JP2009528682A5 - - Google Patents
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- JP2009528682A5 JP2009528682A5 JP2008556573A JP2008556573A JP2009528682A5 JP 2009528682 A5 JP2009528682 A5 JP 2009528682A5 JP 2008556573 A JP2008556573 A JP 2008556573A JP 2008556573 A JP2008556573 A JP 2008556573A JP 2009528682 A5 JP2009528682 A5 JP 2009528682A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- phase
- particles
- nanoflakes
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 19
- 239000011734 sodium Substances 0.000 claims 16
- 229910052708 sodium Inorganic materials 0.000 claims 14
- 239000000203 mixture Substances 0.000 claims 10
- 239000002245 particle Substances 0.000 claims 9
- 229910052733 gallium Inorganic materials 0.000 claims 8
- 239000002060 nanoflake Substances 0.000 claims 7
- 239000006104 solid solution Substances 0.000 claims 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 4
- 229910052717 sulfur Inorganic materials 0.000 claims 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 3
- 239000011593 sulfur Substances 0.000 claims 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 239000002077 nanosphere Substances 0.000 claims 2
- 239000002243 precursor Substances 0.000 claims 2
- 229910052711 selenium Inorganic materials 0.000 claims 2
- 239000011669 selenium Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 229910052714 tellurium Inorganic materials 0.000 claims 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- 229910014103 Na-S Inorganic materials 0.000 claims 1
- 229910014147 Na—S Inorganic materials 0.000 claims 1
- 229910014589 Na—Se Inorganic materials 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- 229910000905 alloy phase Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000000839 emulsion Substances 0.000 claims 1
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- 239000001995 intermetallic alloy Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 claims 1
- 150000003346 selenoethers Chemical class 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/361,497 US20070163638A1 (en) | 2004-02-19 | 2006-02-23 | Photovoltaic devices printed from nanostructured particles |
| US11/361,103 US20070169809A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides |
| US11/361,521 US20070163383A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of nanostructured semiconductor precursor layer |
| US11/361,515 US20070163640A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides |
| US11/361,433 US7700464B2 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of semiconductor precursor layer from nanoflake particles |
| US11/361,522 US20070166453A1 (en) | 2004-02-19 | 2006-02-23 | High-throughput printing of chalcogen layer |
| US11/395,438 US20070163643A1 (en) | 2004-02-19 | 2006-03-30 | High-throughput printing of chalcogen layer and the use of an inter-metallic material |
| US11/394,849 US20070163641A1 (en) | 2004-02-19 | 2006-03-30 | High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles |
| US11/395,668 US8309163B2 (en) | 2004-02-19 | 2006-03-30 | High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material |
| PCT/US2007/062766 WO2007101138A2 (en) | 2006-02-23 | 2007-02-23 | High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012220990A Division JP2013033987A (ja) | 2006-02-23 | 2012-10-03 | 金属間ナノフレーク粒子による高処理能力の半導体前駆体層印刷 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009528682A JP2009528682A (ja) | 2009-08-06 |
| JP2009528682A5 true JP2009528682A5 (enExample) | 2010-04-15 |
Family
ID=38459767
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008556573A Pending JP2009528682A (ja) | 2006-02-23 | 2007-02-23 | 金属間ナノフレーク粒子による高処理能力の半導体前駆体層印刷 |
