JP2009540537A5 - - Google Patents

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Publication number
JP2009540537A5
JP2009540537A5 JP2008556570A JP2008556570A JP2009540537A5 JP 2009540537 A5 JP2009540537 A5 JP 2009540537A5 JP 2008556570 A JP2008556570 A JP 2008556570A JP 2008556570 A JP2008556570 A JP 2008556570A JP 2009540537 A5 JP2009540537 A5 JP 2009540537A5
Authority
JP
Japan
Prior art keywords
microflakes
particles
copper
indium
sodium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008556570A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009540537A (ja
Filing date
Publication date
Priority claimed from US11/361,498 external-priority patent/US20070163639A1/en
Priority claimed from US11/361,497 external-priority patent/US20070163638A1/en
Priority claimed from US11/361,688 external-priority patent/US20070169812A1/en
Priority claimed from US11/361,521 external-priority patent/US20070163383A1/en
Priority claimed from US11/362,266 external-priority patent/US20070169813A1/en
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/361,433 external-priority patent/US7700464B2/en
Priority claimed from US11/361,515 external-priority patent/US20070163640A1/en
Priority claimed from US11/395,668 external-priority patent/US8309163B2/en
Priority claimed from US11/394,849 external-priority patent/US20070163641A1/en
Priority claimed from US11/395,426 external-priority patent/US20070163642A1/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Application filed filed Critical
Priority claimed from PCT/US2007/062763 external-priority patent/WO2007101135A2/en
Publication of JP2009540537A publication Critical patent/JP2009540537A/ja
Publication of JP2009540537A5 publication Critical patent/JP2009540537A5/ja
Pending legal-status Critical Current

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JP2008556570A 2006-02-23 2007-02-23 金属間マイクロフレーク粒子による高処理能力の半導体前駆体層印刷 Pending JP2009540537A (ja)

Applications Claiming Priority (14)

Application Number Priority Date Filing Date Title
US11/361,521 US20070163383A1 (en) 2004-02-19 2006-02-23 High-throughput printing of nanostructured semiconductor precursor layer
US11/362,266 US20070169813A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from microflake particles
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/361,433 US7700464B2 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US11/361,515 US20070163640A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US11/361,498 US20070163639A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from microflake particles
US11/361,497 US20070163638A1 (en) 2004-02-19 2006-02-23 Photovoltaic devices printed from nanostructured particles
US11/361,688 US20070169812A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US39619906A 2006-03-30 2006-03-30
US11/395,668 US8309163B2 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US11/394,849 US20070163641A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US11/395,426 US20070163642A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
PCT/US2007/062763 WO2007101135A2 (en) 2006-02-23 2007-02-23 High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles

Publications (2)

Publication Number Publication Date
JP2009540537A JP2009540537A (ja) 2009-11-19
JP2009540537A5 true JP2009540537A5 (enExample) 2010-04-08

Family

ID=38459765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008556570A Pending JP2009540537A (ja) 2006-02-23 2007-02-23 金属間マイクロフレーク粒子による高処理能力の半導体前駆体層印刷

Country Status (4)

Country Link
EP (1) EP1997149A2 (enExample)
JP (1) JP2009540537A (enExample)
CN (1) CN101438416B (enExample)
WO (1) WO2007101135A2 (enExample)

