CN101589472B - 形成用于太阳能电池的吸收层的多层结构及方法 - Google Patents

形成用于太阳能电池的吸收层的多层结构及方法 Download PDF

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Publication number
CN101589472B
CN101589472B CN2007800502716A CN200780050271A CN101589472B CN 101589472 B CN101589472 B CN 101589472B CN 2007800502716 A CN2007800502716 A CN 2007800502716A CN 200780050271 A CN200780050271 A CN 200780050271A CN 101589472 B CN101589472 B CN 101589472B
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China
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dopant
layer
group
containing film
precursor
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Expired - Fee Related
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Chinese (zh)
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CN101589472A (zh
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Y·玛图斯
布林特·M·巴索
S·阿克苏
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SoloPower Inc
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SoloPower Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H10F77/1265—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS] characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Photovoltaic Devices (AREA)
CN2007800502716A 2006-12-08 2007-12-03 形成用于太阳能电池的吸收层的多层结构及方法 Expired - Fee Related CN101589472B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US86927606P 2006-12-08 2006-12-08
US60/869,276 2006-12-08
US87082706P 2006-12-19 2006-12-19
US60/870,827 2006-12-19
US11/852,980 2007-09-10
US11/852,980 US20080169025A1 (en) 2006-12-08 2007-09-10 Doping techniques for group ibiiiavia compound layers
PCT/US2007/086300 WO2008127449A2 (en) 2006-12-08 2007-12-03 Doping techniques for group ibiiiavia compound layers

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Publication Number Publication Date
CN101589472A CN101589472A (zh) 2009-11-25
CN101589472B true CN101589472B (zh) 2012-09-05

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Country Link
US (1) US20080169025A1 (enExample)
EP (1) EP2097930A2 (enExample)
JP (1) JP2010512647A (enExample)
KR (1) KR20090106513A (enExample)
CN (1) CN101589472B (enExample)
TW (1) TW200834944A (enExample)
WO (1) WO2008127449A2 (enExample)

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Also Published As

Publication number Publication date
KR20090106513A (ko) 2009-10-09
JP2010512647A (ja) 2010-04-22
WO2008127449A2 (en) 2008-10-23
CN101589472A (zh) 2009-11-25
TW200834944A (en) 2008-08-16
EP2097930A2 (en) 2009-09-09
WO2008127449A3 (en) 2009-01-15
US20080169025A1 (en) 2008-07-17

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