Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
  • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
  • B05B12/08—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means
  • B05B12/12—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means responsive to conditions of ambient medium or target, e.g. humidity, temperature position or movement of the target relative to the spray apparatus
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
  • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
  • B05B12/02—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery
  • B05B12/04—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery for sequential operation or multiple outlets
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
  • B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
  • B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
• • C—CHEMISTRY; METALLURGY
  • C01—INORGANIC CHEMISTRY
  • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
  • C01B7/00—Halogens; Halogen acids
  • C01B7/19—Fluorine; Hydrogen fluoride
  • C01B7/191—Hydrogen fluoride
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K13/00—Etching, surface-brightening or pickling compositions
  • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
  • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
  • C23F1/00—Etching metallic material by chemical means
  • C23F1/02—Local etching
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
  • C23F1/00—Etching metallic material by chemical means
  • C23F1/10—Etching compositions
  • C23F1/12—Gaseous compositions
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02041—Cleaning
  • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
  • H01L21/02046—Dry cleaning only
  • H01L21/02049—Dry cleaning only with gaseous HF
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
  • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
  • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
  • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
  • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
  • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
  • H01L21/0338—Process specially adapted to improve the resolution of the mask
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
  • H01L21/30604—Chemical etching
  • H01L21/30612—Etching of AIIIBV compounds
  • H01L21/30621—Vapour phase etching
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3105—After-treatment
  • H01L21/311—Etching the insulating layers by chemical or physical means
  • H01L21/31105—Etching inorganic layers
  • H01L21/31111—Etching inorganic layers by chemical means
  • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67017—Apparatus for fluid treatment
  • H01L21/67063—Apparatus for fluid treatment for etching
  • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67242—Apparatus for monitoring, sorting or marking
  • H01L21/67248—Temperature monitoring
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67109—Apparatus for thermal treatment mainly by convection
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
  • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Definitions

• the present invention relates to a dry non-plasma treatment system ana method for treating a substrate to remove oxide and more particularly to a dry non- plasma t r eatment system and method for chemical and thermal treatment of a substrate Desc ⁇ pi on of Related Art
• pattern etching comprises the application of a thin layer of light-sensitive material, such as photoresist to an upper surface of a substrate, that is subsequently patterned in order to provide a mask for ransfemng this pattern to the underlying thin film during etching
• the patterning of the isght-sensitive materia! generally involves exposure by a radiation source through a reticle (ana associated optics) of the hght-sensitive materia! using, for example, a mscro-hthography system followed by the removal of the irradiated regions of the hght-se ⁇ si ⁇ ive materia!
• muSti-iayer and hard masks can be implemented for etching features m a :hs ⁇ film
• the mask pattern in the light-sensitive layer is transferred to the hard mask layer using a separate etch step preceding the mam etch step for the thin film
• the hard mask can for example be selected from several materials for silicon processing including silicon dioxide (SiO 2 ), silicon nitride (SIaN 4 ), and carbon, for example
• the hard mask can be t ⁇ m?r ⁇ laterally using, for example, a two-step process involving a chemical treatment of the exposed surfaces of the hard mask layer m order to alter the surface chemistry of the hard mask layer, and a post treatment of the exposed surfaces of the hard masK layer order to desorb the altered surface chemistry
• the present invention relates to a dry non-plasma treatment system and method for treating a substrate, and to a dry non-plasma treatment system and method tor cnemically and inermaily treating a substrate
• the treatment system for removing oxsde mate ⁇ al on a substrate comprises a temperature controlled process chamber configured to contain the substrate having tne oxide materia! thereon
• a temperature controlled substrate holder ss mounted within the process chamber, and configured to be substantially thermally Isolated from the process chamber and configured to support the substrate.
• a vacuum pumping system is coupled to the process chamber.
• a chemical treatment system is coupled to the process chamber and configured to introduce a process gas comprising as incipient ingredients HF and optionally ammonia (NiHs) to the process chamber, wherein the process gas chemically alters exposed surface layers on the substrate.
• a thermal treatment system is coupled to the process chamber and configured to elevate the temperature of the substrate, wherein the elevated temperature causes evaporation of the chemically altered surface layers.
