JP2009528681A - カルコゲンと金属間物質の使用による高処理能力の半導体層形成 - Google Patents

カルコゲンと金属間物質の使用による高処理能力の半導体層形成 Download PDF

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Publication number
JP2009528681A
JP2009528681A JP2008556571A JP2008556571A JP2009528681A JP 2009528681 A JP2009528681 A JP 2009528681A JP 2008556571 A JP2008556571 A JP 2008556571A JP 2008556571 A JP2008556571 A JP 2008556571A JP 2009528681 A JP2009528681 A JP 2009528681A
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particles
chalcogen
chalcogenide
group
precursor
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Pending
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JP2008556571A
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English (en)
Japanese (ja)
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JP2009528681A5 (enExample
Inventor
デューレン、イェルーン カー．イェー． ファン
アール． レイドルム、クレイグ
アール． ロビンソン、マシュー
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Van Duren Jeroen KJ
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Van Duren Jeroen KJ
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Priority claimed from US11/361,498 external-priority patent/US20070163639A1/en
Priority claimed from US11/361,433 external-priority patent/US7700464B2/en
Priority claimed from US11/361,515 external-priority patent/US20070163640A1/en
Priority claimed from US11/361,522 external-priority patent/US20070166453A1/en
Priority claimed from US11/361,523 external-priority patent/US20070169811A1/en
Priority claimed from US11/361,103 external-priority patent/US20070169809A1/en
Priority claimed from US11/361,464 external-priority patent/US20070169810A1/en
Priority claimed from US11/395,438 external-priority patent/US20070163643A1/en
Priority claimed from US11/394,849 external-priority patent/US20070163641A1/en
Priority claimed from US11/395,668 external-priority patent/US8309163B2/en
Application filed by Van Duren Jeroen KJ filed Critical Van Duren Jeroen KJ
Publication of JP2009528681A publication Critical patent/JP2009528681A/ja
Publication of JP2009528681A5 publication Critical patent/JP2009528681A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/11—Making amorphous alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008556571A 2006-02-23 2007-02-23 カルコゲンと金属間物質の使用による高処理能力の半導体層形成 Pending JP2009528681A (ja)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US11/361,522 US20070166453A1 (en) 2004-02-19 2006-02-23 High-throughput printing of chalcogen layer
US11/361,523 US20070169811A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of thermal and chemical gradients
US11/361,103 US20070169809A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides
US11/361,498 US20070163639A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from microflake particles
US11/361,515 US20070163640A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
US11/361,464 US20070169810A1 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor
US11/361,433 US7700464B2 (en) 2004-02-19 2006-02-23 High-throughput printing of semiconductor precursor layer from nanoflake particles
US39619906A 2006-03-30 2006-03-30
US11/394,849 US20070163641A1 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US11/395,668 US8309163B2 (en) 2004-02-19 2006-03-30 High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US11/395,438 US20070163643A1 (en) 2004-02-19 2006-03-30 High-throughput printing of chalcogen layer and the use of an inter-metallic material
PCT/US2007/062764 WO2007101136A2 (en) 2006-02-23 2007-02-23 High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material

Publications (2)

Publication Number Publication Date
JP2009528681A true JP2009528681A (ja) 2009-08-06
JP2009528681A5 JP2009528681A5 (enExample) 2010-04-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008556571A Pending JP2009528681A (ja) 2006-02-23 2007-02-23 カルコゲンと金属間物質の使用による高処理能力の半導体層形成

Country Status (3)

Country Link
EP (1) EP1998902A2 (enExample)
JP (1) JP2009528681A (enExample)
WO (1) WO2007101136A2 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011138837A (ja) * 2009-12-26 2011-07-14 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
JP2011176204A (ja) * 2010-02-25 2011-09-08 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
JP2012114250A (ja) * 2010-11-25 2012-06-14 Kyocera Corp 光電変換装置の製造方法
JP2013511601A (ja) * 2009-11-20 2013-04-04 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ポリイミドフィルムおよび電極を備えるアセンブリ、ならびにそれに関連する方法
JP2013216888A (ja) * 2012-04-03 2013-10-24 Delsolar Co Ltd インク組成物、カルコゲニド半導体膜、太陽電池装置及びその製造方法
JP2013251331A (ja) * 2012-05-30 2013-12-12 Fujifilm Corp 光電変換素子および光電変換素子の製造方法
JP2016527708A (ja) * 2013-08-01 2016-09-08 エルジー・ケム・リミテッド 太陽電池の光吸収層製造用金属カルコゲナイドナノ粒子及びその製造方法
JP2016528718A (ja) * 2013-08-01 2016-09-15 エルジー・ケム・リミテッド 太陽電池光吸収層製造用３層コア−シェルナノ粒子及びその製造方法
KR101689471B1 (ko) * 2015-06-15 2016-12-26 한양대학교 산학협력단 금속 칼코겐 화합물 박막 및 그 제조 방법
JP2020509583A (ja) * 2017-02-16 2020-03-26 ウェイク フォレスト ユニバーシティ 複合ナノ粒子組成物およびアセンブリ

