JPH11514150A - 論理装置上の第2層位相変化メモリアレイ - Google Patents
論理装置上の第2層位相変化メモリアレイInfo
- Publication number
- JPH11514150A JPH11514150A JP9516747A JP51674797A JPH11514150A JP H11514150 A JPH11514150 A JP H11514150A JP 9516747 A JP9516747 A JP 9516747A JP 51674797 A JP51674797 A JP 51674797A JP H11514150 A JPH11514150 A JP H11514150A
- Authority
- JP
- Japan
- Prior art keywords
- memory
- logic
- computing unit
- unit according
- twenty
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims abstract description 212
- 230000008859 change Effects 0.000 title abstract description 13
- 238000012545 processing Methods 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims description 88
- 150000004770 chalcogenides Chemical group 0.000 claims description 36
- 239000000203 mixture Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052787 antimony Inorganic materials 0.000 claims description 10
- 238000004364 calculation method Methods 0.000 claims description 9
- 238000003860 storage Methods 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 2
- 239000012620 biological material Substances 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 61
- 239000010409 thin film Substances 0.000 description 23
- 239000011148 porous material Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 238000003466 welding Methods 0.000 description 11
- 101100427537 Arabidopsis thaliana ULP1C gene Proteins 0.000 description 8
- 230000007704 transition Effects 0.000 description 7
- 238000003491 array Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 239000000470 constituent Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 229910052723 transition metal Inorganic materials 0.000 description 6
- 150000003624 transition metals Chemical class 0.000 description 6
- 101100427538 Arabidopsis thaliana ULP1D gene Proteins 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- CYKMNKXPYXUVPR-UHFFFAOYSA-N [C].[Ti] Chemical compound [C].[Ti] CYKMNKXPYXUVPR-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000007726 management method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910005936 Ge—Sb Inorganic materials 0.000 description 3
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 241001279686 Allium moly Species 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 229910001245 Sb alloy Inorganic materials 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000005055 memory storage Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 230000035045 associative learning Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/856—Thermoelectric active materials comprising organic compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/10—Phase change RAM [PCRAM, PRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.論理処理装置と、 前記論理処理装置上に溶着され、前記論理処理装置と通信可能なメモリアレイ とからなる計算ユニット。 2.前記メモリアレイが半導体材料を含むことを特徴とする請求項1に記載の 計算ユニット。 3.前記メモリアレイが有機材料を含むことを特徴とする請求項1に記載の計 算ユニット。 4.前記メモリアレイが生物学的材料を含むことを特徴とする請求項1に記載 の計算ユニット。 5.前記メモリアレイは、 電気的に駆動され、直接重ね書き可能な複数のマルチビット単一セルメモリ素 子であって、前記論理処理装置上で行及び列の形で離間配列されるマルチビット 単一セルメモリ素子と、 単一のセルメモリ素子を規定するメモリ材料で構成されるメモリ素子であって 、このメモリ材料が(1)電気抵抗値の大きなダイナミックレンジ、(2)前記 単一セルに対しマルチビット記憶能力を与えるように選択された電気入力信号に 対応して前記ダイナミックレンジ内で複数の抵抗値の一つに設定可能であること 、(3)前記単一セルメモリの少なくともフィラメント部分が、前記メモリ材料 の前記抵抗値に拘わらず、前記選択された電気信号によって前記ダイナミックレ ンジのいかなる抵抗値にも設定可能であることによって特徴づけられるメモ リ素子と、 前記ダイナミックレンジ内で選択された抵抗値に前記メモリ材料を設定するよ うに電気入力信号を供給するために間隔を置いて配置された一対のコンタクトと から構成されることを特徴とする請求項1記載の計算ユニット。 6.前記メモリ材料がSe,Te,Ge,Sb及びその混合物、あるいはその 合金を含むことを特徴とする請求項5記載のメモリ素子。 7.前記メモリ材料は、下付き表示が原子%であり、構成元素が合計100% 、40≦ a ≦ 58及び8≦ b ≦ 40であるとして、Te,Ge及びSbを TeaGebSb100-(a+b)の比率で含むことを特徴とする請求項6記載のメモリ 素子。 8.前記論理処理ユニットが集積回路であることを特徴とする請求項1に記載 の計算ユニット。 9.前記論理処理ユニットが論理ユニット及び装置ドライバを含むことを特徴 とする請求項8記載の計算ユニット。 10.前記論理処理ユニットが半導体材料を含むことを特徴とする請求項9に 記載の計算ユニット。 11.前記半導体材料がシリコンであることを特徴とする請求項10に記載の 計算ユニット。 12.前記論理処理ユニットが、論理ゲートとして複数の2端子カルコゲニド スイッチを採用する論理ファミ リーを含むことを特徴とする請求項1記載の計算ユニット。 13.前記2端子カルコゲニドスイッチがカルコゲニドしきい値スイッチであ ることを特徴とする請求項12記載の計算ユニット。 14.前記論理ファミリーが多相クロッキングを使用することを特徴とする請 求項12記載の計算ユニット。 15.前記論理ファミリーが3相クロッキングを使用することを特徴とする請 求項14記載の計算ユニット。 16.前記論理ファミリーが4相クロッキングを使用することを特徴とする請 求項14記載の計算ユニット。 17.前記4相クロッキングが50%デューティサイクルを持つことを特徴と する請求項16記載の計算ユニット。 18.前記論理ファミリーは論理動作回路を含んでおり、この論理動作回路は 、 第2カルコゲニドしきい値スイッチに直列に接続される第1カルコゲニドしき い値スイッチと、 複数の入力抵抗の1つの端子が直列接続された前記しきい値スイッチ間の一点 に接続され、前記複数の入力抵抗うちの一つの抵抗の他端子にそれぞれ接続され る複数の入力点と、 前記第1及び第2しきい値スイッチの接続点に対向する第1しきい値スイッチ の端子に接続される回路パワリングポイントと、 前記第1及び第2しきい値スイッチの接続点に対向する第2しきい値スイッチ の端子にその一端子が接続され、他端子が接地される接地抵抗と、 前記第2しきい値スイッチ及び前記接地抵抗の間に接続される信号出力端子と を含むことを特徴とする請求項12記載の計算ユニット。 19.前記複数の入力点が一入力点であることを特徴とする請求項18記載の 計算ユニット。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/547,349 US5714768A (en) | 1995-10-24 | 1995-10-24 | Second-layer phase change memory array on top of a logic device |
