CN101473419B - 干式非等离子体处理系统和使用方法 - Google Patents

干式非等离子体处理系统和使用方法 Download PDF

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Publication number
CN101473419B
CN101473419B CN2007800233480A CN200780023348A CN101473419B CN 101473419 B CN101473419 B CN 101473419B CN 2007800233480 A CN2007800233480 A CN 2007800233480A CN 200780023348 A CN200780023348 A CN 200780023348A CN 101473419 B CN101473419 B CN 101473419B
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substrate
temperature control
treatment
chemical
treatment system
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Chinese (zh)
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CN101473419A (zh
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马丁·肯特
埃里克·J·施特朗
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/08—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means
    • B05B12/12—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means responsive to conditions of ambient medium or target, e.g. humidity, temperature position or movement of the target relative to the spray apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/02—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery
    • B05B12/04—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery for sequential operation or multiple outlets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
    • B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN2007800233480A 2006-06-22 2007-04-26 干式非等离子体处理系统和使用方法 Active CN101473419B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/425,883 US7718032B2 (en) 2006-06-22 2006-06-22 Dry non-plasma treatment system and method of using
US11/425,883 2006-06-22
PCT/US2007/067479 WO2007149627A2 (en) 2006-06-22 2007-04-26 A dry non-plasma treatment system and method of using

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2011100817343A Division CN102176408B (zh) 2006-06-22 2007-04-26 干式非等离子体处理系统和使用方法

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CN101473419A CN101473419A (zh) 2009-07-01
CN101473419B true CN101473419B (zh) 2011-05-25

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CN2011100817343A Active CN102176408B (zh) 2006-06-22 2007-04-26 干式非等离子体处理系统和使用方法

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US (4) US7718032B2 (enExample)
JP (2) JP5528106B2 (enExample)
KR (1) KR101375966B1 (enExample)
CN (2) CN101473419B (enExample)
WO (1) WO2007149627A2 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7795148B2 (en) * 2006-03-28 2010-09-14 Tokyo Electron Limited Method for removing damaged dielectric material
US7718032B2 (en) * 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
JP4939864B2 (ja) * 2006-07-25 2012-05-30 東京エレクトロン株式会社 ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
JP4776575B2 (ja) * 2007-03-28 2011-09-21 株式会社東芝 表面処理方法、エッチング処理方法および電子デバイスの製造方法
US20090035916A1 (en) * 2007-08-03 2009-02-05 Kim Jung Nam Method for manufacturing semiconductor device having fin gate
US8287688B2 (en) * 2008-07-31 2012-10-16 Tokyo Electron Limited Substrate support for high throughput chemical treatment system
US8303715B2 (en) * 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput thermal treatment system and method of operating
US8323410B2 (en) * 2008-07-31 2012-12-04 Tokyo Electron Limited High throughput chemical treatment system and method of operating
US8303716B2 (en) * 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput processing system for chemical treatment and thermal treatment and method of operating
US8115140B2 (en) * 2008-07-31 2012-02-14 Tokyo Electron Limited Heater assembly for high throughput chemical treatment system
JP5356522B2 (ja) * 2008-07-31 2013-12-04 東京エレクトロン株式会社 化学処理及び熱処理用高スループット処理システム及びその動作方法
JP2012089805A (ja) * 2010-10-22 2012-05-10 Toshiba Corp エッチング装置およびエッチング方法
KR101946296B1 (ko) * 2011-11-28 2019-04-26 삼성전자 주식회사 반도체 장치의 제조 방법
JP5964626B2 (ja) * 2012-03-22 2016-08-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
WO2013175872A1 (ja) * 2012-05-23 2013-11-28 東京エレクトロン株式会社 ガス処理方法
JP6435667B2 (ja) * 2014-07-01 2018-12-12 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
US10373850B2 (en) * 2015-03-11 2019-08-06 Asm Ip Holding B.V. Pre-clean chamber and process with substrate tray for changing substrate temperature
WO2016210299A1 (en) 2015-06-26 2016-12-29 Tokyo Electron Limited GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING ARC OR SILICON OXYNITRIDE TO DIFFERENT FILMS OR MASKS
CN107851559B (zh) * 2015-06-26 2022-04-26 东京毅力科创株式会社 气相蚀刻系统和方法
CN114879456A (zh) * 2015-12-25 2022-08-09 中微半导体设备(上海)股份有限公司 一种晶片处理系统
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US10460977B2 (en) * 2016-09-29 2019-10-29 Lam Research Corporation Lift pin holder with spring retention for substrate processing systems
JP6796559B2 (ja) * 2017-07-06 2020-12-09 東京エレクトロン株式会社 エッチング方法および残渣除去方法
EP3450809A1 (de) * 2017-08-31 2019-03-06 VAT Holding AG Verstellvorrichtung mit spannzangenkupplung für den vakuumbereich
JP7018801B2 (ja) * 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
CN110942987A (zh) * 2018-09-21 2020-03-31 长鑫存储技术有限公司 一种半导体结构的形成方法
CN114207787A (zh) 2019-08-23 2022-03-18 东京毅力科创株式会社 对交替的金属和电介质具有可调选择性的含钛材料层非等离子体刻蚀
DE102019218727A1 (de) * 2019-12-03 2021-06-10 Robert Bosch Gmbh Vorrichtung und verfahren zum bearbeiten mindestens eines halbleiter-substrates
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CN112992759B (zh) * 2020-10-16 2022-04-19 重庆康佳光电技术研究院有限公司 一种器件转移设备及其制备方法、器件转移方法
CN114904692B (zh) * 2022-05-27 2023-07-28 苏州光宝科技股份有限公司 一种带有自辨别自检测效果的高精度晶圆喷涂设备
CN119678243A (zh) * 2023-07-21 2025-03-21 株式会社日立高新技术 半导体制造装置以及晶片温度控制方法
JP7607367B1 (ja) 2023-11-10 2024-12-27 ヴイエム インコーポレイテッド シャローエッチングプロセスチャンバ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5776557A (en) * 1987-03-18 1998-07-07 Kabushiki Kaisha Toshiba Method for forming a film on a substrate by activating a reactive gas
US5802856A (en) * 1996-07-31 1998-09-08 Stanford University Multizone bake/chill thermal cycling module
US6026764A (en) * 1994-12-16 2000-02-22 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition

