JP2010512647A5 - - Google Patents

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Publication number
JP2010512647A5
JP2010512647A5 JP2009540413A JP2009540413A JP2010512647A5 JP 2010512647 A5 JP2010512647 A5 JP 2010512647A5 JP 2009540413 A JP2009540413 A JP 2009540413A JP 2009540413 A JP2009540413 A JP 2009540413A JP 2010512647 A5 JP2010512647 A5 JP 2010512647A5
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JP
Japan
Prior art keywords
dopant
group
layer
forming
film
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Pending
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JP2009540413A
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English (en)
Japanese (ja)
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JP2010512647A (ja
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Priority claimed from US11/852,980 external-priority patent/US20080169025A1/en
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Publication of JP2010512647A publication Critical patent/JP2010512647A/ja
Publication of JP2010512647A5 publication Critical patent/JP2010512647A5/ja
Pending legal-status Critical Current

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JP2009540413A 2006-12-08 2007-12-03 Ｉｂｉｉｉａｖｉａ族化合物層のためのドーピング技術 Pending JP2010512647A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US86927606P 2006-12-08 2006-12-08
US87082706P 2006-12-19 2006-12-19
US11/852,980 US20080169025A1 (en) 2006-12-08 2007-09-10 Doping techniques for group ibiiiavia compound layers
PCT/US2007/086300 WO2008127449A2 (en) 2006-12-08 2007-12-03 Doping techniques for group ibiiiavia compound layers

Publications (2)

Publication Number Publication Date
JP2010512647A JP2010512647A (ja) 2010-04-22
JP2010512647A5 true JP2010512647A5 (enExample) 2011-02-10

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ID=39616847

Family Applications (1)

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JP2009540413A Pending JP2010512647A (ja) 2006-12-08 2007-12-03 Ｉｂｉｉｉａｖｉａ族化合物層のためのドーピング技術

Country Status (7)

