JP2009528681A5 - - Google Patents

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JP2009528681A5
JP2009528681A5 JP2008556571A JP2008556571A JP2009528681A5 JP 2009528681 A5 JP2009528681 A5 JP 2009528681A5 JP 2008556571 A JP2008556571 A JP 2008556571A JP 2008556571 A JP2008556571 A JP 2008556571A JP 2009528681 A5 JP2009528681 A5 JP 2009528681A5
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Japan
Prior art keywords
particles
group
intermetallic
chalcogenide
phase
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JP2008556571A
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JP2009528681A (en
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Priority claimed from US11/361,433 external-priority patent/US7700464B2/en
Priority claimed from US11/361,515 external-priority patent/US20070163640A1/en
Priority claimed from US11/361,464 external-priority patent/US20070169810A1/en
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/361,523 external-priority patent/US20070169811A1/en
Priority claimed from US11/361,103 external-priority patent/US20070169809A1/en
Priority claimed from US11/361,498 external-priority patent/US20070163639A1/en
Priority claimed from US11/395,668 external-priority patent/US8309163B2/en
Priority claimed from US11/394,849 external-priority patent/US20070163641A1/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Application filed filed Critical
Priority claimed from PCT/US2007/062764 external-priority patent/WO2007101136A2/en
Publication of JP2009528681A publication Critical patent/JP2009528681A/en
Publication of JP2009528681A5 publication Critical patent/JP2009528681A5/ja
Pending legal-status Critical Current

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Claims (16)