• a controller configured to control the amount of the process gas introduced to the substrate, and the temperature to which the substrate is set.
• a method and computer readable medium for removing oxide material on a substrate comprises disposing the substrate having the oxide material on a substrate holder in a process chamber.
• the substrate is chemically treated by exposing the substrate to a gas composition comprising as incipient ingredients HF and optionally ammonia (NH 3 ), while using the substrate holder to set the temperature of the substrate to a chemical treatment temperature less than 100 degrees C.
• the substrate is thermally treated by heating the substrate to a temperature above the chemical treatment temperature.
• FIG. 1 presents a block diagram of a dry non-plasma treatment system for performing a chemical oxide removal process according to an embodiment of the present invention
• FIG. 2 presents a dry non-plasma treatment system for performing a dry, non- plasma chemical removal process according to another embodiment of the present invention
• FIGs. 3A and 3B present a substrate holder for performing a dry, non-piasma chemical removal process according to another embodiment of the present invention
• FlGs. 4A and 4B present a substrate holder for performing a dry, non-plasma chemica! removal process according to another embodiment of the present invention.
• FlG. 5 presents a flow chart of a method of performing a dry, non-plasma chemical removai process according to an embodiment of the present invention.
• FIG. 1 presents a treatment system 101 for processing a substrate using a dry, non-plasma, treatment process, such as a chemica! oxide removal process, to, for example, trim an oxide mask or remove native oxide or remove a SiO x -containing residue.
• the treatment system 101 is configured to facilitate a chemica! treatment process during which oxide material on the substrate is chemically altered and a thermal treatment process during which chemically altered substrate materia! is desorbed.
• FIG. 1 presents a block diagram of a treatment system 101 for treating the oxide material on a substrate.
• Treatment system 101 includes a process chamber 110 configured to process the substrate, a chemical treatment system 120 coupled to the process chamber 110 and configured to introduce a process gas to the substrate mounted in process chamber 110, a thermal treatment system 130 coupled to process chamber 110 and configured to elevate the temperature of the substrate, and a controller 150 coupled to the process chamber 110.
• the chemica! treatment system 120 and the thermal treatment system 130 and configured to control the treatment system 101 according to a process recipe.
• the chemical treatment system 120 is configured to introduce a process gas comprising a first gaseous component having as an incipient ingredient HF and an optional second gaseous component having as an incipient ingredient ammonia ⁇ NH 3 ).
• the two gaseous components may be introduced together, or independently of one another. For example, independent gas/Vapor delivery
• RJ : STi ⁇ sS4764.i systems may be used to introduce each gaseous component.
• the chemical treatment system 120 can further include a temperature control system for elevating the temperature of the vapor delivery system in order to prevent the condensation of process vapor therein.
• either gaseous component, or both can be introduced with a carrier gas, such as an inert gas.
• the inert gas can comprise a noble gas, such as argon.
• other gasses can also be included in the process gas.
• the chemical treatment of the oxide material on the substrate by exposing this material to the two gaseous components causes a chemical alteration of the oxide material surface to a self-limiting depth.
• the substrate temperature can be controlled. For example, the substrate temperature can be set to a chemical treatment temperature less than 100 degrees C.
• the thermal treatment system 130 can elevate the temperature of the substrate to a temperature above the chemical treatment temperature, or a temperature range from approximately 50 degrees C to approximately 450 degrees C, and desirably, the substrate temperature can range from approximately 100 degrees C to approximately 300 degrees C.
• ⁇ ne substrate temperature may range from approximately 100 degrees C to approximately 200 degrees C.
• the thermal treatment of the chemically altered oxide surface layers causes the evaporation of these surface layers.
• Controller 150 Includes a microprocessor, memory, and a digital I/O port (potentially including D/A and/or A/D converters) capable of generating control voltages sufficient to communicate and activate inputs to the process chamber 110, the chemical treatment system 120 and the thermal treatment system as well as monitor outputs from these systems.
• a program stored in the memory is utilized to interact with the systems 120 and 130 according to a stored process recipe.
• controller 150 can be coupled to a one or more additional controllers/computers (not shown), and controiSer 150 can obtain setup and/or configuration information from an additional controller/computer.
