JP2009528680A5 - - Google Patents

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Publication number
JP2009528680A5
JP2009528680A5 JP2008556559A JP2008556559A JP2009528680A5 JP 2009528680 A5 JP2009528680 A5 JP 2009528680A5 JP 2008556559 A JP2008556559 A JP 2008556559A JP 2008556559 A JP2008556559 A JP 2008556559A JP 2009528680 A5 JP2009528680 A5 JP 2009528680A5
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JP
Japan
Prior art keywords
particles
group
precursor layer
layer
sodium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008556559A
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English (en)
Japanese (ja)
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JP2009528680A (ja
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Publication date
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Application filed filed Critical
Priority claimed from PCT/US2007/062694 external-priority patent/WO2007101099A2/en
Publication of JP2009528680A publication Critical patent/JP2009528680A/ja
Publication of JP2009528680A5 publication Critical patent/JP2009528680A5/ja
Pending legal-status Critical Current

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JP2008556559A 2006-02-23 2007-02-23 カルコゲン層の高スループット印刷および金属間化合物材料の使用 Pending JP2009528680A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
PCT/US2007/062694 WO2007101099A2 (en) 2006-02-23 2007-02-23 High-throughput printing of chalcogen layer and the use of an inter-metallic material

Publications (2)

Publication Number Publication Date
JP2009528680A JP2009528680A (ja) 2009-08-06
JP2009528680A5 true JP2009528680A5 (enExample) 2010-04-08

Family

ID=38459748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008556559A Pending JP2009528680A (ja) 2006-02-23 2007-02-23 カルコゲン層の高スループット印刷および金属間化合物材料の使用

Country Status (4)

Country Link
EP (1) EP1992010A2 (enExample)
JP (1) JP2009528680A (enExample)
CN (1) CN101443892B (enExample)
WO (1) WO2007101099A2 (enExample)

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WO2009111052A1 (en) * 2008-03-05 2009-09-11 Global Solar Energy, Inc. Heating for buffer layer deposition
JP5738601B2 (ja) * 2008-03-05 2015-06-24 ハナジー・ハイ−テク・パワー・（エイチケー）・リミテッド 薄膜太陽電池セルのための緩衝層蒸着
DE212009000032U1 (de) 2008-03-05 2010-11-04 Global Solar Energy, Inc., Tuscon System zum Aufbringen einer Chalcogenid-Pufferschicht auf einen flexiblen Träger
JP4540724B2 (ja) * 2008-05-20 2010-09-08 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の製造方法
JP5192990B2 (ja) * 2008-11-11 2013-05-08 光洋應用材料科技股▲分▼有限公司 銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途
JP2011023520A (ja) * 2009-07-15 2011-02-03 Panasonic Electric Works Co Ltd ｐ型半導体膜及び太陽電池
US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
CN102046836B (zh) * 2009-07-27 2012-10-03 Jx日矿日石金属株式会社 Cu-Ga烧结体溅射靶及该靶的制造方法
EP2476016B1 (en) * 2009-09-08 2017-06-14 Koninklijke Philips N.V. Imaging measurement system with a printed photodetector array
JP5639816B2 (ja) * 2009-09-08 2014-12-10 東京応化工業株式会社 塗布方法及び塗布装置
US20110076798A1 (en) * 2009-09-28 2011-03-31 Rohm And Haas Electronic Materials Llc Dichalcogenide ink containing selenium and methods of making and using same
JP5782672B2 (ja) * 2009-11-06 2015-09-24 凸版印刷株式会社 化合物半導体薄膜作製用インク、そのインクを用いて得た化合物半導体薄膜、その化合物半導体薄膜を備える太陽電池、及びその太陽電池の製造方法
KR101271753B1 (ko) * 2009-11-20 2013-06-05 한국전자통신연구원 박막형 광 흡수층의 제조 방법, 이를 이용한 박막 태양전지 제조 방법 및 박막 태양전지
JP2011165790A (ja) * 2010-02-08 2011-08-25 Fujifilm Corp 太陽電池およびその製造方法
CN101853885A (zh) * 2010-02-10 2010-10-06 昆山正富机械工业有限公司 太阳能吸收层浆料的制造方法、该浆料及吸收层
CN101826574A (zh) * 2010-02-10 2010-09-08 昆山正富机械工业有限公司 非真空制作铜铟镓硒光吸收层的方法
CN101818375A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 以非真空工艺制作铜铟镓硒(硫)光吸收层的方法
CN101820025A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 以非真空工艺制作铜铟镓硒(硫)光吸收层的方法
CN101820032A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 一种非真空环境下配置铜铟镓硒浆料制作光吸收层的方法
CN101789470A (zh) * 2010-02-12 2010-07-28 昆山正富机械工业有限公司 非真空制作铜铟镓硒吸收层的方法
US8709917B2 (en) * 2010-05-18 2014-04-29 Rohm And Haas Electronic Materials Llc Selenium/group 3A ink and methods of making and using same
CN101937943A (zh) * 2010-08-30 2011-01-05 浙江尚越光电科技有限公司 镓铟原子比梯度分布的薄膜太阳能电池吸收层的制备方法
CN101944556A (zh) * 2010-09-17 2011-01-12 浙江尚越光电科技有限公司 一种高均匀度铜铟镓硒吸收层制备方法
WO2012043242A1 (ja) * 2010-09-29 2012-04-05 京セラ株式会社 光電変換装置および光電変換装置の製造方法
CN103443929A (zh) * 2010-12-27 2013-12-11 凸版印刷株式会社 化合物半导体薄膜太阳能电池及其制造方法
CN102569514B (zh) * 2012-01-04 2014-07-30 中国科学院合肥物质科学研究院 一种制备铜铟镓硒太阳能电池光吸收层的方法
US9780238B2 (en) 2012-01-13 2017-10-03 The Regents Of The University Of California Metal-chalcogenide photovoltaic device with metal-oxide nanoparticle window layer
EP2647595A2 (en) * 2012-04-03 2013-10-09 Neo Solar Power Corp. Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same
CN103915516B (zh) * 2013-01-07 2016-05-18 厦门神科太阳能有限公司 一种cigs基薄膜光伏材料的钠掺杂方法
JP6126867B2 (ja) * 2013-02-25 2017-05-10 東京応化工業株式会社 塗布装置及び塗布方法
CN107078180B (zh) * 2014-02-14 2020-12-11 新南创新有限公司 一种光伏电池及其制造方法

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EP0743686A3 (en) * 1995-05-15 1998-12-02 Matsushita Electric Industrial Co., Ltd Precursor for semiconductor thin films and method for producing semiconductor thin films
US6268014B1 (en) * 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
WO2001037324A1 (en) * 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
US7091136B2 (en) * 2001-04-16 2006-08-15 Basol Bulent M Method of forming semiconductor compound film for fabrication of electronic device and film produced by same
EP1556902A4 (en) * 2002-09-30 2009-07-29 Miasole MANUFACTURING DEVICE AND METHOD FOR PRODUCING THIN FILM SOLAR CELLS IN A LARGE SCALE
US7605328B2 (en) * 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
US7374963B2 (en) * 2004-03-15 2008-05-20 Solopower, Inc. Technique and apparatus for depositing thin layers of semiconductors for solar cell fabrication

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