JP2011521477A - 酸化亜鉛系エピタキシャルの層およびデバイス - Google Patents

酸化亜鉛系エピタキシャルの層およびデバイス Download PDF

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JP2011521477A
JP2011521477A JP2011510675A JP2011510675A JP2011521477A JP 2011521477 A JP2011521477 A JP 2011521477A JP 2011510675 A JP2011510675 A JP 2011510675A JP 2011510675 A JP2011510675 A JP 2011510675A JP 2011521477 A JP2011521477 A JP 2011521477A
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substrate
zinc oxide
epitaxial layer
oxide based
plane
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JP2011521477A5 (enExample
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バンミ ティー． アデコアー，
ジョナサン ピアース，
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ルーメンズ， インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02403—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H10H20/0125—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials with a substrate not being Group II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2011510675A 2008-05-21 2009-05-20 酸化亜鉛系エピタキシャルの層およびデバイス Pending JP2011521477A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US5484208P 2008-05-21 2008-05-21
US61/054,842 2008-05-21
US6075408P 2008-06-11 2008-06-11
US61/060,754 2008-06-11
PCT/US2009/044646 WO2009143226A1 (en) 2008-05-21 2009-05-20 Zinc-oxide based epitaxial layers and devices

Publications (2)

Publication Number Publication Date
JP2011521477A true JP2011521477A (ja) 2011-07-21
JP2011521477A5 JP2011521477A5 (enExample) 2012-07-26

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JP2011510675A Pending JP2011521477A (ja) 2008-05-21 2009-05-20 酸化亜鉛系エピタキシャルの層およびデバイス

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Country Link
US (1) US8772829B2 (enExample)
EP (1) EP2304780A1 (enExample)
JP (1) JP2011521477A (enExample)
TW (1) TW201006014A (enExample)
WO (2) WO2009143226A1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0366921A (ja) * 1989-08-04 1991-03-22 Kayseven Co Ltd 回転力伝達手段
JP2012129459A (ja) * 2010-12-17 2012-07-05 Stanley Electric Co Ltd 酸化亜鉛系半導体の成長方法
WO2014092168A1 (ja) * 2012-12-14 2014-06-19 日本碍子株式会社 酸化亜鉛基板を用いた面発光素子
WO2014092167A1 (ja) * 2012-12-14 2014-06-19 日本碍子株式会社 酸化亜鉛基板を用いた面発光素子
WO2014092163A1 (ja) * 2012-12-14 2014-06-19 日本碍子株式会社 酸化亜鉛基板を用いた面発光素子
WO2014092165A1 (ja) * 2012-12-14 2014-06-19 日本碍子株式会社 酸化亜鉛基板を用いた面発光素子
WO2014185339A1 (ja) * 2013-05-17 2014-11-20 日本碍子株式会社 光起電力素子
JP2015137189A (ja) * 2014-01-21 2015-07-30 スタンレー電気株式会社 Ａｇドープｐ型ＺｎＯ系半導体結晶層

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US9236530B2 (en) * 2011-04-01 2016-01-12 Soraa, Inc. Miscut bulk substrates
US8859412B2 (en) * 2011-04-06 2014-10-14 VerLASE TECHNOLOGIES LLC Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same
US9112048B2 (en) 2011-08-17 2015-08-18 Ramgoss Inc. Vertical field effect transistor on oxide semiconductor substrate
FR2981794B1 (fr) * 2011-10-21 2013-11-01 Commissariat Energie Atomique Procede de realisation d'un reseau organise de nanofils semiconducteurs, en particulier en zno
JP5644745B2 (ja) * 2011-12-05 2014-12-24 豊田合成株式会社 半導体発光素子および発光装置
US8927984B2 (en) 2012-01-17 2015-01-06 Ramgoss, Inc. Rotated channel semiconductor field effect transistor
TW201337050A (zh) * 2012-03-14 2013-09-16 Univ Nat Chiao Tung 纖鋅礦結構材料之非極性晶面
EP2641996A1 (en) * 2012-03-23 2013-09-25 Stanley Electric Co., Ltd. Method for growing magnesium-zinc-oxide-based crystal
KR101998339B1 (ko) 2012-11-16 2019-07-09 삼성전자주식회사 금속 산화물 반도체의 성장 결정면 제어방법 및 제어된 성장 결정면을 가지는 금속 산화물 반도체 구조물
TWI514622B (zh) * 2013-02-19 2015-12-21 Lextar Electronics Corp 發光二極體晶粒及其製造方法
KR101790458B1 (ko) * 2014-03-31 2017-10-25 엔지케이 인슐레이터 엘티디 다결정 질화갈륨 자립 기판 및 그것을 이용한 발광 소자
CA2948554C (en) 2014-05-13 2020-04-21 Coelux S.R.L. Light source and sunlight imitating lighting system
US9793248B2 (en) * 2014-11-18 2017-10-17 PlayNitride Inc. Light emitting device
TWI578581B (zh) * 2014-11-18 2017-04-11 錼創科技股份有限公司 發光元件
CN108352428B (zh) * 2015-09-03 2020-07-14 首尔伟傲世有限公司 具有ZnO透明电极的发光元件及其制造方法
KR102692637B1 (ko) * 2016-11-24 2024-08-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 및 이를 포함하는 반도체 소자 패키지
CN112262463B (zh) 2018-06-07 2024-09-24 斯兰纳Uv科技有限公司 用于形成半导体层的方法和材料沉积系统
CN208489222U (zh) * 2018-06-28 2019-02-12 厦门市三安光电科技有限公司 一种发光二极管
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GB2595684A (en) * 2020-06-03 2021-12-08 Plessey Semiconductors Ltd Spacer LED architecture for high efficiency micro LED displays
WO2023084274A1 (en) 2021-11-10 2023-05-19 Silanna UV Technologies Pte Ltd Epitaxial oxide materials, structures, and devices
JP2024544925A (ja) 2021-11-10 2024-12-05 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッド エピタキシャル酸化物材料、構造、及びデバイス

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JP2005298867A (ja) * 2004-04-08 2005-10-27 Air Water Inc ＺｎＯ膜の成膜方法
JP2007088271A (ja) * 2005-09-22 2007-04-05 Rohm Co Ltd 酸化亜鉛系化合物半導体素子
JP2007129271A (ja) * 2007-02-13 2007-05-24 Citizen Tohoku Kk 半導体発光素子及びその製造方法
WO2008050479A1 (en) * 2006-10-25 2008-05-02 Stanley Electric Co., Ltd. ZnO LAYER AND SEMICONDUCTOR LIGHT-EMITTING DEVICE

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JP2005298867A (ja) * 2004-04-08 2005-10-27 Air Water Inc ＺｎＯ膜の成膜方法
JP2007088271A (ja) * 2005-09-22 2007-04-05 Rohm Co Ltd 酸化亜鉛系化合物半導体素子
WO2008050479A1 (en) * 2006-10-25 2008-05-02 Stanley Electric Co., Ltd. ZnO LAYER AND SEMICONDUCTOR LIGHT-EMITTING DEVICE
JP2007129271A (ja) * 2007-02-13 2007-05-24 Citizen Tohoku Kk 半導体発光素子及びその製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0366921A (ja) * 1989-08-04 1991-03-22 Kayseven Co Ltd 回転力伝達手段
JP2012129459A (ja) * 2010-12-17 2012-07-05 Stanley Electric Co Ltd 酸化亜鉛系半導体の成長方法
WO2014092168A1 (ja) * 2012-12-14 2014-06-19 日本碍子株式会社 酸化亜鉛基板を用いた面発光素子
WO2014092167A1 (ja) * 2012-12-14 2014-06-19 日本碍子株式会社 酸化亜鉛基板を用いた面発光素子
WO2014092163A1 (ja) * 2012-12-14 2014-06-19 日本碍子株式会社 酸化亜鉛基板を用いた面発光素子
WO2014092165A1 (ja) * 2012-12-14 2014-06-19 日本碍子株式会社 酸化亜鉛基板を用いた面発光素子
JPWO2014092163A1 (ja) * 2012-12-14 2017-01-12 日本碍子株式会社 酸化亜鉛基板を用いた面発光素子
US9640720B2 (en) 2012-12-14 2017-05-02 Ngk Insulators, Ltd. Surface light-emission element using zinc oxide substrate
WO2014185339A1 (ja) * 2013-05-17 2014-11-20 日本碍子株式会社 光起電力素子
JPWO2014185339A1 (ja) * 2013-05-17 2017-02-23 日本碍子株式会社 光起電力素子
US9627568B2 (en) 2013-05-17 2017-04-18 Ngk Insulators, Ltd. Photovoltaic element
JP2015137189A (ja) * 2014-01-21 2015-07-30 スタンレー電気株式会社 Ａｇドープｐ型ＺｎＯ系半導体結晶層

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US8772829B2 (en) 2014-07-08
TW201006014A (en) 2010-02-01
WO2009143226A1 (en) 2009-11-26
EP2304780A1 (en) 2011-04-06
US20110062440A1 (en) 2011-03-17
WO2009143229A1 (en) 2009-11-26

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