JP2008235904A - 相変化物質層の形成方法及びこれを用いるメモリ装置の製造方法 - Google Patents

相変化物質層の形成方法及びこれを用いるメモリ装置の製造方法 Download PDF

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Publication number
JP2008235904A
JP2008235904A JP2008072450A JP2008072450A JP2008235904A JP 2008235904 A JP2008235904 A JP 2008235904A JP 2008072450 A JP2008072450 A JP 2008072450A JP 2008072450 A JP2008072450 A JP 2008072450A JP 2008235904 A JP2008235904 A JP 2008235904A
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JP
Japan
Prior art keywords
phase change
tellurium
material layer
change material
chalcogen
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Pending
Application number
JP2008072450A
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English (en)
Japanese (ja)
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JP2008235904A5 (enExample
Inventor
Dokyo Kin
度亨 金
Shin-Jae Kang
信在 姜
In-Sun Park
仁善 朴
Hyun-Seok Lim
▲ヒュン▼錫 林
圭煥 ▲呉▼
Gyu-Hwan Oh
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2008235904A publication Critical patent/JP2008235904A/ja
Publication of JP2008235904A5 publication Critical patent/JP2008235904A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
JP2008072450A 2007-03-21 2008-03-19 相変化物質層の形成方法及びこれを用いるメモリ装置の製造方法 Pending JP2008235904A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070027395A KR100814393B1 (ko) 2007-03-21 2007-03-21 상변화 물질층 형성 방법 및 이를 이용한 상변화 메모리장치의 제조 방법

Publications (2)

Publication Number Publication Date
JP2008235904A true JP2008235904A (ja) 2008-10-02
JP2008235904A5 JP2008235904A5 (enExample) 2011-04-28

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JP2008072450A Pending JP2008235904A (ja) 2007-03-21 2008-03-19 相変化物質層の形成方法及びこれを用いるメモリ装置の製造方法

Country Status (5)

Country Link
US (1) US8192592B2 (enExample)
JP (1) JP2008235904A (enExample)
KR (1) KR100814393B1 (enExample)
CN (1) CN101271961B (enExample)
TW (1) TW200849685A (enExample)

Cited By (6)

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WO2009063950A1 (ja) * 2007-11-16 2009-05-22 Ulvac, Inc. カルコゲナイド膜およびその製造方法
JP2012517102A (ja) * 2009-02-04 2012-07-26 マイクロン テクノロジー， インク． ガスクラスターイオンビームを用いてメモリセルを形成する方法
KR20120089219A (ko) * 2011-02-01 2012-08-09 매크로닉스 인터내셔널 컴퍼니 리미티드 도핑된 상 변화 재료를 형성하기 위한 복합 타겟의 스퍼터링
JP2012160710A (ja) * 2011-02-01 2012-08-23 Macronix International Co Ltd ドープされた相変化材料を形成するための複合ターゲットのスパッタリング
CN109841619A (zh) * 2017-11-28 2019-06-04 台湾积体电路制造股份有限公司 半导体结构切割工艺和由此形成的结构
WO2021171748A1 (ja) * 2020-02-26 2021-09-02 三菱マテリアル株式会社 スパッタリングターゲット

