JP5764394B2 - 光電変換素子 - Google Patents
光電変換素子 Download PDFInfo
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- JP5764394B2 JP5764394B2 JP2011135026A JP2011135026A JP5764394B2 JP 5764394 B2 JP5764394 B2 JP 5764394B2 JP 2011135026 A JP2011135026 A JP 2011135026A JP 2011135026 A JP2011135026 A JP 2011135026A JP 5764394 B2 JP5764394 B2 JP 5764394B2
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- photoelectric conversion
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- 238000006243 chemical reaction Methods 0.000 title claims description 90
- 239000004065 semiconductor Substances 0.000 claims description 170
- 239000000758 substrate Substances 0.000 claims description 50
- 239000012535 impurity Substances 0.000 claims description 25
- 239000010410 layer Substances 0.000 description 199
- 239000010408 film Substances 0.000 description 77
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
- 238000000034 method Methods 0.000 description 28
- 239000013078 crystal Substances 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229920001940 conductive polymer Polymers 0.000 description 4
- 238000001678 elastic recoil detection analysis Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000628 photoluminescence spectroscopy Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
本実施の形態では、本発明の一態様である光電変換素子について説明する。
実施の形態1にて説明した光電変換素子は、表示装置の画素が設けられる基板上に、画素トランジスタと同一の工程で形成することができる。なぜなら、実施の形態1で説明した光電変換素子は、表示装置の画素トランジスタを変形させた形状だからである。
実施の形態2にて説明したように、本発明の一態様である光電変換素子は、表示装置の画素トランジスタと同一の基板上に形成することができる。
実施の形態1で説明した光電変換素子及び実施の形態3で説明した表示装置は、電子機器に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用のモニタ、電子ペーパー、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
102 第1の導電層
104 第1の絶縁層
106 第1の半導体層
108 第2の半導体層
110 不純物半導体層
112 第2の導電層
114 第2の絶縁層
116 第3の導電層
150 第1の開口部
152 第2の開口部
154 第1の配線
156 第2の配線
158 第3の配線
160 第1の開口部
162 第2の開口部
164 第1の配線
166 第2の配線
168 第3の配線
169 第4の配線
170 第1の開口部
172 第2の開口部
174 第1の配線
176 第2の配線
178 第3の配線
180 第1の開口部
182 第2の開口部
184 第1の配線
186 第2の配線
188 第3の配線
190 第1の開口部
192 第2の開口部
194 第1の配線
196 第2の配線
198 第3の配線
200 抵抗素子
202 抵抗素子
210 高抵抗配線
212 第3の開口部
214 第4の開口部
216 トランジスタ
218 高抵抗配線
300 第1の半導体膜
302 第2の半導体膜
304 不純物半導体膜
306 薄膜積層体
308 導電膜
310 絶縁膜
312 導電膜
314 画素開口部
400 画素部
402 走査線駆動回路
403 信号線駆動回路
404 シフトレジスタ
405 アナログスイッチ
406 シフトレジスタ
407 バッファ
500 筐体
501 筐体
502 表示部
503 表示部
504 蝶番
505 電源入力端子
506 操作キー
507 スピーカ
511 筐体
512 表示部
521 筐体
522 表示部
523 スタンド
550 車内広告板
560 電子看板
Claims (2)
- 基板上方の下部電極及び配線と、
前記下部電極及び前記配線を覆う第1の絶縁層と、
前記第1の絶縁層上方の第1の半導体層と、
前記第1の半導体層上方に、前記第1の半導体層の一部を露出して設けられた第2の半導体層と、
前記第2の半導体層上方の不純物半導体層と、
前記不純物半導体層上方の導電層と、
少なくとも前記第1の半導体層と前記導電層を覆う第2の絶縁層と、
前記第2の絶縁層上方の、透光性を有する上部電極と、を有し、
前記第2の絶縁層は、第1の開口部と第2の開口部とを有し、
前記第1の開口部において、前記下部電極と、前記第1の半導体層の前記露出した一部と、前記上部電極と、を有する受光部が設けられており、
前記第2の開口部において、前記配線と前記上部電極とが電気的に接続されており、
前記下部電極と前記配線との間に、抵抗素子が設けられており、
前記受光部は、前記導電層に囲まれていることを特徴とする光電変換素子。 - 請求項1において、
前記抵抗素子は、前記上部電極と同層に設けられており、前記配線及び前記導電層よりも電気抵抗率が高いことを特徴とする光電変換素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011135026A JP5764394B2 (ja) | 2010-06-18 | 2011-06-17 | 光電変換素子 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010139737 | 2010-06-18 | ||
JP2010139737 | 2010-06-18 | ||
JP2011135026A JP5764394B2 (ja) | 2010-06-18 | 2011-06-17 | 光電変換素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012023362A JP2012023362A (ja) | 2012-02-02 |
JP2012023362A5 JP2012023362A5 (ja) | 2014-07-24 |
JP5764394B2 true JP5764394B2 (ja) | 2015-08-19 |
Family
ID=45327862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011135026A Expired - Fee Related JP5764394B2 (ja) | 2010-06-18 | 2011-06-17 | 光電変換素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8487306B2 (ja) |
JP (1) | JP5764394B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102512106B1 (ko) * | 2017-09-01 | 2023-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 표시 장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4982246A (en) * | 1989-06-21 | 1991-01-01 | General Electric Company | Schottky photodiode with silicide layer |
JP4030627B2 (ja) | 1997-09-20 | 2008-01-09 | 株式会社半導体エネルギー研究所 | イメージセンサ機能を有する一体型液晶表示パネル |
JP2000156522A (ja) * | 1998-11-19 | 2000-06-06 | Canon Inc | 光電変換装置 |
JP2007165865A (ja) * | 2005-11-18 | 2007-06-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JP4567028B2 (ja) | 2006-09-26 | 2010-10-20 | エルジー ディスプレイ カンパニー リミテッド | マルチタッチ感知機能を有する液晶表示装置とその駆動方法 |
KR101281830B1 (ko) | 2006-09-26 | 2013-07-03 | 엘지디스플레이 주식회사 | 멀티 터치 감지기능을 갖는 액정표시장치와 그 구동방법 |
US8514165B2 (en) * | 2006-12-28 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7611930B2 (en) * | 2007-08-17 | 2009-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing display device |
JP2009086565A (ja) | 2007-10-03 | 2009-04-23 | Mitsubishi Electric Corp | 光センサ内蔵表示装置 |
JP5785770B2 (ja) | 2010-05-14 | 2015-09-30 | 株式会社半導体エネルギー研究所 | 微結晶半導体膜の作製方法、及び半導体装置の作製方法 |
-
2011
- 2011-06-17 US US13/163,166 patent/US8487306B2/en not_active Expired - Fee Related
- 2011-06-17 JP JP2011135026A patent/JP5764394B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2012023362A (ja) | 2012-02-02 |
US20110309361A1 (en) | 2011-12-22 |
US8487306B2 (en) | 2013-07-16 |
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