KR20090106513A - Ⅰｂⅲａⅵａ 족 화합물 층들을 위한 도핑 기술들 - Google Patents

Ⅰｂⅲａⅵａ 족 화합물 층들을 위한 도핑 기술들 Download PDF

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Publication number
KR20090106513A
KR20090106513A KR1020097014297A KR20097014297A KR20090106513A KR 20090106513 A KR20090106513 A KR 20090106513A KR 1020097014297 A KR1020097014297 A KR 1020097014297A KR 20097014297 A KR20097014297 A KR 20097014297A KR 20090106513 A KR20090106513 A KR 20090106513A
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South Korea
Prior art keywords
dopant
layer
group
group via
metal precursor
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Ceased
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KR1020097014297A
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English (en)
Korean (ko)
Inventor
유리 마터스
블런트 엠. 바졸
세르다르 아크수
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솔로파워, 인코포레이티드
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Publication of KR20090106513A publication Critical patent/KR20090106513A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H10F77/1265—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS] characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Photovoltaic Devices (AREA)
KR1020097014297A 2006-12-08 2007-12-03 Ⅰｂⅲａⅵａ 족 화합물 층들을 위한 도핑 기술들 Ceased KR20090106513A (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US86927606P 2006-12-08 2006-12-08
US60/869,276 2006-12-08
US87082706P 2006-12-19 2006-12-19
US60/870,827 2006-12-19
US11/852,980 2007-09-10
US11/852,980 US20080169025A1 (en) 2006-12-08 2007-09-10 Doping techniques for group ibiiiavia compound layers
PCT/US2007/086300 WO2008127449A2 (en) 2006-12-08 2007-12-03 Doping techniques for group ibiiiavia compound layers

Publications (1)

Publication Number Publication Date
KR20090106513A true KR20090106513A (ko) 2009-10-09

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KR1020097014297A Ceased KR20090106513A (ko) 2006-12-08 2007-12-03 Ⅰｂⅲａⅵａ 족 화합물 층들을 위한 도핑 기술들

Country Status (7)

Country Link
US (1) US20080169025A1 (enExample)
EP (1) EP2097930A2 (enExample)
JP (1) JP2010512647A (enExample)
KR (1) KR20090106513A (enExample)
CN (1) CN101589472B (enExample)
TW (1) TW200834944A (enExample)
WO (1) WO2008127449A2 (enExample)

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KR20130040019A (ko) * 2011-10-13 2013-04-23 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101450426B1 (ko) * 2013-01-09 2014-10-14 연세대학교 산학협력단 칼코겐화물 흡수층용 나트륨 도핑 용액 및 이를 이용한 박막태양전지 제조방법
KR101458427B1 (ko) * 2013-03-12 2014-11-10 한국에너지기술연구원 성능이 향상된 ci(g)s 박막 제조 방법과 이를 이용한 태양전지.
KR101485009B1 (ko) * 2013-12-20 2015-01-26 한국생산기술연구원 Cigs계 박막 태양 전지의 제조 방법 및 이에 따른 태양 전지

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US8425753B2 (en) * 2008-05-19 2013-04-23 Solopower, Inc. Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
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US8709856B2 (en) * 2009-03-09 2014-04-29 Zetta Research and Development LLC—AQT Series Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques
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US8048707B1 (en) 2010-10-19 2011-11-01 Miasole Sulfur salt containing CIG targets, methods of making and methods of use thereof
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US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
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KR20130105325A (ko) * 2012-03-12 2013-09-25 한국에너지기술연구원 Ｎａ 무함유 기판을 이용한 ＣＩＧＳ계 박막 태양전지의 제조방법 및 이에 따라 제조된 태양전지
JP5878416B2 (ja) * 2012-03-30 2016-03-08 本田技研工業株式会社 カルコパイライト型太陽電池及びその製造方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130040019A (ko) * 2011-10-13 2013-04-23 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101450426B1 (ko) * 2013-01-09 2014-10-14 연세대학교 산학협력단 칼코겐화물 흡수층용 나트륨 도핑 용액 및 이를 이용한 박막태양전지 제조방법
KR101458427B1 (ko) * 2013-03-12 2014-11-10 한국에너지기술연구원 성능이 향상된 ci(g)s 박막 제조 방법과 이를 이용한 태양전지.
KR101485009B1 (ko) * 2013-12-20 2015-01-26 한국생산기술연구원 Cigs계 박막 태양 전지의 제조 방법 및 이에 따른 태양 전지

Also Published As

Publication number Publication date
WO2008127449A3 (en) 2009-01-15
US20080169025A1 (en) 2008-07-17
WO2008127449A2 (en) 2008-10-23
TW200834944A (en) 2008-08-16
EP2097930A2 (en) 2009-09-09
CN101589472B (zh) 2012-09-05
JP2010512647A (ja) 2010-04-22
CN101589472A (zh) 2009-11-25

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