• singular processing elements 120 and 130 are shown, but this is not required for the invention.
• the processing system 101 can comprise any number of processing elements having any number of controllers associated with them in addition to independent processing elements.
• the controller 150 can be used to configure any number of processing elements (120 and 130), and the controller 150 can collect provide, process store, and dssplay data from processing elements
• the controller 150 can comprise a number of applications for controlling one or more of the processing elements
• controller 150 can include a graphic user interface (GUI) component (not shown) that can provide easy to use interfaces that enable a user to monitor and/or conirol one or more processing elements
• GUI graphic user interface
• the processing system 101 can also comp ⁇ se a pressure control system mot shown)
• the pressure control system can be coupled to the processing chamber 110, but this is not required
• the pressure control system can be configured differently and coupled differently
• the pressure control system can include one or more pressure valves (not shown) for exhausting the processing chamber 1 10 and/or for regulating the pressure within the processing chamber 110
• the pressure control system can also include one or more pumps ⁇ not shown) For example, one pump may be used to increase tne pressure within the processing chamber, and another pump may be used to evacuate the processing chamber 110
• the pressure control system can comp ⁇ se seals for sealing the processing chamber
• the treatment system 101 can comp ⁇ se an exhaust control system
• the exhaust control system can be coupled to the processing chamber 110, but this is not required
• the exhaust control system can Pe configured differently and coupled differently
• the exhaust control system can include an exhaust gas collection vessel (not shown) and can be used to remove contaminants from the processing fluid
• the exhaust control system can Pe used to recycle the processing fluid
• the treatment system 200 comprises a treatment chamber 210, a temperature controlled substrate holder 220 configured to be substantially thermally isolated from the treatment chamber 210 and configured to support a substrate 225, a vacuum pumping system 250 coupled to the treatment chamber 210 to evacuate the treatment chamber 210, a chemical distribution system 240 coupled to treatment chamber 210 and configured to introduce a process gas into a process space 245 in order to chemically treat substrate 225, and a radiative heating system 230 coupled to treatment chamber 210 and configured to thermaiiy treat substrate 225
• Substrate 225 can be ransferre ⁇ info and out of treatment chamber 210 through via a substrate transfer system v iot shown) through a transfer opening (not shown)
• Tne cnemscai distribution system 240 is configured to introduce a process gas cor( s gured to for example, chemically after oxide materia!
• the chen.ca distribution system 240 is configured to introduce one or more process gases snc.udsng, out not limited to, HF, NH 3 , N 2 , H 2 O 2 CO, GCX NO NO 2 , N 2 O, C x Py (wrere x y are integers) C X H Z F V (where x, y, z are integers), etc
• :ie orocess cas can comprise a first gaseous component having as an incipient ngredient ⁇ F and an optional second gaseous component having as ar incipient 'ngred ⁇ e n t ammonia (MH 3 )
• the two gaseous components may be introduced togetner or n ⁇ ependentiy of one another using a gas supply system 242
• independent gas/vapor supply systems may be used to introduce each gaseous corDonent
• the chemical distribution system 240 can furthe r include a terroerature control system for elevating the temperature of the chemical
• Heat lamps arranged in groups of one or more lamps, may be utilized to spatially adjust the heating of substrate 225.
• the radiative heating system 230 further comprises a window that Is configured to preserve the vacuum conditions in process chamber 210 and that is substantially transparent to infrared (IR) electromagnetic (EM) radiation.
• the window may comprise quartz or desirably sapphire.
• the window when fabricated of quartz may be consumed in the dry non- plasma process, the thickness may be selected to be sufficiently thick to reduce the frequency of its replacement and the associated replacement costs.
• the substrate holder 220 comprises a substrate temperature control system 280 configured to perform at least one of monitoring, adjusting or controlling or a combination of two or more thereof, the temperature of substrate holder 220 or substrate 225 or both.
• the substrate holder 220 and substrate temperature control system 260 may comprise a substrate clamping system (i.e., electrical or mechanical clamping system) to improve thermal contact between substrate 225 and substrate hoider 220, a heating system, a cooling system, a substrate backside gas supply system for improved thermal conductance between the substrate 225 and the substrate holder 220, a temperature sensor, etc.
