JP2011521477A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2011521477A5 JP2011521477A5 JP2011510675A JP2011510675A JP2011521477A5 JP 2011521477 A5 JP2011521477 A5 JP 2011521477A5 JP 2011510675 A JP2011510675 A JP 2011510675A JP 2011510675 A JP2011510675 A JP 2011510675A JP 2011521477 A5 JP2011521477 A5 JP 2011521477A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- zinc oxide
- epitaxial layer
- group
- oxide based
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5484208P | 2008-05-21 | 2008-05-21 | |
| US61/054,842 | 2008-05-21 | ||
| US6075408P | 2008-06-11 | 2008-06-11 | |
| US61/060,754 | 2008-06-11 | ||
| PCT/US2009/044646 WO2009143226A1 (en) | 2008-05-21 | 2009-05-20 | Zinc-oxide based epitaxial layers and devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011521477A JP2011521477A (ja) | 2011-07-21 |
| JP2011521477A5 true JP2011521477A5 (enExample) | 2012-07-26 |
Family
ID=40851998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011510675A Pending JP2011521477A (ja) | 2008-05-21 | 2009-05-20 | 酸化亜鉛系エピタキシャルの層およびデバイス |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8772829B2 (enExample) |
| EP (1) | EP2304780A1 (enExample) |
| JP (1) | JP2011521477A (enExample) |
| TW (1) | TW201006014A (enExample) |
| WO (2) | WO2009143226A1 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0366921A (ja) * | 1989-08-04 | 1991-03-22 | Kayseven Co Ltd | 回転力伝達手段 |
| JP5647881B2 (ja) * | 2010-12-17 | 2015-01-07 | スタンレー電気株式会社 | 酸化亜鉛系半導体の成長方法 |
| US9236530B2 (en) * | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
| WO2012138414A1 (en) * | 2011-04-06 | 2012-10-11 | Versatilis Llc | Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same |
| JP2014527302A (ja) | 2011-08-17 | 2014-10-09 | ラムゴス インコーポレイテッド | 酸化物半導体基板上の縦型電界効果トランジスタおよびその製造方法 |
| FR2981794B1 (fr) * | 2011-10-21 | 2013-11-01 | Commissariat Energie Atomique | Procede de realisation d'un reseau organise de nanofils semiconducteurs, en particulier en zno |
| JP5644745B2 (ja) * | 2011-12-05 | 2014-12-24 | 豊田合成株式会社 | 半導体発光素子および発光装置 |
| WO2013109628A1 (en) | 2012-01-17 | 2013-07-25 | Ramgoss, Inc. | Rotated channel semiconductor field effect transistor |
| TW201337050A (zh) * | 2012-03-14 | 2013-09-16 | Univ Nat Chiao Tung | 纖鋅礦結構材料之非極性晶面 |
| EP2641996A1 (en) * | 2012-03-23 | 2013-09-25 | Stanley Electric Co., Ltd. | Method for growing magnesium-zinc-oxide-based crystal |
| KR101998339B1 (ko) * | 2012-11-16 | 2019-07-09 | 삼성전자주식회사 | 금속 산화물 반도체의 성장 결정면 제어방법 및 제어된 성장 결정면을 가지는 금속 산화물 반도체 구조물 |
| WO2014092165A1 (ja) * | 2012-12-14 | 2014-06-19 | 日本碍子株式会社 | 酸化亜鉛基板を用いた面発光素子 |
| JPWO2014092167A1 (ja) * | 2012-12-14 | 2017-01-12 | 日本碍子株式会社 | 酸化亜鉛基板を用いた面発光素子 |
| JPWO2014092168A1 (ja) * | 2012-12-14 | 2017-01-12 | 日本碍子株式会社 | 酸化亜鉛基板を用いた面発光素子 |