Country Link
US (1) US20080169025A1 (enExample)
EP (1) EP2097930A2 (enExample)
JP (1) JP2010512647A (enExample)
KR (1) KR20090106513A (enExample)
CN (1) CN101589472B (enExample)
TW (1) TW200834944A (enExample)
WO (1) WO2008127449A2 (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070163640A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US7892413B2 (en) * 2006-09-27 2011-02-22 Solopower, Inc. Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
US8066865B2 (en) * 2008-05-19 2011-11-29 Solopower, Inc. Electroplating methods and chemistries for deposition of group IIIA-group via thin films
US20100140098A1 (en) * 2008-05-15 2010-06-10 Solopower, Inc. Selenium containing electrodeposition solution and methods
US8409418B2 (en) * 2009-02-06 2013-04-02 Solopower, Inc. Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers
US8425753B2 (en) * 2008-05-19 2013-04-23 Solopower, Inc. Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
US20090283411A1 (en) * 2008-05-15 2009-11-19 Serdar Aksu Selenium electroplating chemistries and methods
IT1391802B1 (it) * 2008-11-21 2012-01-27 Consiglio Nazionale Ricerche Metodo di realizzazione di celle solari multistrato a film sottile
EP2399295B1 (en) * 2009-02-20 2019-04-10 Beijing Apollo Ding rong Solar Technology Co., Ltd. Protective layer for large-scale production of thin-film solar cells
US8709856B2 (en) * 2009-03-09 2014-04-29 Zetta Research and Development LLC—AQT Series Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques
DE102009013903A1 (de) * 2009-03-19 2010-09-23 Clariant International Limited Solarzellen mit einer Barriereschicht auf Basis von Polysilazan
US7897020B2 (en) * 2009-04-13 2011-03-01 Miasole Method for alkali doping of thin film photovoltaic materials
WO2010126699A2 (en) 2009-04-29 2010-11-04 Hunter Douglas Industries B.V. Architectural panels with organic photovoltaic interlayers and methods of forming the same
US8277894B2 (en) * 2009-07-16 2012-10-02 Rohm And Haas Electronic Materials Llc Selenium ink and methods of making and using same
US20110048493A1 (en) * 2009-09-02 2011-03-03 Electronics And Telecommunications Research Institute Solar cell
KR101306913B1 (ko) * 2009-09-02 2013-09-10 한국전자통신연구원 태양 전지
US20110067998A1 (en) * 2009-09-20 2011-03-24 Miasole Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing
TW201124544A (en) * 2009-11-24 2011-07-16 Applied Quantum Technology Llc Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same
CN102656701B (zh) * 2009-12-15 2016-05-04 第一太阳能有限公司 光伏窗口层
CN102859046A (zh) * 2009-12-18 2013-01-02 索罗能源公司 Ib/iiia/via族薄膜太阳能吸收器的镀覆化学物
TWI520367B (zh) * 2010-02-09 2016-02-01 陶氏全球科技公司 具透明導電阻擋層之光伏打裝置
TWI405347B (zh) * 2010-07-02 2013-08-11 Gcsol Tech Co Ltd Ｃｉｇｓ太陽能電池
US8048707B1 (en) 2010-10-19 2011-11-01 Miasole Sulfur salt containing CIG targets, methods of making and methods of use thereof
US7935558B1 (en) 2010-10-19 2011-05-03 Miasole Sodium salt containing CIG targets, methods of making and methods of use thereof
US9169548B1 (en) 2010-10-19 2015-10-27 Apollo Precision Fujian Limited Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof
US20120132281A1 (en) * 2010-11-26 2012-05-31 Nexpower Technology Corporation Thin-film solar cell and manufacturing method thereof
US8404512B1 (en) * 2011-03-04 2013-03-26 Solopower, Inc. Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers
TWI538235B (zh) 2011-04-19 2016-06-11 弗里松股份有限公司 薄膜光伏打裝置及製造方法
FR2977078B1 (fr) 2011-06-27 2013-06-28 Saint Gobain Substrat conducteur pour cellule photovoltaique
US8436445B2 (en) * 2011-08-15 2013-05-07 Stion Corporation Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices
KR101896951B1 (ko) * 2011-10-13 2018-09-12 엘지이노텍 주식회사 태양전지 및 이의 제조방법
TWI500170B (zh) * 2011-11-22 2015-09-11 Lu Chung Hsin 製造摻雜Ｂｉ之IB-IIIA-VIA化合物之光吸收層的方法與包含其之太陽能電池