| JP2012220990A Pending JP2013033987A (ja) | 2006-02-23 | 2012-10-03 | 金属間ナノフレーク粒子による高処理能力の半導体前駆体層印刷 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012220990A Pending JP2013033987A (ja) | 2006-02-23 | 2012-10-03 | 金属間ナノフレーク粒子による高処理能力の半導体前駆体層印刷 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1997150A2 (enExample) |
| JP (2) | JP2009528682A (enExample) |
| CN (2) | CN101443919B (enExample) |
| WO (1) | WO2007101138A2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8354294B2 (en) * | 2006-01-24 | 2013-01-15 | De Rochemont L Pierre | Liquid chemical deposition apparatus and process and products therefrom |
| WO2010062708A2 (en) * | 2008-10-30 | 2010-06-03 | Hak Fei Poon | Hybrid transparent conductive electrodes |
| JP5137794B2 (ja) * | 2008-11-26 | 2013-02-06 | 京セラ株式会社 | 薄膜太陽電池の製法 |
| JP5383162B2 (ja) * | 2008-11-26 | 2014-01-08 | 京セラ株式会社 | 薄膜太陽電池の製法 |
| JP2010129648A (ja) * | 2008-11-26 | 2010-06-10 | Kyocera Corp | 薄膜太陽電池の製法 |
| JP5317648B2 (ja) * | 2008-11-26 | 2013-10-16 | 京セラ株式会社 | 薄膜太陽電池の製法 |
| CN102361830A (zh) * | 2009-01-21 | 2012-02-22 | 珀杜研究基金会 | 含CuInS2纳米颗粒的前体层的硒化 |
| JP2010225985A (ja) * | 2009-03-25 | 2010-10-07 | Fujifilm Corp | 光電変換半導体層とその製造方法、光電変換素子、及び太陽電池 |
| SG178229A1 (en) * | 2009-08-04 | 2012-03-29 | Precursor Energetics Inc | Methods for photovoltaic absorbers with controlled stoichiometry |
| KR101610382B1 (ko) * | 2009-10-30 | 2016-04-08 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
| FR2964044B1 (fr) * | 2010-08-26 | 2012-09-14 | Commissariat Energie Atomique | Emulsion de metal liquide |
| US8883550B2 (en) * | 2010-09-15 | 2014-11-11 | Precursor Energetics, Inc. | Deposition processes for photovoltaic devices |
| TWI538235B (zh) * | 2011-04-19 | 2016-06-11 | 弗里松股份有限公司 | 薄膜光伏打裝置及製造方法 |
| EP2876668B1 (en) | 2012-07-20 | 2023-11-15 | Asahi Kasei Kabushiki Kaisha | Semiconductor film and semiconductor element |
| KR101723062B1 (ko) * | 2014-11-18 | 2017-04-04 | 주식회사 엘지화학 | 태양전지 광흡수층 제조용 금속 칼코게나이드 나노 입자 및 이의 제조방법 |
| CN109830549B (zh) * | 2018-12-13 | 2021-01-05 | 广东工业大学 | 一种硫化铟/石墨烯复合薄膜及其制备方法和应用 |
| CN113324970B (zh) * | 2021-04-25 | 2023-04-21 | 中国科学技术大学 | 一种结构可调的高热点三维网筛纳米拉曼基底及其制备、应用 |
| CN117866484B (zh) * | 2024-03-12 | 2024-06-04 | 成都先进金属材料产业技术研究院股份有限公司 | 一种液态金属油墨及其制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0743686A3 (en) * | 1995-05-15 | 1998-12-02 | Matsushita Electric Industrial Co., Ltd | Precursor for semiconductor thin films and method for producing semiconductor thin films |
| US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
| JP2001044464A (ja) * | 1999-07-28 | 2001-02-16 | Asahi Chem Ind Co Ltd | Ｉｂ―ＩＩＩｂ―ＶＩｂ２族化合物半導体層の形成方法、薄膜太陽電池の製造方法 |
| JP4341124B2 (ja) * | 1999-11-25 | 2009-10-07 | ソニー株式会社 | 半導体装置の製造方法 |
| US7091136B2 (en) * | 2001-04-16 | 2006-08-15 | Basol Bulent M | Method of forming semiconductor compound film for fabrication of electronic device and film produced by same |
| US20030041893A1 (en) * | 2001-08-31 | 2003-03-06 | Matsushita Electric Industrial Co. Ltd. | Solar cell, method for manufacturing the same, and apparatus for manufacturing the same |
| JP2004087535A (ja) * | 2002-08-22 | 2004-03-18 | Sony Corp | 結晶質半導体材料の製造方法および半導体装置の製造方法 |
| CN100411195C (zh) * | 2003-04-11 | 2008-08-13 | 索尼株式会社 | 光电转换器件的制作方法 |
| CN1295765C (zh) * | 2004-03-04 | 2007-01-17 | 上海交通大学 | 光伏半导体薄膜渡液及光伏半导体薄膜的制备方法 |
-
2007
- 2007-02-23 JP JP2008556573A patent/JP2009528682A/ja active Pending
- 2007-02-23 EP EP07757448A patent/EP1997150A2/en not_active Withdrawn
- 2007-02-23 CN CN200780014617.7A patent/CN101443919B/zh not_active Expired - Fee Related
- 2007-02-23 CN CN201410025475.6A patent/CN103824896A/zh active Pending
- 2007-02-23 WO PCT/US2007/062766 patent/WO2007101138A2/en not_active Ceased
-
2012
- 2012-10-03 JP JP2012220990A patent/JP2013033987A/ja active Pending
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