JP2009528680A - カルコゲン層の高スループット印刷および金属間化合物材料の使用 - Google Patents

カルコゲン層の高スループット印刷および金属間化合物材料の使用 Download PDF

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JP2009528680A
JP2009528680A JP2008556559A JP2008556559A JP2009528680A JP 2009528680 A JP2009528680 A JP 2009528680A JP 2008556559 A JP2008556559 A JP 2008556559A JP 2008556559 A JP2008556559 A JP 2008556559A JP 2009528680 A JP2009528680 A JP 2009528680A
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particles
layer
group
chalcogen
precursor layer
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JP2008556559A
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Japanese (ja)
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JP2009528680A5 (enExample
Inventor
デューレン、イェルーン カー．イェー． ファン
アール． レイドルム、クレイグ
アール． ロビンソン、マシュー
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Van Duren Jeroen KJ
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Van Duren Jeroen KJ
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Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Application filed by Van Duren Jeroen KJ filed Critical Van Duren Jeroen KJ
Publication of JP2009528680A publication Critical patent/JP2009528680A/ja
Publication of JP2009528680A5 publication Critical patent/JP2009528680A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1225—Deposition of multilayers of inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1241—Metallic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1262—Process of deposition of the inorganic material involving particles, e.g. carbon nanotubes [CNT], flakes
    • C23C18/127—Preformed particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
JP2008556559A 2006-02-23 2007-02-23 カルコゲン層の高スループット印刷および金属間化合物材料の使用 Pending JP2009528680A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
PCT/US2007/062694 WO2007101099A2 (en) 2006-02-23 2007-02-23 High-throughput printing of chalcogen layer and the use of an inter-metallic material

Publications (2)

Publication Number Publication Date
JP2009528680A true JP2009528680A (ja) 2009-08-06
JP2009528680A5 JP2009528680A5 (enExample) 2010-04-08

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JP2008556559A Pending JP2009528680A (ja) 2006-02-23 2007-02-23 カルコゲン層の高スループット印刷および金属間化合物材料の使用

Country Status (4)

Country Link
EP (1) EP1992010A2 (enExample)
JP (1) JP2009528680A (enExample)
CN (1) CN101443892B (enExample)
WO (1) WO2007101099A2 (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010116580A (ja) * 2008-11-11 2010-05-27 Solar Applied Materials Technology Corp 銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途
JP2011023520A (ja) * 2009-07-15 2011-02-03 Panasonic Electric Works Co Ltd ｐ型半導体膜及び太陽電池
JP2011068547A (ja) * 2009-09-28 2011-04-07 Rohm & Haas Electronic Materials Llc ジカルコゲナイドインク含有セレンインク、並びにその製造方法および使用方法
JP2011078963A (ja) * 2009-09-08 2011-04-21 Tokyo Ohka Kogyo Co Ltd 塗布方法及び塗布装置
JP2011513992A (ja) * 2008-03-05 2011-04-28 グローバル ソーラー エナジー インコーポレーテッド 緩衝層蒸着のための加熱
JP2011099059A (ja) * 2009-11-06 2011-05-19 Toppan Printing Co Ltd 化合物半導体薄膜作製用インク、そのインクを用いて得た化合物半導体薄膜、その化合物半導体薄膜を備える太陽電池、及びその太陽電池の製造方法
JP2011165790A (ja) * 2010-02-08 2011-08-25 Fujifilm Corp 太陽電池およびその製造方法
JP2011525297A (ja) * 2008-03-05 2011-09-15 グローバル ソーラー エナジー インコーポレーテッド 薄膜太陽電池セルのための緩衝層蒸着
JP2011241396A (ja) * 2010-05-18 2011-12-01 Rohm & Haas Electronic Materials Llc セレン／第３ａ族インク、並びにその製造方法および使用方法
WO2012043242A1 (ja) * 2010-09-29 2012-04-05 京セラ株式会社 光電変換装置および光電変換装置の製造方法
JP2013504057A (ja) * 2009-09-08 2013-02-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 印刷された光検出器アレイを備えた撮像測定システム
KR101271753B1 (ko) * 2009-11-20 2013-06-05 한국전자통신연구원 박막형 광 흡수층의 제조 방법, 이를 이용한 박막 태양전지 제조 방법 및 박막 태양전지
WO2013106836A1 (en) * 2012-01-13 2013-07-18 The Regents Of The University Of California Metal-chalcogenide photovoltaic device with metal-oxide nanoparticle window layer
JP2013216888A (ja) * 2012-04-03 2013-10-24 Delsolar Co Ltd インク組成物、カルコゲニド半導体膜、太陽電池装置及びその製造方法
JP2014161796A (ja) * 2013-02-25 2014-09-08 Tokyo Ohka Kogyo Co Ltd 塗布装置及び塗布方法
US9640705B2 (en) 2008-03-05 2017-05-02 Global Solar Energy, Inc. Feedback for buffer layer deposition