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
CN103258899A (zh) * 2012-02-17 2013-08-21 任丘市永基光电太阳能有限公司 一种柔性不锈钢衬底上cigs吸收层制备方法
US20130213478A1 (en) * 2012-02-21 2013-08-22 Aqt Solar, Inc. Enhancing the Photovoltaic Response of CZTS Thin-Films
CN103296130A (zh) * 2012-03-05 2013-09-11 任丘市永基光电太阳能有限公司 一种柔性不锈钢衬底上CIGS吸收层的Na掺杂方法
KR20130105325A (ko) * 2012-03-12 2013-09-25 한국에너지기술연구원 Ｎａ 무함유 기판을 이용한 ＣＩＧＳ계 박막 태양전지의 제조방법 및 이에 따라 제조된 태양전지
JP5878416B2 (ja) * 2012-03-30 2016-03-08 本田技研工業株式会社 カルコパイライト型太陽電池及びその製造方法
US20140090710A1 (en) * 2012-09-29 2014-04-03 Precursor Energetics, Inc. Ink deposition processes for thin film cigs absorbers
TWI463685B (zh) * 2012-12-17 2014-12-01 Ind Tech Res Inst 多層堆疊的光吸收薄膜與其製造方法及太陽能電池
CN104704617B (zh) 2012-12-21 2018-03-20 弗立泽姆公司 制造添加有钾的薄膜光电装置
KR101450426B1 (ko) * 2013-01-09 2014-10-14 연세대학교 산학협력단 칼코겐화물 흡수층용 나트륨 도핑 용액 및 이를 이용한 박막태양전지 제조방법
KR101458427B1 (ko) * 2013-03-12 2014-11-10 한국에너지기술연구원 성능이 향상된 ci(g)s 박막 제조 방법과 이를 이용한 태양전지.
TWI559560B (zh) * 2013-08-13 2016-11-21 呂宗昕 光吸收層、包含光吸收層的太陽能電池、用以製備光吸收層的前驅物溶液及製造光吸收層的方法
CN103710674B (zh) * 2013-11-26 2017-10-20 山东希格斯新能源有限责任公司 一种制备cigs薄膜太阳能电池工艺方法
KR101485009B1 (ko) * 2013-12-20 2015-01-26 한국생산기술연구원 Cigs계 박막 태양 전지의 제조 방법 및 이에 따른 태양 전지
TWI677105B (zh) 2014-05-23 2019-11-11 瑞士商弗里松股份有限公司 製造薄膜光電子裝置之方法及可藉由該方法獲得的薄膜光電子裝置
TWI661991B (zh) 2014-09-18 2019-06-11 瑞士商弗里松股份有限公司 用於製造薄膜裝置之自組裝圖案化
US10516069B2 (en) * 2014-10-20 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Absorber surface modification
WO2017137271A1 (en) 2016-02-11 2017-08-17 Flisom Ag Self-Assembly Patterning for Fabricating Thin-Film Devices
EP3414780B1 (en) 2016-02-11 2020-12-02 Flisom AG Fabricating thin-film optoelectronic devices with added rubidium and/or cesium
CN105742412A (zh) * 2016-04-28 2016-07-06 中国科学院上海微系统与信息技术研究所 一种薄膜太阳能电池吸收层碱金属掺入方法
EP3627564A1 (de) * 2018-09-22 2020-03-25 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Verfahren zur nachbehandlung einer absorberschicht
CN111326602A (zh) * 2018-12-17 2020-06-23 北京铂阳顶荣光伏科技有限公司 一种铜铟镓硒太阳能薄膜的退火工艺、装置及制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581108A (en) * 1984-01-06 1986-04-08 Atlantic Richfield Company Process of forming a compound semiconductive material
US4547622A (en) * 1984-04-27 1985-10-15 Massachusetts Institute Of Technology Solar cells and photodetectors
US4798660A (en) * 1985-07-16 1989-01-17 Atlantic Richfield Company Method for forming Cu In Se2 films
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
JP3249408B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
US6339013B1 (en) * 1997-05-13 2002-01-15 The Board Of Trustees Of The University Of Arkansas Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells
JP4208281B2 (ja) * 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
JP2001044464A (ja) * 1999-07-28 2001-02-16 Asahi Chem Ind Co Ltd Ｉｂ―ＩＩＩｂ―ＶＩｂ２族化合物半導体層の形成方法、薄膜太陽電池の製造方法
US6441301B1 (en) * 2000-03-23 2002-08-27 Matsushita Electric Industrial Co., Ltd. Solar cell and method of manufacturing the same
US7842882B2 (en) * 2004-03-01 2010-11-30 Basol Bulent M Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth
AU2003207295A1 (en) * 2002-02-14 2003-09-04 Honda Giken Kogyo Kabushiki Kaisha Light absorbing layer forming method
US20050056863A1 (en) * 2003-09-17 2005-03-17 Matsushita Electric Industrial Co., Ltd. Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell
US7374963B2 (en) * 2004-03-15 2008-05-20 Solopower, Inc. Technique and apparatus for depositing thin layers of semiconductors for solar cell fabrication
CN100463230C (zh) * 2004-05-11 2009-02-18 本田技研工业株式会社 黄铜矿型薄膜太阳能电池的制造方法
WO2006053128A2 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Pallet based system for forming thin-film solar cells
JP4471855B2 (ja) * 2005-01-25 2010-06-02 本田技研工業株式会社 カルコパイライト型薄膜太陽電池の製造方法

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