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101144807B1 (ko) 2007-09-18 2012-05-11 엘지전자 주식회사 태양전지 박막조성용 잉크와 그 제조방법, 이를 이용한ｃｉｇｓ 박막형 태양전지, 및 그 제조 방법
CN101471394A (zh) * 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
JP5185171B2 (ja) * 2009-03-24 2013-04-17 本田技研工業株式会社 薄膜太陽電池の光吸収層の形成方法
JP5213777B2 (ja) * 2009-03-26 2013-06-19 京セラ株式会社 薄膜太陽電池の製法
KR101749137B1 (ko) * 2010-06-22 2017-06-21 영남대학교 산학협력단 태양광 전지용 나노결정질 구리 인듐 디셀레니드 (cis) 및 잉크-기반 합금 흡수재층
US8728855B2 (en) * 2012-09-28 2014-05-20 First Solar, Inc. Method of processing a semiconductor assembly
TWI449193B (zh) * 2012-12-21 2014-08-11 財團法人工業技術研究院 太陽電池吸收層之製備方法及其熱處理設備
US9196767B2 (en) 2013-07-18 2015-11-24 Nanoco Technologies Ltd. Preparation of copper selenide nanoparticles

Citations (4)

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JPH01160060A (ja) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd ２セレン化インジウム銅の製造方法
JPH06151930A (ja) * 1992-10-30 1994-05-31 Matsushita Electric Ind Co Ltd カルコパイライト型化合物薄膜の製造方法
JPH10135495A (ja) * 1996-10-25 1998-05-22 Showa Shell Sekiyu Kk 薄膜太陽電池の製造方法及び製造装置
JP2003273135A (ja) * 2002-03-18 2003-09-26 Matsushita Electric Ind Co Ltd 化合物半導体薄膜の製造方法

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* Cited by examiner, † Cited by third party
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WO2001037324A1 (en) * 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
US7842882B2 (en) * 2004-03-01 2010-11-30 Basol Bulent M Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01160060A (ja) * 1987-12-17 1989-06-22 Matsushita Electric Ind Co Ltd ２セレン化インジウム銅の製造方法
JPH06151930A (ja) * 1992-10-30 1994-05-31 Matsushita Electric Ind Co Ltd カルコパイライト型化合物薄膜の製造方法
JPH10135495A (ja) * 1996-10-25 1998-05-22 Showa Shell Sekiyu Kk 薄膜太陽電池の製造方法及び製造装置
JP2003273135A (ja) * 2002-03-18 2003-09-26 Matsushita Electric Ind Co Ltd 化合物半導体薄膜の製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013511601A (ja) * 2009-11-20 2013-04-04 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ポリイミドフィルムおよび電極を備えるアセンブリ、ならびにそれに関連する方法
JP2011138837A (ja) * 2009-12-26 2011-07-14 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
JP2011176204A (ja) * 2010-02-25 2011-09-08 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
JP2012114250A (ja) * 2010-11-25 2012-06-14 Kyocera Corp 光電変換装置の製造方法
JP2013216888A (ja) * 2012-04-03 2013-10-24 Delsolar Co Ltd インク組成物、カルコゲニド半導体膜、太陽電池装置及びその製造方法
JP2013251331A (ja) * 2012-05-30 2013-12-12 Fujifilm Corp 光電変換素子および光電変換素子の製造方法
JP2016527708A (ja) * 2013-08-01 2016-09-08 エルジー・ケム・リミテッド 太陽電池の光吸収層製造用金属カルコゲナイドナノ粒子及びその製造方法
JP2016528718A (ja) * 2013-08-01 2016-09-15 エルジー・ケム・リミテッド 太陽電池光吸収層製造用３層コア−シェルナノ粒子及びその製造方法
KR101689471B1 (ko) * 2015-06-15 2016-12-26 한양대학교 산학협력단 금속 칼코겐 화합물 박막 및 그 제조 방법
JP2020509583A (ja) * 2017-02-16 2020-03-26 ウェイク フォレスト ユニバーシティ 複合ナノ粒子組成物およびアセンブリ
JP7390001B2 (ja) 2017-02-16 2023-12-01 ウェイク フォレスト ユニバーシティ 複合ナノ粒子組成物およびアセンブリ

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Publication number Publication date
WO2007101136A2 (en) 2007-09-07
WO2007101136A3 (en) 2008-03-06
EP1998902A2 (en) 2008-12-10

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