US08/547,349 | 1995-10-24 | ||
PCT/US1996/016994 WO1997015954A1 (en) | 1995-10-24 | 1996-10-22 | Second-layer phase change memory array on top of a logic device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11514150A true JPH11514150A (ja) | 1999-11-30 |
JP4303317B2 JP4303317B2 (ja) | 2009-07-29 |
Family
ID=24184301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51674797A Expired - Lifetime JP4303317B2 (ja) | 1995-10-24 | 1996-10-22 | 計算ユニット |
Country Status (8)
Country | Link |
---|---|
US (1) | US5714768A (ja) |
EP (2) | EP1326158B1 (ja) |
JP (1) | JP4303317B2 (ja) |
KR (2) | KR100474530B1 (ja) |
AU (1) | AU7519696A (ja) |
CA (1) | CA2231377C (ja) |
DE (3) | DE888618T1 (ja) |
WO (1) | WO1997015954A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005012186A (ja) * | 2003-06-18 | 2005-01-13 | Macronix Internatl Co Ltd | マルチレベルメモリ素子およびこれをプログラムし読出す方法 |
JP2005012183A (ja) * | 2003-06-18 | 2005-01-13 | Macronix Internatl Co Ltd | メモリセルのしきい値電圧を調節する方法 |
WO2005076355A1 (ja) * | 2004-02-06 | 2005-08-18 | Renesas Technology Corp. | 記憶装置 |
JP2005317787A (ja) * | 2004-04-28 | 2005-11-10 | Matsushita Electric Ind Co Ltd | スイッチング素子およびそれを用いたアレイ型機能素子 |
JP2007512691A (ja) * | 2003-11-28 | 2007-05-17 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | 半導体集積メモリーおよび半導体集積メモリーの製造方法 |
JP2008235904A (ja) * | 2007-03-21 | 2008-10-02 | Samsung Electronics Co Ltd | 相変化物質層の形成方法及びこれを用いるメモリ装置の製造方法 |
JP2009530817A (ja) * | 2006-03-17 | 2009-08-27 | マイクロン テクノロジー, インク. | 低消費電力相変化メモリとその形成方法 |
US7638786B2 (en) | 2004-11-15 | 2009-12-29 | Renesas Technology Corp. | Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surface |
US7750334B2 (en) | 2003-04-03 | 2010-07-06 | Kabushiki Kaisha Toshiba | Phase change memory device |
JP2011243980A (ja) * | 2010-05-11 | 2011-12-01 | Micron Technology Inc | カルコゲニド含有デバイス用電極の形成方法 |
Families Citing this family (183)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6420725B1 (en) * | 1995-06-07 | 2002-07-16 | Micron Technology, Inc. | Method and apparatus for forming an integrated circuit electrode having a reduced contact area |
US5831276A (en) | 1995-06-07 | 1998-11-03 | Micron Technology, Inc. | Three-dimensional container diode for use with multi-state material in a non-volatile memory cell |
US5879955A (en) * | 1995-06-07 | 1999-03-09 | Micron Technology, Inc. | Method for fabricating an array of ultra-small pores for chalcogenide memory cells |
US6653733B1 (en) | 1996-02-23 | 2003-11-25 | Micron Technology, Inc. | Conductors in semiconductor devices |
AU2136197A (en) * | 1996-03-01 | 1997-09-16 | Micron Technology, Inc. | Novel vertical diode structures with low series resistance |
US6750091B1 (en) | 1996-03-01 | 2004-06-15 | Micron Technology | Diode formation method |
US5687112A (en) * | 1996-04-19 | 1997-11-11 | Energy Conversion Devices, Inc. | Multibit single cell memory element having tapered contact |
US6025220A (en) | 1996-06-18 | 2000-02-15 | Micron Technology, Inc. | Method of forming a polysilicon diode and devices incorporating such diode |
US6337266B1 (en) | 1996-07-22 | 2002-01-08 | Micron Technology, Inc. | Small electrode for chalcogenide memories |
US5998244A (en) * | 1996-08-22 | 1999-12-07 | Micron Technology, Inc. | Memory cell incorporating a chalcogenide element and method of making same |
US7935951B2 (en) * | 1996-10-28 | 2011-05-03 | Ovonyx, Inc. | Composite chalcogenide materials and devices |
US6015977A (en) | 1997-01-28 | 2000-01-18 | Micron Technology, Inc. | Integrated circuit memory cell having a small active area and method of forming same |
US5952671A (en) * | 1997-05-09 | 1999-09-14 | Micron Technology, Inc. | Small electrode for a chalcogenide switching device and method for fabricating same |
US6087689A (en) | 1997-06-16 | 2000-07-11 | Micron Technology, Inc. | Memory cell having a reduced active area and a memory array incorporating the same |
US6969866B1 (en) * | 1997-10-01 | 2005-11-29 | Ovonyx, Inc. | Electrically programmable memory element with improved contacts |
NO308149B1 (no) * | 1998-06-02 | 2000-07-31 | Thin Film Electronics Asa | Skalerbar, integrert databehandlingsinnretning |
RU2201639C1 (ru) * | 1998-12-04 | 2003-03-27 | Тин Филм Электроникс Аса | Масштабируемое устройство обработки данных |
US7260051B1 (en) * | 1998-12-18 | 2007-08-21 | Nanochip, Inc. | Molecular memory medium and molecular memory integrated circuit |
CN1210819C (zh) * | 1999-03-25 | 2005-07-13 | 能源变换设备有限公司 | 带有改进的接触点的电可编程存储器元件 |
US6563156B2 (en) * | 2001-03-15 | 2003-05-13 | Micron Technology, Inc. | Memory elements and methods for making same |