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JP4540724B2 (ja) * 2008-05-20 2010-09-08 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の製造方法
US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
CN102046836B (zh) * 2009-07-27 2012-10-03 Jx日矿日石金属株式会社 Cu-Ga烧结体溅射靶及该靶的制造方法
CN101853885A (zh) * 2010-02-10 2010-10-06 昆山正富机械工业有限公司 太阳能吸收层浆料的制造方法、该浆料及吸收层
CN101826574A (zh) * 2010-02-10 2010-09-08 昆山正富机械工业有限公司 非真空制作铜铟镓硒光吸收层的方法
CN101818375A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 以非真空工艺制作铜铟镓硒(硫)光吸收层的方法
CN101820025A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 以非真空工艺制作铜铟镓硒(硫)光吸收层的方法
CN101820032A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 一种非真空环境下配置铜铟镓硒浆料制作光吸收层的方法
CN101789470A (zh) * 2010-02-12 2010-07-28 昆山正富机械工业有限公司 非真空制作铜铟镓硒吸收层的方法
CN101937943A (zh) * 2010-08-30 2011-01-05 浙江尚越光电科技有限公司 镓铟原子比梯度分布的薄膜太阳能电池吸收层的制备方法
CN101944556A (zh) * 2010-09-17 2011-01-12 浙江尚越光电科技有限公司 一种高均匀度铜铟镓硒吸收层制备方法
CN103443929A (zh) * 2010-12-27 2013-12-11 凸版印刷株式会社 化合物半导体薄膜太阳能电池及其制造方法
CN102569514B (zh) * 2012-01-04 2014-07-30 中国科学院合肥物质科学研究院 一种制备铜铟镓硒太阳能电池光吸收层的方法
CN103915516B (zh) * 2013-01-07 2016-05-18 厦门神科太阳能有限公司 一种cigs基薄膜光伏材料的钠掺杂方法
CN107078180B (zh) * 2014-02-14 2020-12-11 新南创新有限公司 一种光伏电池及其制造方法

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011525297A (ja) * 2008-03-05 2011-09-15 グローバル ソーラー エナジー インコーポレーテッド 薄膜太陽電池セルのための緩衝層蒸着
US9640705B2 (en) 2008-03-05 2017-05-02 Global Solar Energy, Inc. Feedback for buffer layer deposition
US9378947B2 (en) 2008-03-05 2016-06-28 Hanergy Hi-Tech Power (Hk) Limited Buffer layer deposition for thin-film solar cells
JP2011513992A (ja) * 2008-03-05 2011-04-28 グローバル ソーラー エナジー インコーポレーテッド 緩衝層蒸着のための加熱
US9673348B2 (en) 2008-03-05 2017-06-06 Global Solar Energy, Inc. Buffer layer deposition for thin-film solar cells
JP2010116580A (ja) * 2008-11-11 2010-05-27 Solar Applied Materials Technology Corp 銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途
JP2011023520A (ja) * 2009-07-15 2011-02-03 Panasonic Electric Works Co Ltd ｐ型半導体膜及び太陽電池
JP2011078963A (ja) * 2009-09-08 2011-04-21 Tokyo Ohka Kogyo Co Ltd 塗布方法及び塗布装置
JP2013504057A (ja) * 2009-09-08 2013-02-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 印刷された光検出器アレイを備えた撮像測定システム
JP2011068547A (ja) * 2009-09-28 2011-04-07 Rohm & Haas Electronic Materials Llc ジカルコゲナイドインク含有セレンインク、並びにその製造方法および使用方法
JP2011099059A (ja) * 2009-11-06 2011-05-19 Toppan Printing Co Ltd 化合物半導体薄膜作製用インク、そのインクを用いて得た化合物半導体薄膜、その化合物半導体薄膜を備える太陽電池、及びその太陽電池の製造方法
KR101271753B1 (ko) * 2009-11-20 2013-06-05 한국전자통신연구원 박막형 광 흡수층의 제조 방법, 이를 이용한 박막 태양전지 제조 방법 및 박막 태양전지
JP2011165790A (ja) * 2010-02-08 2011-08-25 Fujifilm Corp 太陽電池およびその製造方法
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EP1992010A2 (en) 2008-11-19

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