TWI381424B - 利用具有插入區之間隔遮罩的三倍頻方法 - Google Patents
利用具有插入區之間隔遮罩的三倍頻方法 Download PDFInfo
- Publication number
- TWI381424B TWI381424B TW097119558A TW97119558A TWI381424B TW I381424 B TWI381424 B TW I381424B TW 097119558 A TW097119558 A TW 097119558A TW 97119558 A TW97119558 A TW 97119558A TW I381424 B TWI381424 B TW I381424B
- Authority
- TW
- Taiwan
- Prior art keywords
- mask
- spacer
- layer
- etching
- group
- Prior art date
Links
- 125000006850 spacer group Chemical group 0.000 title claims description 236
- 229920002120 photoresistant polymer Polymers 0.000 claims description 133
- 238000000034 method Methods 0.000 claims description 131
- 238000005530 etching Methods 0.000 claims description 72
- 239000004065 semiconductor Substances 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 56
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 238000003780 insertion Methods 0.000 claims description 15
- 230000037431 insertion Effects 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 15
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 13
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- SGWCNDDOFLBOQV-UHFFFAOYSA-N oxidanium;fluoride Chemical compound O.F SGWCNDDOFLBOQV-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 266
- 229910052732 germanium Inorganic materials 0.000 description 22
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 22
- 239000007789 gas Substances 0.000 description 19
- 238000001459 lithography Methods 0.000 description 15
- 239000000203 mixture Substances 0.000 description 9
- 229910000449 hafnium oxide Inorganic materials 0.000 description 8
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 8
- 239000002194 amorphous carbon material Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000011161 development Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000000717 retained effect Effects 0.000 description 6
- 238000009966 trimming Methods 0.000 description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- WGXGKXTZIQFQFO-CMDGGOBGSA-N ethenyl (e)-3-phenylprop-2-enoate Chemical compound C=COC(=O)\C=C\C1=CC=CC=C1 WGXGKXTZIQFQFO-CMDGGOBGSA-N 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/947—Subphotolithographic processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/95—Multilayer mask including nonradiation sensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Weting (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93261807P | 2007-06-01 | 2007-06-01 | |
| US11/875,205 US7846849B2 (en) | 2007-06-01 | 2007-10-19 | Frequency tripling using spacer mask having interposed regions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200910419A TW200910419A (en) | 2009-03-01 |
| TWI381424B true TWI381424B (zh) | 2013-01-01 |
Family
ID=39739769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097119558A TWI381424B (zh) | 2007-06-01 | 2008-05-27 | 利用具有插入區之間隔遮罩的三倍頻方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7846849B2 (enExample) |
| EP (1) | EP1998362A2 (enExample) |
| JP (1) | JP5236996B2 (enExample) |
| KR (1) | KR100991339B1 (enExample) |
| CN (1) | CN101315515B (enExample) |
| SG (1) | SG148135A1 (enExample) |
| TW (1) | TWI381424B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7807578B2 (en) * | 2007-06-01 | 2010-10-05 | Applied Materials, Inc. | Frequency doubling using spacer mask |
| JP5484325B2 (ja) * | 2008-06-13 | 2014-05-07 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| US9953885B2 (en) * | 2009-10-27 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI shape near fin bottom of Si fin in bulk FinFET |
| US7923305B1 (en) * | 2010-01-12 | 2011-04-12 | Sandisk 3D Llc | Patterning method for high density pillar structures |
| US8828885B2 (en) * | 2013-01-04 | 2014-09-09 | Taiwan Semiconductor Manufacturing Company Limited | Photo resist trimmed line end space |
| US8865600B2 (en) * | 2013-01-04 | 2014-10-21 | Taiwan Semiconductor Manufacturing Company Limited | Patterned line end space |
| CN104425223B (zh) * | 2013-08-28 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | 图形化方法 |
| US9070630B2 (en) * | 2013-11-26 | 2015-06-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming patterns |