US6440837B1 (en) | 2000-07-14 | 2002-08-27 | Micron Technology, Inc. | Method of forming a contact structure in a semiconductor device |
WO2002009206A1 (en) * | 2000-07-22 | 2002-01-31 | Ovonyx, Inc. | Electrically programmable memory element |
DE60131036T2 (de) * | 2000-11-01 | 2008-02-14 | Japan Science And Technology Agency, Kawaguchi | Ein NOT-Schaltkreis |
US6569705B2 (en) * | 2000-12-21 | 2003-05-27 | Intel Corporation | Metal structure for a phase-change memory device |
US6638820B2 (en) * | 2001-02-08 | 2003-10-28 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices |
JP4742429B2 (ja) * | 2001-02-19 | 2011-08-10 | 住友電気工業株式会社 | ガラス微粒子堆積体の製造方法 |
US6900468B2 (en) * | 2001-02-20 | 2005-05-31 | Hewlett-Packard Development Company, L.P. | Indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide phase-change media for ultra-high-density data-storage devices |
US6727192B2 (en) | 2001-03-01 | 2004-04-27 | Micron Technology, Inc. | Methods of metal doping a chalcogenide material |
US6734455B2 (en) * | 2001-03-15 | 2004-05-11 | Micron Technology, Inc. | Agglomeration elimination for metal sputter deposition of chalcogenides |
US20020138301A1 (en) * | 2001-03-22 | 2002-09-26 | Thanos Karras | Integration of a portal into an application service provider data archive and/or web based viewer |
US7102150B2 (en) * | 2001-05-11 | 2006-09-05 | Harshfield Steven T | PCRAM memory cell and method of making same |
US6951805B2 (en) | 2001-08-01 | 2005-10-04 | Micron Technology, Inc. | Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry |
US6566284B2 (en) * | 2001-08-07 | 2003-05-20 | Hrl Laboratories, Llc | Method of manufacture for 80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio and resonant tunneling diode therefrom |
US6737312B2 (en) | 2001-08-27 | 2004-05-18 | Micron Technology, Inc. | Method of fabricating dual PCRAM cells sharing a common electrode |
US6881623B2 (en) * | 2001-08-29 | 2005-04-19 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device |
US6784018B2 (en) * | 2001-08-29 | 2004-08-31 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
US6955940B2 (en) * | 2001-08-29 | 2005-10-18 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices |
US20030047765A1 (en) * | 2001-08-30 | 2003-03-13 | Campbell Kristy A. | Stoichiometry for chalcogenide glasses useful for memory devices and method of formation |
US6709958B2 (en) * | 2001-08-30 | 2004-03-23 | Micron Technology, Inc. | Integrated circuit device and fabrication using metal-doped chalcogenide materials |
US6507061B1 (en) * | 2001-08-31 | 2003-01-14 | Intel Corporation | Multiple layer phase-change memory |
US6779050B2 (en) * | 2001-09-24 | 2004-08-17 | Broadcom Corporation | System and method for hardware based reassembly of a fragmented packet |
US6815818B2 (en) * | 2001-11-19 | 2004-11-09 | Micron Technology, Inc. | Electrode structure for use in an integrated circuit |
US6791859B2 (en) * | 2001-11-20 | 2004-09-14 | Micron Technology, Inc. | Complementary bit PCRAM sense amplifier and method of operation |
US6545903B1 (en) | 2001-12-17 | 2003-04-08 | Texas Instruments Incorporated | Self-aligned resistive plugs for forming memory cell with phase change material |
US6873538B2 (en) * | 2001-12-20 | 2005-03-29 | Micron Technology, Inc. | Programmable conductor random access memory and a method for writing thereto |
US6909656B2 (en) | 2002-01-04 | 2005-06-21 | Micron Technology, Inc. | PCRAM rewrite prevention |
EP1331675B1 (en) * | 2002-01-17 | 2007-05-23 | STMicroelectronics S.r.l. | Integrated resistive element, phase-change memory element including said resistive element, and method of manufacture thereof |
US20030143782A1 (en) * | 2002-01-31 | 2003-07-31 | Gilton Terry L. | Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures |
US6867064B2 (en) * | 2002-02-15 | 2005-03-15 | Micron Technology, Inc. | Method to alter chalcogenide glass for improved switching characteristics |
US6791885B2 (en) * | 2002-02-19 | 2004-09-14 | Micron Technology, Inc. | Programmable conductor random access memory and method for sensing same |
US6891749B2 (en) * | 2002-02-20 | 2005-05-10 | Micron Technology, Inc. | Resistance variable ‘on ’ memory |
US7087919B2 (en) * | 2002-02-20 | 2006-08-08 | Micron Technology, Inc. | Layered resistance variable memory device and method of fabrication |
US7151273B2 (en) * | 2002-02-20 | 2006-12-19 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
US6809362B2 (en) * | 2002-02-20 | 2004-10-26 | Micron Technology, Inc. | Multiple data state memory cell |
