JP2009027146A5 - - Google Patents
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- Publication number
- JP2009027146A5 JP2009027146A5 JP2008138376A JP2008138376A JP2009027146A5 JP 2009027146 A5 JP2009027146 A5 JP 2009027146A5 JP 2008138376 A JP2008138376 A JP 2008138376A JP 2008138376 A JP2008138376 A JP 2008138376A JP 2009027146 A5 JP2009027146 A5 JP 2009027146A5
- Authority
- JP
- Japan
- Prior art keywords
- spacer
- mask
- lines
- etching
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000006850 spacer group Chemical group 0.000 claims 55
- 238000000034 method Methods 0.000 claims 35
- 238000005530 etching Methods 0.000 claims 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 6
- 238000003780 insertion Methods 0.000 claims 6
- 230000037431 insertion Effects 0.000 claims 6
- 239000000463 material Substances 0.000 claims 6
- 238000001020 plasma etching Methods 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 6
- 238000001039 wet etching Methods 0.000 claims 5
- 238000000059 patterning Methods 0.000 claims 4
- 229920002120 photoresistant polymer Polymers 0.000 claims 4
- 238000001312 dry etching Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000009966 trimming Methods 0.000 claims 2
- 238000003860 storage Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93261807P | 2007-06-01 | 2007-06-01 | |
| US60/932,618 | 2007-06-01 | ||
| US11/875,205 | 2007-10-19 | ||
| US11/875,205 US7846849B2 (en) | 2007-06-01 | 2007-10-19 | Frequency tripling using spacer mask having interposed regions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009027146A JP2009027146A (ja) | 2009-02-05 |
| JP2009027146A5 true JP2009027146A5 (enExample) | 2011-07-14 |
| JP5236996B2 JP5236996B2 (ja) | 2013-07-17 |
Family
ID=39739769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008138376A Expired - Fee Related JP5236996B2 (ja) | 2007-06-01 | 2008-05-27 | 介挿領域を有するスペーサマスクを用いた頻度の３倍化 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7846849B2 (enExample) |
| EP (1) | EP1998362A2 (enExample) |
| JP (1) | JP5236996B2 (enExample) |
| KR (1) | KR100991339B1 (enExample) |
| CN (1) | CN101315515B (enExample) |
| SG (1) | SG148135A1 (enExample) |
| TW (1) | TWI381424B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7807578B2 (en) * | 2007-06-01 | 2010-10-05 | Applied Materials, Inc. | Frequency doubling using spacer mask |
| KR101203201B1 (ko) * | 2008-06-13 | 2012-11-21 | 도쿄엘렉트론가부시키가이샤 | 반도체 장치의 제조 방법 |
| US9953885B2 (en) * | 2009-10-27 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI shape near fin bottom of Si fin in bulk FinFET |
| US7923305B1 (en) * | 2010-01-12 | 2011-04-12 | Sandisk 3D Llc | Patterning method for high density pillar structures |
| US8828885B2 (en) | 2013-01-04 | 2014-09-09 | Taiwan Semiconductor Manufacturing Company Limited | Photo resist trimmed line end space |
| US8865600B2 (en) * | 2013-01-04 | 2014-10-21 | Taiwan Semiconductor Manufacturing Company Limited | Patterned line end space |
| CN104425223B (zh) * | 2013-08-28 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | 图形化方法 |
| US9070630B2 (en) * | 2013-11-26 | 2015-06-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming patterns |
| US9524878B2 (en) * | 2014-10-02 | 2016-12-20 | Macronix International Co., Ltd. | Line layout and method of spacer self-aligned quadruple patterning for the same |
| CN105590894B (zh) * | 2014-11-12 | 2018-12-25 | 旺宏电子股份有限公司 | 线路布局以及线路布局的间隙壁自对准四重图案化的方法 |
| CN107785247A (zh) * | 2016-08-24 | 2018-03-09 | 中芯国际集成电路制造(上海)有限公司 | 金属栅极及半导体器件的制造方法 |
| US10566194B2 (en) * | 2018-05-07 | 2020-02-18 | Lam Research Corporation | Selective deposition of etch-stop layer for enhanced patterning |
| US10811256B2 (en) * | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
| KR102863979B1 (ko) * | 2019-04-08 | 2025-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 포토레지스트 프로파일들을 개질하고 임계 치수들을 튜닝하기 위한 방법들 |
| CN112309838B (zh) * | 2019-07-31 | 2023-07-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US12068168B2 (en) * | 2022-02-17 | 2024-08-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Processes for reducing line-end spacing |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5328810A (en) | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
| KR100354440B1 (ko) * | 2000-12-04 | 2002-09-28 | 삼성전자 주식회사 | 반도체 장치의 패턴 형성 방법 |
| JP4235404B2 (ja) * | 2002-06-12 | 2009-03-11 | キヤノン株式会社 | マスクの製造方法 |
| US6924191B2 (en) | 2002-06-20 | 2005-08-02 | Applied Materials, Inc. | Method for fabricating a gate structure of a field effect transistor |
| JP2004207385A (ja) * | 2002-12-24 | 2004-07-22 | Rohm Co Ltd | マスク、その製造方法およびこれを用いた半導体装置の製造方法 |
| DE10345455A1 (de) * | 2003-09-30 | 2005-05-04 | Infineon Technologies Ag | Verfahren zum Erzeugen einer Hartmaske und Hartmasken-Anordnung |
| JP2005203672A (ja) * | 2004-01-19 | 2005-07-28 | Sony Corp | 半導体装置の製造方法 |
| US7064078B2 (en) * | 2004-01-30 | 2006-06-20 | Applied Materials | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
| US7115525B2 (en) | 2004-09-02 | 2006-10-03 | Micron Technology, Inc. | Method for integrated circuit fabrication using pitch multiplication |
| CN1832109A (zh) * | 2005-03-08 | 2006-09-13 | 联华电子股份有限公司 | 掩模的制造方法与图案化制造方法 |
| US7253118B2 (en) * | 2005-03-15 | 2007-08-07 | Micron Technology, Inc. | Pitch reduced patterns relative to photolithography features |
| KR100674970B1 (ko) * | 2005-04-21 | 2007-01-26 | 삼성전자주식회사 | 이중 스페이서들을 이용한 미세 피치의 패턴 형성 방법 |
| US7560390B2 (en) * | 2005-06-02 | 2009-07-14 | Micron Technology, Inc. | Multiple spacer steps for pitch multiplication |
| KR100752674B1 (ko) * | 2006-10-17 | 2007-08-29 | 삼성전자주식회사 | 미세 피치의 하드마스크 패턴 형성 방법 및 이를 이용한반도체 소자의 미세 패턴 형성 방법 |
-
2007
- 2007-10-19 US US11/875,205 patent/US7846849B2/en not_active Expired - Fee Related
-
2008
- 2008-05-27 TW TW097119558A patent/TWI381424B/zh not_active IP Right Cessation
- 2008-05-27 JP JP2008138376A patent/JP5236996B2/ja not_active Expired - Fee Related
- 2008-05-28 SG SG200804042-0A patent/SG148135A1/en unknown
- 2008-05-29 EP EP08157220A patent/EP1998362A2/en not_active Withdrawn
- 2008-05-29 KR KR1020080050414A patent/KR100991339B1/ko not_active Expired - Fee Related
- 2008-05-30 CN CN2008100983623A patent/CN101315515B/zh not_active Expired - Fee Related
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