| US9524878B2 (en) * | 2014-10-02 | 2016-12-20 | Macronix International Co., Ltd. | Line layout and method of spacer self-aligned quadruple patterning for the same |
| CN105590894B (zh) * | 2014-11-12 | 2018-12-25 | 旺宏电子股份有限公司 | 线路布局以及线路布局的间隙壁自对准四重图案化的方法 |
| CN107785247A (zh) * | 2016-08-24 | 2018-03-09 | 中芯国际集成电路制造(上海)有限公司 | 金属栅极及半导体器件的制造方法 |
| US10566194B2 (en) | 2018-05-07 | 2020-02-18 | Lam Research Corporation | Selective deposition of etch-stop layer for enhanced patterning |
| US10811256B2 (en) * | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
| CN113795908B (zh) * | 2019-04-08 | 2025-06-20 | 应用材料公司 | 用于修改光刻胶轮廓和调整临界尺寸的方法 |
| CN112309838B (zh) * | 2019-07-31 | 2023-07-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US12068168B2 (en) * | 2022-02-17 | 2024-08-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Processes for reducing line-end spacing |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW574728B (en) * | 2002-06-12 | 2004-02-01 | Canon Kk | Method for forming a mask pattern and method for fabricating a semiconductor device |
| TWI272656B (en) * | 2002-12-24 | 2007-02-01 | Rohm Co Ltd | Mask, method of making same and method of making semiconductor device using same |
| US7259089B2 (en) * | 2004-01-19 | 2007-08-21 | Sony Corporation | Semiconductor device manufacturing method that includes forming a wiring pattern with a mask layer that has a tapered shape |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5328810A (en) * | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
| KR100354440B1 (ko) * | 2000-12-04 | 2002-09-28 | 삼성전자 주식회사 | 반도체 장치의 패턴 형성 방법 |
| US6924191B2 (en) * | 2002-06-20 | 2005-08-02 | Applied Materials, Inc. | Method for fabricating a gate structure of a field effect transistor |
| DE10345455A1 (de) * | 2003-09-30 | 2005-05-04 | Infineon Technologies Ag | Verfahren zum Erzeugen einer Hartmaske und Hartmasken-Anordnung |
| US7064078B2 (en) * | 2004-01-30 | 2006-06-20 | Applied Materials | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
| US7115525B2 (en) * | 2004-09-02 | 2006-10-03 | Micron Technology, Inc. | Method for integrated circuit fabrication using pitch multiplication |
| CN1832109A (zh) * | 2005-03-08 | 2006-09-13 | 联华电子股份有限公司 | 掩模的制造方法与图案化制造方法 |
| US7253118B2 (en) * | 2005-03-15 | 2007-08-07 | Micron Technology, Inc. | Pitch reduced patterns relative to photolithography features |
| KR100674970B1 (ko) * | 2005-04-21 | 2007-01-26 | 삼성전자주식회사 | 이중 스페이서들을 이용한 미세 피치의 패턴 형성 방법 |
| US7560390B2 (en) * | 2005-06-02 | 2009-07-14 | Micron Technology, Inc. | Multiple spacer steps for pitch multiplication |
| KR100752674B1 (ko) * | 2006-10-17 | 2007-08-29 | 삼성전자주식회사 | 미세 피치의 하드마스크 패턴 형성 방법 및 이를 이용한반도체 소자의 미세 패턴 형성 방법 |
-
2007
- 2007-10-19 US US11/875,205 patent/US7846849B2/en not_active Expired - Fee Related
-
2008
- 2008-05-27 JP JP2008138376A patent/JP5236996B2/ja not_active Expired - Fee Related
- 2008-05-27 TW TW097119558A patent/TWI381424B/zh not_active IP Right Cessation
- 2008-05-28 SG SG200804042-0A patent/SG148135A1/en unknown
- 2008-05-29 EP EP08157220A patent/EP1998362A2/en not_active Withdrawn
- 2008-05-29 KR KR1020080050414A patent/KR100991339B1/ko not_active Expired - Fee Related
- 2008-05-30 CN CN2008100983623A patent/CN101315515B/zh not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW574728B (en) * | 2002-06-12 | 2004-02-01 | Canon Kk | Method for forming a mask pattern and method for fabricating a semiconductor device |
| TWI272656B (en) * | 2002-12-24 | 2007-02-01 | Rohm Co Ltd | Mask, method of making same and method of making semiconductor device using same |
| US7259089B2 (en) * | 2004-01-19 | 2007-08-21 | Sony Corporation | Semiconductor device manufacturing method that includes forming a wiring pattern with a mask layer that has a tapered shape |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1998362A2 (en) | 2008-12-03 |
| JP5236996B2 (ja) | 2013-07-17 |
| SG148135A1 (en) | 2008-12-31 |
| US20080299465A1 (en) | 2008-12-04 |
| TW200910419A (en) | 2009-03-01 |
| KR100991339B1 (ko) | 2010-11-01 |
| US7846849B2 (en) | 2010-12-07 |
| CN101315515A (zh) | 2008-12-03 |
| CN101315515B (zh) | 2013-03-27 |
| KR20080106070A (ko) | 2008-12-04 |
| JP2009027146A (ja) | 2009-02-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |