JP2009528682A - 金属間ナノフレーク粒子による高処理能力の半導体前駆体層印刷 - Google Patents

金属間ナノフレーク粒子による高処理能力の半導体前駆体層印刷 Download PDF

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Publication number
JP2009528682A
JP2009528682A JP2008556573A JP2008556573A JP2009528682A JP 2009528682 A JP2009528682 A JP 2009528682A JP 2008556573 A JP2008556573 A JP 2008556573A JP 2008556573 A JP2008556573 A JP 2008556573A JP 2009528682 A JP2009528682 A JP 2009528682A
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Prior art keywords
nanoflakes
particles
group
layer
intermetallic
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Pending
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JP2008556573A
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Japanese (ja)
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JP2009528682A5 (enExample
Inventor
デューレン、イェルーン カー．イェー． ファン
アール． レイドルム、クレイグ
アール． ロビンソン、マシュー
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Van Duren Jeroen KJ
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Van Duren Jeroen KJ
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Priority claimed from US11/361,521 external-priority patent/US20070163383A1/en
Priority claimed from US11/361,433 external-priority patent/US7700464B2/en
Priority claimed from US11/361,497 external-priority patent/US20070163638A1/en
Priority claimed from US11/361,103 external-priority patent/US20070169809A1/en
Priority claimed from US11/361,515 external-priority patent/US20070163640A1/en
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/395,668 external-priority patent/US8309163B2/en
Priority claimed from US11/394,849 external-priority patent/US20070163641A1/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Application filed by Van Duren Jeroen KJ filed Critical Van Duren Jeroen KJ
Publication of JP2009528682A publication Critical patent/JP2009528682A/ja
Publication of JP2009528682A5 publication Critical patent/JP2009528682A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1241—Metallic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
    • C23C18/127—Preformed particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/134—Irradiation with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
JP2008556573A 2006-02-23 2007-02-23 金属間ナノフレーク粒子による高処理能力の半導体前駆体層印刷 Pending JP2009528682A (ja)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US11/361,433 US7700464B2 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US11/361,497 US20070163638A1 (en) 2004-02-19 2006-02-23 Photovoltaic devices printed from nanostructured particles
US11/361,103 US20070169809A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides
US11/361,521 US20070163383A1 (en) 2004-02-19 2006-02-23 High-throughput printing of nanostructured semiconductor precursor layer
US11/361,515 US20070163640A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/395,668 US8309163B2 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US11/394,849 US20070163641A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
PCT/US2007/062766 WO2007101138A2 (en) 2006-02-23 2007-02-23 High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles

Related Child Applications (1)

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JP2012220990A Division JP2013033987A (ja) 2006-02-23 2012-10-03 金属間ナノフレーク粒子による高処理能力の半導体前駆体層印刷

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JP2009528682A true JP2009528682A (ja) 2009-08-06
JP2009528682A5 JP2009528682A5 (enExample) 2010-04-15

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JP2008556573A Pending JP2009528682A (ja) 2006-02-23 2007-02-23 金属間ナノフレーク粒子による高処理能力の半導体前駆体層印刷
JP2012220990A Pending JP2013033987A (ja) 2006-02-23 2012-10-03 金属間ナノフレーク粒子による高処理能力の半導体前駆体層印刷

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Country Status (4)

