JP2009542000A5 - - Google Patents

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Publication number
JP2009542000A5
JP2009542000A5 JP2009516607A JP2009516607A JP2009542000A5 JP 2009542000 A5 JP2009542000 A5 JP 2009542000A5 JP 2009516607 A JP2009516607 A JP 2009516607A JP 2009516607 A JP2009516607 A JP 2009516607A JP 2009542000 A5 JP2009542000 A5 JP 2009542000A5
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Japan
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substrate
processing system
processing
gas
temperature
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JP2009516607A
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Japanese (ja)
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JP2009542000A (ja
JP5528106B2 (ja
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Priority claimed from US11/425,883 external-priority patent/US7718032B2/en
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JP2009516607A 2006-06-22 2007-04-26 乾式非プラズマ処理システム及び当該システムの使用方法 Active JP5528106B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/425,883 US7718032B2 (en) 2006-06-22 2006-06-22 Dry non-plasma treatment system and method of using
US11/425,883 2006-06-22
PCT/US2007/067479 WO2007149627A2 (en) 2006-06-22 2007-04-26 A dry non-plasma treatment system and method of using

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013048239A Division JP2013141013A (ja) 2006-06-22 2013-03-11 乾式非プラズマ処理システム及び当該システムの使用方法

Publications (3)

Publication Number Publication Date
JP2009542000A JP2009542000A (ja) 2009-11-26
JP2009542000A5 true JP2009542000A5 (enExample) 2014-05-08
JP5528106B2 JP5528106B2 (ja) 2014-06-25

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JP2009516607A Active JP5528106B2 (ja) 2006-06-22 2007-04-26 乾式非プラズマ処理システム及び当該システムの使用方法
JP2013048239A Pending JP2013141013A (ja) 2006-06-22 2013-03-11 乾式非プラズマ処理システム及び当該システムの使用方法

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JP2013048239A Pending JP2013141013A (ja) 2006-06-22 2013-03-11 乾式非プラズマ処理システム及び当該システムの使用方法

Country Status (5)

Country Link
US (4) US7718032B2 (enExample)
JP (2) JP5528106B2 (enExample)
KR (1) KR101375966B1 (enExample)
CN (2) CN101473419B (enExample)
WO (1) WO2007149627A2 (enExample)

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JP7018801B2 (ja) * 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
CN110942987A (zh) * 2018-09-21 2020-03-31 长鑫存储技术有限公司 一种半导体结构的形成方法
KR20220047256A (ko) 2019-08-23 2022-04-15 도쿄엘렉트론가부시키가이샤 대체 금속과 유전체에 대한 조정가능한 선택성이 있는 티타늄-함유 재료층의 넌플라즈마 에칭
DE102019218727A1 (de) * 2019-12-03 2021-06-10 Robert Bosch Gmbh Vorrichtung und verfahren zum bearbeiten mindestens eines halbleiter-substrates
KR20220028445A (ko) 2020-08-28 2022-03-08 삼성전자주식회사 웨이퍼 처리 장치 및 이를 이용한 웨이퍼 처리 방법
CN111933566A (zh) * 2020-09-24 2020-11-13 晶芯成(北京)科技有限公司 浅沟槽隔离结构的形成方法
CN112992759B (zh) * 2020-10-16 2022-04-19 重庆康佳光电技术研究院有限公司 一种器件转移设备及其制备方法、器件转移方法
CN114904692B (zh) * 2022-05-27 2023-07-28 苏州光宝科技股份有限公司 一种带有自辨别自检测效果的高精度晶圆喷涂设备
CN119678243A (zh) * 2023-07-21 2025-03-21 株式会社日立高新技术 半导体制造装置以及晶片温度控制方法
JP7607367B1 (ja) 2023-11-10 2024-12-27 ヴイエム インコーポレイテッド シャローエッチングプロセスチャンバ

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