CN101373795A - 太阳能电池 - Google Patents
太阳能电池 Download PDFInfo
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- CN101373795A CN101373795A CNA2007102014028A CN200710201402A CN101373795A CN 101373795 A CN101373795 A CN 101373795A CN A2007102014028 A CNA2007102014028 A CN A2007102014028A CN 200710201402 A CN200710201402 A CN 200710201402A CN 101373795 A CN101373795 A CN 101373795A
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Abstract
一种太阳能电池，其包括：一背电极层；一P型半导体层；一N型半导体层；一透明导电层，所述背电极层及透明导电层分别与所述P型半导体层及N型半导体层接触，所述透明导电层包括一基质及分散在该基质中的光触媒纳米微粒。所述太阳能电池将光触媒纳米微粒掺杂入透明导电层基质中。光触媒纳米微粒在太阳光的作用下，对粘附于其上的有机物等污染物具有氧化分解作用，因此，该光触媒纳米微粒使透明导电层具有自洁性，从而透明导电层可以保持较好的透光性能，整个太阳能电池可以被保护得较好。
Description
技术领域
本发明涉及太阳能电池技术领域，尤其涉及一种具有自洁性透光层的太阳能电池。
背景技术
太阳能电池成为能源领域的研究热点，其可被安装于房屋等建筑构件上、汽车等行动装置上、室内、甚至各种便携式电子装置上，用于将太阳光能转化为电能。
太阳能电池是利用半导体材料将太阳的辐射能光子转变为电能(请参见“Grownjunction GaAs solar cell”，Shen，C.C.；Pearson，G.L.；Proceedings of the IEEE，Volume 64，Issue 3，March 1976 Page(s)：384385)。太阳能电池的结构主要包括P型半导体材料层和N型半导体材料层。太阳能电池板的光电转换过程是指当太阳光照射到半导体材料层上时，其中一部分被表面反射掉，其余部分被半导体材料层吸收或透过。被吸收的光，当然有一些变成热能，另一些光子则同组成半导体的原子及价电子碰撞，于是产生电子空穴对。这样，光能就以产生电子空穴对的形式转变为电能，并在P型半导体材料层和N型半导体材料层交界面两边形成势垒电场，使电子驱向N区，空穴驱向P区，从而N区有过剩的电子，P区有过剩的空穴，在P-N结附近形成与势垒电场方向相反的光生电场。光生电场的一部分除抵销势垒电场外，还使P型半体材料层带正电，N型半导体材料层带负电，在N区与P区之间的薄层产生所谓光生伏打电动势。若分别在P型半体材料层和N型半导体材料层接上电极引线，接通负载，则外电路便有电流通过。如此形成的一个个电池元件，把它们串联、并联起来，就能产生一定的电压和电流，输出功率。
而由于P、N半导体材料表面较光亮，容易反射掉太阳光，因而，P或N半导体材料层外往往会增设一些利于透光的膜层。这些透光膜层作为P或N半导体材料的外层，而太阳能电池又被安装于一些污染性无机物或有机物等较多地方时，即使有防护罩的遮挡，这些透光膜层也难免受到污染，从而有损其透光性能，进而影响P、N半导体材料的光电转换性能。
发明内容
有鉴于此，提供一种含有自洁性透光层的太阳能电池实为必要。
一种太阳能电池，其包括：一背电极层；一P型半导体层；一N型半导体层；一透明导电层，所述背电极层及透明导电层分别与所述P型半导体层及N型半导体层接触，所述透明导电层包括一基质及分散在该基质中的光触媒纳米微粒。
所述太阳能电池将光触媒纳米微粒掺杂入透明导电层基质中。光触媒纳米微粒在太阳光的作用下，对粘附于其上的有机物等污染物具有氧化分解作用，因此，该光触媒纳米微粒使透明导电层具有自洁性，从而透明导电层可以保持较好的透光性能，整个太阳能电池可以被保护得较好。
附图说明
图1是本发明的实施例提供的太阳能电池示意图。
具体实施方式
下面结合附图对本发明提供的太阳能电池作进一步详细说明。
请参阅图1，为本发明的实施例提供的太阳能电池100，其包括依序叠置的一基板10、一背电极层20、一P型半导体层30、一P-N过渡层40、一N型半导体层50以及一透明导电层60。
依铺设的需要，所述基板10的材质可以选用刚性的材料，例如玻璃、石墨、陶瓷等，也可以选用柔性的材料，例如高分子塑料、不锈钢等。所述基板10的厚度可以在10微米~100微米之间。
所述背电极层20的材质可以选自铝(Al)、银(Ag)、铜(Cu)、钼(Mo)等金属单质或铝铜(Al-Cu)、银铜(Ag-Cu)、铜钼(Cu-Mo)等合金。所述背电极层20以层面的方式溅射在所述基板10上。
所述P型半导体层30的材质可以是P型氢化非晶硅(P-a-Si:H)，或是P型多元化合物半导体，例如铝镓氮(AlGaN)、铝镓砷(AlGaAs)等。
所述P-N过渡层40的材质可以为掺杂镓(Ga)的硒化铜铟(通式记为CuIn1-xGaxSe2)。所述P-N过渡层40有助于整个太阳能电池100的稳定性以及光电转换效率。
所述N型半导体层50的材质可以是N型氢化非晶硅(N-a-Si:H)，或是N型多元化合物半导体，例如氮化镓(GaN)、磷化铟镓(InGaP)等。