Country Link
EP (1) EP1997150A2 (enExample)
JP (2) JP2009528682A (enExample)
CN (2) CN103824896A (enExample)
WO (1) WO2007101138A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013501381A (ja) * 2009-08-04 2013-01-10 プリカーサー エナジェティクス， インコーポレイテッド 制御された化学量論を有する光起電性アブソーバーのための方法
JP2013538893A (ja) * 2010-08-26 2013-10-17 コミサリア ア レネルジィ アトミーク エ オ ゼネ ルジイ アルテアナティーフ 液体金属エマルジョン
KR101610382B1 (ko) * 2009-10-30 2016-04-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354294B2 (en) * 2006-01-24 2013-01-15 De Rochemont L Pierre Liquid chemical deposition apparatus and process and products therefrom
WO2010062708A2 (en) * 2008-10-30 2010-06-03 Hak Fei Poon Hybrid transparent conductive electrodes
JP5137794B2 (ja) * 2008-11-26 2013-02-06 京セラ株式会社 薄膜太陽電池の製法
JP5383162B2 (ja) * 2008-11-26 2014-01-08 京セラ株式会社 薄膜太陽電池の製法
JP5317648B2 (ja) * 2008-11-26 2013-10-16 京セラ株式会社 薄膜太陽電池の製法
JP2010129648A (ja) * 2008-11-26 2010-06-10 Kyocera Corp 薄膜太陽電池の製法
WO2010085553A1 (en) * 2009-01-21 2010-07-29 Purdue Research Foundation Selenization of precursor layer containing culns2 nanoparticles
JP2010225985A (ja) * 2009-03-25 2010-10-07 Fujifilm Corp 光電変換半導体層とその製造方法、光電変換素子、及び太陽電池
TW201230379A (en) * 2010-09-15 2012-07-16 Precursor Energetics Inc Deposition processes and devices for photovoltaics
TWI538235B (zh) * 2011-04-19 2016-06-11 弗里松股份有限公司 薄膜光伏打裝置及製造方法
EP3001439B1 (en) 2012-07-20 2021-11-03 Asahi Kasei Kabushiki Kaisha Semiconductor film and application liquid for its fabrication
KR101723062B1 (ko) * 2014-11-18 2017-04-04 주식회사 엘지화학 태양전지 광흡수층 제조용 금속 칼코게나이드 나노 입자 및 이의 제조방법
CN109830549B (zh) * 2018-12-13 2021-01-05 广东工业大学 一种硫化铟/石墨烯复合薄膜及其制备方法和应用
CN113324970B (zh) * 2021-04-25 2023-04-21 中国科学技术大学 一种结构可调的高热点三维网筛纳米拉曼基底及其制备、应用
CN117866484B (zh) * 2024-03-12 2024-06-04 成都先进金属材料产业技术研究院股份有限公司 一种液态金属油墨及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040219730A1 (en) * 2001-04-16 2004-11-04 Basol Bulent M. Method of forming semiconductor compound film for fabrication of electronic device and film produced by same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0743686A3 (en) * 1995-05-15 1998-12-02 Matsushita Electric Industrial Co., Ltd Precursor for semiconductor thin films and method for producing semiconductor thin films
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
JP2001044464A (ja) * 1999-07-28 2001-02-16 Asahi Chem Ind Co Ltd Ｉｂ―ＩＩＩｂ―ＶＩｂ２族化合物半導体層の形成方法、薄膜太陽電池の製造方法
JP4341124B2 (ja) * 1999-11-25 2009-10-07 ソニー株式会社 半導体装置の製造方法
US20030041893A1 (en) * 2001-08-31 2003-03-06 Matsushita Electric Industrial Co. Ltd. Solar cell, method for manufacturing the same, and apparatus for manufacturing the same
JP2004087535A (ja) * 2002-08-22 2004-03-18 Sony Corp 結晶質半導体材料の製造方法および半導体装置の製造方法
US20050016578A1 (en) * 2003-04-11 2005-01-27 Sony Corporation Photoelectric conversion device fabrication method, photoelectric conversion device, electronic apparatus manufacturing method, electronic apparatus, metal film formation method and layer structure, and semiconductor fine particle layer and layer structure
CN1295765C (zh) * 2004-03-04 2007-01-17 上海交通大学 光伏半导体薄膜渡液及光伏半导体薄膜的制备方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040219730A1 (en) * 2001-04-16 2004-11-04 Basol Bulent M. Method of forming semiconductor compound film for fabrication of electronic device and film produced by same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013501381A (ja) * 2009-08-04 2013-01-10 プリカーサー エナジェティクス， インコーポレイテッド 制御された化学量論を有する光起電性アブソーバーのための方法
KR101610382B1 (ko) * 2009-10-30 2016-04-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법
JP2013538893A (ja) * 2010-08-26 2013-10-17 コミサリア ア レネルジィ アトミーク エ オ ゼネ ルジイ アルテアナティーフ 液体金属エマルジョン

Also Published As

Publication number Publication date
JP2013033987A (ja) 2013-02-14
CN103824896A (zh) 2014-05-28
CN101443919A (zh) 2009-05-27
WO2007101138A3 (en) 2008-10-23
CN101443919B (zh) 2014-03-05
WO2007101138A2 (en) 2007-09-07
WO2007101138A9 (en) 2008-12-31
EP1997150A2 (en) 2008-12-03

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