US6937528B2 (en) * | 2002-03-05 | 2005-08-30 | Micron Technology, Inc. | Variable resistance memory and method for sensing same |
US6849868B2 (en) * | 2002-03-14 | 2005-02-01 | Micron Technology, Inc. | Methods and apparatus for resistance variable material cells |
US6864500B2 (en) | 2002-04-10 | 2005-03-08 | Micron Technology, Inc. | Programmable conductor memory cell structure |
US6858482B2 (en) * | 2002-04-10 | 2005-02-22 | Micron Technology, Inc. | Method of manufacture of programmable switching circuits and memory cells employing a glass layer |
US6855975B2 (en) * | 2002-04-10 | 2005-02-15 | Micron Technology, Inc. | Thin film diode integrated with chalcogenide memory cell |
US6890790B2 (en) * | 2002-06-06 | 2005-05-10 | Micron Technology, Inc. | Co-sputter deposition of metal-doped chalcogenides |
US6825135B2 (en) * | 2002-06-06 | 2004-11-30 | Micron Technology, Inc. | Elimination of dendrite formation during metal/chalcogenide glass deposition |
US6707087B2 (en) | 2002-06-21 | 2004-03-16 | Hewlett-Packard Development Company, L.P. | Structure of chalcogenide memory element |
JP4027282B2 (ja) * | 2002-07-10 | 2007-12-26 | キヤノン株式会社 | インクジェット記録ヘッド |
US7015494B2 (en) * | 2002-07-10 | 2006-03-21 | Micron Technology, Inc. | Assemblies displaying differential negative resistance |
US7209378B2 (en) * | 2002-08-08 | 2007-04-24 | Micron Technology, Inc. | Columnar 1T-N memory cell structure |
DE10236439B3 (de) * | 2002-08-08 | 2004-02-26 | Infineon Technologies Ag | Speicher-Anordnung, Verfahren zum Betreiben einer Speicher-Anordnung und Verfahren zum Herstellen einer Speicher-Anordnung |
US7018863B2 (en) * | 2002-08-22 | 2006-03-28 | Micron Technology, Inc. | Method of manufacture of a resistance variable memory cell |
US6864521B2 (en) * | 2002-08-29 | 2005-03-08 | Micron Technology, Inc. | Method to control silver concentration in a resistance variable memory element |
US7294527B2 (en) | 2002-08-29 | 2007-11-13 | Micron Technology Inc. | Method of forming a memory cell |
US7163837B2 (en) | 2002-08-29 | 2007-01-16 | Micron Technology, Inc. | Method of forming a resistance variable memory element |
US6867996B2 (en) | 2002-08-29 | 2005-03-15 | Micron Technology, Inc. | Single-polarity programmable resistance-variable memory element |
US6856002B2 (en) * | 2002-08-29 | 2005-02-15 | Micron Technology, Inc. | Graded GexSe100-x concentration in PCRAM |
US7010644B2 (en) * | 2002-08-29 | 2006-03-07 | Micron Technology, Inc. | Software refreshed memory device and method |
US7364644B2 (en) * | 2002-08-29 | 2008-04-29 | Micron Technology, Inc. | Silver selenide film stoichiometry and morphology control in sputter deposition |
US6867114B2 (en) | 2002-08-29 | 2005-03-15 | Micron Technology Inc. | Methods to form a memory cell with metal-rich metal chalcogenide |
US20040040837A1 (en) * | 2002-08-29 | 2004-03-04 | Mcteer Allen | Method of forming chalcogenide sputter target |
US6831019B1 (en) * | 2002-08-29 | 2004-12-14 | Micron Technology, Inc. | Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes |
JP3978541B2 (ja) * | 2002-09-25 | 2007-09-19 | 現代自動車株式会社 | エンジンのシリンダヘッドカバー及びその組立方法 |
US6985377B2 (en) * | 2002-10-15 | 2006-01-10 | Nanochip, Inc. | Phase change media for high density data storage |
US7233517B2 (en) * | 2002-10-15 | 2007-06-19 | Nanochip, Inc. | Atomic probes and media for high density data storage |
AU2003282323A1 (en) * | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Electric device comprising phase change material |
US7402851B2 (en) * | 2003-02-24 | 2008-07-22 | Samsung Electronics Co., Ltd. | Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same |
US7425735B2 (en) * | 2003-02-24 | 2008-09-16 | Samsung Electronics Co., Ltd. | Multi-layer phase-changeable memory devices |
US7115927B2 (en) * | 2003-02-24 | 2006-10-03 | Samsung Electronics Co., Ltd. | Phase changeable memory devices |
KR100543445B1 (ko) | 2003-03-04 | 2006-01-23 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성방법 |
US7085155B2 (en) * | 2003-03-10 | 2006-08-01 | Energy Conversion Devices, Inc. | Secured phase-change devices |
US6813178B2 (en) | 2003-03-12 | 2004-11-02 | Micron Technology, Inc. | Chalcogenide glass constant current device, and its method of fabrication and operation |
US7022579B2 (en) * | 2003-03-14 | 2006-04-04 | Micron Technology, Inc. | Method for filling via with metal |
US7459715B2 (en) * | 2003-04-03 | 2008-12-02 | Kabushiki Kaisha Toshiba | Resistance change memory device |
US7729158B2 (en) * | 2003-04-03 | 2010-06-01 | Kabushiki Kaisha Toshiba | Resistance change memory device |
US7050327B2 (en) | 2003-04-10 | 2006-05-23 | Micron Technology, Inc. | Differential negative resistance memory |
US7499315B2 (en) * | 2003-06-11 | 2009-03-03 | Ovonyx, Inc. | Programmable matrix array with chalcogenide material |
US6930909B2 (en) * | 2003-06-25 | 2005-08-16 | Micron Technology, Inc. | Memory device and methods of controlling resistance variation and resistance profile drift |
US6961277B2 (en) | 2003-07-08 | 2005-11-01 | Micron Technology, Inc. | Method of refreshing a PCRAM memory device |
US7061004B2 (en) * | 2003-07-21 | 2006-06-13 | Micron Technology, Inc. | Resistance variable memory elements and methods of formation |
US6914255B2 (en) | 2003-08-04 | 2005-07-05 | Ovonyx, Inc. | Phase change access device for memories |
US6903361B2 (en) * | 2003-09-17 | 2005-06-07 | Micron Technology, Inc. | Non-volatile memory structure |
US7153721B2 (en) * | 2004-01-28 | 2006-12-26 | Micron Technology, Inc. | Resistance variable memory elements based on polarized silver-selenide network growth |
US7105864B2 (en) * | 2004-01-29 | 2006-09-12 | Micron Technology, Inc. | Non-volatile zero field splitting resonance memory |
US7583551B2 (en) | 2004-03-10 | 2009-09-01 | Micron Technology, Inc. | Power management control and controlling memory refresh operations |
US7098068B2 (en) * | 2004-03-10 | 2006-08-29 | Micron Technology, Inc. | Method of forming a chalcogenide material containing device |
US7301887B2 (en) * | 2004-04-16 | 2007-11-27 | Nanochip, Inc. | Methods for erasing bit cells in a high density data storage device |
US7379412B2 (en) | 2004-04-16 | 2008-05-27 | Nanochip, Inc. | Methods for writing and reading highly resolved domains for high density data storage |
US20050243660A1 (en) * | 2004-04-16 | 2005-11-03 | Rust Thomas F | Methods for erasing bit cells in a high density data storage device |
US20050232061A1 (en) | 2004-04-16 | 2005-10-20 | Rust Thomas F | Systems for writing and reading highly resolved domains for high density data storage |
US20050243592A1 (en) * | 2004-04-16 | 2005-11-03 | Rust Thomas F | High density data storage device having eraseable bit cells |
WO2005112118A1 (ja) * | 2004-05-14 | 2005-11-24 | Renesas Technology Corp. | 半導体記憶装置 |
KR100672936B1 (ko) * | 2004-07-01 | 2007-01-24 | 삼성전자주식회사 | 상변환 기억소자 및 그 제조방법 |
US7326950B2 (en) * | 2004-07-19 | 2008-02-05 | Micron Technology, Inc. | Memory device with switching glass layer |
US7190048B2 (en) * | 2004-07-19 | 2007-03-13 | Micron Technology, Inc. | Resistance variable memory device and method of fabrication |
US7354793B2 (en) * | 2004-08-12 | 2008-04-08 | Micron Technology, Inc. | Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element |
US7365411B2 (en) | 2004-08-12 | 2008-04-29 | Micron Technology, Inc. | Resistance variable memory with temperature tolerant materials |
US7151688B2 (en) * | 2004-09-01 | 2006-12-19 | Micron Technology, Inc. | Sensing of resistance variable memory devices |
US7590918B2 (en) * | 2004-09-10 | 2009-09-15 | Ovonyx, Inc. | Using a phase change memory as a high volume memory |
US20060056233A1 (en) * | 2004-09-10 | 2006-03-16 | Parkinson Ward D | Using a phase change memory as a replacement for a buffered flash memory |
US20060131555A1 (en) * | 2004-12-22 | 2006-06-22 | Micron Technology, Inc. | Resistance variable devices with controllable channels |
US7374174B2 (en) * | 2004-12-22 | 2008-05-20 | Micron Technology, Inc. | Small electrode for resistance variable devices |
US20060172067A1 (en) * | 2005-01-28 | 2006-08-03 | Energy Conversion Devices, Inc | Chemical vapor deposition of chalcogenide materials |
US7317200B2 (en) | 2005-02-23 | 2008-01-08 | Micron Technology, Inc. | SnSe-based limited reprogrammable cell |
US8193606B2 (en) * | 2005-02-28 | 2012-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including a memory element |
US7269044B2 (en) | 2005-04-22 | 2007-09-11 | Micron Technology, Inc. | Method and apparatus for accessing a memory array |
US7709289B2 (en) | 2005-04-22 | 2010-05-04 | Micron Technology, Inc. | Memory elements having patterned electrodes and method of forming the same |
US7427770B2 (en) | 2005-04-22 | 2008-09-23 | Micron Technology, Inc. | Memory array for increased bit density |
US7269079B2 (en) * | 2005-05-16 | 2007-09-11 | Micron Technology, Inc. | Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory |
US7367119B2 (en) * | 2005-06-24 | 2008-05-06 | Nanochip, Inc. | Method for forming a reinforced tip for a probe storage device |
US20060291271A1 (en) * | 2005-06-24 | 2006-12-28 | Nanochip, Inc. | High density data storage devices having servo indicia formed in a patterned media |
