JP2009071286A5 - - Google Patents

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Publication number
JP2009071286A5
JP2009071286A5 JP2008202638A JP2008202638A JP2009071286A5 JP 2009071286 A5 JP2009071286 A5 JP 2009071286A5 JP 2008202638 A JP2008202638 A JP 2008202638A JP 2008202638 A JP2008202638 A JP 2008202638A JP 2009071286 A5 JP2009071286 A5 JP 2009071286A5
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JP
Japan
Prior art keywords
semiconductor film
forming
display device
manufacturing
microcrystalline semiconductor
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Granted
Application number
JP2008202638A
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English (en)
Japanese (ja)
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JP5478037B2 (ja
JP2009071286A (ja
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Priority to JP2008202638A priority Critical patent/JP5478037B2/ja
Priority claimed from JP2008202638A external-priority patent/JP5478037B2/ja
Publication of JP2009071286A publication Critical patent/JP2009071286A/ja
Publication of JP2009071286A5 publication Critical patent/JP2009071286A5/ja
Application granted granted Critical
Publication of JP5478037B2 publication Critical patent/JP5478037B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008202638A 2007-08-17 2008-08-06 表示装置の作製方法 Expired - Fee Related JP5478037B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008202638A JP5478037B2 (ja) 2007-08-17 2008-08-06 表示装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007212903 2007-08-17
JP2007212903 2007-08-17
JP2007212904 2007-08-17
JP2007212904 2007-08-17
JP2008202638A JP5478037B2 (ja) 2007-08-17 2008-08-06 表示装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013262465A Division JP2014131036A (ja) 2007-08-17 2013-12-19 成膜装置

Publications (3)

Publication Number Publication Date
JP2009071286A JP2009071286A (ja) 2009-04-02
JP2009071286A5 true JP2009071286A5 (fr) 2011-08-04
JP5478037B2 JP5478037B2 (ja) 2014-04-23

Family

ID=40363287

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2008202638A Expired - Fee Related JP5478037B2 (ja) 2007-08-17 2008-08-06 表示装置の作製方法
JP2013262465A Withdrawn JP2014131036A (ja) 2007-08-17 2013-12-19 成膜装置
JP2015225539A Expired - Fee Related JP6154880B2 (ja) 2007-08-17 2015-11-18 表示装置の作製方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2013262465A Withdrawn JP2014131036A (ja) 2007-08-17 2013-12-19 成膜装置
JP2015225539A Expired - Fee Related JP6154880B2 (ja) 2007-08-17 2015-11-18 表示装置の作製方法

Country Status (4)

Country Link
US (1) US7611930B2 (fr)
JP (3) JP5478037B2 (fr)
CN (1) CN101369539B (fr)
TW (1) TWI506677B (fr)

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US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
US8338240B2 (en) * 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
US8895116B2 (en) 2010-11-04 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of crystalline semiconductor film and manufacturing method of semiconductor device
US8450158B2 (en) * 2010-11-04 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
US9048327B2 (en) * 2011-01-25 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device
US9111775B2 (en) 2011-01-28 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Silicon structure and manufacturing methods thereof and of capacitor including silicon structure
US8828859B2 (en) * 2011-02-11 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor film and method for manufacturing semiconductor device
CN102646634B (zh) * 2011-04-29 2013-06-12 京东方科技集团股份有限公司 Tft-lcd阵列基板制造方法
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
WO2015181679A1 (fr) * 2014-05-27 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Dispositif semi-conducteur et son procédé de fabrication
CN104532192B (zh) * 2014-12-19 2018-01-30 深圳市华星光电技术有限公司 蒸镀装置
JP6861479B2 (ja) * 2016-06-24 2021-04-21 東京エレクトロン株式会社 プラズマ成膜方法およびプラズマ成膜装置
CN107658267B (zh) * 2017-09-15 2020-11-06 惠科股份有限公司 阵列基板的制造方法
CN108417583B (zh) * 2018-03-09 2021-10-29 惠科股份有限公司 一种阵列基板的制造方法和阵列基板
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CN110634390A (zh) * 2019-09-20 2019-12-31 武汉天马微电子有限公司 一种显示面板及显示装置
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