• a substrate clamping system i.e., electrical or mechanical clamping system
• the substrate holder 220 comprises a substrate Sift system 262 including a lift pin assembly (not shown) capable of raising and lowering three or more lift pins in order to vertically transfer substrate 225 to and from an upper surface of the substrate hoider 220 and a transfer plane in the process chamber 210, and to vertically transfer substrate 225 to and from an upper surface of the substrate hoider 220 and a heating plane in the process chamber 210.
• the substrate holder 220 can comprise a backside gas supply system 264 configured to supply gas to the backside of substrate 225.
• substrate 225 rests on substrate holder 220 and the temperature is controlled to a chemical treatment temperature less than approximately 100 degrees C while the substrate 225 is exposed to process gas configured to chemically alter oxide material on substrate 225.
• substrate 225 may be clamped to the substrate holder 220 and a flow of backside gas can be initiated from a backside gas suppiy
• the temperature of substrate 225 is elevated using radiative heating system 230 in order to desorb the chemically altered oxide materiai.
• the substrate 225 can be raised above substrate holder 220 and displaced from the substrate holder 220 to the heating plane using substrate lift system 262 by a distance sufficient to substantially thermally decouple the substrate 225 from substrate holder 220.
• the substrate 225 may be lifted to close proximity with the radiative heating system 230 in order to reduce the extent to which other chamber components see the radiative heating system 230 during heating.
• substrate 225 is heated while other chamber components are not.
• an optional flow of purge gas from backside gas supply system 264 can be conducted in order to reduce contamination of the backside of substrate 225 during the desorption process.
• a substrate holder assembly 300 Is depicted according to another embodiment.
• the substrate holder assembly 300 comprises substrate holder 320 configured to support substrate 325 and configured to be coupled to process chamber 310.
• the substrate holder assembly 300 further comprises an electrostatic clamping (ESC) system 380 having a clamp electrode 382 configured to electrically clamp substrate 225 to substrate holder 220.
• ESC electrostatic clamping
• the substrate holder assembly 300 comprises a substrate temperature control system 360.
• the substrate temperature control system 380 includes a heat exchanger configured to circulate a heat transfer fluid through a fluid channel 366 disposed in substrate hoider 320 by supplying the heat transfer fluid through an inlet fluid supply Sine 362 and receiving the heat transfer fluid through an outlet fluid supply line 364. By adjusting the fluid temperature in the heat exchanger, the temperature of substrate holder 320 can be adjusted. Although only a single zone fluid circulation system is shown, the circulation system may comprise multiple fluid zones.
• the substrate holder assembly 300 comprises a substrate lift system 370 including a lift pin assembly capable of raising and lowering three or
• substrate lift pins 372 can be coupled to a common lift pin element, and can be lowered to below the upper surface of substrate holder 320.
• a drive mechanism utilizing, for example, an electric drive system (having an electric stepper motor and threaded rod) or a pneumatic drive system (having an air cylinder), provides means for raising and lowering the common lift pin element
• Substrate 325 can be transferred into and out of process chamber 310 through a gate valve (not shown) and chamber feed-through passage, aiigned on the transfer plane, via a robotic transfer system (not shown), and received by the substrate lift pins.
• the substrate 325 Once the substrate 325 is received from the transfer system, it can be lowered to the upper surface of the pedestal 320 by lowering the substrate lift pins 372 (see FIGs. 3A and 4A).
• the substrate 325 may be raised above substrate holder 320 during the heating of substrate 325 (see FiGs. 3B and 4B).
• the substrata lift pins 372 may comprise pin caps 374 fabricated from a thermally insulating material such as quartz or sapphire, in order to thermally decouple the substrate 325
• substrate holder assembly 320 comprises a backside gas supply system 364 configured to supply a heat transfer gas ; or a purge gas : or both to the backside of substrate 325.
• a backside gas supply system 364 configured to supply a heat transfer gas ; or a purge gas : or both to the backside of substrate 325.