US7463573B2 (en) * | 2005-06-24 | 2008-12-09 | Nanochip, Inc. | Patterned media for a high density data storage device |
US20070008867A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | High density data storage devices with a lubricant layer comprised of a field of polymer chains |
US7233520B2 (en) * | 2005-07-08 | 2007-06-19 | Micron Technology, Inc. | Process for erasing chalcogenide variable resistance memory bits |
US20070008865A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | High density data storage devices with polarity-dependent memory switching media |
US20070008866A1 (en) * | 2005-07-08 | 2007-01-11 | Nanochip, Inc. | Methods for writing and reading in a polarity-dependent memory switch media |
US7309630B2 (en) * | 2005-07-08 | 2007-12-18 | Nanochip, Inc. | Method for forming patterned media for a high density data storage device |
US7274034B2 (en) | 2005-08-01 | 2007-09-25 | Micron Technology, Inc. | Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication |
US7332735B2 (en) * | 2005-08-02 | 2008-02-19 | Micron Technology, Inc. | Phase change memory cell and method of formation |
US7317567B2 (en) * | 2005-08-02 | 2008-01-08 | Micron Technology, Inc. | Method and apparatus for providing color changing thin film material |
US20070037316A1 (en) * | 2005-08-09 | 2007-02-15 | Micron Technology, Inc. | Memory cell contact using spacers |
US7579615B2 (en) * | 2005-08-09 | 2009-08-25 | Micron Technology, Inc. | Access transistor for memory device |
US7304368B2 (en) * | 2005-08-11 | 2007-12-04 | Micron Technology, Inc. | Chalcogenide-based electrokinetic memory element and method of forming the same |
US7251154B2 (en) * | 2005-08-15 | 2007-07-31 | Micron Technology, Inc. | Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance |
US7277313B2 (en) * | 2005-08-31 | 2007-10-02 | Micron Technology, Inc. | Resistance variable memory element with threshold device and method of forming the same |
KR100723569B1 (ko) | 2005-09-30 | 2007-05-31 | 가부시끼가이샤 도시바 | 상 변화 메모리 장치 |
US8188454B2 (en) * | 2005-10-28 | 2012-05-29 | Ovonyx, Inc. | Forming a phase change memory with an ovonic threshold switch |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US8647484B2 (en) * | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
GB2433647B (en) | 2005-12-20 | 2008-05-28 | Univ Southampton | Phase change memory materials, devices and methods |
TWI470628B (zh) * | 2005-12-24 | 2015-01-21 | Ovonyx Inc | 具硫屬化物材料之可程式化矩陣陣列 |
KR100782482B1 (ko) * | 2006-05-19 | 2007-12-05 | 삼성전자주식회사 | GeBiTe막을 상변화 물질막으로 채택하는 상변화 기억 셀, 이를 구비하는 상변화 기억소자, 이를 구비하는 전자 장치 및 그 제조방법 |
US20080001075A1 (en) * | 2006-06-15 | 2008-01-03 | Nanochip, Inc. | Memory stage for a probe storage device |
US7560723B2 (en) * | 2006-08-29 | 2009-07-14 | Micron Technology, Inc. | Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication |
US7511984B2 (en) | 2006-08-30 | 2009-03-31 | Micron Technology, Inc. | Phase change memory |
KR100810615B1 (ko) * | 2006-09-20 | 2008-03-06 | 삼성전자주식회사 | 고온 상전이 패턴을 구비한 상전이 메모리소자 및 그제조방법 |
KR100807230B1 (ko) * | 2006-09-27 | 2008-02-28 | 삼성전자주식회사 | 상변화 물질층 및 이를 포함하는 상변화 메모리 장치 |
US7895560B2 (en) * | 2006-10-02 | 2011-02-22 | William Stuart Lovell | Continuous flow instant logic binary circuitry actively structured by code-generated pass transistor interconnects |
US20080174918A1 (en) * | 2007-01-19 | 2008-07-24 | Nanochip, Inc. | Method and system for writing and reading a charge-trap media with a probe tip |
US20080175033A1 (en) * | 2007-01-19 | 2008-07-24 | Nanochip, Inc. | Method and system for improving domain stability in a ferroelectric media |
US7969769B2 (en) * | 2007-03-15 | 2011-06-28 | Ovonyx, Inc. | Multi-terminal chalcogenide logic circuits |
US20080233672A1 (en) * | 2007-03-20 | 2008-09-25 | Nanochip, Inc. | Method of integrating mems structures and cmos structures using oxide fusion bonding |
US7977661B2 (en) | 2007-06-07 | 2011-07-12 | Qimonda Ag | Memory having shared storage material |
US20080303015A1 (en) * | 2007-06-07 | 2008-12-11 | Thomas Happ | Memory having shared storage material |
US7545019B2 (en) * | 2007-06-07 | 2009-06-09 | Qimonda North America Corp. | Integrated circuit including logic portion and memory portion |
US7459716B2 (en) * | 2007-06-11 | 2008-12-02 | Kabushiki Kaisha Toshiba | Resistance change memory device |
US8968536B2 (en) * | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
US9203024B2 (en) * | 2007-07-25 | 2015-12-01 | Intel Corporation | Copper compatible chalcogenide phase change memory with adjustable threshold voltage |
US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
US9000408B2 (en) * | 2007-10-12 | 2015-04-07 | Ovonyx, Inc. | Memory device with low reset current |
