JP2009528681A5 - - Google Patents

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Publication number
JP2009528681A5
JP2009528681A5 JP2008556571A JP2008556571A JP2009528681A5 JP 2009528681 A5 JP2009528681 A5 JP 2009528681A5 JP 2008556571 A JP2008556571 A JP 2008556571A JP 2008556571 A JP2008556571 A JP 2008556571A JP 2009528681 A5 JP2009528681 A5 JP 2009528681A5
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JP
Japan
Prior art keywords
particles
group
intermetallic
chalcogenide
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008556571A
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English (en)
Japanese (ja)
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JP2009528681A (ja
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Publication date
Priority claimed from US11/361,515 external-priority patent/US20070163640A1/en
Priority claimed from US11/361,498 external-priority patent/US20070163639A1/en
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/361,523 external-priority patent/US20070169811A1/en
Priority claimed from US11/361,464 external-priority patent/US20070169810A1/en
Priority claimed from US11/361,433 external-priority patent/US7700464B2/en
Priority claimed from US11/361,103 external-priority patent/US20070169809A1/en
Priority claimed from US11/395,668 external-priority patent/US8309163B2/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Priority claimed from US11/394,849 external-priority patent/US20070163641A1/en
Application filed filed Critical
Priority claimed from PCT/US2007/062764 external-priority patent/WO2007101136A2/en
Publication of JP2009528681A publication Critical patent/JP2009528681A/ja
Publication of JP2009528681A5 publication Critical patent/JP2009528681A5/ja
Pending legal-status Critical Current

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JP2008556571A 2006-02-23 2007-02-23 カルコゲンと金属間物質の使用による高処理能力の半導体層形成 Pending JP2009528681A (ja)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US11/361,523 US20070169811A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of thermal and chemical gradients
US11/361,464 US20070169810A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor
US11/361,433 US7700464B2 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US11/361,515 US20070163640A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US11/361,498 US20070163639A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from microflake particles
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/361,103 US20070169809A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides
US39619906A 2006-03-30 2006-03-30
US11/395,668 US8309163B2 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
US11/394,849 US20070163641A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
PCT/US2007/062764 WO2007101136A2 (en) 2006-02-23 2007-02-23 High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material

Publications (2)

Publication Number Publication Date
JP2009528681A JP2009528681A (ja) 2009-08-06
JP2009528681A5 true JP2009528681A5 (enExample) 2010-04-08

Family

ID=38459766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008556571A Pending JP2009528681A (ja) 2006-02-23 2007-02-23 カルコゲンと金属間物質の使用による高処理能力の半導体層形成

Country Status (3)

Country Link
EP (1) EP1998902A2 (enExample)
JP (1) JP2009528681A (enExample)
WO (1) WO2007101136A2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101144807B1 (ko) * 2007-09-18 2012-05-11 엘지전자 주식회사 태양전지 박막조성용 잉크와 그 제조방법, 이를 이용한ｃｉｇｓ 박막형 태양전지, 및 그 제조 방법
CN101471394A (zh) * 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
JP5185171B2 (ja) * 2009-03-24 2013-04-17 本田技研工業株式会社 薄膜太陽電池の光吸収層の形成方法
JP5213777B2 (ja) * 2009-03-26 2013-06-19 京セラ株式会社 薄膜太陽電池の製法
CN102712753B (zh) * 2009-11-20 2015-08-26 E·I·内穆尔杜邦公司 热稳定的且尺寸稳定的聚酰亚胺薄膜及与其相关的方法
JP2011138837A (ja) * 2009-12-26 2011-07-14 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
JP5495849B2 (ja) * 2010-02-25 2014-05-21 京セラ株式会社 半導体層の製造方法および光電変換装置の製造方法
KR101749137B1 (ko) * 2010-06-22 2017-06-21 영남대학교 산학협력단 태양광 전지용 나노결정질 구리 인듐 디셀레니드 (cis) 및 잉크-기반 합금 흡수재층
JP2012114250A (ja) * 2010-11-25 2012-06-14 Kyocera Corp 光電変換装置の製造方法
EP2647595A2 (en) * 2012-04-03 2013-10-09 Neo Solar Power Corp. Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same
JP5860765B2 (ja) * 2012-05-30 2016-02-16 富士フイルム株式会社 光電変換素子および光電変換素子の製造方法
US8728855B2 (en) * 2012-09-28 2014-05-20 First Solar, Inc. Method of processing a semiconductor assembly
TWI449193B (zh) * 2012-12-21 2014-08-11 財團法人工業技術研究院 太陽電池吸收層之製備方法及其熱處理設備
US9196767B2 (en) 2013-07-18 2015-11-24 Nanoco Technologies Ltd. Preparation of copper selenide nanoparticles
JP6276401B2 (ja) * 2013-08-01 2018-02-07 エルジー・ケム・リミテッド 太陽電池の光吸収層製造用金属カルコゲナイドナノ粒子及びその製造方法
KR101619933B1 (ko) * 2013-08-01 2016-05-11 주식회사 엘지화학 태양전지 광흡수층 제조용 3층 코어-쉘 나노 입자 및 이의 제조 방법
KR101689471B1 (ko) * 2015-06-15 2016-12-26 한양대학교 산학협력단 금속 칼코겐 화합물 박막 및 그 제조 방법
CN110546106B (zh) * 2017-02-16 2024-02-27 维克森林大学 复合纳米颗粒组合物及集合

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01160060A (ja) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd ２セレン化インジウム銅の製造方法
JP3064701B2 (ja) * 1992-10-30 2000-07-12 松下電器産業株式会社 カルコパイライト型化合物薄膜の製造方法
JP3249408B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
WO2001037324A1 (en) * 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
US7842882B2 (en) * 2004-03-01 2010-11-30 Basol Bulent M Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth
JP3897622B2 (ja) * 2002-03-18 2007-03-28 松下電器産業株式会社 化合物半導体薄膜の製造方法

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