JPWO2018025695A1 - Esd保護機能付き実装型複合部品 - Google Patents
Esd保護機能付き実装型複合部品 Download PDFInfo
- Publication number
- JPWO2018025695A1 JPWO2018025695A1 JP2018531844A JP2018531844A JPWO2018025695A1 JP WO2018025695 A1 JPWO2018025695 A1 JP WO2018025695A1 JP 2018531844 A JP2018531844 A JP 2018531844A JP 2018531844 A JP2018531844 A JP 2018531844A JP WO2018025695 A1 JPWO2018025695 A1 JP WO2018025695A1
- Authority
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- Prior art keywords
- esd protection
- conductor
- protection function
- inductor
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000002131 composite material Substances 0.000 title claims abstract description 105
- 239000004020 conductor Substances 0.000 claims abstract description 164
- 239000010409 thin film Substances 0.000 claims abstract description 72
- 239000003990 capacitor Substances 0.000 claims description 49
- 230000003071 parasitic effect Effects 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 30
- 239000010410 layer Substances 0.000 description 26
- 239000000758 substrate Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
- H01F2017/0026—Multilayer LC-filter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
- H01F27/292—Surface mounted devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Coils Or Transformers For Communication (AREA)
- Filters And Equalizers (AREA)
Abstract
Description
10、10A、10B、10C:実装型複合部品
20:インダクタ
21:第1面
22:第2面
23:第1端面
24:第2端面
25:側面
30、30A、30B:薄膜部品
31:裏面
32:表面
41、42:導電性接合材
50:キャパシタ
90:外部回路基板
200:素体
201:インダクタ用導体
202:磁性体層
203:層間接続導体
211:第1外部導体
212:第2外部導体
213:第3外部導体
300、300A:素体
310:半導体基板
310A:半導体基板
311:第1端子導体
312:第2端子導体
313:第3端子導体
320、320A:再配線層
330:ESD保護素子
331:n型半導体層
332,333:p型半導体部
341:第1対向電極
342:第2対向電極
343:誘電体層
351、352、353、354:コンタクトホール
361、362、362A、363:配線導体
500:誘電体素体
501、502:外部導体
900:基板本体
901、902、903:ランド導体
2011:第1端
2012:第2端
P1:第1端子
P2:第2端子
P3:第3端子
Claims (6)
- 磁性体を含む直方体の素体と、該素体内に形成されたインダクタ導体と、該インダクタ導体に接続され、前記素体の第1方向の両端にそれぞれ個別に形成された第1外部導体および第2外部導体と、前記素体の第1方向の途中位置に形成された第3外部導体と、を備える実装型のインダクタと、
平板状の素体と、該素体の内部に形成されたESD保護素子と、該ESD保護素子の第1端子に接続され、前記素体の表面に形成された第1端子導体と、前記ESD保護素子の第2端子に接続され、前記素体の表面に形成された第2端子導体と、を備えた薄膜部品と、を備え、
前記薄膜部品は、
前記第1端子導体と前記第1外部導体とが接続され、前記第2端子導体と前記第3外部導体とが接続されるように、
前記素体における前記第1方向に平行な第1面に実装されている、
ESD保護機能付き実装型複合部品。 - 前記ESD保護素子の寄生キャパシタと、前記インダクタとによって、フィルタが構成されている、
請求項1に記載のESD保護機能付き実装型複合部品。 - 前記薄膜部品は、前記素体の内部に形成されたキャパシタと、前記素体の表面に形成された第3端子導体を備え、
該キャパシタの第1対向電極は前記第2端子導体に接続され、前記キャパシタの第2対向電極は、前記第3端子導体に接続されており、
前記第3端子導体は、前記第2外部導体に実装されている、
請求項1に記載のESD保護機能付き実装型複合部品。 - 前記キャパシタ、前記ESD保護素子の寄生キャパシタ、および、前記インダクタによって、フィルタが構成されている、
請求項3に記載のESD保護機能付き実装型複合部品。 - 前記薄膜部品の面積は、前記第1面の面積よりも小さく、
前記第1面に直交する方向に視て、前記薄膜部品は、前記第1面に重なっている、
請求項1乃至請求項4のいずれかに記載のESD保護機能付き実装型複合部品。 - 前記薄膜部品の面積は、前記第1面の面積よりも大きく、
前記第1面に直交する方向に視て、前記薄膜部品は、前記第1面に重なっている、
請求項1乃至請求項4のいずれかに記載のESD保護機能付き実装型複合部品。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016150964 | 2016-08-01 | ||
JP2016150964 | 2016-08-01 | ||
PCT/JP2017/026756 WO2018025695A1 (ja) | 2016-08-01 | 2017-07-25 | Esd保護機能付き実装型複合部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018025695A1 true JPWO2018025695A1 (ja) | 2018-11-22 |
JP6687115B2 JP6687115B2 (ja) | 2020-04-22 |
Family
