JP2009522792A - モノリシックセラミック素子および作製方法 - Google Patents
モノリシックセラミック素子および作製方法 Download PDFInfo
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- JP2009522792A JP2009522792A JP2008548927A JP2008548927A JP2009522792A JP 2009522792 A JP2009522792 A JP 2009522792A JP 2008548927 A JP2008548927 A JP 2008548927A JP 2008548927 A JP2008548927 A JP 2008548927A JP 2009522792 A JP2009522792 A JP 2009522792A
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- ceramic
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- multilayer structure
- ceramic element
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- 239000003989 dielectric material Substances 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 4
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
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- -1 rare earth lanthanum borate Chemical class 0.000 claims description 2
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- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- CNLWCVNCHLKFHK-UHFFFAOYSA-N aluminum;lithium;dioxido(oxo)silane Chemical compound [Li+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O CNLWCVNCHLKFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910001597 celsian Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000006112 glass ceramic composition Substances 0.000 description 1
- 150000002611 lead compounds Chemical group 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SVRRMEJIJVIXAM-UHFFFAOYSA-N oxobismuth;ruthenium Chemical compound [Ru].[Bi]=O SVRRMEJIJVIXAM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052642 spodumene Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
a)上記の強制層は、焼成後に再び取り除かなければならない、
b)上記の焼成補助手段は機能性セラミックにも拡散して進入し、その組成を変化させて、電気的な機能に不利に影響し、また少なくとも制御不能に影響してしまう、さらに
c)外側の金属コンタクトを後で被着しなければならないか、または少なくとも強制層の残りによって汚染されてしまうという欠点があるのである。
図1は、非対称の多層構造を有するセラミックモノリシック素子を概略断面図で示しており、
図2は、非対称構造を有するモノリシックセラミック多層素子を概略断面図で示しており、
図3は、ESD/EMIフィルタとして構成されたセラミック素子を概略断面図で示しており、
図4は、別のESD/EMIフィルタを概略断面図で示しており、
図5は、上記のセラミック素子を作製する際の種々異なる方法ステップを概略断面図で示している。
Claims (25)
- モノリシック多層構造を有するセラミック素子において、
該セラミック素子は、
− 機能性セラミックからなる機能層(F)と、
− 前記の多層構造にて当該機能層に直に隣接する誘電再結晶材料製のテンション層(S)と、
− 少なくとも2つのメタライゼーション面とを有しており、
当該メタライゼーション面の間に機能層が配置されており、
当該メタライゼーション面に導電構造が配置されており、
当該導電構造は、前記の機能層と共に素子機能を実現しており、
前記の機能性セラミックは、前記の誘電材料の相転移温度以上の焼成温度を有することを特徴とする、
モノリシック多層構造を有するセラミック素子。 - 前記の機能層(F)内に、導電構造(LS)を有する複数のメタライゼーション面が配置されている、
