JP2010512647A - Ｉｂｉｉｉａｖｉａ族化合物層のためのドーピング技術 - Google Patents

Ｉｂｉｉｉａｖｉａ族化合物層のためのドーピング技術 Download PDF

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JP2010512647A
JP2010512647A JP2009540413A JP2009540413A JP2010512647A JP 2010512647 A JP2010512647 A JP 2010512647A JP 2009540413 A JP2009540413 A JP 2009540413A JP 2009540413 A JP2009540413 A JP 2009540413A JP 2010512647 A JP2010512647 A JP 2010512647A
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dopant
layer
group
providing film
precursor
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JP2010512647A5 (enExample
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マトゥス、ユリー
ベイソル、ブレント・エム．
アクス、サーダー
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ソロパワー、インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H10F77/1265—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS] characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Photovoltaic Devices (AREA)
JP2009540413A 2006-12-08 2007-12-03 Ｉｂｉｉｉａｖｉａ族化合物層のためのドーピング技術 Pending JP2010512647A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US86927606P 2006-12-08 2006-12-08
US87082706P 2006-12-19 2006-12-19
US11/852,980 US20080169025A1 (en) 2006-12-08 2007-09-10 Doping techniques for group ibiiiavia compound layers
PCT/US2007/086300 WO2008127449A2 (en) 2006-12-08 2007-12-03 Doping techniques for group ibiiiavia compound layers

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JP2010512647A true JP2010512647A (ja) 2010-04-22
JP2010512647A5 JP2010512647A5 (enExample) 2011-02-10

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JP2009540413A Pending JP2010512647A (ja) 2006-12-08 2007-12-03 Ｉｂｉｉｉａｖｉａ族化合物層のためのドーピング技術

Country Status (7)

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US (1) US20080169025A1 (enExample)
EP (1) EP2097930A2 (enExample)
JP (1) JP2010512647A (enExample)
KR (1) KR20090106513A (enExample)
CN (1) CN101589472B (enExample)
TW (1) TW200834944A (enExample)
WO (1) WO2008127449A2 (enExample)

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KR101860172B1 (ko) 2011-06-27 2018-05-21 쌩-고벵 글래스 프랑스 광전지용 도전성 기판

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US8066865B2 (en) * 2008-05-19 2011-11-29 Solopower, Inc. Electroplating methods and chemistries for deposition of group IIIA-group via thin films
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US8409418B2 (en) * 2009-02-06 2013-04-02 Solopower, Inc. Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers
US8425753B2 (en) * 2008-05-19 2013-04-23 Solopower, Inc. Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
US20090283411A1 (en) * 2008-05-15 2009-11-19 Serdar Aksu Selenium electroplating chemistries and methods
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US8277894B2 (en) * 2009-07-16 2012-10-02 Rohm And Haas Electronic Materials Llc Selenium ink and methods of making and using same
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CN102859046A (zh) * 2009-12-18 2013-01-02 索罗能源公司 Ib/iiia/via族薄膜太阳能吸收器的镀覆化学物
TWI520367B (zh) * 2010-02-09 2016-02-01 陶氏全球科技公司 具透明導電阻擋層之光伏打裝置
TWI405347B (zh) * 2010-07-02 2013-08-11 Gcsol Tech Co Ltd Ｃｉｇｓ太陽能電池
US8048707B1 (en) 2010-10-19 2011-11-01 Miasole Sulfur salt containing CIG targets, methods of making and methods of use thereof
US7935558B1 (en) 2010-10-19 2011-05-03 Miasole Sodium salt containing CIG targets, methods of making and methods of use thereof
US9169548B1 (en) 2010-10-19 2015-10-27 Apollo Precision Fujian Limited Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof
US20120132281A1 (en) * 2010-11-26 2012-05-31 Nexpower Technology Corporation Thin-film solar cell and manufacturing method thereof
US8404512B1 (en) * 2011-03-04 2013-03-26 Solopower, Inc. Crystallization methods for preparing group IBIIIAVIA thin film solar absorbers
TWI538235B (zh) 2011-04-19 2016-06-11 弗里松股份有限公司 薄膜光伏打裝置及製造方法
US8436445B2 (en) * 2011-08-15 2013-05-07 Stion Corporation Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices
KR101896951B1 (ko) * 2011-10-13 2018-09-12 엘지이노텍 주식회사 태양전지 및 이의 제조방법
TWI500170B (zh) * 2011-11-22 2015-09-11 Lu Chung Hsin 製造摻雜Ｂｉ之IB-IIIA-VIA化合物之光吸收層的方法與包含其之太陽能電池
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
CN103258899A (zh) * 2012-02-17 2013-08-21 任丘市永基光电太阳能有限公司 一种柔性不锈钢衬底上cigs吸收层制备方法
US20130213478A1 (en) * 2012-02-21 2013-08-22 Aqt Solar, Inc. Enhancing the Photovoltaic Response of CZTS Thin-Films
CN103296130A (zh) * 2012-03-05 2013-09-11 任丘市永基光电太阳能有限公司 一种柔性不锈钢衬底上CIGS吸收层的Na掺杂方法
KR20130105325A (ko) * 2012-03-12 2013-09-25 한국에너지기술연구원 Ｎａ 무함유 기판을 이용한 ＣＩＧＳ계 박막 태양전지의 제조방법 및 이에 따라 제조된 태양전지
US20140090710A1 (en) * 2012-09-29 2014-04-03 Precursor Energetics, Inc. Ink deposition processes for thin film cigs absorbers
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CN104704617B (zh) 2012-12-21 2018-03-20 弗立泽姆公司 制造添加有钾的薄膜光电装置
KR101450426B1 (ko) * 2013-01-09 2014-10-14 연세대학교 산학협력단 칼코겐화물 흡수층용 나트륨 도핑 용액 및 이를 이용한 박막태양전지 제조방법
KR101458427B1 (ko) * 2013-03-12 2014-11-10 한국에너지기술연구원 성능이 향상된 ci(g)s 박막 제조 방법과 이를 이용한 태양전지.
TWI559560B (zh) * 2013-08-13 2016-11-21 呂宗昕 光吸收層、包含光吸收層的太陽能電池、用以製備光吸收層的前驅物溶液及製造光吸收層的方法
CN103710674B (zh) * 2013-11-26 2017-10-20 山东希格斯新能源有限责任公司 一种制备cigs薄膜太阳能电池工艺方法
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JP2013214548A (ja) * 2012-03-30 2013-10-17 Honda Motor Co Ltd カルコパイライト型太陽電池及びその製造方法

Also Published As

Publication number Publication date
KR20090106513A (ko) 2009-10-09
WO2008127449A2 (en) 2008-10-23
CN101589472A (zh) 2009-11-25
TW200834944A (en) 2008-08-16
CN101589472B (zh) 2012-09-05
EP2097930A2 (en) 2009-09-09
WO2008127449A3 (en) 2009-01-15
US20080169025A1 (en) 2008-07-17

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