所述P型半导体层30以及N型半导体层50可以采用化学气相沉积法形成。所述P-N过渡层40可以采用溅射法形成。
所述透明导电层60包括透明导电氧化物基质62以及分散在该透明导电氧化物基质62中的二氧化钛纳米微粒64。所述透明导电氧化物基质62成分可以为铟锡氧化物(Indium TinOxide，ITO)、氧化锌(ZnO)或掺杂氧化铝的氧化锌(ZnO-Al2O3)。所述二氧化钛纳米微粒64粒径可以在10纳米至200纳米之间，优选地，在20纳米至100纳米之间。所述二氧化钛纳米微粒64占整个透明导电层60质量的0.2％至10％之间，优选地，在1％~5％之间。所述透明导电层60厚度优选在300纳米~900纳米之间，从而具有较好的透光性，减少光反射。所述透明导电层60可以采用溅射法形成在所述N型半导体层50上。
所述透明导电层60采用的透明导电氧化物基质62可透光，而且电阻较低，因而，该透明导电层60可以直接作为前电极层。而由于该透明导电层60的覆盖，所述N型半导体层50上无需另外再增设减反射层。
在太阳光的照射下，二氧化钛纳米微粒64首先会结合空气中的氧分子和水分子形成强氧化性的氢氧自由基和超氧阴离子自由基。该强氧化性的自由基可以将有机物等污染物氧化分解成水和二氧化碳。上述透明导电氧化物基质62对二氧化钛纳米微粒64具有一修饰作用，可以增加二氧化钛纳米微粒64对光的敏感度。而由于透明导电氧化物基质62与二氧化钛纳米微粒64之间本身便形成一导电通路，上述分解生成的水在这个导电通路及太阳光作用下，会被进一步氧化分解生成氢气和氧气，进而挥发。透明导电层60从而具有自洁作用，保持较好的透光性能，整个太阳能电池100可以被保护得较好。
整个太阳能电池100可以被安装在房屋等建筑构件上、汽车等行动装置上、室内、甚至各种便携式电子装置上。在必要的情况下，太阳能电池100上可以设置一透光防雨框架。
可以理解的是，上述的二氧化钛纳米微粒也可以被其它的光触媒纳米微粒，例如二氧化锡(SnO2)，硫化镉(CdS)等所取代。
对在本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思做出其它各种相应的改变和变形，而所有这些改变和变形都应属在本发明权利要求的保护范围。
Claims (11)
- 【权利要求1】一种太阳能电池，其包括：一背电极层；一P型半导体层；一N型半导体层；一透明导电层，所述背电极层及透明导电层分别与所述P型半导体层及N型半导体层接触，其特征在于，该透明导电层包括一基质及分散在该基质中的光触媒纳米微粒。
- 【权利要求2】如权利要求1所述的太阳能电池，其特征在于，所述背电极层材质选自铝、银、铜、钼等金属单质或其合金。
- 【权利要求3】如权利要求1所述的太阳能电池，其特征在于，所述P型半导体层材质为P型氢化非晶硅或P型化合物半导体。
- 【权利要求4】如权利要求1所述的太阳能电池，其特征在于，所述N型半导体层材质为N型氢化非晶硅或N型化合物半导体。
- 【权利要求5】如权利要求1所述的太阳能电池，其特征在于，进一步包括一P-N过渡层，该P-N过渡层介于P型半导体层与N型半导体层之间，该P-N过渡层材质为掺杂镓的硒化铜铟。
- 【权利要求6】如权利要求1所述的太阳能电池，其特征在于，所述透明导电层厚度在300纳米~900纳米之间。
- 【权利要求7】如权利要求1所述的太阳能电池，其特征在于，所述透明导电层的基质为透明导电氧化物。
- 【权利要求8】如权利要求7所述的太阳能电池，其特征在于，所述透明导电氧化物为铟锡氧化物、氧化锌或掺杂氧化铝的氧化锌。
- 【权利要求9】如权利要求1所述的太阳能电池，其特征在于，所述光触媒纳米微粒为二氧化钛。
- 【权利要求10】如权利要求1所述的太阳能电池，其特征在于，所述光触媒纳米微粒粒径在20纳米至100纳米之间。
- 【权利要求11】如权利要求1所述的太阳能电池，其特征在于，所述光触媒纳米微粒占所述透明导电层质量的1％~5％。
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101930912A (zh) * | 2010-07-20 | 2010-12-29 | 晶澳太阳能有限公司 | 一种利用掩模在硅片两面实现p+和n+扩散的工艺 |
| CN102383111A (zh) * | 2011-09-28 | 2012-03-21 | 深圳市创益科技发展有限公司 | 减少绕射的太阳能电池沉积夹具 |
| RU2728247C1 (ru) * | 2019-12-27 | 2020-07-28 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет ИТМО" (Университет ИТМО) | Устройство фотовольтаики |
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|---|---|---|---|---|
| US20120042952A1 (en) | 2009-04-30 | 2012-02-23 | Industry-University Cooperation Foundation Hanyang University | Silicon solar cell comprising a carbon nanotube layer |