請求項1に記載のセラミック素子。 - 前記の再結晶化材料はガラスセラミックである、
請求項1または2記載のセラミック素子。 - 抵抗、キャパシタンス、インダクタンス、バリスタまたはサーミスタから選択した複数の素子機能が組み込まれており、
前記の機能性セラミックは、実現される素子タイプに相応して、抵抗材料、コンデンサセラミック、フェライト、バリスタ材料、PTCセラミックまたはNTCセラミックから選択される、
請求項1から3までのいずれか1項に記載のセラミック素子。 - 前記の誘電材料の相転移または再結晶化温度は、機能性セラミックの焼成温度よりも少なくとも50K低い、
請求項1から4までのいずれか1項に記載のセラミック素子。 - 前記のテンション層(S)と、少なくとも1つの機能層(F)とは交互に並んでいる、
請求項1から5までのいずれか1項に記載のセラミック素子。 - 前記の多層構造は、積層方向に見て層の順序および層厚が対称である、
請求項6に記載のセラミック素子。 - 前記の多層構造は下側に、はんだ付け可能な電気コンタクト面(KF)を有しており、
当該のコンタクト面にはスルーコンタクト(DK)が設けられており、
該スルーコンタクトにより、前記のはんだ付け可能なコンタクト(LK)と、多層構造の内部および/または表面の導電構造(LS)とが導電的に接続される、
請求項1から7までのいずれか1項に記載のセラミック素子。 - 前記のテンション層(S)の層厚は、15〜300μmである、
請求項1から8までのいずれか1項に記載のセラミック素子。 - 前記の多層構造は、機能層(F)およびテンション層(S)とは異なる多層構造を有するか、または種々異なる機能層を含む、
請求項1から9までのいずれか1項に記載のセラミック素子。 - 前記のテンション層(S)は、Al2O3,TiO2およびZrO2から選択した結晶材料の分離相を含む、
請求項1から10までのいずれか1項に記載のセラミック素子。 - 前記のテンション層(S)は、アルカリホウ素ケイ酸、アルミノホウ素ケイ酸、アルミノケイ酸、ランタンボラートチタン酸またはアルカリ希土類ランタンボラートから構成される、
請求項3から11までのいずれか1項に記載のセラミック素子。 - 前記の機能性セラミック(F)の焼成温度は950℃以上である、
請求項1から12までのいずれか1項に記載のセラミック素子。 - ディスクリート形の電気素子が取り付けられかつ前記の機能素子に電気接続される表面を有する、
請求項1から13までのいずれか1項に記載のセラミック素子。 - セラミック素子を作製する方法において、
− バインダを用いて、機能性セラミックから第1グリーンシート(GF)を、また再結晶誘電材料から第2グリーンシート(GS)を形成して、当該のグリーンシートにヴィアを形成して導電性ペーストを充填し、
− 当該のグリーンシートに導電構造(LS)を形成し、
− 前記の第1および第2のグリーンシートを上下に積層し、
− 当該の積層を成形して第1の温度T1でバインダ除去し、
− 当該の積層をT2>T1である第2の温度にして、前記の誘電材料を再結晶化し、
− 当該の積層をT3>T2である第3の温度にして、前記の機能性セラミックの材料を焼成してモノリシック多層構造を得ることを特徴とする、
請求項1から14までのいずれか1項に記載のセラミック素子を作製する方法。 - 前記の積層における外側の層としてテンション層(S)を設け、
前記の機能性セラミックの焼成の後、セラミック多層構造の上側に導電構造(LS)またはコンタクト面(KF)を形成して焼成する、
請求項15に記載の方法。 - 前記の多層構造の上側に、電気的に互いに絶縁された少なくとも2つのコンタクト面(KF)または導電構造(LS)を形成し、
前記の2つのコンタクト面を高抵抗に接続する抵抗構造(WS)を前記のセラミック多層構造に形成する、
請求項16に記載の方法。 - 前記の抵抗構造(WS)を印刷して焼成する、
請求項17に記載の方法。 - 前記の抵抗構造(WS)をスパッタリングする、
請求項17に記載の方法。 - 引き続いて前記の抵抗層(WS)にさらにパッシベーション層(P)を形成する、
請求項15から19までのいずれか1項に記載の方法。 - 前記の少なくとも第2のグリーンシート(GS)を作製するため、μm範囲の粒子サイズを有するガラス粉末を使用し、
当該のガラス粉末には所定の結晶格子を有する材料の結晶粒子が含まれている、
請求項15から20までのいずれか1項に記載の方法。 - 20〜60の重量パーセントの割合で結晶粒子が含まれているガラス粉末を使用する、
請求項21に記載の方法。 - 平行平面プレート間で前記のシートを一軸圧縮して前記の積層の焼成を行う、
請求項15から22までのいずれか1項に記載の方法。 - 前記の積層にて、複数の第1グリーンシート(GF)とを、当該のグリーンシートにそれぞれ配置された導電構造(LS)と直接上下に積層し、ここで前記の複数の第1グリーンシートはブロックを形成しかつ焼成後にただ1つの機能層(F)になり、
少なくとも1つのブロックと、第2グリーンシート(GF)とを積層する、
請求項15から23までのいずれか1項に記載の方法。 - 少なくとも2つの相異なる第1グリーンシート(GF)を有する積層を、種々異なる機能性セラミックによって形成し、
前記の導電構造(LS)および/または電気コンタクト面(KF)により、セラミック多層構造に種々異なる素子機能を実現する、
請求項15から24までのいずれか1項に記載の方法。
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