US20090107834A1 (en) * | 2007-10-29 | 2009-04-30 | Applied Materials, Inc. | Chalcogenide target and method |
US20090294028A1 (en) * | 2008-06-03 | 2009-12-03 | Nanochip, Inc. | Process for fabricating high density storage device with high-temperature media |
US7888668B2 (en) * | 2008-07-17 | 2011-02-15 | United Microelectronics Corp. | Phase change memory |
US8467236B2 (en) * | 2008-08-01 | 2013-06-18 | Boise State University | Continuously variable resistor |
US20100039919A1 (en) * | 2008-08-15 | 2010-02-18 | Nanochip, Inc. | Cantilever Structure for Use in Seek-and-Scan Probe Storage |
US8377741B2 (en) * | 2008-12-30 | 2013-02-19 | Stmicroelectronics S.R.L. | Self-heating phase change memory cell architecture |
US8530875B1 (en) * | 2010-05-06 | 2013-09-10 | Micron Technology, Inc. | Phase change memory including ovonic threshold switch with layered electrode and methods for forming same |
KR101039120B1 (ko) * | 2011-03-08 | 2011-06-07 | 김현호 | 원터치식 철근 커플러 |
US9166158B2 (en) | 2013-02-25 | 2015-10-20 | Micron Technology, Inc. | Apparatuses including electrodes having a conductive barrier material and methods of forming same |
US9594910B2 (en) * | 2014-03-28 | 2017-03-14 | Intel Corporation | In-system provisioning of firmware for a hardware platform |
US11133461B2 (en) | 2014-09-26 | 2021-09-28 | Intel Corporation | Laminate diffusion barriers and related devices and methods |
KR102483704B1 (ko) * | 2016-03-30 | 2023-01-02 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그 제조 방법 |
US20170338282A1 (en) * | 2016-05-20 | 2017-11-23 | Intel Corporation | Memory module with unpatterned storage material |
KR102544160B1 (ko) * | 2016-09-19 | 2023-06-16 | 에스케이하이닉스 주식회사 | 전압 제어 장치 |
US11295204B2 (en) | 2017-01-06 | 2022-04-05 | International Business Machines Corporation | Area-efficient, reconfigurable, energy-efficient, speed-efficient neural network substrate |
KR102496377B1 (ko) * | 2017-10-24 | 2023-02-06 | 삼성전자주식회사 | 저항변화 물질층을 가지는 비휘발성 메모리소자 |
US10892406B2 (en) | 2018-06-04 | 2021-01-12 | Intel Corporation | Phase change memory structures and devices |
KR102358622B1 (ko) * | 2018-10-12 | 2022-02-04 | 한국과학기술연구원 | 오보닉 임계 스위치를 이용한 인공 뉴런 소자, 그것을 포함하는 인공 신경 칩 및 사용자 장치 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL61678A (en) * | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Programmable cell and programmable electronic arrays comprising such cells |
US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
US4782340A (en) * | 1986-08-22 | 1988-11-01 | Energy Conversion Devices, Inc. | Electronic arrays having thin film line drivers |
US5166758A (en) * | 1991-01-18 | 1992-11-24 | Energy Conversion Devices, Inc. | Electrically erasable phase change memory |
DE69426695T2 (de) * | 1993-04-23 | 2001-08-09 | Irvine Sensors Corp | Elektronisches modul mit einem stapel von ic-chips |
US5543737A (en) * | 1995-02-10 | 1996-08-06 | Energy Conversion Devices, Inc. | Logical operation circuit employing two-terminal chalcogenide switches |
-
1995
- 1995-10-24 US US08/547,349 patent/US5714768A/en not_active Expired - Lifetime
-
1996
- 1996-10-22 JP JP51674797A patent/JP4303317B2/ja not_active Expired - Lifetime
- 1996-10-22 DE DE0888618T patent/DE888618T1/de active Pending
- 1996-10-22 DE DE69636608T patent/DE69636608T2/de not_active Expired - Lifetime
- 1996-10-22 EP EP03003231A patent/EP1326158B1/en not_active Expired - Lifetime
- 1996-10-22 AU AU75196/96A patent/AU7519696A/en not_active Abandoned
- 1996-10-22 DE DE69628674T patent/DE69628674T2/de not_active Expired - Lifetime
- 1996-10-22 EP EP96937723A patent/EP0888618B1/en not_active Expired - Lifetime
- 1996-10-22 CA CA002231377A patent/CA2231377C/en not_active Expired - Fee Related
- 1996-10-22 WO PCT/US1996/016994 patent/WO1997015954A1/en active IP Right Grant
- 1996-10-22 KR KR10-2003-7013850A patent/KR100474530B1/ko not_active IP Right Cessation
- 1996-10-22 KR KR10-1998-0702975A patent/KR100433618B1/ko not_active IP Right Cessation
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7750334B2 (en) | 2003-04-03 | 2010-07-06 | Kabushiki Kaisha Toshiba | Phase change memory device |
US8237143B2 (en) | 2003-04-03 | 2012-08-07 | Kabushiki Kaisha Toshiba | Phase change memory device |
US8022381B2 (en) | 2003-04-03 | 2011-09-20 | Kabushiki Kaisha Toshiba | Phase change memory device |
JP2005012183A (ja) * | 2003-06-18 | 2005-01-13 | Macronix Internatl Co Ltd | メモリセルのしきい値電圧を調節する方法 |
JP2005012186A (ja) * | 2003-06-18 | 2005-01-13 | Macronix Internatl Co Ltd | マルチレベルメモリ素子およびこれをプログラムし読出す方法 |