• the substrate 325 can be clamped to substrate holder 320 using ESC system 380 while the backside gas supply system 364 supplies heat transfer gas, such as helium, to ihe backside of substrate 325 in order to improve the thermal contact between substrate 325 and substrate holder 320 (see FIGs. 3A and 4A).
• the substrate temperature control system can then be utilized to adjust the temperature of substrate 325.
• the substrate 325 can be raised above the substrate holder using the substrate lift system 370 while the backside gas supply system 364 supplies a purge gas flow 390 io the backside of substrate 325 in order to reduce contamination of the substrate backside (see FIGs, 3B and 4B).
• substrate 325 rests on substrate holder 320 and the temperature is controlled to a chemical treatment temperature less than approximately 100 degrees C while the substrate 325 is exposed to process gas configured to chemically alter oxide material on substrate
• substrate 325 may be damped to the substrate holder 320 using ESC system 380 and a flow of backside gas can be initiated from backside gas supply system 364 in order to affect improved thermal conductance between the substrate 325 and the substrate holder 320 (see FIGs. 3A and 4A).
• the temperature of substrate 325 is elevated using a radiative heating system 330 above substrate 325 in order to desorb the chemically altered oxide material.
• the substrate 325 can be raised above subsirate holder 320 and displaced from the substrate holder 320 using substrate lift system 362 by a distance sufficient to substantially thermally decouple the substrate 325 from substrate holder 320. Furthermore, the substrate 325 may be lifted to close proximity with the radiative heating system 330 in order to reduce the extent to which other chamber components see the radiative heating system 330 during heating. Preferably, substrate 325 is heated while other chamber components are not. Additionally, when substrate 325 is raised above substrate holder 320, an optional flow of purge gas from backside gas supply system 364 can be conducted in order to reduce contamination of the backside of substrate 325 during the desorption process (see FiGs. 3B and 4B).
• a radiation shield 332 may be utilized to reduce the heating of other chamber components during the heating of substrate 325.
• Substrate 325 can, for example, be lifted to close proximitiy with the bottom of radiation shield 332.
• the radiation shield 332 may comprise one or more openings 334 In order to permit the passage of gaseous material originating from substrate 325 during heating.
• a purge gas such as an inert gas (e.g., a noble gas, N?, etc.), can be introduced to the space enclosed by radiation shield 332, substrate 325 and radiative heating system 330 during thermal treatment of substrate 325.
• the radiation shield may be coupled to the upper portion of process chamber 310.
• the radiation shield may be a bare metal shield or a ceramic shield, or it may be an anodized metal shield or coated metal shield, for example.
• vacuum pumping system 250 can comprise a vacuum pump and a gate valve for adjusting the chamber pressure.
• Vacuum pumping system 250 can, for example, include a turbo-moiecuiar vacuum pump (TMP) capable of a pumping speed up to about 5000 liters per second (and greater).
• TMP turbo-moiecuiar vacuum pump
• the IMP can be a Seiko STP-A803 vacuum pump, or an Ebara ETI 301VV vacuum pump.
• TMPs are usefu! for low pressure processing, typically less than about 50 mTorr.
• high pressure i.e., greater than about 100 mTorr
• low throughput processing i.e., no gas flow
• a mechanical booster pump and dry roughing pump can be used.
• treatment system 200 can further comprise a controller 270 having a microprocessor, memory, and a digital I/O port capable of generating control voltages sufficient to communicate and activate inputs to treatment system 200 as well as monitor outputs from treatment system 200 such as temperature and pressure sensing devices.
• controller 270 can be coupled to and can exchange information with substrate holder 220, chemical distribution system 240, gas supply system 242, radiative heating system 230, vacuum pumping system 250, substrate temperature control system 260, substrate sift system 282. and backside gas supply system 264.
• a program stored in the memory can be utilized to activate the inputs to the aforementioned components of treatment system 200 according to a process recipe.
• controller 270 Is a DELL PRECISION WORKSTATION 610TM , available from Deli Corporation, .Austin, Texas.
• the controller 270 may also be implemented as a general purpose computer, processor, digital signal processor, etc., which causes a substrate processing apparatus to perform a portion or ail of the processing steps of the invention in response to the controller 290 executing one or more sequences of one or more instructions contained in a computer readable medium.
