JP5260275B2 - 化合物膜の形成方法 - Google Patents
化合物膜の形成方法 Download PDFInfo
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- JP5260275B2 JP5260275B2 JP2008502044A JP2008502044A JP5260275B2 JP 5260275 B2 JP5260275 B2 JP 5260275B2 JP 2008502044 A JP2008502044 A JP 2008502044A JP 2008502044 A JP2008502044 A JP 2008502044A JP 5260275 B2 JP5260275 B2 JP 5260275B2
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- gallium
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Images
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- C—CHEMISTRY; METALLURGY
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1258—Spray pyrolysis
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
- H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Description
「任意」または「任意で」は、その後に説明されている状況が生じることも、あるいは生じないこともあることを意味しており、したがってその説明には、その状況が生じる場合の例とその状況が生じない場合の例が含まれている。たとえば、デバイスが任意で障壁膜の機能を備えている場合、これは、障壁膜の機能が存在することも、あるいは存在しないこともあることを意味しており、したがってその説明には、デバイスが障壁膜の機能を備えた構造と、障壁膜の機能が存在しない構造の両方が含まれている。
Claims (15)
- グループIBおよびIIIAの少なくとも一方の元素、および任意で少なくとも1つのグループVIAの元素の粒子の分散剤を形成する工程と、
基板の上に層を形成するために、該基板に該分散剤をコーティングする工程と、
膜を形成するために、1つ以上のステップによって該層を反応させる工程と
を含み、
前記分散剤中の前記粒子の少なくとも一部は元素ナノ粒子からなり、
前記粒子の分散剤は液体ガリウムの乳濁液を溶液中に生成することにより形成された複数のガリウムのナノ球体を含有する、化合物膜の形成方法。 - 前記グループIIIAの粒子の少なくとも一部がナノ球体である、請求項1に記載の方法。
- 前記ガリウムが室温未満に急冷され、液体ガリウムの乳濁液から固体のガリウム粒子が形成される、請求項1に記載の方法。
- 前記粒子の直径が500ナノメートル以下である、請求項1に記載の方法。
- 1つまたは複数の等級の前記粒子が、アルミニウム(Al)、硫黄(S)、ナトリウム(Na)、カリウム(K)、リチウム(Li)またはこれらの混合物のグループから選択される1つまたは複数の無機材料でドープされる、請求項1に記載の方法。
- 前記層を適切な雰囲気中で反応させ、組成の範囲が0.01乃至1.0のCu/(In+Ga)および組成の範囲が0.01ないし1.0のGa/(In+Ga)を有する化合物膜を形成する工程を含む、請求項1に記載の方法。
- 前記化合物層を形成するために、前記形成工程、付着工程および反応工程を2回以上繰返す工程を更に含み、少なくとも1回の繰り返しにおいて、前記形成工程が、化合物膜内の前記IB、IIIAまたはVIAの元素の濃度が深さの関数として変化するよう、前記IB、IIIAまたはVIAの元素ナノ粒子の相対濃度を変化させる、請求項1に記載の方法。
- 前記基板が、ガラス、ソーダ石灰ガラス、鋼、ステンレス鋼、アルミニウム、アルミニウム箔、モリブデン、モリブデン箔、チタン、チタン箔、重合体、セラミック、金属プレート、金属化セラミック・プレート、金属化重合体プレート、金属化ガラス・プレートおよびこれらの混合物からなる群より選択される少なくとも1つの材料からなる、請求項1〜7のいずれか1項に記載の方法。
- 前記膜が、前記粒子の前記前躯体層と、前記前躯体層と接触する材料を含有したナトリウムの層とから形成される、請求項1または7に記載の方法。
- 前記粒子が、Cu−Na、In−Na、Ga−Na、Cu−In−Na、Cu−Ga−Na、In−Ga−Na、Na−Se、Cu−Se−Na、In−Se−Na、Ga−Se−Na、Cu−In−Se−Na、Cu−Ga−Se−Na、In−Ga−Se−Na、Cu−In−Ga−Se−Na、Na−S、Cu−S−Na、In−S−Na、Ga−S−Na、Cu−In−S−Na、Cu−Ga−S−Na、In−Ga−S−NaまたはCu−In−Ga−S−Naの材料のうちの少なくとも1つを含有している、請求項1または7に記載の方法。
- 前記膜が、前記粒子の前躯体層と、有機対イオンを含有したナトリウム化合物または無機対イオンを含有したナトリウム化合物を含有したインクとから形成される、請求項1または7に記載の方法。
- 前記膜が、前記粒子の前躯体層および該前躯体層に接触する材料を含有するナトリウムの層と、Cu−Na、In−Na、Ga−Na、Cu−In−Na、Cu−Ga−Na、In−Ga−Na、Na−Se、Cu−Se−Na、In−Se−Na、Ga−Se−Na、Cu−In−Se−Na、Cu−Ga−Se−Na、In−Ga−Se−Na、Cu−In−Ga−Se−Na、Na−S、Cu−S−Na、In−S−Na、Ga−S−Na、Cu−In−S−Na、Cu−Ga−S−Na、In−Ga−S−NaまたはCu−In−Ga−S−Naの材料のうちの少なくとも1つを含有する粒子と、該粒子および有機対イオンを含有するナトリウム化合物または無機対イオンを含有するナトリウム化合物を含んだインクとの少なくともいずれか一つから形成される、請求項1または7に記載の方法。
- 前記反応工程の後に、ナトリウムを含有した材料を前記膜に添加する工程をさらに含む、請求項1〜12のいずれか1項に記載の方法。
- 前記膜が、セレン、硫黄もしくはテルルまたはこれらの組合せあるいはブレンドのうちの少なくとも1つを含有している雰囲気中で反応させることにより形成される、請求項1〜13のいずれか1項に記載の方法。
- 分散剤、界面活性剤、重合体、結合剤、交差結合剤、乳化剤、消泡剤、乾燥剤、溶媒、充填剤、エキステンダ、シックニング剤、膜コンディショナ、酸化防止剤、流動剤、レベリング剤および腐食防止剤からなる群より選択される少なくとも1つの化学添加剤を添加する工程を更に含む、請求項1〜14のいずれか1項に記載の方法。
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US11/081,163 US7604843B1 (en) | 2005-03-16 | 2005-03-16 | Metallic dispersion |
US11/081,163 | 2005-03-16 | ||
US11/243,492 US20060207644A1 (en) | 2005-03-16 | 2005-10-03 | Formation of compound film for photovoltaic device |
US11/243,492 | 2005-10-03 | ||
PCT/US2006/009534 WO2006101986A2 (en) | 2005-03-16 | 2006-03-16 | Mettalic dispersion and formation of compound film for photovoltaic device active layer |
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US7306823B2 (en) | 2004-09-18 | 2007-12-11 | Nanosolar, Inc. | Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells |
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2005
- 2005-03-16 US US11/081,163 patent/US7604843B1/en not_active Expired - Fee Related
- 2005-10-03 US US11/243,492 patent/US20060207644A1/en not_active Abandoned
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- 2006-03-16 JP JP2008502044A patent/JP5260275B2/ja not_active Expired - Fee Related
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US7604843B1 (en) | 2009-10-20 |
US20060207644A1 (en) | 2006-09-21 |
US20100096015A1 (en) | 2010-04-22 |
CN101506990A (zh) | 2009-08-12 |
JP2008537640A (ja) | 2008-09-18 |
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