Family Cites Families (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3175576D1 (en) 1980-12-11 1986-12-11 Toshiba Kk Dry etching device and method
KR900002143B1 (ko) 1985-03-29 1990-04-02 미쯔비시 덴끼 가부시기가이샤 덕트식 멀티조온 공조시스템
JPH0834205B2 (ja) 1986-11-21 1996-03-29 株式会社東芝 ドライエツチング装置
DE68928402T2 (de) * 1988-12-27 1998-03-12 Toshiba Kawasaki Kk Verfahren zur Entfernung einer Oxidschicht auf einem Substrat
TW204411B (enExample) 1991-06-05 1993-04-21 Tokyo Electron Co Ltd
US5273588A (en) 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
JPH0610144A (ja) * 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
US5282925A (en) 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
JPH0799162A (ja) * 1993-06-21 1995-04-11 Hitachi Ltd Ｃｖｄリアクタ装置
US5622639A (en) 1993-07-29 1997-04-22 Tokyo Electron Kabushiki Kaisha Heat treating apparatus
JPH0786174A (ja) 1993-09-16 1995-03-31 Tokyo Electron Ltd 成膜装置
KR960002534A (ko) 1994-06-07 1996-01-26 이노우에 아키라 감압·상압 처리장치
US5733426A (en) 1995-05-23 1998-03-31 Advanced Micro Devices, Inc. Semiconductor wafer clamp device and method
US5822925A (en) * 1995-11-07 1998-10-20 Maytag Corporation Hook-mounted hinge mechanism for oven doors
US5758324A (en) * 1995-12-15 1998-05-26 Hartman; Richard L. Resume storage and retrieval system
US5876879A (en) 1997-05-29 1999-03-02 International Business Machines Corporation Oxide layer patterned by vapor phase etching
US6074951A (en) 1997-05-29 2000-06-13 International Business Machines Corporation Vapor phase etching of oxide masked by resist or masking material
US5838055A (en) 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
US6258170B1 (en) 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6527865B1 (en) 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
JP4124543B2 (ja) * 1998-11-11 2008-07-23 東京エレクトロン株式会社 表面処理方法及びその装置
US6383300B1 (en) 1998-11-27 2002-05-07 Tokyo Electron Ltd. Heat treatment apparatus and cleaning method of the same
US20020011216A1 (en) 1999-06-04 2002-01-31 Tue Nguyen Integral susceptor-wall reactor system and method
KR100338768B1 (ko) * 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
US6284006B1 (en) 1999-11-15 2001-09-04 Fsi International, Inc. Processing apparatus for microelectronic devices in which polymeric bellows are used to help accomplish substrate transport inside of the apparatus
US20010016226A1 (en) 1999-12-15 2001-08-23 International Business Machines Corporation Method for preparing the surface of a dielectric
WO2001050109A2 (en) 2000-01-05 2001-07-12 Tokyo Electron Limited Wafer band-edge measurement using spectroscopy and a process of uniform wafer temperature control
US6245619B1 (en) 2000-01-21 2001-06-12 International Business Machines Corporation Disposable-spacer damascene-gate process for SUB 0.05 μm MOS devices
EP1124252A2 (en) 2000-02-10 2001-08-16 Applied Materials, Inc. Apparatus and process for processing substrates
US6271094B1 (en) 2000-02-14 2001-08-07 International Business Machines Corporation Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance
AU2001247226A1 (en) 2000-03-20 2001-10-03 Tokyo Electron Limited High speed stripping for damaged photoresist
US6335261B1 (en) 2000-05-31 2002-01-01 International Business Machines Corporation Directional CVD process with optimized etchback
US20020015855A1 (en) 2000-06-16 2002-02-07 Talex Sajoto System and method for depositing high dielectric constant materials and compatible conductive materials