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US20110180905A1 (en) * 2008-06-10 2011-07-28 Advanced Technology Materials, Inc. GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY
KR20100099581A (ko) * 2009-03-03 2010-09-13 삼성전자주식회사 상변화 물질막의 형성방법
KR101653569B1 (ko) * 2009-09-01 2016-09-02 삼성전자주식회사 상변화 물질을 포함하는 비휘발성 메모리 소자
KR101706809B1 (ko) * 2010-03-26 2017-02-15 엔테그리스, 아이엔씨. 게르마늄 안티몬 텔루라이드 물질 및 이를 포함하는 장치
US9190609B2 (en) 2010-05-21 2015-11-17 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
KR101771084B1 (ko) * 2010-10-11 2017-08-24 삼성전자 주식회사 상변화 물질을 포함하는 비휘발성 메모리 소자의 제조 방법
CN102544361A (zh) * 2010-12-31 2012-07-04 中国科学院上海微系统与信息技术研究所 可用于相变存储的相变材料及调节其相变参数的方法
CN102637820B (zh) * 2011-02-09 2014-06-04 中芯国际集成电路制造(上海)有限公司 相变存储器的形成方法
CN102751435A (zh) * 2011-04-21 2012-10-24 中国科学院上海微系统与信息技术研究所 相变存储材料及其制备方法
US8946666B2 (en) 2011-06-23 2015-02-03 Macronix International Co., Ltd. Ge-Rich GST-212 phase change memory materials
CN102347446B (zh) * 2011-10-27 2015-04-15 中国科学院上海微系统与信息技术研究所 一种用于相变存储器的Ge-Sb-Te富Ge掺N相变材料及其制备方法
US8932901B2 (en) 2011-10-31 2015-01-13 Macronix International Co., Ltd. Stressed phase change materials
WO2014070682A1 (en) 2012-10-30 2014-05-08 Advaned Technology Materials, Inc. Double self-aligned phase change memory device structure
US9336879B2 (en) 2014-01-24 2016-05-10 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US10602250B2 (en) 2016-10-13 2020-03-24 Bose Corporation Acoustaical devices employing phase change materials
US10531174B2 (en) * 2016-10-13 2020-01-07 Bose Corporation Earpiece employing cooling and sensation inducing materials
KR102452296B1 (ko) * 2018-07-10 2022-10-06 고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼 적층 구조체 및 그 제조 방법 그리고 반도체 디바이스
KR102634805B1 (ko) * 2018-08-23 2024-02-08 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US11437568B2 (en) * 2020-03-31 2022-09-06 Globalfoundries U.S. Inc. Memory device and methods of making such a memory device

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JP2007043176A (ja) * 2005-08-04 2007-02-15 Samsung Electronics Co Ltd 相変化物質、それを含む相変化ｒａｍ並びに、その製造及び動作方法

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JP2004241535A (ja) * 2003-02-05 2004-08-26 Matsushita Electric Ind Co Ltd 抵抗変化素子および製造方法
JP2006156886A (ja) * 2004-12-01 2006-06-15 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP2007043176A (ja) * 2005-08-04 2007-02-15 Samsung Electronics Co Ltd 相変化物質、それを含む相変化ｒａｍ並びに、その製造及び動作方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009063950A1 (ja) * 2007-11-16 2009-05-22 Ulvac, Inc. カルコゲナイド膜およびその製造方法
JP2012517102A (ja) * 2009-02-04 2012-07-26 マイクロン テクノロジー， インク． ガスクラスターイオンビームを用いてメモリセルを形成する方法
US8614499B2 (en) 2009-02-04 2013-12-24 Micron Technology, Inc. Memory cell having heater material and variable resistance material embedded within insulating material
KR20120089219A (ko) * 2011-02-01 2012-08-09 매크로닉스 인터내셔널 컴퍼니 리미티드 도핑된 상 변화 재료를 형성하기 위한 복합 타겟의 스퍼터링
JP2012160710A (ja) * 2011-02-01 2012-08-23 Macronix International Co Ltd ドープされた相変化材料を形成するための複合ターゲットのスパッタリング
KR101952879B1 (ko) * 2011-02-01 2019-02-28 매크로닉스 인터내셔널 컴퍼니 리미티드 도핑된 상 변화 재료를 형성하기 위한 복합 타겟의 스퍼터링
CN109841619A (zh) * 2017-11-28 2019-06-04 台湾积体电路制造股份有限公司 半导体结构切割工艺和由此形成的结构
CN109841619B (zh) * 2017-11-28 2024-01-12 台湾积体电路制造股份有限公司 半导体结构切割工艺和由此形成的结构
WO2021171748A1 (ja) * 2020-02-26 2021-09-02 三菱マテリアル株式会社 スパッタリングターゲット

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US8192592B2 (en) 2012-06-05
TW200849685A (en) 2008-12-16

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