JP4842263B2 - Tera層を化学処理するための処理システムおよび方法 - Google Patents
Tera層を化学処理するための処理システムおよび方法 Download PDFInfo
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- JP4842263B2 JP4842263B2 JP2007520300A JP2007520300A JP4842263B2 JP 4842263 B2 JP4842263 B2 JP 4842263B2 JP 2007520300 A JP2007520300 A JP 2007520300A JP 2007520300 A JP2007520300 A JP 2007520300A JP 4842263 B2 JP4842263 B2 JP 4842263B2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
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Description
Claims (27)
- 基材上の可調エッチング速度ARC(TERA)層を処理する方法であって、
プラズマ促進化学蒸着(PECVD)システムを使用して、前記TERA層を前記基材の上に蒸着するステップと、
エッチングシステムを使用して、形状構成を前記TERA層の中に創出するステップであって、
前記基材の上にフォトレジスト層が設けられ、
前記フォトレジスト層の中へパターンが転写され、
前記フォトレジスト層を現像することによって、形状構成が前記フォトレジスト層の中に創出され、
エッチング処理を使用して、前記形状構成が前記TERA層の中へ転写される、
ステップと、
前記TERA層中の前記形状構成のサイズを縮小するステップであって、
トリミング量が決定され、
前記のTERA層中の形状構成の酸化された露出表面が、HFとNH3を有する非プラズマ酸化プロセスを用いることによって化学的に処理され、
前記トリミング量が前記非プラズマ酸化処理の制御に用いられ、
前記のTERA形状構成の酸化された部分は非プラズマ熱処理プロセスを用いることによって除去される、
ステップと、
を含む方法。 - 前記方法は、
前記PECVDシステム内部の処理チャンバ内の基材保持体の上に前記基材を位置決めするステップと、
処理ガスを前記処理チャンバに供給するステップとをさらに含み、前記処理ガスは、不活性ガスと、珪素含有前駆物質または炭素含有前駆物質の一方とをさらに含む、請求項1に記載の方法。 - 前記方法は、
上部電極表面と前記基材保持体の表面との間にギャップを確立するステップをさらに含み、前記PECVDシステムは前記処理チャンバに結合された上部電極を備え、前記基材保持体は並進装置を備える、請求項2に記載の方法。 - 前記ギャップは約10mmから約200mmの範囲にわたる、請求項3に記載の方法。
- 前記方法は、
第1のRF源を前記上部電極に結合するステップと、
前記第1のRF源を約0.1MHzから約200MHzの周波数域内で動作させるステップと、
前記第1のRF源を約10ワットから約10000ワットの電力域内で動作させるステップとをさらに含む、請求項3に記載の方法。 - 前記方法は、
第2のRF源を前記基材保持体に結合するステップと、
前記第2のRF源を約0.1MHzから約200MHzの周波数域内で動作させるステップと、
前記第2のRF源を約10ワットから約10000ワットの電力域内で動作させるステップとをさらに含む、請求項5に記載の方法。 - 前記方法は、
RF源を前記基材保持体に結合するステップと、
前記RF源を約0.1MHzから約200MHzの周波数域内で動作させるステップと、
前記RF源を約10ワットから約10000ワットの電力域内で動作させるステップとをさらに含む、請求項3に記載の方法。 - 前記珪素含有前駆物質は、モノシラン(SiH4)、テトラエチルオルソシリケート(TEOS)、モノメチルシラン(1MS)、ジメチルシラン(2MS)、トリメチルシラン(3MS)、テトラメチルシラン(4MS)、オクタメチルシクロテトラシロキサン(OMCTS)、ジメチルジメトキシシラン(DMDMOS)、またはテトラメチルシクロテトラシラン(TMCTS)、もしくはこれらの2つ以上の組合せを含む、請求項2に記載の方法。
- 前記炭素含有前駆物質は、CH4、C2H4、C2H2、C6H6、またはC6H5OH、もしくはこれらの2つ以上の組合せを含む、請求項2に記載の方法。
- 前記第1の処理ガスは、アルゴン、ヘリウム、または窒素、もしくはこれらの2つ以上の組合せを含む不活性ガスを包含する、請求項2に記載の方法。
- 前記TERA層は、SiOH材料、またはSiCH材料、もしくはこれらの組合せを含む、請求項1に記載の方法。
- 前記TERA層は、248nm、193nm、または157nmの少なくとも1つの波長で測定されるときに約1.5から約2.5の範囲にわたる屈折率(n)を有し、かつ248nm、193nm、または157nmの少なくとも1つの波長で測定されるときに約0.10から約0.9の範囲にわたる吸光率(k)を有する材料を含む、請求項1に記載の方法。
- 前記方法は、
前記エッチングシステム中の処理チャンバ内の基材保持体の上に前記基材を位置決めするステップと、
酸素含有ガスおよび不活性ガスを含む処理ガスを前記処理チャンバに供給するステップと、
前記形状構成を前記TERA層の中に創出するためにプラズマを確立するステップとをさらに含む、請求項1に記載の方法。 - 前記方法はさらに、
トリミング量を決定するステップを含み、
前記TERA層中の前記形状構成の露出表面を酸化するステップを含み、前記トリミング量を使用して前記酸化処理を制御し、
前記TERA形状構成の前記酸化された部分を除去するステップを含み、前記除去処理は化学的酸化物除去(COR)処理を含む、請求項1に記載の方法。 - 前記方法はさらに、