JP2007512691A (ja) * | 2003-11-28 | 2007-05-17 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | 半導体集積メモリーおよび半導体集積メモリーの製造方法 |
JP4659753B2 (ja) * | 2003-11-28 | 2011-03-30 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | 半導体集積メモリーおよび半導体集積メモリーの製造方法 |
WO2005076355A1 (ja) * | 2004-02-06 | 2005-08-18 | Renesas Technology Corp. | 記憶装置 |
JP2005317787A (ja) * | 2004-04-28 | 2005-11-10 | Matsushita Electric Ind Co Ltd | スイッチング素子およびそれを用いたアレイ型機能素子 |
JP4701427B2 (ja) * | 2004-04-28 | 2011-06-15 | パナソニック株式会社 | スイッチング素子およびそれを用いたアレイ型機能素子 |
US7638786B2 (en) | 2004-11-15 | 2009-12-29 | Renesas Technology Corp. | Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surface |
JP2009530817A (ja) * | 2006-03-17 | 2009-08-27 | マイクロン テクノロジー, インク. | 低消費電力相変化メモリとその形成方法 |
US8173988B2 (en) | 2006-03-17 | 2012-05-08 | Micron Technology, Inc. | Reduced power consumption phase change memory and methods for forming the same |
JP2008235904A (ja) * | 2007-03-21 | 2008-10-02 | Samsung Electronics Co Ltd | 相変化物質層の形成方法及びこれを用いるメモリ装置の製造方法 |
JP2011243980A (ja) * | 2010-05-11 | 2011-12-01 | Micron Technology Inc | カルコゲニド含有デバイス用電極の形成方法 |
Also Published As
Publication number | Publication date |
---|---|
CA2231377C (en) | 2005-06-28 |
EP1326158B1 (en) | 2006-10-04 |
EP0888618A4 (en) | 2000-07-26 |
EP1326158A3 (en) | 2004-05-06 |
DE69628674D1 (de) | 2003-07-17 |
AU7519696A (en) | 1997-05-15 |
CA2231377A1 (en) | 1997-05-01 |
KR100474530B1 (ko) | 2005-03-14 |
US5714768A (en) | 1998-02-03 |
DE69628674T2 (de) | 2004-04-29 |
KR19990067038A (ko) | 1999-08-16 |
WO1997015954A1 (en) | 1997-05-01 |
EP1326158A2 (en) | 2003-07-09 |
KR100433618B1 (ko) | 2004-08-09 |
KR20040000440A (ko) | 2004-01-03 |
EP0888618B1 (en) | 2003-06-11 |
EP0888618A1 (en) | 1999-01-07 |
DE69636608T2 (de) | 2007-07-12 |
DE888618T1 (de) | 1999-06-02 |
JP4303317B2 (ja) | 2009-07-29 |
DE69636608D1 (de) | 2006-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH11514150A (ja) | 論理装置上の第2層位相変化メモリアレイ | |
US8879301B2 (en) | Method and apparatus for controlling state information retention in an apparatus | |
CN112334916A (zh) | 在存储器内计算(cim)电路中的后段制程(beol)电容器的应用 | |
US11881263B2 (en) | Method, system and device for integration of volatile and non-volatile memory bitcells | |
US7978506B2 (en) | Thin film logic device and system | |
US7408240B2 (en) | Memory device | |
US9093635B2 (en) | Controlling on-state current for two-terminal memory | |
US7920414B2 (en) | Asymmetric-threshold three-terminal switching device | |
US7974149B2 (en) | Thin-film memory system equipped with a thin-film address decoder and memory controller | |
US20070007613A1 (en) | Phase change memory with adjustable resistance ratio and fabricating method thereof | |
JP2007501519A (ja) | メモリ用相変化アクセス装置 | |
US8198158B2 (en) | Method for thin film memory | |
US9159409B2 (en) | Method and apparatus for providing complimentary state retention | |
US8228719B2 (en) | Thin film input/output | |
US20130083048A1 (en) | Integrated circuit with active memory and passive variable resistive memory with shared memory control logic and method of making same | |
US11126550B1 (en) | Integrating a resistive memory system into a multicore CPU die to achieve massive memory parallelism | |
KR20030017396A (ko) | 박막 트랜지스터 메모리 디바이스 | |
WO2023039847A1 (zh) | 阻变存储器单元、阻变存储器以及电子设备 | |
Hirose et al. | 1-Mbit 3D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs | |
US20220180934A1 (en) | Read window budget optimization for three dimensional crosspoint memory | |
WO2023185207A1 (zh) | 一种铁电存储阵列、铁电存储器以及其操作方法 | |
Kinugawa et al. | Cell technology directions for advanced MPUs and other memory-embedded logic devices | |
CN116867287A (zh) | 相变存储器及其形成方法、芯片 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070417 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20070713 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20070820 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071017 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071204 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080303 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080414 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080604 |
|
A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20080604 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090331 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090424 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120501 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120501 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130501 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140501 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |