JP2008235904A5 - - Google Patents
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- Publication number
- JP2008235904A5 JP2008235904A5 JP2008072450A JP2008072450A JP2008235904A5 JP 2008235904 A5 JP2008235904 A5 JP 2008235904A5 JP 2008072450 A JP2008072450 A JP 2008072450A JP 2008072450 A JP2008072450 A JP 2008072450A JP 2008235904 A5 JP2008235904 A5 JP 2008235904A5
- Authority
- JP
- Japan
- Prior art keywords
- chalcogen
- material layer
- phase change
- change material
- tellurium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 10
- 239000012782 phase change material Substances 0.000 claims 10
- 150000001786 chalcogen compounds Chemical class 0.000 claims 8
- 229910052798 chalcogen Inorganic materials 0.000 claims 7
- 150000001787 chalcogens Chemical class 0.000 claims 7
- 229910052714 tellurium Inorganic materials 0.000 claims 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 6
- 229910052787 antimony Inorganic materials 0.000 claims 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 229910052732 germanium Inorganic materials 0.000 claims 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 3
- 238000004544 sputter deposition Methods 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 2
- -1 25-35% germanium Chemical class 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910005900 GeTe Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070027395A KR100814393B1 (ko) | 2007-03-21 | 2007-03-21 | 상변화 물질층 형성 방법 및 이를 이용한 상변화 메모리장치의 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008235904A JP2008235904A (ja) | 2008-10-02 |
| JP2008235904A5 true JP2008235904A5 (enExample) | 2011-04-28 |
Family
ID=39410805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008072450A Pending JP2008235904A (ja) | 2007-03-21 | 2008-03-19 | 相変化物質層の形成方法及びこれを用いるメモリ装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8192592B2 (enExample) |
| JP (1) | JP2008235904A (enExample) |
| KR (1) | KR100814393B1 (enExample) |
| CN (1) | CN101271961B (enExample) |
| TW (1) | TW200849685A (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5116774B2 (ja) * | 2007-11-16 | 2013-01-09 | 株式会社アルバック | カルコゲナイド膜およびその製造方法 |
| US20110180905A1 (en) * | 2008-06-10 | 2011-07-28 | Advanced Technology Materials, Inc. | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY |
| US7785978B2 (en) * | 2009-02-04 | 2010-08-31 | Micron Technology, Inc. | Method of forming memory cell using gas cluster ion beams |
| KR20100099581A (ko) * | 2009-03-03 | 2010-09-13 | 삼성전자주식회사 | 상변화 물질막의 형성방법 |
| KR101653569B1 (ko) * | 2009-09-01 | 2016-09-02 | 삼성전자주식회사 | 상변화 물질을 포함하는 비휘발성 메모리 소자 |
| WO2011119175A1 (en) * | 2010-03-26 | 2011-09-29 | Advanced Technology Materials, Inc. | Germanium antimony telluride materials and devices incorporating same |
| WO2011146913A2 (en) | 2010-05-21 | 2011-11-24 | Advanced Technology Materials, Inc. | Germanium antimony telluride materials and devices incorporating same |
| KR101771084B1 (ko) * | 2010-10-11 | 2017-08-24 | 삼성전자 주식회사 | 상변화 물질을 포함하는 비휘발성 메모리 소자의 제조 방법 |
| CN102544361A (zh) * | 2010-12-31 | 2012-07-04 | 中国科学院上海微系统与信息技术研究所 | 可用于相变存储的相变材料及调节其相变参数的方法 |
| US8426242B2 (en) | 2011-02-01 | 2013-04-23 | Macronix International Co., Ltd. | Composite target sputtering for forming doped phase change materials |
| KR101952879B1 (ko) * | 2011-02-01 | 2019-02-28 | 매크로닉스 인터내셔널 컴퍼니 리미티드 | 도핑된 상 변화 재료를 형성하기 위한 복합 타겟의 스퍼터링 |
| CN102637820B (zh) * | 2011-02-09 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器的形成方法 |
| CN102751435A (zh) * | 2011-04-21 | 2012-10-24 | 中国科学院上海微系统与信息技术研究所 | 相变存储材料及其制备方法 |
| US8946666B2 (en) | 2011-06-23 | 2015-02-03 | Macronix International Co., Ltd. | Ge-Rich GST-212 phase change memory materials |
| CN102347446B (zh) * | 2011-10-27 | 2015-04-15 | 中国科学院上海微系统与信息技术研究所 | 一种用于相变存储器的Ge-Sb-Te富Ge掺N相变材料及其制备方法 |
| US8932901B2 (en) | 2011-10-31 | 2015-01-13 | Macronix International Co., Ltd. | Stressed phase change materials |
| WO2014070682A1 (en) | 2012-10-30 | 2014-05-08 | Advaned Technology Materials, Inc. | Double self-aligned phase change memory device structure |
| US9336879B2 (en) | 2014-01-24 | 2016-05-10 | Macronix International Co., Ltd. | Multiple phase change materials in an integrated circuit for system on a chip application |
| US10531174B2 (en) * | 2016-10-13 | 2020-01-07 | Bose Corporation | Earpiece employing cooling and sensation inducing materials |
| US10602250B2 (en) | 2016-10-13 | 2020-03-24 | Bose Corporation | Acoustaical devices employing phase change materials |
| US10777466B2 (en) * | 2017-11-28 | 2020-09-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor Fin cutting process and structures formed thereby |
| KR102452296B1 (ko) * | 2018-07-10 | 2022-10-06 | 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼 | 적층 구조체 및 그 제조 방법 그리고 반도체 디바이스 |
| KR102634805B1 (ko) * | 2018-08-23 | 2024-02-08 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
| JP2021134380A (ja) * | 2020-02-26 | 2021-09-13 | 三菱マテリアル株式会社 | スパッタリングターゲット |
| US11437568B2 (en) * | 2020-03-31 | 2022-09-06 | Globalfoundries U.S. Inc. | Memory device and methods of making such a memory device |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6033535A (en) * | 1990-08-28 | 2000-03-07 | Matsushita Electric Industrial Co., Ltd. | Optical information recording disk and method for manufacturing the same |
| US5714768A (en) * | 1995-10-24 | 1998-02-03 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
| US6632583B2 (en) * | 1999-12-07 | 2003-10-14 | Mitsubishi Chemical Corporation | Optical recording medium and production method of the same |
| KR100453540B1 (ko) | 2001-01-03 | 2004-10-22 | 내셔널 사이언스 카운실 | 재기록가능한 상변화형 광기록 조성물 및 재기록가능한상변화형 광디스크 |
| WO2003071531A1 (fr) * | 2002-02-25 | 2003-08-28 | Nikko Materials Company, Limited | Cible de pulverisation cathodique pour une memoire a changement de phase, film pour une memoire a changement de phase formee en utilisant cette cible et procede de production de cette cible |
| JP2004241535A (ja) * | 2003-02-05 | 2004-08-26 | Matsushita Electric Ind Co Ltd | 抵抗変化素子および製造方法 |
| US7115927B2 (en) | 2003-02-24 | 2006-10-03 | Samsung Electronics Co., Ltd. | Phase changeable memory devices |
| JP2004311729A (ja) | 2003-04-08 | 2004-11-04 | Mitsubishi Materials Corp | 電気抵抗が高い相変化記録膜 |
| CN100342562C (zh) * | 2003-11-26 | 2007-10-10 | 中国科学院上海微系统与信息技术研究所 | 一种相变薄膜材料纳米线的制备方法 |
| US7851691B2 (en) * | 2003-12-02 | 2010-12-14 | Battelle Memorial Institute | Thermoelectric devices and applications for the same |
| KR100533958B1 (ko) * | 2004-01-05 | 2005-12-06 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
| KR100623181B1 (ko) * | 2004-08-23 | 2006-09-19 | 삼성전자주식회사 | 상변화 메모리 장치 및 이의 제조 방법 |
| JP2006156886A (ja) * | 2004-12-01 | 2006-06-15 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
| KR100585175B1 (ko) * | 2005-01-31 | 2006-05-30 | 삼성전자주식회사 | 화학 기상 증착법에 의한 ＧｅＳｂＴｅ 박막의 제조방법 |
| KR100688532B1 (ko) * | 2005-02-14 | 2007-03-02 | 삼성전자주식회사 | 텔루르 전구체, 이를 이용하여 제조된 Ｔｅ-함유 칼코게나이드(ｃｈａｌｃｏｇｅｎｉｄｅ) 박막, 상기 박막의 제조방법 및 상변화 메모리 소자 |
| KR100682969B1 (ko) * | 2005-08-04 | 2007-02-15 | 삼성전자주식회사 | 상변화 물질, 이를 포함하는 상변화 램과 이의 제조 및 동작 방법 |
| KR20060076262A (ko) * | 2006-06-14 | 2006-07-04 | 삼성전자주식회사 | 상변화 메모리 제조 장치 및 이를 이용한 상변화 메모리장치 제조 방법 |
-
2007
- 2007-03-21 KR KR1020070027395A patent/KR100814393B1/ko active Active
-
2008
- 2008-03-19 US US12/051,043 patent/US8192592B2/en active Active
- 2008-03-19 JP JP2008072450A patent/JP2008235904A/ja active Pending
- 2008-03-21 TW TW097110242A patent/TW200849685A/zh unknown
- 2008-03-21 CN CN2008100830789A patent/CN101271961B/zh active Active
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