処理ガスを供給することによって、CORモジュールを使用して前記形状構成の前記露出表面を化学的に処理するステップを含み、前記トリミング量にほぼ等しい厚みを有する固体反応生成物が、前記TERA層中の前記形状構成の前記酸化された露出表面の少なくとも1つの上に形成され、
前記固体反応生成物を蒸発させ、それによって前記トリミング量だけ前記TERA層中の前記形状構成の少なくとも1つをトリミングすることによって、後熱処理(PHT)モジュールを使用してPHT処理を実行するステップを含む、請求項14に記載の方法。 - 前記処理ガスは、酸素含有ガス、窒素含有ガス、フッ素含有ガス、または塩素含有ガス、もしくはこれらの2つ以上の組合せを含む、請求項15に記載の方法。
- 前記処理ガスはHFおよびNH3を含む、請求項16に記載の方法。
- 基材上の可調エッチング速度ARC(TERA)層を処理するためのシステムであって、
プラズマ促進化学蒸着(PECVD)システムを使用して、前記TERA層を前記基材の上に蒸着するための処理サブシステムと、
エッチングシステムを使用して、形状構成を前記TERA層の中に創出するための処理サブシステムであって、
前記基材の上にフォトレジスト層が設けられ、
前記フォトレジスト層の中へパターンが転写され、
前記フォトレジスト層を現像することによって、形状構成が前記フォトレジスト層の中に創出され、
エッチング処理を使用して、前記形状構成が前記TERA層の中へ転写される、
処理サブシステムと、
前記TERA層中の前記形状構成のサイズを縮小するための処理サブシステムであって、
トリミング量が決定され、
前記のTERA層中の形状構成の酸化された露出表面が、HFとNH3を有する非プラズマ酸化プロセスを用いることによって化学的に処理され、
前記トリミング量が前記非プラズマ酸化処理の制御に用いられ、
前記のTERA形状構成の酸化された部分は非プラズマ熱処理プロセスを用いることによって除去される、
処理サブシステムと、
を備えるシステム。 - 前記システムは、
前記PECVDシステム中の処理チャンバ内の基材保持体と、
処理ガスを前記処理チャンバに供給する手段とをさらに備え、前記処置ガスは、不活性ガスと、珪素含有前駆物質または炭素含有前駆物質、もしくはこれらの組合せとを含む、請求項18に記載のシステム。 - 前記システムは、
前記処理チャンバに結合された上部電極と、
上部電極表面と前記基材保持体の表面との間のギャップを確立するために前記基材保持体に結合された並進装置とをさらに備える、請求項19に記載のシステム。 - 前記ギャップは約10mmから約200mmの範囲にわたる、請求項20に記載のシステム。
- 前記システムは、
前記上部電極に結合された第1のRF源をさらに備え、前記第1のRF源は、約0.1MHzから約200MHzの周波数域内で動作し、かつ約10ワットから約10000ワットの電力域内で動作する、請求項19に記載のシステム。 - 前記システムは、
前記基材保持体に結合された第2のRF源をさらに備え、前記第2のRF源は約0.1MHzから約200MHzの周波数域内で動作し、かつ約10ワットから約10000ワットの電力域内で動作する、請求項22に記載のシステム。 - 前記システムは、
前記基材保持体に結合されたRF源をさらに備え、前記RF源は約0.1MHzから約200MHzの周波数域内で動作し、かつ約10ワットから約10000ワットの電力域内で動作する、請求項19に記載のシステム。 - 前記珪素含有前駆物質は、モノシラン(SiH4)、テトラエチルオルソシリケート(TEOS)、モノメチルシラン(1MS)、ジメチルシラン(2MS)、トリメチルシラン(3MS)、テトラメチルシラン(4MS)、オクタメチルシクロテトラシロキサン(OMCTS)、ジメチルジメトキシシラン(DMDMOS)、またはテトラメチルシクロテトラシラン(TMCTS)、もしくはこれらの2つ以上の組合せを含む、請求項19に記載のシステム。
- 前記炭素含有前駆物質は、CH4、C2H4、C2H2、C6H6、またはC6H5OH、もしくはこれらの2つ以上の組合せを含む、請求項19に記載のシステム。
- 前記第1の処理ガスは、アルゴン、ヘリウム、または窒素、もしくはこれらの2つ以上の組合せを含む不活性ガスを包含する、請求項19に記載のシステム。
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Families Citing this family (148)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7806126B1 (en) * | 2002-09-30 | 2010-10-05 | Lam Research Corporation | Substrate proximity drying using in-situ local heating of substrate and substrate carrier point of contact, and methods, apparatus, and systems for implementing the same |
US7029536B2 (en) * | 2003-03-17 | 2006-04-18 | Tokyo Electron Limited | Processing system and method for treating a substrate |
US20070048456A1 (en) * | 2004-09-14 | 2007-03-01 | Keshner Marvin S | Plasma enhanced chemical vapor deposition apparatus and method |
JP4860219B2 (ja) * | 2005-02-14 | 2012-01-25 | 東京エレクトロン株式会社 | 基板の処理方法、電子デバイスの製造方法及びプログラム |
US7323401B2 (en) * | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
