JP2009076842A - 太陽電池の薄膜組成用インクとその製造方法、これを利用したcigs薄膜型太陽電池、及びその製造方法 - Google Patents
太陽電池の薄膜組成用インクとその製造方法、これを利用したcigs薄膜型太陽電池、及びその製造方法 Download PDFInfo
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- -1 aromatic selenol Chemical class 0.000 claims description 11
- 239000003960 organic solvent Substances 0.000 claims description 11
- 229910052717 sulfur Inorganic materials 0.000 claims description 11
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 10
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- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 8
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- 150000002430 hydrocarbons Chemical class 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 claims description 4
- GSNUFIFRDBKVIE-UHFFFAOYSA-N DMF Natural products CC1=CC=C(C)O1 GSNUFIFRDBKVIE-UHFFFAOYSA-N 0.000 claims description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 4
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- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
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- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RLWNPPOLRLYUAH-UHFFFAOYSA-N [O-2].[In+3].[Cu+2] Chemical compound [O-2].[In+3].[Cu+2] RLWNPPOLRLYUAH-UHFFFAOYSA-N 0.000 description 1
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- 150000001298 alcohols Chemical class 0.000 description 1
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- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
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- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
【解決手段】本発明は、ナノ粒子を含有する太陽電池の薄膜組成用インクとその製造方法、及び前記ナノ粒子を含有するインクを背面電極上に塗布又は印刷して形成した光吸収層を少なくとも1つ以上包含するCIGS薄膜型太陽電池とその製造方法によって本発明の課題を解決する。前記光吸収層は、構成成分としてCu、In、Ga及びSe元素を含有し、これらの元素は、少なくともCu2Seナノ粒子及び(In、Ga)2Se3ナノ粒子を含有するインクを前記背面電極上に塗布又は印刷した後、これを熱処理して形成することを特徴とする。
【選択図】図2
Description
102:基板
103:背面電極
104:光吸収層
105:バッファー層
106:ウィンドウ層
107:反射防止膜
108:前面電極(Grid)
Claims (20)
- Cu、In、Ga、Se及びSの中のいずれか1つ以上の元素を包含し、Cu2(Se1−xSx)ナノ粒子及び(In、Ga)2(Se1−ySy)3ナノ粒子を含有するインクを背面電極上に塗布又は印刷して形成した光吸収層を少なくとも1つ以上包含することを特徴とするCIGS薄膜型太陽電池。
但し、前記ナノ粒子の化学式におけるxとyの範囲はそれぞれ0≦x≦1、0≦y≦1である。 - 前記インクは、In2(Se1−zSz)3ナノ粒子をさらに含有することを特徴とする請求項1に記載のCIGS薄膜型太陽電池。
但し、前記ナノ粒子の化学式におけるzの範囲は0≦z≦1である。 - Cu、In、Ga、Se及びSの中のいずれか1つ以上の元素を包含する化合物が0.01〜100nmの粒径で含有されるとともに、分散剤及び界面活性剤が0〜10%包含されてなる光吸収層を少なくとも1つ以上具備するCIGS薄膜型太陽電池。
- 基板上に順次形成された背面電極、光吸収層、前面電極層を包含してなるCIGS薄膜型太陽電池において、
前記光吸収層は、Cu、In、Ga、Se及びSの中のいずれか1つ以上の元素を包含し、Cu2(Se1−xSx)ナノ粒子及び(In、Ga)2(Se1−ySy)3ナノ粒子を含有するインクを前記背面電極上に塗布又は印刷して形成することを特徴とするCIGS薄膜型太陽電池。
但し、前記ナノ粒子の化学式におけるxとyの範囲はそれぞれ0≦x≦1、0≦y≦1である。 - 前記インクは、In2(Se1−zSz)3ナノ粒子をさらに包含することを特徴とする請求項4に記載のCIGS薄膜型太陽電池。
但し、前記ナノ粒子の化学式におけるzの範囲は0≦z≦1である。 - 前記光吸収層に存在するGa/(In+Ga)又はCu/(In+Ga)の成分比は、前記Cu2(Se1−xSx)ナノ粒子及び(In、Ga)2(Se1−ySy)3ナノ粒子の混合比によって調節することを特徴とする請求項1又は請求項4のいずれかに記載のCIGS薄膜型太陽電池。
- 前記光吸収層に存在するGa/(In+Ga)の成分比が0.3〜0.6の範囲を満たすことを特徴とする請求項1、請求項3、及び請求項4のいずれか1項に記載のCIGS薄膜型太陽電池。
- 有機溶媒にCu2(Se1−xSx)ナノ粒子、(In、Ga)2(Se1−ySy)3ナノ粒子、及びIn2(Se1−zSz)3ナノ粒子で構成された群の中の少なくとも1種以上の物質を混合して組成したことを特徴とする太陽電池の薄膜組成用インク。
但し、前記ナノ粒子の化学式におけるxとy及びzの範囲はそれぞれ0≦x≦1、0≦y≦1、0≦z≦1である。 - 前記有機溶媒は、トルエン、クロロホルム、DMF、DMSO、ピリジン、アルコール、炭化水素類で構成された群から選択される1種以上であることを特徴とする請求項8に記載の太陽電池の薄膜組成用インク。
- 前記インクは、分散剤をさらに包含することを特徴とする請求項8に記載の太陽電池の薄膜組成用インク。