ＩＢ族元素カルコゲニドおよび／またはＩＩＩＡ族元素カルコゲニド粒子を含む前駆体物質を形成する工程と、Forming a precursor material comprising group IB element chalcogenide and / or group IIIA element chalcogenide particles;
前記前駆体物質の前駆体層を基板表面上に形成する工程と、Forming a precursor layer of the precursor material on a substrate surface;
前記前駆体物質の粒子を実質的に無酸素のカルコゲン雰囲気下にて、前記カルコゲニド粒子が反応して前記カルコゲニド粒子からカルコゲンを放出するに十分な加工温度まで加熱し、前記カルコゲンが液体状態をとりフラックスとして挙動して、元素の混合を増大させて、所望の化学量論比ＩＢ−ＩＩＩＡ族元素カルコゲニド薄膜を形成する工程とを備え、The precursor material particles are heated in a substantially oxygen-free chalcogen atmosphere to a processing temperature sufficient for the chalcogenide particles to react and release the chalcogen from the chalcogenide particles, and the chalcogen is in a liquid state. Forming a desired stoichiometric ratio IB-IIIA group chalcogenide thin film, behaving as a flux and increasing the mixing of the elements,
前記前駆体物質中の少なくとも一組の前記粒子が少なくとも一つのＩＢ−ＩＩＩＡ族元素の金属間合金相を含む金属間粒子であることを含む方法。A method comprising: at least one set of said particles in said precursor material being intermetallic particles comprising at least one intermetallic alloy phase of a group IB-IIIA element. 金属間粒子中のＩＢ族元素が前記全粒子中のＩＢ族元素の５０モル％未満である請求項１に記載の方法。The method according to claim 1, wherein the group IB element in the intermetallic particles is less than 50 mol% of the group IB element in the whole particles. 前記金属間物質がＣｕThe intermetallic substance is Cu １1 ＩｎIn ２2 を含む請求項１に記載の方法。The method of claim 1 comprising: 前記金属間物質がδ相のＣｕThe intermetallic substance is Cu of δ phase １1 ＩｎIn ２2 とＣｕAnd Cu １６16 ＩｎIn ９9 で定義される相の中間の組成を有する請求項１に記載の方法。The process of claim 1 having an intermediate composition of phases defined by 前記金属間物質がＣｕThe intermetallic substance is Cu １1 ＧａGa ２2 を含む請求項１に記載の方法。The method of claim 1 comprising: 前記金属間物質中間固溶体のＣｕCu of the intermetallic substance intermediate solid solution １1 ＧａGa ２2 を含む請求項１に記載の方法。The method of claim 1 comprising: 前記金属間が、γBetween the metals is γ １1 相（約３１．８〜約３９．８重量％Ｇａ）の組成のＣｕ−Ｇａを含む請求項１に記載の方法。The method of claim 1, comprising Cu—Ga in a composition of phase (about 31.8 to about 39.8 wt% Ga). 前記金属間がγΓ between the metals ２2 相（約３６．０〜約３９．９重量％Ｇａ）の組成のＣｕ−Ｇａを含む請求項１に記載の方法。The method of claim 1 comprising Cu-Ga in a composition of phase (about 36.0 to about 39.9 wt% Ga). 前記金属間がγΓ between the metals ３3 相（約３９．７〜約−４４．９重量％Ｇａ）の組成のＣｕ−Ｇａを含む請求項１に記載の方法。The method of claim 1 comprising Cu-Ga having a composition of phase (about 39.7 to about -44.9 wt% Ga). 前記金属間がθ相（約６６．７〜約６８．７重量％Ｇａ）の組成のＣｕ−Ｇａを含む請求項１に記載の方法。The method according to claim 1, wherein the intermetallic material includes Cu—Ga having a composition of θ phase (about 66.7 to about 68.7 wt% Ga). 前記好適な雰囲気が、セレン、硫黄、テルル、ＨThe preferred atmosphere is selenium, sulfur, tellurium, H ２2 、ＣＯ、Ｈ, CO, H ２2 Ｓｅ、ＨSe, H ２2 Ｓ、Ａｒ、およびＮS, Ar, and N ２2 からなるグループの内の少なくとも一つの元素または化合At least one element or compound of the group consisting of
物、または前記の組合せまたは混合物を含む請求項１に記載の方法。Or a combination or mixture of said substances. 複数のクラスの前記粒子がアルミニウム（Ａｌ）、硫黄（Ｓ）、ナトリウム（Ｎａ）、カリウム（Ｋ）、またはリチウム（Ｌｉ）からなるグループから選ばれる複数の無機物質によりドープされる請求項１に記載の方法。The plurality of classes of particles are doped with a plurality of inorganic substances selected from the group consisting of aluminum (Al), sulfur (S), sodium (Na), potassium (K), or lithium (Li). The method described. 前記生成するＩＢ−ＩＩＩＡ族元素カルコゲニド薄膜中で、ＩＢ族元素に対するＩＩＩＡ族元素のモル数の比率が約０．８０より大きく約１．０未満である請求項１に記載の方法。The method of claim 1, wherein in the resulting IB-IIIA element chalcogenide thin film, the ratio of the number of moles of the group IIIA element to the group IB element is greater than about 0.80 and less than about 1.0. 前記粒子が約５．０重量パーセントより多い酸素を含まない請求項１に記載の方法。The method of claim 1, wherein the particles do not contain more than about 5.0 weight percent oxygen. 反応させることが、前記粒子を反応させるために少なくとも部分的に前記粒子を融解させることを含む請求項１に記載の方法。The method of claim 1, wherein reacting comprises at least partially melting the particles to react the particles. 前記前駆体層中のＩＢ族元素カルコゲニドはＣｕThe IB group element chalcogenide in the precursor layer is Cu. ｘx ＳｅSe ｙy を含み、前記前駆体層中のＩＢ族元素カルコゲニドはＣｕIB group element chalcogenide in the precursor layer is Cu ｚz ＳｅSe ｙy （ここでｘ＞ｚ）を含む請求項１に記載の方法。2. The method of claim 1 comprising (where x> z).
JP2008556571A 2006-02-23 2007-02-23 High-throughput semiconductor layer formation using chalcogen and intermetallic materials Pending JP2009528681A (en)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/361,523 US20070169811A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of thermal and chemical gradients
US11/361,103 US20070169809A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides
US11/361,433 US7700464B2 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US11/361,498 US20070163639A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from microflake particles
US11/361,515 US20070163640A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US11/361,464 US20070169810A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor
US39619906A 2006-03-30 2006-03-30
US11/395,668 US8309163B2 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US11/394,849 US20070163641A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
PCT/US2007/062764 WO2007101136A2 (en) 2006-02-23 2007-02-23 High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material

Publications (2)

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JP2009528681A JP2009528681A (en) 2009-08-06
JP2009528681A5 true JP2009528681A5 (en) 2010-04-08

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JP (1) JP2009528681A (en)
WO (1) WO2007101136A2 (en)

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JP5213777B2 (en) * 2009-03-26 2013-06-19 京セラ株式会社 Thin film solar cell manufacturing method
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JP2011138837A (en) * 2009-12-26 2011-07-14 Kyocera Corp Method of manufacturing semiconductor layer, and method of manufacturing photoelectric conversion device
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KR101749137B1 (en) * 2010-06-22 2017-06-21 영남대학교 산학협력단 Nanocrystalline copper indium diselenide (cis) and ink-based alloys absorber layers for solar cells
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US9196767B2 (en) 2013-07-18 2015-11-24 Nanoco Technologies Ltd. Preparation of copper selenide nanoparticles
KR101619933B1 (en) * 2013-08-01 2016-05-11 주식회사 엘지화학 Three-Layer Core-Shell Nano Particle for Manufacturing Light Absorbing Layer of Solar Cell and Manufacturing Method thereof
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KR101689471B1 (en) * 2015-06-15 2016-12-26 한양대학교 산학협력단 Metal chalconide thin films, and method of fabricating the same and its crystallinity improvement process
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