| WO2014092163A1 (ja) * | 2012-12-14 | 2014-06-19 | 日本碍子株式会社 | 酸化亜鉛基板を用いた面発光素子 |
| TWI514622B (zh) * | 2013-02-19 | 2015-12-21 | Lextar Electronics Corp | 發光二極體晶粒及其製造方法 |
| WO2014185339A1 (ja) * | 2013-05-17 | 2014-11-20 | 日本碍子株式会社 | 光起電力素子 |
| WO2015151902A1 (ja) * | 2014-03-31 | 2015-10-08 | 日本碍子株式会社 | 多結晶窒化ガリウム自立基板及びそれを用いた発光素子 |
| JP2015137189A (ja) * | 2014-01-21 | 2015-07-30 | スタンレー電気株式会社 | Ａｇドープｐ型ＺｎＯ系半導体結晶層 |
| EP3143450B1 (en) | 2014-05-13 | 2018-03-28 | CoeLux S.r.l. | Light source and sunlight imitating lighting system |
| TWI622190B (zh) * | 2014-11-18 | 2018-04-21 | 錼創科技股份有限公司 | 發光元件 |
| US9793248B2 (en) * | 2014-11-18 | 2017-10-17 | PlayNitride Inc. | Light emitting device |
| US10411164B2 (en) * | 2015-09-03 | 2019-09-10 | Seoul Viosys Co., Ltd. | Light-emitting element having ZnO transparent electrode and method for manufacturing same |
| KR102692637B1 (ko) * | 2016-11-24 | 2024-08-06 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 |
| EP3803960B1 (en) | 2018-06-07 | 2023-11-08 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
| CN208489222U (zh) * | 2018-06-28 | 2019-02-12 | 厦门市三安光电科技有限公司 | 一种发光二极管 |
| US11342484B2 (en) | 2020-05-11 | 2022-05-24 | Silanna UV Technologies Pte Ltd | Metal oxide semiconductor-based light emitting device |
| GB2595684A (en) * | 2020-06-03 | 2021-12-08 | Plessey Semiconductors Ltd | Spacer LED architecture for high efficiency micro LED displays |
| KR20240095343A (ko) | 2021-11-10 | 2024-06-25 | 실라나 유브이 테크놀로지스 피티이 리미티드 | 에피택셜 산화물 물질, 구조 및 소자 |
| EP4430674A4 (en) | 2021-11-10 | 2025-10-01 | Silanna UV Technologies Pte Ltd | EPITAXIAL OXIDE MATERIALS, STRUCTURES AND DEVICES |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3813740B2 (ja) * | 1997-07-11 | 2006-08-23 | Ｔｄｋ株式会社 | 電子デバイス用基板 |
| US6291085B1 (en) | 1998-08-03 | 2001-09-18 | The Curators Of The University Of Missouri | Zinc oxide films containing P-type dopant and process for preparing same |
| JP2001072498A (ja) * | 1999-07-08 | 2001-03-21 | Nippon Telegr & Teleph Corp <Ntt> | 酸化物単結晶薄膜およびその加工方法 |
| US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
| TW541723B (en) * | 2001-04-27 | 2003-07-11 | Shinetsu Handotai Kk | Method for manufacturing light-emitting element |
| JP3826755B2 (ja) | 2001-09-28 | 2006-09-27 | 株式会社村田製作所 | ＺｎＯ膜及びその製造方法並びに発光素子 |
| DE60334998D1 (de) * | 2002-08-28 | 2010-12-30 | Moxtronics Inc | Hybridstrahl-beschichtungssystem und verfahren zur herstellung von zno-schichten |
| US6876009B2 (en) * | 2002-12-09 | 2005-04-05 | Nichia Corporation | Nitride semiconductor device and a process of manufacturing the same |
| TW200505042A (en) * | 2003-07-17 | 2005-02-01 | South Epitaxy Corp | LED device |
| JP4544898B2 (ja) * | 2004-04-08 | 2010-09-15 | エア・ウォーター株式会社 | ＺｎＯ膜の成膜方法 |