- 前記分散剤は、アルカン・セレノール、アルカン・チオール、アルコール、芳香族セレノール、芳香族チオール、芳香族アルコールで構成された群の中から選択される1種以上であることを特徴とする請求項10に記載の太陽電池の薄膜組成用インク。
- 有機溶媒にCu2(Se1−xSx)ナノ粒子、(In、Ga)2(Se1−ySy)3ナノ粒子、及びIn2(Se1−zSz)3ナノ粒子で構成された群の中の少なくとも1種以上の物質を混合する工程、及び、
前記混合液に分散剤をさらに混合して熱処理する工程を包含する太陽電池の薄膜組成用インクの製造方法。
但し、前記ナノ粒子の化学式におけるxとy及びzの範囲はそれぞれ0≦x≦1、0≦y≦1、0≦z≦1である。 - 前記有機溶媒は、トルエン、クロロホルム、DMF、DMSO、ピリジン、アルコール、炭化水素類で構成された群から選択される1種以上であることを特徴とする請求項12に記載の太陽電池の薄膜組成用インクの製造方法。
- 前記分散剤は、アルカン・セレノール、アルカン・チオール、アルコール、芳香族セレノール、芳香族チオール、芳香族アルコールで構成された群の中から選択される1種以上であることを特徴とする請求項12に記載の太陽電池の薄膜組成用インクの製造方法。
- 前記熱処理工程は、セレン(Se)又は硫黄(S)の雰囲気下500℃〜600℃で行われることを特徴とする請求項12に記載の太陽電池の薄膜組成用インクの製造方法。
- 基板上に形成された背面電極上にCu2(Se1−xSx)ナノ粒子、(In、Ga)2(Se1−ySy)3ナノ粒子、及びIn2(Se1−zSz)3ナノ粒子によって構成された群の中の少なくとも1種以上の物質を含有するインクを塗布又は印刷する工程、及び、
前記インクを熱処理して光吸収層を形成する工程を包含するCIGS薄膜型太陽電池の製造方法。
但し、前記ナノ粒子の化学式におけるxとy及びzの範囲はそれぞれ0≦x≦1、0≦y≦1、0≦z≦1である。 - 前記熱処理して形成した前記光吸収層上に、(In、Ga)2(Se1−wSw)3ナノ粒子を含有するインクを塗布又は印刷する工程、及び
熱処理する工程を含む請求項16に記載のCIGS薄膜型太陽電池の製造方法。
但し、前記ナノ粒子の化学式におけるwの範囲は0≦w≦1である。 - 基板上に形成された背面電極上に、
(In、Ga)2(Se1−aSa)3ナノ粒子を含有するインクを塗布又は印刷した後、前記のインクを熱処理して形成される第1光吸収層と、
Cu2(Se1−bSb)ナノ粒子を含有するインクを塗布又は印刷した後、熱処理して形成される第2光吸収層とを、交互にかつ複数個の層に積層する工程を含むCIGS薄膜型太陽電池の製造方法。
但し、前記ナノ粒子の化学式におけるaとbの範囲はそれぞれ0≦a≦1、0≦b≦1である。 - 前記熱処理工程はセレン(Se)又は硫黄(S)の雰囲気下500℃〜600℃で行われることを特徴とする請求項16乃至請求項18のいずれか1項に記載のCIGS薄膜型太陽電池の製造方法。
- 前記ナノ粒子の粒径は0.01〜100nmであることを特徴とする請求項16乃至請求項18のいずれか1項に記載のCIGS薄膜型太陽電池の製造方法。
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- 2008-01-31 JP JP2008021019A patent/JP2009076842A/ja active Pending
- 2008-03-14 EP EP08102632.0A patent/EP2040305B1/en not_active Not-in-force
- 2008-04-11 US US12/081,238 patent/US20100319776A1/en not_active Abandoned
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2011
- 2011-12-27 US US13/338,136 patent/US8597973B2/en not_active Expired - Fee Related
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JP2011068547A (ja) * | 2009-09-28 | 2011-04-07 | Rohm & Haas Electronic Materials Llc | ジカルコゲナイドインク含有セレンインク、並びにその製造方法および使用方法 |
JP2011099059A (ja) * | 2009-11-06 | 2011-05-19 | Toppan Printing Co Ltd | 化合物半導体薄膜作製用インク、そのインクを用いて得た化合物半導体薄膜、その化合物半導体薄膜を備える太陽電池、及びその太陽電池の製造方法 |
JP2011114109A (ja) * | 2009-11-26 | 2011-06-09 | Kyocera Corp | 半導体層の製造方法および光電変換装置の製造方法 |
JP5261581B2 (ja) * | 2010-01-29 | 2013-08-14 | 京セラ株式会社 | 半導体層の製造方法、光電変換装置の製造方法および半導体層形成用溶液 |
JP2011165790A (ja) * | 2010-02-08 | 2011-08-25 | Fujifilm Corp | 太陽電池およびその製造方法 |
JP2013519505A (ja) * | 2010-02-10 | 2013-05-30 | イムラ アメリカ インコーポレイテッド | パルスレーザ溶発によるナノ粒子溶液の製造 |
WO2011118716A1 (ja) * | 2010-03-25 | 2011-09-29 | 京セラ株式会社 | 光電変換装置、および光電変換装置の製造方法 |
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JP2011233700A (ja) * | 2010-04-27 | 2011-11-17 | Kyocera Corp | 半導体の製造方法および光電変換装置の製造方法 |
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JP5867392B2 (ja) * | 2010-08-17 | 2016-02-24 | 凸版印刷株式会社 | 化合物半導体薄膜作製用インクおよび太陽電池の製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
KR20090029495A (ko) | 2009-03-23 |
EP2040305A3 (en) | 2012-12-26 |
EP2040305B1 (en) | 2016-03-09 |
KR101144807B1 (ko) | 2012-05-11 |
US8597973B2 (en) | 2013-12-03 |
US20100319776A1 (en) | 2010-12-23 |
US20120100661A1 (en) | 2012-04-26 |
EP2040305A2 (en) | 2009-03-25 |
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