| EP2278624A1 (en) * | 2009-07-24 | 2011-01-26 | University College Cork-National University of Ireland, Cork | Conducting self-cleaning materials and process for producing same |
| TWI387117B (zh) * | 2010-05-04 | 2013-02-21 | Univ Nat Taiwan | 太陽能電池裝置及其製造方法 |
| WO2012057604A1 (en) * | 2010-10-29 | 2012-05-03 | Mimos Berhad | Nanostructure-based photovoltaic cell |
| CN102479847A (zh) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | 内板设有光触媒层的太阳能电池结构及其制造方法 |
| CN102479874A (zh) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | 具有光触媒层的太阳能电池结构的制造方法 |
| CN102479846A (zh) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | 涂布式太阳能电池及其制造方法 |
| CN102479845A (zh) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | 可自动清理杂质的太阳能电池结构及其制造方法 |
| US20140251420A1 (en) * | 2013-03-11 | 2014-09-11 | Tsmc Solar Ltd. | Transparent conductive oxide layer with localized electric field distribution and photovoltaic device thereof |
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Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4816082A (en) * | 1987-08-19 | 1989-03-28 | Energy Conversion Devices, Inc. | Thin film solar cell including a spatially modulated intrinsic layer |
| JP3249407B2 (ja) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池 |
| US6974976B2 (en) * | 2002-09-30 | 2005-12-13 | Miasole | Thin-film solar cells |
| KR101001547B1 (ko) * | 2004-01-28 | 2010-12-17 | 삼성에스디아이 주식회사 | 섬유상 태양 전지 및 이의 제조 방법 |
| US7604843B1 (en) * | 2005-03-16 | 2009-10-20 | Nanosolar, Inc. | Metallic dispersion |
| US20070017566A1 (en) * | 2005-06-13 | 2007-01-25 | Russell Gaudiana | Flexible photovoltaic modules |
| KR101181820B1 (ko) * | 2005-12-29 | 2012-09-11 | 삼성에스디아이 주식회사 | 태양 전지의 제조 방법 |
| US20080053519A1 (en) * | 2006-08-30 | 2008-03-06 | Miasole | Laminated photovoltaic cell |
-
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2008
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101930912A (zh) * | 2010-07-20 | 2010-12-29 | 晶澳太阳能有限公司 | 一种利用掩模在硅片两面实现p+和n+扩散的工艺 |
| CN102383111A (zh) * | 2011-09-28 | 2012-03-21 | 深圳市创益科技发展有限公司 | 减少绕射的太阳能电池沉积夹具 |
| CN102383111B (zh) * | 2011-09-28 | 2013-07-31 | 深圳市创益科技发展有限公司 | 减少绕射的太阳能电池沉积夹具 |
| RU2728247C1 (ru) * | 2019-12-27 | 2020-07-28 | федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет ИТМО" (Университет ИТМО) | Устройство фотовольтаики |
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