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FR2922046B1 (fr) * 2007-10-05 2011-06-24 Saint Gobain Perfectionnements apportes a des elements capables de collecter de la lumiere
US8322300B2 (en) * 2008-02-07 2012-12-04 Sunpower Corporation Edge coating apparatus with movable roller applicator for solar cell substrates
JP2010129648A (ja) * 2008-11-26 2010-06-10 Kyocera Corp 薄膜太陽電池の製法
JP5383162B2 (ja) * 2008-11-26 2014-01-08 京セラ株式会社 薄膜太陽電池の製法
JP5317648B2 (ja) * 2008-11-26 2013-10-16 京セラ株式会社 薄膜太陽電池の製法
JP5137794B2 (ja) * 2008-11-26 2013-02-06 京セラ株式会社 薄膜太陽電池の製法
CN101931011A (zh) * 2009-06-26 2010-12-29 安泰科技股份有限公司 薄膜太阳能电池及其基带和制备方法
JP2011138837A (ja) * 2009-12-26 2011-07-14 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
CN101826574A (zh) * 2010-02-10 2010-09-08 昆山正富机械工业有限公司 非真空制作铜铟镓硒光吸收层的方法
CN101853885A (zh) * 2010-02-10 2010-10-06 昆山正富机械工业有限公司 太阳能吸收层浆料的制造方法、该浆料及吸收层
CN101820032A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 一种非真空环境下配置铜铟镓硒浆料制作光吸收层的方法
CN101840957A (zh) * 2010-02-11 2010-09-22 昆山正富机械工业有限公司 非真空制作铜铟镓硒浆料的调配方法
CN101840958A (zh) * 2010-02-11 2010-09-22 昆山正富机械工业有限公司 一种非真空制作铜铟镓硒浆料的方法
JP5495849B2 (ja) * 2010-02-25 2014-05-21 京セラ株式会社 半導体層の製造方法および光電変換装置の製造方法
WO2011162865A2 (en) * 2010-06-23 2011-12-29 Applied Materials, Inc. A nucleation promotion layer formed on a substrate to enhance deposition of a transparent conductive layer
JP2012009546A (ja) * 2010-06-23 2012-01-12 Hitachi Ltd 薄膜製造方法、薄膜付基板および薄膜製造装置
CN102464912A (zh) * 2010-11-19 2012-05-23 慧濠光电科技股份有限公司 具有光吸收功能的纳米晶粒的油墨及其制作方法
WO2012075259A1 (en) * 2010-12-03 2012-06-07 E. I. Du Pont De Nemours And Company Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films
JP5764016B2 (ja) * 2011-09-07 2015-08-12 日東電工株式会社 Ｃｉｇｓ膜の製法およびそれを用いるｃｉｇｓ太陽電池の製法
JP5658112B2 (ja) * 2011-09-15 2015-01-21 本田技研工業株式会社 カルコパイライト型太陽電池の製造方法
WO2013109646A1 (en) * 2012-01-19 2013-07-25 NuvoSun, Inc. Protective coatings for photovoltaic cells
DE102012214254A1 (de) * 2012-08-10 2014-05-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laserbasiertes Verfahren und Bearbeitungstisch zur lokalen Kontaktierung eines Halbleiterbauelements
CN104051569B (zh) * 2013-03-12 2017-09-26 台湾积体电路制造股份有限公司 薄膜太阳能电池及其制造方法
KR101638470B1 (ko) 2013-07-19 2016-07-11 주식회사 엘지화학 금속 나노 입자를 포함하는 광흡수층 제조용 잉크 조성물 및 이를 사용한 박막의 제조 방법
CN110240830B (zh) * 2018-03-09 2022-10-18 国家纳米科学中心 基于液态金属颗粒的自烧结导电墨水、其制备方法及应用

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US5383995A (en) * 1979-12-28 1995-01-24 Flex Products, Inc. Method of making optical thin flakes and inks incorporating the same
US5028274A (en) * 1989-06-07 1991-07-02 International Solar Electric Technology, Inc. Group I-III-VI2 semiconductor films for solar cell application
US6013122A (en) * 1998-08-18 2000-01-11 Option Technologies, Inc. Tattoo inks
US7537955B2 (en) * 2001-04-16 2009-05-26 Basol Bulent M Low temperature nano particle preparation and deposition for phase-controlled compound film formation
US7091136B2 (en) * 2001-04-16 2006-08-15 Basol Bulent M Method of forming semiconductor compound film for fabrication of electronic device and film produced by same

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