2008195062 A JP 2008195062A JP 2010034306 A JP2010034306 A JP 2010034306A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims description 32
- 230000000903 blocking effect Effects 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 34
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 abstract description 31
- 230000002093 peripheral effect Effects 0.000 abstract description 14
- 230000015556 catabolic process Effects 0.000 abstract description 11
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 79
- 150000002500 ions Chemical class 0.000 description 14
- 229920001721 polyimide Polymers 0.000 description 10
- 239000004642 Polyimide Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000010287 polarization Effects 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000002542 deteriorative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- -1 for example Polymers 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
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Abstract
【解決手段】n型の半導体基板1の第1主表面の第1領域R1には、IGBTとなる、pベース層3、nソース層4、ゲート電極11、エミッタ電極14aが形成され、第2主表面には、コレクタ電極15が形成されている。外周接合領域としての第2領域R2では、ガードリングとなるp層5が表面から所定の深さにわたり形成されている。第2領域R2には、AlSi層14cと半絶縁性シリコン窒化膜17が形成され、さらに、オーバーコート膜18が形成されている。第3領域R3の表面にはn層6が形成され、さらに、最外周に位置するAlSi層14bから距離を隔てて、段差部20となるAlSi層14cが形成されている。
【選択図】図1
Description
「パワーデバイス・パワーICハンドブック」 電気学会・高性能高機能パワーデバイス・パワーIC調査委員会編、コロナ社、1996年
ここでは、電力用の半導体素子としてIGBTを備えた電力用の半導体装置の一例について説明する。図1に示すように、n型の半導体基板1の第1主表面における第1領域R1には、IGBTのエミッタ電極14aとゲート電極11が形成され、第2主表面にコレクタ電極15が形成されている。また、第1領域R1には、表面から所定の深さにわたりpベース層3が形成され、そのpベース層3の表面からpベース層3内にnソース層4が形成されている。pベース層とpベース層3との間に位置する半導体基板1のn型領域(nドリフト層2)の部分の上に、シリコン酸化膜10を介在させてゲート電極11が形成されている。そのゲート電極11上に層間絶縁膜12を介在させてエミッタ電極14aが形成されている。
W≧(L1+L2)/2×(L1/L2)
を満たすことが好ましい。オーバーコート材が流れ出るのを阻止するには、オーバーコート膜の厚みが厚いほど、溝としてより広い幅Wが必要となる。また、高さL2が高いほど、より狭い幅Wでオーバーコート材が流れ出るのを阻止することができる。
ここでは、電力用の半導体素子としてIGBTを備えた電力用の半導体装置の他の例について説明する。図13に示すように、第2領域R2に位置するAlSi層14bを覆う半絶縁性シリコン窒化膜17aに加えて、第3領域R3に位置する段差部20としてのAlSi層14cの上面上に、半絶縁性シリコン窒化膜17bが形成されている。なお、これ以外の構成については図1に示す半導体装置と同様なので、同一部材には同一符号を付しその説明を省略する。
W≧(L1+L2)/2×(L1/L2)
を満たすように設定されていることで、オーバーコート材がチップの外側へ流れ出るのを阻止して、所望の厚さのオーバーコート膜18を第2領域R2に形成することができ、耐圧特性等が悪化するのを防止することができる。
Claims (6)
- 対向する第1主表面および第2主表面を有する第1導電型の半導体基板と、
前記半導体基板における前記第1主表面の第1領域に形成された第1電極および前記第2主表面に形成された第2電極を含み、前記第1電極と前記第2電極との間で電流が流される電力用半導体素子と、
前記第1領域よりも外側に位置する、前記第1主表面の第2領域に形成された第2導電型のガードリングと、
前記第2領域を覆うように形成された半絶縁性絶縁膜と、
前記半絶縁性絶縁膜を覆うように、前記第2領域に形成された誘電体膜と、
前記第2領域よりも外側に位置する、前記第1主表面の第3領域に形成され、前記誘電体膜となる材料が流れ出るのを阻止する流動阻止部と
を備えた、半導体装置。 - 前記誘電体膜の膜厚は30μm以上である、請求項1記載の半導体装置。
- 前記流動阻止部は所定の高さの段差部を含む、請求項1または2に記載の半導体装置。
- 前記流動阻止部は、前記段差部として前記第1電極と同じ層から形成された第1段差部を含む、請求項3記載の半導体装置。
- 前記流動阻止部は、前記段差部として前記第1段差部上にさらに形成された、前記半絶縁性絶縁膜と同じ層からなる第2段差部を含む、請求項4記載の半導体装置。
- 前記流動阻止部は、前記段差部と前記第2領域との間に設けられた溝部を含み、
前記誘電体膜の膜厚をL1、前記第1段差部の段差をL2、前記溝部の幅をWとすると、次の関係式、
W≧(L1+L2)/2×(L1/L2)
を満たすように設定された、請求項3〜5のいずれかに記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2008195062A JP5477681B2 (ja) | 2008-07-29 | 2008-07-29 | 半導体装置 |
US12/339,702 US8450828B2 (en) | 2008-07-29 | 2008-12-19 | Semiconductor device |
KR1020090019678A KR101055987B1 (ko) | 2008-07-29 | 2009-03-09 | 반도체 장치 |
DE102009014056.5A DE102009014056B4 (de) | 2008-07-29 | 2009-03-20 | Halbleitervorrichtung |
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JP2008195062A JP5477681B2 (ja) | 2008-07-29 | 2008-07-29 | 半導体装置 |
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JP2010034306A true JP2010034306A (ja) | 2010-02-12 |
JP2010034306A5 JP2010034306A5 (ja) | 2010-12-24 |
JP5477681B2 JP5477681B2 (ja) | 2014-04-23 |
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US (1) | US8450828B2 (ja) |
JP (1) | JP5477681B2 (ja) |
KR (1) | KR101055987B1 (ja) |
DE (1) | DE102009014056B4 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012004466A (ja) * | 2010-06-21 | 2012-01-05 | Hitachi Ltd | 半導体装置 |
JP2012204634A (ja) * | 2011-03-25 | 2012-10-22 | Mitsubishi Electric Corp | 半導体装置 |
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DE102009014056B4 (de) | 2014-02-06 |
KR101055987B1 (ko) | 2011-08-11 |
US8450828B2 (en) | 2013-05-28 |
US20100025820A1 (en) | 2010-02-04 |
JP5477681B2 (ja) | 2014-04-23 |
DE102009014056A1 (de) | 2010-02-11 |
KR20100012792A (ko) | 2010-02-08 |
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