• the computer readable medium or memory for holding instructions programmed according to the teachings of the invention and for containing data structures, tables, records, or other data described herein. Examples of computer readable media are compact discs, hard disks, floppy disks, tape, magneto-optical disks, PROMs (EPROM, EEPROM.
• flash EPROM DRAM
• SRAM SRAM
• SDRAM Secure Digital Random Access Memory
• any other magnetic medium compact discs (e.g., CD-ROM), or any other optical medium, punch cards, paper tape, or other physical medium with patterns of holes, a carrier wave, or any other medium from which a computer can read.
• the controller 270 may be locally located relative to the treatment system 200. or it may be remotely located relative to the treatment system 200 via an internet or intranet. Thus, the controller 270 can exchange data with the treatment system 200 using at least one of a direct connection, an intranet, and the internet.
• the controller 270 may be coupled to an intranet at a customer site (i.e., a device maker, etc.), or coupled to an intranet at a vendor site (i.e., an equipment manufacturer).
• another computer i.e., controller, server, etc.
• controller 270 can access controller 270 to exchange data via at least one of a direct connection, an intranet, and the internet.
• the treatment process can, for example, include a process for removing oxide material on the substrate.
• the dry, non-piasma treatment process includes a chemical process during which exposed surfaces of a substrate having an oxide material are chemically treated by a process gas comprising HF. or ammonia (NHs), or both HF and NH 3 as incipient ingredients. Exposure to incipient HF and/or NH 3 can remove oxide material, such as oxidized silicon (or SiO x ), and/or consume oxide materia! by displacing such material with a chemically treated material. The self limiting feature results from a reduced rate of removal and/or chemical altering of the oxide material as exposure to the process material proceeds.
• a desorption process is performed in order to remove the chemically altered surface layers. Due to the self- limiting feature of the chemical treatment process, it may be desirable to aiternatingiy perform the non-piasma etch and subsequent desorption process, which can ailow precise control of the removal process.
• the desorption process can comprise a thermal treatment process within which the temperature of the substrate is raised sufficiently high to permit the volatilization of the chemically altered surface layers.
• the method includes a flow chart 500 beginning in step 510 with disposing the substrate in a treatment system configured to facilitate the chemical and desorption processes.
• the treatment system comprises one of the systems described in FIGs. 1 or 2.
• oxide material on the substrate is chemically treated.
• each constituent of the process gas may be introduced together (i.e., mixed), or separately from one another (i.e., HF introduced independently from NH 3 ).
• the process gas can further include an inert gas, such as a noble gas (i.e., argon).
• the inert gas may be introduced with either the HF or the NH 3 , or it may be introduced independently
• the process pressure may be selected to affect the amount of oxide material removed.
• the process pressure can range from approximately 1 mtorr to approximately 100 torr.
• the substrate temperature may be selected to affect the amount of oxide materia! removed.
• the substrate temperature can range from approximately 10 degrees C to approximately 200 degrees C, or the substrate temperature can be iess than 100 degrees C.
• the temperature can range from approximately 10 degrees C to 50 degrees C. Further details regarding the setting of the substrate temperature in order to control the removal amount is described in pending US Patent Application Serial No. 10/817,417, entitled “Method and System For Performing a Chemical Oxide Removal Process", the entire contents of which are herein incorporated by reference in their entirely.
• step 530 chemically altered oxide material on the substrate is thermally treated.
• the substrate temperature can be elevated above approximately 50 degrees C, or above approximately 100 degrees C.
• an inert gas may be introduced during the thermal treatment of the substrate.
• the inert gas may include a noble gas or nitrogen.
• the process chamber can be configured for a temperature ranging from about 10° to about 450 0 C. Alternatively, the chamber temperature can range from about 30° to about 60° C.
• the temperature for the substrate can range from approximately 10° to about 450° C. Alternatively, the substrate temperature can range form about 30° to about 60° C.
• part of or ail of an oxide film is removed on the substrate using a chemical oxide removal process
• pan of or all of an oxide film is trimmed on a substrate using a chemical oxide removal process.
• the oxide film can comprise

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