ID=61074017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018531844A Active JP6687115B2 (ja) | 2016-08-01 | 2017-07-25 | Esd保護機能付き実装型複合部品 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10916938B2 (ja) |
JP (1) | JP6687115B2 (ja) |
CN (1) | CN208797911U (ja) |
WO (1) | WO2018025695A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20210155431A (ko) * | 2020-06-15 | 2021-12-23 | 삼성디스플레이 주식회사 | 시스템 인 패키지 및 이를 포함하는 전자 모듈 |
WO2022196642A1 (ja) * | 2021-03-16 | 2022-09-22 | 株式会社村田製作所 | 過渡電圧吸収回路 |
CN117178359A (zh) * | 2021-04-13 | 2023-12-05 | 株式会社村田制作所 | 瞬态电压吸收元件以及瞬态电压吸收电路 |
US20230197644A1 (en) * | 2021-12-17 | 2023-06-22 | Intel Corporation | Semiconductor Package, Semiconductor Die and Method for Forming a Semiconductor Package or a Semiconductor Die |
CN115225050B (zh) * | 2022-09-20 | 2022-12-20 | 深圳新声半导体有限公司 | 用于谐振器制作的方法、体声波谐振器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0595031U (ja) * | 1992-05-27 | 1993-12-24 | 太陽誘電株式会社 | 複合セラミック電子部品 |
JPH09135140A (ja) * | 1995-11-10 | 1997-05-20 | Tdk Corp | 複合回路部品 |
JP2006115460A (ja) * | 2004-10-11 | 2006-04-27 | Samsung Electro Mech Co Ltd | バリスター、lcフィルター兼用複合素子 |
JP2007214166A (ja) * | 2006-02-07 | 2007-08-23 | Matsushita Electric Ind Co Ltd | 複合電子部品およびその製造方法 |
JP2007250973A (ja) * | 2006-03-17 | 2007-09-27 | Taiyo Yuden Co Ltd | デカップリングデバイス |
JP2009522792A (ja) * | 2006-01-05 | 2009-06-11 | エプコス アクチエンゲゼルシャフト | モノリシックセラミック素子および作製方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2788328B2 (ja) | 1990-05-21 | 1998-08-20 | 三菱電機株式会社 | 可逆式冷間圧延機の自動板厚制御装置 |
JP2000252131A (ja) | 1999-03-01 | 2000-09-14 | Tdk Corp | 積層チップ部品 |
US7742314B2 (en) * | 2005-09-01 | 2010-06-22 | Ngk Spark Plug Co., Ltd. | Wiring board and capacitor |
JP2008054055A (ja) | 2006-08-24 | 2008-03-06 | Kenwood Corp | 無線送信装置 |
US7786837B2 (en) * | 2007-06-12 | 2010-08-31 | Alpha And Omega Semiconductor Incorporated | Semiconductor power device having a stacked discrete inductor structure |
WO2011152256A1 (ja) | 2010-06-01 | 2011-12-08 | 株式会社村田製作所 | 高周波モジュール |
WO2015025753A1 (ja) | 2013-08-19 | 2015-02-26 | 株式会社村田製作所 | Esd保護機能付薄膜キャパシタ装置およびその製造方法 |
-
2017
- 2017-07-25 JP JP2018531844A patent/JP6687115B2/ja active Active
- 2017-07-25 WO PCT/JP2017/026756 patent/WO2018025695A1/ja active Application Filing
- 2017-07-25 CN CN201790000842.4U patent/CN208797911U/zh active Active
-
2018
- 2018-12-21 US US16/229,115 patent/US10916938B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0595031U (ja) * | 1992-05-27 | 1993-12-24 | 太陽誘電株式会社 | 複合セラミック電子部品 |
JPH09135140A (ja) * | 1995-11-10 | 1997-05-20 | Tdk Corp | 複合回路部品 |
JP2006115460A (ja) * | 2004-10-11 | 2006-04-27 | Samsung Electro Mech Co Ltd | バリスター、lcフィルター兼用複合素子 |
JP2009522792A (ja) * | 2006-01-05 | 2009-06-11 | エプコス アクチエンゲゼルシャフト | モノリシックセラミック素子および作製方法 |
JP2007214166A (ja) * | 2006-02-07 | 2007-08-23 | Matsushita Electric Ind Co Ltd | 複合電子部品およびその製造方法 |
JP2007250973A (ja) * | 2006-03-17 | 2007-09-27 | Taiyo Yuden Co Ltd | デカップリングデバイス |
Also Published As
Publication number | Publication date |
---|---|
US20190123554A1 (en) | 2019-04-25 |
US10916938B2 (en) | 2021-02-09 |
CN208797911U (zh) | 2019-04-26 |
WO2018025695A1 (ja) | 2018-02-08 |
JP6687115B2 (ja) | 2020-04-22 |
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