| US20060124943A1 (en) * | 2004-12-14 | 2006-06-15 | Elite Optoelectronics Inc. | Large-sized light-emitting diodes with improved light extraction efficiency |
| DE102005021099A1 (de) * | 2005-05-06 | 2006-12-07 | Universität Ulm | GaN-Schichten |
| JP4988179B2 (ja) * | 2005-09-22 | 2012-08-01 | ローム株式会社 | 酸化亜鉛系化合物半導体素子 |
| US20070126021A1 (en) * | 2005-12-06 | 2007-06-07 | Yungryel Ryu | Metal oxide semiconductor film structures and methods |
| JP5896442B2 (ja) * | 2006-01-20 | 2016-03-30 | 国立研究開発法人科学技術振興機構 | Ｉｉｉ族窒化物膜の成長方法 |
| WO2008050479A1 (en) * | 2006-10-25 | 2008-05-02 | Stanley Electric Co., Ltd. | ZnO LAYER AND SEMICONDUCTOR LIGHT-EMITTING DEVICE |
| WO2008073469A1 (en) | 2006-12-11 | 2008-06-19 | Lumenz, Llc | Zinc oxide multi-junction photovoltaic cells and optoelectronic devices |
| JP2007129271A (ja) * | 2007-02-13 | 2007-05-24 | Citizen Tohoku Kk | 半導体発光素子及びその製造方法 |
| TW200949004A (en) | 2008-04-25 | 2009-12-01 | Lumenz Inc | Metalorganic chemical vapor deposition of zinc oxide |
-
2009
- 2009-05-20 TW TW098116717A patent/TW201006014A/zh unknown
- 2009-05-20 WO PCT/US2009/044646 patent/WO2009143226A1/en not_active Ceased
- 2009-05-20 JP JP2011510675A patent/JP2011521477A/ja active Pending
- 2009-05-20 WO PCT/US2009/044650 patent/WO2009143229A1/en not_active Ceased
- 2009-05-20 EP EP09751454A patent/EP2304780A1/en not_active Withdrawn
-
2010
- 2010-11-22 US US12/951,308 patent/US8772829B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011521477A5 (enExample) | ||
| JP2011100994A5 (ja) | 半導体装置の作製方法 | |
| JP2012084860A5 (enExample) | ||
| JP2014111527A5 (enExample) | ||
| JP2013028864A5 (ja) | 銀ナノ粒子を製造するプロセスおよび導電性要素を製造するプロセス | |
| BRPI0909305A2 (pt) | Processo e sistema de depósito de um metal ou metaloide sobre nanotubos de carbono | |
| JP2011142310A5 (ja) | 半導体装置の作製方法 | |
| JP2013123045A5 (enExample) | ||
| EP2618365A3 (en) | Method for depositing a chlorine-free conformal SiN film | |
| JP2009509338A5 (enExample) | ||
| JP2012134467A5 (ja) | 半導体装置の作製方法 | |
| JP2010512647A5 (enExample) | ||
| JP2011119720A5 (ja) | 酸化物半導体素子の作製方法 | |
| JP2015079946A5 (enExample) | ||
| WO2010071364A3 (ko) | 금속 박막 또는 금속 산화물 박막 증착용 유기금속 전구체 화합물 및 이를 이용한 박막 증착 방법 | |
| CN104040722B (zh) | 通过低温工艺制造的薄膜半导体 | |
| JP2010283337A5 (enExample) | ||
| JP2012009432A5 (ja) | 蓄電装置の作製方法 | |
| Shabannia et al. | Controllable vertically aligned ZnO nanorods on flexible polyethylene naphthalate (PEN) substrate using chemical bath deposition synthesis | |
| RU2015141001A (ru) | Способ получения поверхностно-обработанного материала из металлического титана или материала из титанового сплава и поверхностно-обработанный материал | |
| JP2010519765A5 (enExample) | ||
| JP2012119672A5 (ja) | 半導体装置の作製方法 | |
| JP2011119246A5 (ja) | 発光装置の作製方法、および発光装置 | |
| JP2013105966A5 (enExample) | ||
| JP2012023350A5 (enExample) |