JP2007059705A (ja) * | 2005-08-25 | 2007-03-08 | Seiko Epson Corp | キャパシタおよびその製造方法、強誘電体メモリ装置の製造方法、アクチュエータの製造方法、並びに、液体噴射ヘッドの製造方法 |
JP4854317B2 (ja) | 2006-01-31 | 2012-01-18 | 東京エレクトロン株式会社 | 基板処理方法 |
US7662718B2 (en) * | 2006-03-09 | 2010-02-16 | Micron Technology, Inc. | Trim process for critical dimension control for integrated circuits |
US7795148B2 (en) * | 2006-03-28 | 2010-09-14 | Tokyo Electron Limited | Method for removing damaged dielectric material |
JP5015534B2 (ja) * | 2006-09-22 | 2012-08-29 | 財団法人高知県産業振興センター | 絶縁膜の成膜方法 |
US20080078743A1 (en) * | 2006-09-28 | 2008-04-03 | Munoz Andres F | Elevated temperature chemical oxide removal module and process |
US20080139003A1 (en) * | 2006-10-26 | 2008-06-12 | Shahid Pirzada | Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process |
JP2008181996A (ja) * | 2007-01-24 | 2008-08-07 | Tokyo Electron Ltd | 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びコンピュータ記憶媒体 |
JP4949091B2 (ja) * | 2007-03-16 | 2012-06-06 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記録媒体 |
US8980706B2 (en) * | 2008-09-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Double treatment on hard mask for gate N/P patterning |
KR101795658B1 (ko) * | 2009-01-31 | 2017-11-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 에칭을 위한 방법 및 장치 |
JP5655429B2 (ja) * | 2009-08-28 | 2015-01-21 | 三菱マテリアル株式会社 | 多結晶シリコンの製造方法、製造装置及び多結晶シリコン |
US20110151142A1 (en) * | 2009-12-22 | 2011-06-23 | Applied Materials, Inc. | Pecvd multi-step processing with continuous plasma |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
KR101341024B1 (ko) | 2010-06-11 | 2013-12-13 | 엘지디스플레이 주식회사 | 박막 패턴의 제조 방법과 그를 가지는 평판 표시 소자 |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
JP5955062B2 (ja) * | 2011-04-25 | 2016-07-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
KR101715460B1 (ko) * | 2012-06-08 | 2017-03-10 | 도쿄엘렉트론가부시키가이샤 | 가스 처리 방법 |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
CN104425222B (zh) * | 2013-08-28 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | 图形化方法 |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
WO2015079632A1 (ja) * | 2013-11-28 | 2015-06-04 | 株式会社Joled | 原子層堆積装置 |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9368364B2 (en) * | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
CN105826197A (zh) * | 2015-01-08 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法、电子装置 |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US9805747B2 (en) * | 2015-08-17 | 2017-10-31 | Western Digital Technologies, Inc. | Method for making a perpendicular magnetic recording write head with write pole having thin side gaps and thicker leading gap |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
KR20190035036A (ko) * | 2017-09-25 | 2019-04-03 | 삼성전자주식회사 | 박막 형성 장치 및 이를 이용한 비정질 실리콘 막 형성방법 |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US11871667B2 (en) | 2020-09-17 | 2024-01-09 | Applied Materials, Inc. | Methods and apparatus for warpage correction |
US20220139706A1 (en) * | 2020-11-02 | 2022-05-05 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001326224A (ja) * | 2000-02-28 | 2001-11-22 | Canon Sales Co Inc | 半導体装置及びその製造方法 |
WO2003044833A2 (en) * | 2001-11-20 | 2003-05-30 | International Business Machines Corporation | Method for limiting divot formation in post shallow trench isolation processes |
JP2003179064A (ja) * | 2001-12-10 | 2003-06-27 | Sony Corp | 配線パターンの形成方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4872947A (en) * | 1986-12-19 | 1989-10-10 | Applied Materials, Inc. | CVD of silicon oxide using TEOS decomposition and in-situ planarization process |
US6444137B1 (en) * | 1990-07-31 | 2002-09-03 | Applied Materials, Inc. | Method for processing substrates using gaseous silicon scavenger |
TW204411B (ja) * | 1991-06-05 | 1993-04-21 | Tokyo Electron Co Ltd | |
JPH07283216A (ja) | 1994-04-12 | 1995-10-27 | Sony Corp | Al系金属配線構造およびそのパターニング方法 |
WO1995034916A1 (fr) * | 1994-06-15 | 1995-12-21 | Seiko Epson Corporation | Fabrication d'un equipement a semi-conducteurs a couches minces, equipement a semi-conducteurs a couches minces, afficheur a cristaux liquides et equipement electronique |
US5656123A (en) * | 1995-06-07 | 1997-08-12 | Varian Associates, Inc. | Dual-frequency capacitively-coupled plasma reactor for materials processing |
US6391690B2 (en) * | 1995-12-14 | 2002-05-21 | Seiko Epson Corporation | Thin film semiconductor device and method for producing the same |
US5639345A (en) * | 1996-01-11 | 1997-06-17 | Taiwan Semiconductor Manufacturing Company Ltd. | Two step etch back process having a convex and concave etch profile for improved etch uniformity across a substrate |
US6013574A (en) * | 1996-01-30 | 2000-01-11 | Advanced Micro Devices, Inc. | Method of forming low resistance contact structures in vias arranged between two levels of interconnect lines |
US5661093A (en) * | 1996-09-12 | 1997-08-26 | Applied Materials, Inc. | Method for the stabilization of halogen-doped films through the use of multiple sealing layers |
US6124154A (en) * | 1996-10-22 | 2000-09-26 | Seiko Epson Corporation | Fabrication process for thin film transistors in a display or electronic device |
KR100497879B1 (ko) * | 1997-01-23 | 2005-09-08 | 동경 엘렉트론 주식회사 | 플라즈마처리장치 |