JP4672113B2 (ja) 2000-07-07 2011-04-20 東京エレクトロン株式会社 誘導結合プラズマ処理装置
KR20020037695A (ko) 2000-11-14 2002-05-22 히가시 데쓰로 기판 처리장치 및 기판 처리방법
US6926843B2 (en) 2000-11-30 2005-08-09 International Business Machines Corporation Etching of hard masks
JP4133333B2 (ja) * 2001-02-15 2008-08-13 東京エレクトロン株式会社 被処理体の処理方法及びその処理装置
US20020195201A1 (en) 2001-06-25 2002-12-26 Emanuel Beer Apparatus and method for thermally isolating a heat chamber
US6818493B2 (en) * 2001-07-26 2004-11-16 Motorola, Inc. Selective metal oxide removal performed in a reaction chamber in the absence of RF activation
US6540556B1 (en) * 2001-12-17 2003-04-01 Speed Tech Corp. Electric connector
JP2003282530A (ja) * 2002-03-26 2003-10-03 Hitachi Kokusai Electric Inc 基板処理装置、及び半導体装置の製造方法
US20050142885A1 (en) * 2002-08-30 2005-06-30 Tokyo Electron Limited Method of etching and etching apparatus
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
JP2004221155A (ja) * 2003-01-10 2004-08-05 Tokyo Electron Ltd 酸化膜の除去方法、加熱方法、及び処理装置
US6951821B2 (en) 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
US7079760B2 (en) * 2003-03-17 2006-07-18 Tokyo Electron Limited Processing system and method for thermally treating a substrate
US20040182315A1 (en) 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
US7877161B2 (en) 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
US7029536B2 (en) 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
KR100498494B1 (ko) * 2003-04-08 2005-07-01 삼성전자주식회사 회전 이동 방식의 원격 플라즈마 강화 세정 장치
US7611995B2 (en) 2003-04-22 2009-11-03 Tokyo Electron Limited Method for removing silicon oxide film and processing apparatus
US20050218113A1 (en) 2004-03-30 2005-10-06 Tokyo Electron Limited Method and system for adjusting a chemical oxide removal process using partial pressure
US20050227494A1 (en) 2004-03-30 2005-10-13 Tokyo Electron Limited Processing system and method for treating a substrate
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7049612B2 (en) * 2004-03-02 2006-05-23 Applied Materials Electron beam treatment apparatus
US20050211264A1 (en) 2004-03-25 2005-09-29 Tokyo Electron Limited Of Tbs Broadcast Center Method and processing system for plasma-enhanced cleaning of system components
US20050218114A1 (en) 2004-03-30 2005-10-06 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
US20050269291A1 (en) 2004-06-04 2005-12-08 Tokyo Electron Limited Method of operating a processing system for treating a substrate
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US7344983B2 (en) * 2005-03-18 2008-03-18 International Business Machines Corporation Clustered surface preparation for silicide and metal contacts
JP2005303329A (ja) * 2005-06-23 2005-10-27 Hitachi Ltd プラズマエッチング装置
US20070238301A1 (en) * 2006-03-28 2007-10-11 Cabral Stephen H Batch processing system and method for performing chemical oxide removal
JP2007266455A (ja) * 2006-03-29 2007-10-11 Tokyo Electron Ltd 基板処理装置、基板処理方法及び記憶媒体
US7718032B2 (en) * 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5776557A (en) * 1987-03-18 1998-07-07 Kabushiki Kaisha Toshiba Method for forming a film on a substrate by activating a reactive gas
US6026764A (en) * 1994-12-16 2000-02-22 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
US5802856A (en) * 1996-07-31 1998-09-08 Stanford University Multizone bake/chill thermal cycling module

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US9115429B2 (en) 2015-08-25
US8828185B2 (en) 2014-09-09
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