US6316167B1 (en) * | 2000-01-10 | 2001-11-13 | International Business Machines Corporation | Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof |
JP3567855B2 (ja) * | 2000-01-20 | 2004-09-22 | 住友電気工業株式会社 | 半導体製造装置用ウェハ保持体 |
US20020086547A1 (en) | 2000-02-17 | 2002-07-04 | Applied Materials, Inc. | Etch pattern definition using a CVD organic layer as an anti-reflection coating and hardmask |
US6573030B1 (en) * | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
US7087504B2 (en) * | 2001-05-18 | 2006-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device by irradiating with a laser beam |
JP4133810B2 (ja) | 2001-07-10 | 2008-08-13 | 東京エレクトロン株式会社 | ドライエッチング方法 |
DE10223954A1 (de) | 2002-05-29 | 2003-12-11 | Infineon Technologies Ag | Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren zum Abscheiden von Siliziumnitrid oder Siliziumoxinitrid, Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung |
US20040038537A1 (en) * | 2002-08-20 | 2004-02-26 | Wei Liu | Method of preventing or suppressing sidewall buckling of mask structures used to etch feature sizes smaller than 50nm |
US6794230B2 (en) * | 2002-10-31 | 2004-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Approach to improve line end shortening |
US6750127B1 (en) * | 2003-02-14 | 2004-06-15 | Advanced Micro Devices, Inc. | Method for fabricating a semiconductor device using amorphous carbon having improved etch resistance |
US20050106888A1 (en) * | 2003-11-14 | 2005-05-19 | Taiwan Semiconductor Manufacturing Co. | Method of in-situ damage removal - post O2 dry process |
-
2004
- 2004-07-06 US US10/883,784 patent/US7097779B2/en active Active
-
2005
- 2005-05-06 WO PCT/US2005/015925 patent/WO2006014193A1/en active Application Filing
- 2005-05-06 KR KR1020067020289A patent/KR101114615B1/ko not_active IP Right Cessation
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-
2006
- 2006-07-14 US US11/486,105 patent/US20060254716A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001326224A (ja) * | 2000-02-28 | 2001-11-22 | Canon Sales Co Inc | 半導体装置及びその製造方法 |
WO2003044833A2 (en) * | 2001-11-20 | 2003-05-30 | International Business Machines Corporation | Method for limiting divot formation in post shallow trench isolation processes |
JP2003179064A (ja) * | 2001-12-10 | 2003-06-27 | Sony Corp | 配線パターンの形成方法 |
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CN1973358B (zh) | 2010-05-12 |
KR101114615B1 (ko) | 2012-03-05 |
WO2006014193A1 (en) | 2006-02-09 |
US20060006136A1 (en) | 2006-01-12 |
CN1973358A (zh) | 2007-05-30 |
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TW200616039A (en) | 2006-05-16 |
TWI278018B (en) | 2007-04-01 |
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